There is provided a method for fabricating a substrate structure capable of enhancing process reproducibility and process stability by trimming a bevel region of a substrate using a wafer level process. The method includes providing a first substrate including first and second surfaces opposite each other and a first device region formed at the first surface, providing a second substrate including third and fourth surfaces opposite each other and a second device region at the third surface, bonding the first substrate and the second substrate to electrically connect the first device region and the second device region, and forming a trimmed substrate. The forming the trimmed substrate includes etching an edge region of the second substrate bonded to the first substrate.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for fabricating a substrate structure comprising: providing a first substrate including first and second surfaces opposite each other, and a first device region at the first surface; providing a second substrate including third and fourth surfaces opposite each other, and a second device region at the third surface; bonding the first substrate and the second substrate to electrically connect the first device region and the second device region; and forming a trimmed substrate, the forming the trimmed substrate including etching an edge region of the second substrate bonded to the first substrate, wherein a sidewall of the second substrate includes an inclined surface that is acute with respect to the first surface of the first substrate, and the sidewall of the second substrate includes a continuous profile with a sidewall of the first device region.
2. The method of claim 1 , wherein the forming a trimmed substrate includes: forming a mask pattern on the fourth surface of the second substrate for exposing the edge region of the second substrate; and removing the edge region of the second substrate using the mask pattern as an etching mask.
3. The method of claim 1 , wherein the forming a trimmed substrate includes removing the edge region of the second substrate while the fourth surface of the second substrate is entirely exposed.
4. The method of claim 1 , wherein the forming a trimmed substrate includes removing the edge region of the second substrate using a dry etching process.
5. The method of claim 1 , further comprising: forming a through electrode in the second substrate after the bonding the first substrate and the second substrate to electrically connect the first device region and the second device region, wherein the through electrode is electrically connected to the second device region.
6. The method of claim 1 , wherein the bonding the first substrate and the second substrate includes directly bonding the first substrate and the second substrate.
7. The method of claim 6 , wherein the directly bonding the first substrate to the second substrate includes: arranging the first surface of the first substrate to face the third surface of the second substrate; and bonding the first device region and the second device region.
8. The method of claim 6 , wherein the directly bonding the first substrate and the second substrate includes: disposing the first substrate and the second substrate such that the second surface of the first substrate and the third surface of the second substrate face each other; and bonding the second device region to the second surface of the first substrate.
9. The method of claim 1 , wherein the bonding the first substrate and the second substrate includes forming a conductive connector on the third surface of the second substrate and electrically connecting the first device region and the second device region to each other using the conductive connector.
10. The method of claim 9 , wherein the bonding the first substrate and the second substrate includes forming an encapsulating insulating film surrounding a periphery of the conductive connector between the first surface of the first substrate and the third surface of the second substrate.
11. The method of claim 1 , further comprising before forming the trimmed substrate, removing a portion of the second substrate bonded to the first substrate to reduce a thickness of the second substrate.
12. The method of claim 11 , wherein the second substrate includes a through electrode, and the through electrode is exposed during the removing the portion of the second substrate.
13. A method for fabricating a substrate structure comprising: providing a first substrate including first and second surfaces opposite each other, and a first device region at the first surface; bonding the first surface of the first substrate to a carrier; removing a portion of the first substrate bonded to the carrier to reduce a thickness of the first substrate; and removing an edge region of the first substrate using a dry etching process after the second surface of the first substrate having the reduced thickness is entirely exposed.
14. The method of claim 13 , further comprising: forming a through electrode in the first substrate before the removing the edge region of the first substrate.
15. The method of claim 13 , wherein the carrier is a second substrate including a second device region, and the bonding the first surface of the first substrate to the carrier includes disposing the first substrate and the second substrate such that the first device region and the second device region face each other, and electrically connecting the first device region and the second device region.
16. A method for fabricating a substrate structure comprising: forming a preliminary substrate structure, the preliminary substrate structure including a first device region of a first substrate bonded to a second device region of a second substrate such that a first surface of the second device region is on top of a first surface of the first device region, the first substrate including the first device region on one surface of a first base substrate; and forming a trimmed substrate, the forming a trimmed substrate including etching an edge region of the preliminary substrate structure such that a sidewall of the first device region and a sidewall of the second device region define an inclined surface with respect to the one surface of the first base substrate, the edge region of the preliminary substrate structure including an edge region of the first device region and an edge region of the second device region.
17. The method of claim 16 , wherein the forming a preliminary substrate structure includes directly bonding the first substrate to the second substrate.
18. The method of claim 16 , wherein the forming a preliminary substrate structure includes electrically connecting the first device region to the second device region.
19. The method of claim 16 , wherein the etching is performed while a protection ring covers a center region of the preliminary substrate structure and exposes the edge region.
20. The method of claim 16 , wherein the second substrate includes a second base substrate, the second device region is on one surface of the second base substrate, the forming a preliminary substrate structure includes reducing a thickness of the second substrate, and a width of the second base substrate is greater than a width of the second device region.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 15, 2017
June 18, 2019
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.