An integrated electronic device having a semiconductor body including: a first electrode region having a first type of conductivity; and a second electrode region having a second type of conductivity, which forms a junction with the first electrode region. The integrated electronic device further includes a nanostructured semiconductor region, which extends in one of the first and second electrode regions.
Legal claims defining the scope of protection, as filed with the USPTO.
1. An integrated electronic device comprising: a semiconductor body; a first electrode region, having a first type of conductivity, in said semiconductor body; a second electrode region having a second type of conductivity in said semiconductor body, the second electrode region forming a junction with the first electrode region; and a nanostructured semiconductor region which extends in one of said first and second electrode regions, wherein: said semiconductor body has a front surface; said first electrode region forms a body region of a MOSFET; and said second electrode region includes a first conductive region of the MOSFET, the first conductive region being a drain region or a source region.
2. The device according to claim 1 , wherein the first and second electrode regions have, respectively, a first minimum doping level and a second minimum doping level, said second minimum doping level being lower than the first minimum doping level; and wherein said nanostructured semiconductor region extends in the second electrode region.
3. The device according to claim 2 , wherein said second electrode region includes at least: a first subregion arranged at a distance from said first electrode region; and a second subregion, which is arranged between the first subregion and the first electrode region and contacts the first subregion and the first electrode region, said second subregion having a doping level equal to said second minimum doping level; and wherein said nanostructured semiconductor region extends at least in part within said second subregion.
4. The device according to claim 3 , wherein said nanostructured semiconductor region extends entirely within said second subregion.
5. The device according to claim 1 , comprising an insulation region of dielectric material, which extends within said second electrode region and is laterally spaced apart from said first electrode region; and wherein said nanostructured semiconductor region extends underneath and in direct contact with said insulation region.
6. The device according to claim 5 , wherein: said insulation region is arranged between said body region and said first conductive region.
7. The device according to claim 1 , wherein the MOSFET includes: a second conductive region adjacent to the body region, the second conductive region being a drain region or a source region; a conductive gate; and a gate dielectric positioned between the conductive gate and the body region.
8. An output stage, comprising: an inductor; and a control stage configured to control current flow in the inductor, the control stage including an integrated electronic device that includes: a semiconductor body; a first electrode region, having a first type of conductivity, in said semiconductor body; a second electrode region having a second type of conductivity in said semiconductor body, the second electrode region forming a junction with the first electrode region; and a nanostructured semiconductor region which extends in one of said first and second electrode regions, wherein: the first and second electrode regions have, respectively, a first doping level and a second doping level, said second doping level being lower than the first doping level: said nanostructured semiconductor region extends in the second electrode region: said second electrode region includes at least a first subregion arranged at a distance from said first electrode region; and a second subregion, which is arranged between the first subregion and the first electrode region and contacts the first subregion and the first electrode region; said second subregion has a doping level equal to said second doping level; and said nanostructured semiconductor region extends at least in part within said second sub ion.
9. The output stage according to claim 8 , further comprising an insulation region of dielectric material, which extends within said second electrode region and is laterally spaced apart from said first electrode region; and wherein said nanostructured semiconductor region extends underneath and in direct contact with said insulation region.
10. The output stage according to claim 8 , wherein: the semiconductor body has a front surface; the first electrode region forms a body region of a MOSFET; the second electrode region includes a first conductive region of the MOSFET, the first conductive region being a drain region or a source region; the MOSFET includes: a second conductive region adjacent to the body region, the second conductive region being a drain region or a source region; a conductive gate; and a gate dielectric positioned between the conductive gate and the body region.
11. The device according to claim 10 , further comprising an insulation region of dielectric material, which extends within said second electrode region and is laterally spaced apart from said first electrode region; and wherein: said nanostructured semiconductor region extends underneath and in direct contact with said insulation region; and said insulation region is arranged between said body region and said first conductive region.
12. An integrated electronic device comprising: a semiconductor body; a first electrode region, having a first type of conductivity and a first doping level, in said semiconductor body; a second electrode region having a second type of conductivity in said semiconductor body, the second electrode region forming a junction with the first electrode region; a nanostructured semiconductor region which extends in one of said first and second electrode regions, wherein the second electrode region includes at least: a first subregion arranged at a distance from said first electrode region; and a second subregion arranged between the first subregion and the first electrode region and contacts the first subregion and the first electrode region, said second subregion having a second doping level that is less than the first doping level and less than a third doping level of the first subregion; and wherein the nanostructured semiconductor region extends at least in part within said second subregion.
13. The device according to claim 11 , wherein the nanostructured semiconductor region extends entirely within said second subregion.
14. The device according to claim 11 , further comprising an insulation region of dielectric material, which extends within said second electrode region and is laterally spaced apart from said first electrode region; and wherein said nanostructured semiconductor region extends underneath and in direct contact with said insulation region.
15. The device according to claim 11 , wherein: the semiconductor body has a front surface; the first electrode region forms a body region of a MOSFET; the second electrode region includes a first conductive region of the MOSFET, the first conductive region being a drain region or a source region; the MOSFET includes: a second conductive region adjacent to the body region, the second conductive region being a drain region or a source region; a conductive gate; and a gate dielectric positioned between the conductive gate and the body region.
16. The device according to claim 15 , further comprising an insulation region of dielectric material, which extends within said second electrode region and is laterally spaced apart from said first electrode region; and wherein: said nanostructured semiconductor region extends underneath and in direct contact with said insulation region; and said insulation region is arranged between said body region and said first conductive region.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
March 13, 2017
March 19, 2019
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