Heat-curable resin composition for semiconductor encapsulation

2. The heat-curable resin composition for semiconductor encapsulation according to claim 1 , wherein cyanate ester compound content in the component (A) except for the cyanate ester compound (A-1) represented by the formula (1) is an amount of smaller than 10% by mass with respect to the whole amount of the component (A).

3. The heat-curable resin composition for semiconductor encapsulation according to claim 1 , wherein the resorcinol-type phenolic resin represented by the formula (6) is contained in the component (B) by an amount of 10 to 100% by mass with respect to the whole amount of the component (B).

4. The heat-curable resin composition for semiconductor encapsulation according to claim 1 , wherein cyanato groups in the cyanate ester compound as the component (A) are in an amount of 0.5 to 100 equivalents per 1 equivalent of hydroxyl groups in the phenol curing agent as the component (B).

5. The heat-curable resin composition for semiconductor encapsulation according to claim 1 , exhibiting a linear expansion coefficient of 3.0 to 5.0 ppm/° C. as a result of measuring a 5×5×15 mm specimen at a rate of temperature increase of 5° C./min and under a load of 19.6 mN, in accordance with a method described in JIS K 7197:2012.

6. A method for producing a resin-encapsulated semiconductor device, comprising: a step of using a cured product of the heat-curable resin composition for semiconductor encapsulation as set forth in claim 1 to collectively encapsulate an entire silicon wafer or substrate with at least one semiconductor element mounted thereon, wherein the heat-curable resin composition for semiconductor encapsulation is applied either in a pressurized manner, or in a depressurized manner under a vacuum atmosphere, before being heated and cured to encapsulate the semiconductor element.