Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.
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1. A device comprising: a substrate having a first side and a second side that is opposite the first side; an interconnect structure disposed over the first side of the substrate; a first pixel disposed in the substrate, the first pixel extending from the first side of the substrate; a second pixel and a third pixel disposed in the substrate; a radiation-blocking structure disposed over the second side of the substrate; a passivation layer disposed on the radiation-blocking structure; a color filter disposed on the passivation layer; and a shallow trench isolation structure disposed within the substrate, and wherein the passivation layer extends to the shallow trench isolation structure disposed within the substrate, wherein the first pixel is spaced apart from the second pixel and the third pixel, wherein the second pixel is spaced apart from the third pixel, wherein the radiation-blocking structure includes a first portion, a second portion, a third portion and a fourth portion, wherein the first pixel is disposed within the substrate between the first and second portions of the radiation-blocking structure, wherein the second pixel is disposed within the substrate between the second and third portions of the radiation-blocking structure, and wherein the third pixel is disposed within the substrate between the third and fourth portions of the radiation-blocking structure.
This invention relates to an imaging device with an improved pixel structure and radiation-blocking features. The device includes a substrate with pixels formed within it, where a first pixel extends from one side of the substrate while a second and third pixel are also embedded within the substrate. The pixels are spaced apart from each other to prevent interference. An interconnect structure is disposed over one side of the substrate to facilitate electrical connections. On the opposite side of the substrate, a radiation-blocking structure is placed to prevent unwanted light from reaching the pixels. This structure has multiple portions that isolate each pixel, ensuring that only the intended pixel receives light. A passivation layer is applied over the radiation-blocking structure to protect it, and this layer extends to a shallow trench isolation structure within the substrate to enhance electrical insulation. A color filter is placed on top of the passivation layer to selectively filter light for color imaging. The design ensures precise light control and pixel isolation, improving image quality in imaging applications.
2. The device of claim 1 , wherein the radiation-blocking structure is formed of a metal material.
Technical Summary: This invention relates to a device incorporating a radiation-blocking structure designed to mitigate electromagnetic interference (EMI) or other unwanted radiation effects. The device includes a radiation-blocking structure that is specifically constructed from a metal material to enhance its shielding effectiveness. Metal materials are chosen for their high electrical conductivity and reflective properties, which effectively block or absorb electromagnetic waves, preventing them from interfering with sensitive electronic components or systems. The use of metal ensures optimal performance in shielding applications, particularly in environments where electronic devices must operate without disruption from external or internal radiation sources. This design is particularly useful in telecommunications, computing, medical equipment, and other fields where electromagnetic compatibility is critical. The metal radiation-blocking structure may be integrated into various electronic enclosures, housings, or internal components to provide localized or comprehensive shielding as needed. The invention addresses the need for reliable and efficient radiation shielding in modern electronic systems, where increasing miniaturization and higher operating frequencies demand advanced shielding solutions.
3. The device of claim 1 , wherein the color filter includes a first segment disposed over the first pixel, and second segment disposed over the second pixel and a third segment disposed over the third pixel, wherein the first segment of the color filter allows a first color of light to pass through the first segment while filtering out a second color of light and a third color of light, wherein the second segment of the color filter allows the second color of light to pass through the second segment while filtering out the first color of light and the third color of light, wherein the third segment of the color filter allows the third color of light to pass through the third segment while filtering out the first color of light and the second color of light, and wherein the first, second and third colors of light are different from each other.
The invention relates to an imaging device with a color filter array designed to enhance light separation and color accuracy. The device includes a sensor with at least three adjacent pixels, each covered by a distinct segment of a color filter. The first segment allows only a first color of light to pass while blocking a second and third color. The second segment permits only the second color to pass while blocking the first and third colors. The third segment allows only the third color to pass while blocking the first and second colors. The three colors are distinct, ensuring that each pixel captures a unique wavelength range. This segmented filter design improves color fidelity by minimizing crosstalk between adjacent pixels, where light of one color might otherwise interfere with the detection of another. The invention is particularly useful in high-resolution imaging applications where precise color reproduction is critical, such as digital cameras, medical imaging, and display technologies. The filter segments are positioned directly over their respective pixels, ensuring that each pixel receives only its designated color spectrum, thereby enhancing image clarity and accuracy.
