A switching element may include a semiconductor substrate, a trench, a gate insulating film, and a gate electrode. A drift region may be in contact with the gate insulating film below the body region. A bottom region may be in contact with the gate insulating film at a bottom surface of the trench. A connection region may be in contact with the gate insulating film at a side surface of the trench and connect the body region and the bottom region. The side surface of the trench may include a first side surface and a second side surface positioned below the first side surface. An inclination angle of the second side surface may be larger than an inclination angle of the first side surface. An interface between the body region and the drift region may be in contact with the gate insulating film at the first side surface.
Legal claims defining the scope of protection, as filed with the USPTO.
Claim text for this patent isn't available yet.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 10, 2018
November 5, 2019
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.