The present disclosure illustrates a method of extending a lifetime of a solid state disk (SSD). The SSD includes a flash memory which is a multi-level cell (MLC) flash memory. The method includes steps of: setting a number of logic blocks of the SSD to be one-half of a number of physical blocks of the flash memory; reading, by a control unit of the SSD, a write/erase times of each of the physical blocks of the flash memory; and converting the physical block, of which a number of the write/erase times exceeds an upper limit of the write/erase times, from a multi-level storage format to a single-level storage format. A number of the logic blocks is a constant value.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of extending lifetime of a solid state disk (SSD), and the SSD comprising a flash memory which is a three-level cell (TLC) flash memory, and the method comprising: setting a number of logic blocks of the SSD to be one-third of a number of physical blocks of the flash memory; reading, by a control unit of the SSD, a first write/erase times of each of the physical blocks of the flash memory; converting the physical block, of which a number of the first write/erase times exceeds an upper limit of the first write/erase times, from a three-level storage format to a multi-level storage format; reading, by the control unit, a second write/erase times of each of the physical blocks converted into the multi-level storage format; and converting the physical block, which is in the multi-level storage format and a number of the second write/erase times exceeds an upper limit of the second write/erase times, into a single-level storage format; wherein a number of the logic blocks is a constant value.
2. The method according to claim 1 , wherein when all physical blocks are converted into the single-level storage format and a bad block ratio of the physical blocks converted into the single-level storage format is higher than a preset ratio, the SSD enters a read-only state.
3. The method according to claim 1 , wherein a capacity of each of the physical blocks in the multi-level storage format is two-thirds of capacity of each of the physical blocks in the three-level storage format, and when all physical blocks are converted into the multi-level storage format, the capacity of the flash memory is reduced to two-thirds.
4. The method according to claim 3 , wherein a capacity of each of the physical blocks in the single-level storage format is one-half of capacity of each of the physical blocks in the multi-level storage format, and when all physical blocks are converted into the single-level storage format, the capacity of the flash memory is equal to a logic access capacity of the SSD.
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December 29, 2017
September 24, 2019
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