4. The device of claim 1 , further comprising: a high-k dielectric material layer disposed directly on the second side of the substrate; and a dielectric material layer disposed directly on the high-k dielectric material layer, the dielectric material layer being formed of a different material than the high-k dielectric material layer.
This invention relates to semiconductor devices, specifically to an improved structure for enhancing device performance and reliability. The problem addressed is the need for better dielectric properties in semiconductor devices, particularly in gate stacks or other critical regions where dielectric materials influence electrical performance, leakage current, and device longevity. The invention describes a semiconductor device with a substrate having a first side and a second side. A high-k dielectric material layer is disposed directly on the second side of the substrate, providing high dielectric constant properties to improve capacitance and reduce leakage. On top of this high-k dielectric layer, a second dielectric material layer is directly deposited, formed of a different material than the high-k layer. This second dielectric layer may serve to further enhance electrical properties, such as reducing interface defects or improving compatibility with other device components. The combination of these two distinct dielectric layers allows for optimized performance by leveraging the strengths of each material. The high-k layer provides high capacitance and low leakage, while the second dielectric layer may offer better interface quality, thermal stability, or compatibility with subsequent processing steps. This structure is particularly useful in advanced semiconductor devices where dielectric properties critically impact performance, such as in transistors, capacitors, or memory devices. The invention aims to improve device efficiency, reliability, and scalability in modern semiconductor manufacturing.
5. The device of claim 4 , wherein the passivation layer and the radiation-blocking structure both physically contact the dielectric material layer.
A device for semiconductor fabrication includes a passivation layer and a radiation-blocking structure, both of which physically contact a dielectric material layer. The dielectric material layer is positioned over a substrate and has a patterned opening that exposes a portion of the substrate. The passivation layer is formed over the dielectric material layer and extends into the patterned opening, covering the exposed substrate portion. The radiation-blocking structure is also formed over the dielectric material layer and is positioned adjacent to the passivation layer. The radiation-blocking structure is configured to block radiation during a lithography process, preventing exposure of underlying layers. The passivation layer protects the exposed substrate portion from contamination or damage during subsequent processing steps. The device ensures reliable semiconductor manufacturing by combining radiation shielding and surface protection in a single structure. This design is particularly useful in advanced semiconductor processes where precise control of radiation exposure and surface integrity is critical. The physical contact between the passivation layer, radiation-blocking structure, and dielectric material layer ensures structural stability and consistent performance.
6. The device of claim 1 , wherein the passivation layer physically contacts the shallow trench isolation structure.
A semiconductor device includes a substrate with a shallow trench isolation (STI) structure formed in the substrate to electrically isolate adjacent active regions. The STI structure is filled with an insulating material, such as silicon dioxide, and has a top surface substantially coplanar with the substrate surface. A passivation layer is deposited over the substrate and STI structure, where the passivation layer physically contacts the STI structure. The passivation layer may include a dielectric material, such as silicon nitride, and is configured to protect the underlying semiconductor structures from environmental contaminants, mechanical damage, and moisture. The passivation layer may also serve as a barrier to prevent diffusion of impurities into the active regions of the substrate. The device may further include conductive interconnects, such as metal lines or vias, formed in an interlayer dielectric (ILD) layer over the substrate. The passivation layer may extend over the ILD layer and interconnects to provide additional protection. The physical contact between the passivation layer and the STI structure ensures a continuous protective barrier, reducing the risk of delamination or gaps that could compromise device reliability. This configuration is particularly useful in advanced semiconductor manufacturing where minimizing defects and ensuring long-term device performance are critical.
7. The device of claim 1 , wherein the passivation layer is formed of a material selected from the group consisting of silicon oxide, silicon nitride and silicon oxynitride.
