Content addressable memory using threshold-adjustable vertical transistors and methods of forming the same

A content addressable memory element is provided that includes a vertical transistor including a first electrode coupled to a match line, a second electrode coupled to a ground line, a first gate electrode coupled to a search line, and a second gate electrode coupled to a complementary search line. The first gate electrode and the second gate electrode are disposed on opposite sides of the vertical transistor, and the vertical transistor includes a charge storage memory element.