Device and method for a threshold sensor

1. A device, comprising: a first MEMS device formed on a substrate, wherein the first MEMS device is configured to sense at least one external influence, and wherein the first MEMS device is configured to change a physical state and store the changed physical state when the at least one external influence exceeds a threshold value, and the first MEMS device is configured to retain the physical state below the threshold value, wherein the change in physical state of the first MEMS device is done passively, substantially due to an energy from the external influence, wherein the first MEMS device includes a device layer, the device layer including a mass movably coupled to the device layer, the mass including a plunger, wherein the mass including the plunger configured to move normal relative to the device layer; at least one conductor formed on a different layer and disposed relative to the plunger, wherein the plunger impacts one of the at least one conductor when the external influence exceeds the threshold value; and a second MEMS device formed on the substrate along with the first MEMS device, the second MEMS device responsive to the at least one external influence, wherein the stored physical state of the first MEMS device is indicative of a status of the second MEMS device.

2. The device of claim 1 , wherein the external influence is at least one of shock, strain and temperature.

3. The device of claim 1 , wherein the second MEMS device is at least one of a gyroscope, accelerometer, magnetometer, barometer and microphone.

4. The device of claim 1 , wherein the change in state of the first MEMS device is irreversible.

5. The device of claim 1 , wherein the state is indicative of the direction of the external influence.

6. The device of claim 1 , wherein the stored physical state of the first MEMS device is detected visually, with a microscope.

7. The device of claim 1 , further including a readout circuit to read the state of the first MEMS deice and output the status of the second MEMS device.

8. The device of claim 1 , wherein the first MEMS device further comprises a normally closed mechanical switch that opens when the external influence exceeds the threshold value.

9. The device of claim 1 , wherein elements of the second MEMS device are formed on the device layer.

10. The device of claim 9 , wherein the plunger deforms the conductor when the external influence exceeds the threshold value and a capacitance between the conductor and another conductor determines the state, wherein capacitance is indicative that the external influence has exceeded the threshold value and another capacitance is indicative that the external influence has not exceed the threshold value.

11. The device of claim 1 , wherein the first conductor is broken when the external influence exceeds the threshold value and the resistance of the conductor determines the state of the second MEMS device, wherein a resistance indicates that the external influence exceeded the threshold and another resistance indicates that the external influence did not exceed the threshold.

12. The device of claim 11 , further including a signal processor, the signal processor anchored to the substrate with the first MEMS device and the second MEMS device and the signal processor configured to determine the resistance of the conductor and based on the determined resistance, output a signal indicative of the reliability of the second MEMS device.

13. A device, comprising: a first MEMS device formed on a substrate, wherein the first MEMS device is configured to sense at least one external influence, wherein the first MEMS device includes a device layer, the device layer including a mass movably coupled to the device layer, the mass including a plunger, wherein the mass including the plunger configured to move normal relative to the device layer; at least one conductor formed on a different layer and disposed relative to the plunger, wherein the plunger impacts one of the at least one conductor when the external influence exceeds the threshold value; and a MEMS object formed on the substrate along with the first MEMS device, wherein a status of the MEMS object selectively changes from a first status to a second status in response to the at least one external influence; wherein the first MEMS device is configured to change a physical state and store the changed physical state when the at least one external influence exceeds a threshold value, and the first MEMS device is configured to retain the physical state below the threshold value, wherein the change in physical state of the first MEMS device is done passively, substantially due to an energy from the external influence, and wherein the change in the physical state of the first MEMS device is indicative of the change in the status of the MEMS object from the first status to the second status.

14. The device of claim 13 , wherein the external influence is at least one of shock, strain and temperature.

15. The device of claim 13 , wherein the change in state of the first MEMS device is irreversible.

16. The device of claim 13 , wherein the change in status is indicative of the direction of the external influence.

17. The device of claim 13 , wherein the stored physical state of the first MEMS device is detected visually, with a microscope.

18. The device of claim 13 , further including a readout circuit to read the state of the first MEMS device and output the status of the MEMS object.

19. The device of claim 13 , wherein the first MEMS device further comprises a normally closed mechanical switch that opens when the external influence exceeds the threshold value.

20. The device of claim 13 , wherein elements of the MEMS object are formed on the device layer.

21. The device of claim 20 , wherein the plunger deforms the conductor when the external influence exceeds the threshold value and a capacitance between the conductor and another conductor determines the state, wherein capacitance is indicative that the external influence has exceeded the threshold value and another capacitance is indicative that the external influence has not exceed the threshold value.

22. The device of claim 13 , wherein the first conductor is broken when the external influence exceeds the threshold value and the resistance of the conductor determines the status of the MEMS object, wherein a resistance indicated that the external influence exceeded the threshold and another resistance indicated that the external influence did not exceed the threshold.

23. The device of claim 22 , further including a signal processor, the signal processor is anchored to the substrate with the first MEMS device and the MEMS object and the signal processor is configured to determine the resistance of the conductor and based on the determined resistance, output a signal indicative of the reliability of the MEMS object.