The invention relates to semiconductor devices, specifically to the passivation layer used in such devices to protect underlying structures. The problem addressed is the need for a reliable passivation material that provides effective protection against environmental factors, such as moisture and contaminants, while maintaining device performance and reliability. The device includes a semiconductor substrate with integrated circuitry and a passivation layer deposited over the substrate. The passivation layer is formed from a material selected from silicon oxide, silicon nitride, or silicon oxynitride. These materials are chosen for their excellent insulating properties, chemical stability, and ability to form a dense, conformal layer that prevents moisture ingress and corrosion. Silicon oxide provides good adhesion and thermal stability, silicon nitride offers high dielectric strength and barrier properties, and silicon oxynitride combines the benefits of both materials, offering tunable properties depending on the application. The passivation layer is deposited using techniques such as chemical vapor deposition (CVD) or plasma-enhanced CVD (PECVD), ensuring uniform coverage over the semiconductor surface. The selection of the passivation material depends on the specific requirements of the device, such as thermal budget, mechanical stress, and compatibility with subsequent processing steps. The invention improves device reliability by reducing leakage currents, preventing contamination, and enhancing long-term stability in harsh operating environments.
8. A device comprising: a substrate having a front side and a back side that is opposite the front side; an interconnect structure disposed over the front side of the substrate; a pixel disposed in the substrate; a light-reflective structure disposed over the back side of the substrate; a color filter disposed over the back side of the substrate; a passivation layer disposed over the back side of the substrate; a conductive pad disposed on a portion of the interconnect structure such that the conductive pad physically contacts the portion of the interconnect structure, wherein the passivation layer extends continuously from over the back side of the substrate to the conductive pad; and a reference pixel disposed in the substrate, wherein a portion of the light-reflective structure is disposed directly over the reference pixel thereby preventing light from reaching the reference pixel.
This invention relates to an imaging device with an improved backside structure for enhanced performance. The device includes a substrate with front and back sides, where an interconnect structure is formed on the front side. A pixel is integrated into the substrate, and a light-reflective structure is positioned over the back side to reflect incident light. A color filter is also placed on the back side to selectively filter light wavelengths. A passivation layer covers the back side, extending continuously to a conductive pad that connects to the interconnect structure, ensuring electrical contact while protecting the underlying layers. Additionally, a reference pixel is embedded in the substrate, with a portion of the light-reflective structure directly over it to block light, allowing the reference pixel to serve as a calibration or dark reference for the imaging device. This design optimizes light management, signal integrity, and device reliability by integrating reflective, filtering, and protective elements on the back side while maintaining electrical connectivity through the passivation layer.
9. The device of claim 8 , wherein the light-reflective structure includes a first portion spaced apart from a second portion, wherein the passivation layer extends continuously from the first portion to the second portion of the light-reflective structure, and wherein the color filter is disposed between the first portion and the second portion of the light-reflective structure.
This invention relates to an optical device with an improved light-reflective structure and color filter arrangement. The device addresses challenges in conventional optical systems where light reflection and color filtering are not optimally integrated, leading to inefficiencies in light management and color accuracy. The device includes a light-reflective structure with two distinct portions—first and second portions—that are physically separated. A passivation layer spans continuously between these portions, providing structural integrity and protection. A color filter is positioned between the first and second portions of the light-reflective structure, ensuring precise color filtering while maintaining efficient light reflection. This configuration enhances optical performance by minimizing light loss and improving color fidelity. The light-reflective structure may be part of a larger optical system, such as an image sensor or display, where controlled light reflection and accurate color representation are critical. The continuous passivation layer prevents contamination or degradation of the reflective surfaces, while the strategic placement of the color filter ensures that only the desired wavelengths of light pass through, improving overall image quality. This design is particularly useful in applications requiring high-precision light management, such as advanced imaging sensors or high-resolution displays.
