Method for extending lifetime of resistive change memory and data storage system using the same

A method for extending the lifetime of a resistive change memory includes generating data and hash candidates by shuffling bit positions of write data with the hash candidates in response to a write request for the resistive change memory, calculating Hamming distances of the generated data and hash candidates from stored data and a stored hash, matching stuck data at a predetermined bit in the resistive change memory with the generated data and hash candidates when the stuck data is at the predetermined bit, and excluding mismatched data and hash candidates that are mismatched with the stuck data among the generated data and hash candidates, finding a data and hash candidate with the shortest Hamming distance among the matched data and hash candidates, and choosing the found data and hash candidate as an encoded data and hash, and storing the encoded data and hash in the resistive change memory.