10. The device of claim 8 , wherein the substrate is a semiconductor substrate.
A semiconductor device includes a substrate, a first conductive layer, a second conductive layer, and a dielectric layer. The substrate provides structural support and electrical functionality. The first conductive layer is formed on the substrate and includes a first conductive material, such as a metal or doped semiconductor. The second conductive layer is formed on the first conductive layer and includes a second conductive material, different from the first, to enhance electrical performance. A dielectric layer is positioned between the first and second conductive layers to electrically insulate them while allowing controlled interaction. The substrate is a semiconductor material, such as silicon, gallium arsenide, or another semiconductor compound, enabling integration with active or passive electronic components. The device may function as a transistor, capacitor, or interconnect structure in integrated circuits, addressing challenges in miniaturization, signal integrity, and thermal management. The semiconductor substrate allows for high-speed signal propagation, efficient heat dissipation, and compatibility with advanced fabrication processes. The layered conductive and dielectric materials optimize electrical properties, such as capacitance, resistance, and signal delay, improving overall device performance in high-frequency and high-density applications.
11. The device of claim 8 , further comprising a shallow trench isolation structure disposed within the substrate, and wherein the shallow trench isolation structure interfaces with the conductive pad.
A semiconductor device includes a substrate with a conductive pad formed on its surface, where the conductive pad is electrically connected to an underlying conductive region within the substrate. The conductive pad is configured to facilitate electrical contact to the conductive region, which may be a doped region or another conductive feature. The device further includes a shallow trench isolation (STI) structure formed within the substrate, adjacent to the conductive pad. The STI structure electrically isolates the conductive pad and the conductive region from adjacent semiconductor features, preventing unintended electrical interference. The STI structure interfaces directly with the conductive pad, ensuring proper isolation while maintaining reliable electrical connectivity. This configuration is useful in integrated circuits where controlled electrical connections and isolation are required, such as in memory cells, transistors, or other semiconductor components. The STI structure may be formed using standard semiconductor fabrication techniques, including etching trenches into the substrate and filling them with insulating material. The conductive pad may be formed from a conductive material such as metal or doped polysilicon, and its dimensions and placement are optimized to ensure efficient electrical contact while minimizing area consumption. This design improves device performance by reducing parasitic capacitance and leakage currents, enhancing overall circuit reliability.
12. The device of claim 11 , wherein the passivation layer further extends to the shallow trench isolation structure.
A semiconductor device includes a substrate with a shallow trench isolation (STI) structure and a passivation layer. The passivation layer covers the substrate and extends over the STI structure, providing electrical insulation and protection against environmental damage. The passivation layer may be composed of materials such as silicon nitride, silicon oxide, or a combination thereof, deposited using chemical vapor deposition (CVD) or other suitable methods. The STI structure defines active regions in the substrate by isolating adjacent semiconductor devices, preventing electrical interference. The passivation layer's extension over the STI structure ensures uniform coverage, reducing stress and improving reliability. This configuration enhances device performance by minimizing leakage currents and improving dielectric integrity. The passivation layer may also include additional layers, such as a barrier layer to prevent diffusion of contaminants. The device may further include conductive interconnects, transistors, or other semiconductor components integrated within the substrate. The passivation layer's coverage over the STI structure ensures long-term stability and protection during manufacturing and operation.
13. The device of claim 8 , wherein the light-reflective structure has a top surface facing away from the substrate, and wherein the passivation layer is disposed directly on the top surface of the light-reflective structure.
This invention relates to semiconductor devices with light-reflective structures, particularly addressing challenges in optical performance and reliability. The device includes a substrate, a light-reflective structure positioned on the substrate, and a passivation layer directly covering the top surface of the light-reflective structure. The light-reflective structure enhances optical efficiency by reflecting light within the device, while the passivation layer protects the reflective surface from environmental degradation, such as oxidation or contamination. The direct contact between the passivation layer and the reflective structure ensures minimal optical loss and maintains long-term stability. This configuration is useful in applications like light-emitting diodes (LEDs), photodetectors, or other optoelectronic devices where light reflection and durability are critical. The passivation layer may be made of materials like silicon nitride or silicon oxide, chosen for their compatibility with the reflective structure and the substrate. The invention improves device performance by optimizing light management while ensuring structural integrity.
14. A device comprising: a substrate having a first side and a second side that is opposite the first side; an interconnect structure disposed over the first side of the substrate; a first pixel disposed in the substrate and extending from the first side of the substrate toward the second side, wherein a portion of the substrate is disposed between the first pixel and the second side of the substrate; a radiation-blocking structure disposed over the second side of the substrate, wherein the radiation-blocking structure includes a first portion and a second portion and wherein the pixel is disposed within the substrate between the first and second portions of the radiation-blocking structure; a shallow trench isolation structure disposed within the substrate; and a passivation layer disposed over the second side of the substrate and extending from the radiation-blocking structure to the shallow trench isolation structure, wherein the passivation layer physically contacts the shallow trench isolation structure.
This invention relates to semiconductor devices, specifically an imaging sensor with improved radiation shielding and structural integrity. The device addresses the problem of stray radiation interference and structural vulnerabilities in pixel-based sensors, which can degrade image quality and reliability. The device includes a substrate with opposing first and second sides. An interconnect structure is formed on the first side, while a pixel is embedded within the substrate, extending from the first side toward the second side but not reaching it. A radiation-blocking structure is positioned on the second side, featuring two portions that flank the pixel, creating a shielded region around it. This structure prevents unwanted radiation from reaching the pixel, enhancing signal integrity. A shallow trench isolation structure is integrated into the substrate to electrically isolate the pixel and other components. A passivation layer is applied over the second side, spanning from the radiation-blocking structure to the shallow trench isolation structure, ensuring physical contact with the isolation structure. This layer provides additional protection against environmental and mechanical stresses, improving device durability. The combination of the radiation-blocking structure, pixel placement, and passivation layer ensures high-performance imaging with minimized interference and enhanced structural stability.
15. The device of claim 14 , further comprising a second pixel disposed in the substrate, and wherein the radiation-blocking structure further includes a third portion, and wherein the second pixel is disposed within the substrate between the second and third portions of the radiation-blocking structure.
This invention relates to semiconductor devices, specifically pixel structures in substrates with radiation-blocking features. The problem addressed is unwanted radiation interference between adjacent pixels, which can degrade image quality in imaging sensors. The device includes a substrate with at least one pixel and a radiation-blocking structure that isolates the pixel from adjacent regions. The radiation-blocking structure has multiple portions that extend into or above the substrate to prevent cross-talk. A second pixel is also disposed in the substrate, positioned between two additional portions of the radiation-blocking structure. These portions create a barrier that blocks radiation from reaching the second pixel from neighboring areas, ensuring each pixel operates independently without interference. The design improves signal integrity and image fidelity in semiconductor imaging devices by physically separating pixels with radiation-absorbing or reflective barriers. The structure can be implemented in various semiconductor materials and pixel configurations to enhance performance in cameras, sensors, and other optoelectronic applications.
16. The device of claim 15 , further comprising a first color filter segment disposed directly over the first pixel and a second color filter segment disposed directly over the second pixel, wherein the first color filter segment allows a first color of light to pass through the first color filter segment while filtering out a second color of light, wherein the second color filter segment allows the second color of light to pass through the second color filter segment while filtering out the first color of light.
A display device includes an array of pixels, where each pixel contains a light-emitting element and a light-sensing element. The light-emitting element emits light in response to an electrical signal, while the light-sensing element detects ambient light and generates a corresponding electrical signal. The device further includes a first color filter segment positioned directly over a first pixel and a second color filter segment positioned directly over a second pixel. The first color filter segment allows a first color of light to pass through while blocking a second color of light, and the second color filter segment allows the second color of light to pass through while blocking the first color of light. This configuration enables the device to selectively filter and transmit specific colors of light to each pixel, enhancing color accuracy and display performance. The light-sensing elements in each pixel detect ambient light, allowing the device to adjust display brightness or perform other adaptive functions based on environmental conditions. The combination of light-emitting and light-sensing elements within each pixel, along with the color-filtering segments, improves the device's ability to display high-quality images while dynamically responding to ambient lighting.
17. The device of claim 14 , further comprising a conductive pad disposed on a portion of the interconnect structure, and wherein the passivation layer further extends to the conductive pad.
A device includes a semiconductor substrate with an interconnect structure formed on the substrate. The interconnect structure comprises conductive features such as metal lines and vias embedded in dielectric layers. A passivation layer is deposited over the interconnect structure to protect it from environmental damage and mechanical stress. The passivation layer is patterned to expose selected regions of the interconnect structure, allowing for electrical connections to external components. The device further includes a conductive pad disposed on a portion of the interconnect structure, and the passivation layer extends to cover the conductive pad. The conductive pad provides a contact point for electrical interfacing, while the passivation layer ensures structural integrity and reliability. This configuration enables robust electrical connections while maintaining protection for the underlying interconnect structure. The passivation layer may be composed of materials such as silicon nitride or silicon oxide, chosen for their insulating and protective properties. The conductive pad may be made of materials like aluminum, copper, or gold, optimized for conductivity and compatibility with the interconnect structure. This design is particularly useful in semiconductor devices where reliable electrical connections and protection against environmental factors are critical.
18. The device of claim 17 , wherein the passivation layer is formed of a material selected from the group consisting of silicon oxide, silicon nitride and silicon oxynitride.
This invention relates to semiconductor devices, specifically to the passivation layer used in such devices to protect underlying structures. The problem addressed is the need for a reliable, durable passivation layer that effectively prevents contamination, corrosion, and electrical leakage while maintaining device performance. The invention provides a semiconductor device with a passivation layer composed of materials such as silicon oxide, silicon nitride, or silicon oxynitride. These materials are chosen for their excellent insulating properties, chemical stability, and compatibility with semiconductor fabrication processes. The passivation layer is applied over the device's active regions, such as transistors or interconnects, to shield them from environmental factors and process-induced damage. Silicon oxide offers good adhesion and thermal stability, silicon nitride provides high dielectric strength and moisture resistance, and silicon oxynitride combines the benefits of both. The selection of material depends on the specific application requirements, such as thermal budget, stress tolerance, and integration with other layers. This passivation layer ensures long-term reliability and performance of the semiconductor device.
19. The device of claim 14 , further comprising a color filter disposed over the second side of the substrate, and wherein the radiation-blocking structure defines a recess, and wherein a portion of the passivation layer and a portion of the color filter are disposed within the recess.
This invention relates to semiconductor devices, specifically those incorporating radiation-blocking structures and color filters. The problem addressed is optimizing the integration of color filters with radiation-blocking elements in semiconductor devices, particularly to improve optical performance and manufacturing efficiency. The device includes a substrate with a first side and a second side. A radiation-blocking structure is formed on the first side, defining a recess. A passivation layer is deposited over the radiation-blocking structure, extending into the recess. A color filter is disposed over the second side of the substrate, with portions of both the passivation layer and the color filter extending into the recess defined by the radiation-blocking structure. This configuration ensures precise alignment and integration of the color filter with the underlying radiation-blocking structure, enhancing optical isolation and device performance. The radiation-blocking structure prevents unwanted light from interfering with the device's operation, while the color filter selectively transmits specific wavelengths. By placing portions of the passivation layer and color filter within the recess, the device achieves improved optical isolation and structural stability. This design is particularly useful in imaging sensors, display technologies, and other optoelectronic applications where precise light management is critical. The invention simplifies manufacturing by integrating these components in a single process flow, reducing alignment errors and improving yield.
20. The device of claim 14 , further comprising a reference pixel disposed in the substrate, wherein a third portion of the radiation-blocking structure is disposed directly over the reference pixel thereby preventing light from reaching the reference pixel.
A semiconductor device includes a substrate with an array of pixels and a radiation-blocking structure that selectively blocks light from reaching certain pixels. The device further includes a reference pixel integrated into the substrate, with a portion of the radiation-blocking structure positioned directly over this reference pixel to prevent light from reaching it. This configuration allows the reference pixel to serve as a baseline for calibration or noise reduction in imaging applications. The radiation-blocking structure is designed to block light from specific pixels while allowing light to reach others, enabling controlled light exposure across the pixel array. The reference pixel, shielded from light, provides a reference signal for comparison with active pixels, improving image quality by compensating for variations in pixel response or environmental noise. This design is particularly useful in imaging sensors where accurate light measurement and calibration are critical.
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December 14, 2018
November 26, 2019
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