Provided is a semiconductor device exemplified by an inverter circuit and a shift register circuit, which is characterized by a reduced number of transistors. The semiconductor device includes a first transistor, a second transistor, and a capacitor. One of a source and a drain of the first transistor is electrically connected to a first wiring, and the other thereof is electrically connected to a second wiring. One of a source and a drain of the second transistor is electrically connected to the first wiring, a gate of the second transistor is electrically connected to a gate of the first transistor, and the other of the source and the drain of the second transistor is electrically connected to one electrode of the capacitor, while the other electrode of the capacitor is electrically connected to a third wiring. The first and second transistors have the same conductivity type.
Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A semiconductor device comprising: a first transistor; a second transistor; a third transistor; a fourth transistor; a fifth transistor; and a capacitor, wherein each of the first transistor, the second transistor, the third transistor, the fourth transistor and the fifth transistor comprises a gate, a first terminal and a second terminal, wherein the gate of the first transistor is electrically connected to a first electrode of the capacitor, wherein the gate of the second transistor is electrically connected to the first electrode of the capacitor, wherein the first terminal of the second transistor is electrically connected to a second electrode of the capacitor, wherein the first terminal of the third transistor is electrically connected to the second electrode of the capacitor, wherein the second terminal of the first transistor is electrically connected to the gate of the fourth transistor, wherein the first terminal of the fourth transistor is electrically connected to the first terminal of the fifth transistor, and wherein a signal is input to the first electrode of the capacitor.
This invention relates to a semiconductor device designed for signal processing or memory applications, addressing challenges in circuit design such as signal amplification, storage, or logic operations. The device includes five transistors and a capacitor, interconnected to form a functional circuit. The capacitor has a first and second electrode, with the first electrode receiving an input signal. The gates of the first and second transistors are both connected to the first electrode of the capacitor, allowing them to respond to the input signal. The first terminal of the second transistor is connected to the second electrode of the capacitor, while the first terminal of the third transistor is also connected to the second electrode, enabling charge sharing or signal routing. The second terminal of the first transistor is connected to the gate of the fourth transistor, controlling its operation. The first terminals of the fourth and fifth transistors are interconnected, allowing them to work together in signal processing or amplification. The configuration suggests a circuit capable of storing, amplifying, or logically processing the input signal, with the capacitor providing temporary storage and the transistors enabling signal modulation or switching. The design may be used in memory cells, analog circuits, or digital logic applications where compact, efficient signal handling is required.
2. The semiconductor device according to claim 1 , wherein the signal oscillates between a high state and a low state.
A semiconductor device includes a signal that oscillates between a high state and a low state. The device is designed to address challenges in signal transmission and processing, particularly in integrated circuits where stable and reliable signal transitions are critical for performance. The oscillating signal ensures proper synchronization and timing control within the semiconductor, improving efficiency and reducing errors in data transmission. The high and low states of the signal are well-defined, allowing for precise logic operations and minimizing signal degradation. This feature is particularly useful in digital circuits where accurate signal transitions are essential for maintaining system integrity. The semiconductor device may include additional components such as transistors, capacitors, or resistors that work in conjunction with the oscillating signal to enhance functionality. The design ensures that the signal maintains its integrity across different operating conditions, including variations in temperature and voltage, which is crucial for reliable performance in various applications. The oscillating signal may be generated by an internal oscillator or an external source, depending on the specific requirements of the semiconductor device. This feature contributes to the overall robustness and efficiency of the semiconductor device, making it suitable for use in high-performance computing, communication systems, and other advanced electronic applications.
3. The semiconductor device according to claim 1 , wherein the first to fifth transistors have the same conductivity type.
A semiconductor device includes a first transistor, a second transistor, a third transistor, a fourth transistor, and a fifth transistor, all of which share the same conductivity type, such as n-type or p-type. The first transistor is connected to a first input terminal and a first output terminal, while the second transistor is connected to a second input terminal and the first output terminal. The third transistor is connected to the first input terminal and a second output terminal, and the fourth transistor is connected to the second input terminal and the second output terminal. The fifth transistor is connected between the first and second output terminals. The device operates to process input signals received at the first and second input terminals, generating corresponding output signals at the first and second output terminals. The transistors are configured to ensure proper signal routing and amplification, with the fifth transistor providing a balancing or switching function between the output terminals. This design allows for efficient signal processing while maintaining consistent performance across the transistors due to their uniform conductivity type. The device is particularly useful in integrated circuits requiring precise signal control and amplification.
4. The semiconductor device according to claim 1 , wherein at least one of the first to fifth transistors comprises an oxide semiconductor in a channel formation region.
A semiconductor device includes a plurality of transistors, where at least one of the transistors has an oxide semiconductor in its channel formation region. The device is designed to improve electrical characteristics, such as switching speed, power consumption, or reliability, by incorporating oxide semiconductors, which offer advantages like high mobility, low off-state current, and compatibility with flexible substrates. The oxide semiconductor may be used in thin-film transistor (TFT) configurations, enabling applications in displays, memory devices, or logic circuits. The device may also include additional transistors with different semiconductor materials, such as silicon, to optimize performance for specific functions. The oxide semiconductor transistor can be fabricated using deposition techniques like sputtering or chemical vapor deposition, followed by patterning and etching processes. This design addresses challenges in conventional semiconductor devices, such as high power consumption or limited flexibility, by leveraging the unique properties of oxide semiconductors. The device may be integrated into larger electronic systems, including integrated circuits or system-on-chip (SoC) architectures, to enhance overall performance and efficiency.
5. A display device comprising: a pixel portion over a substrate; and a scan line driver circuit over the substrate, the scan line driver circuit comprising: a first transistor; a second transistor; a third transistor; a fourth transistor; a fifth transistor; and a capacitor, wherein each of the first transistor, the second transistor, the third transistor, the fourth transistor and the fifth transistor comprises a gate, a first terminal and a second terminal, wherein the gate of the first transistor is electrically connected to a first electrode of the capacitor, wherein the gate of the second transistor is electrically connected to the first electrode of the capacitor, wherein the first terminal of the second transistor is electrically connected to a second electrode of the capacitor, wherein the first terminal of the third transistor is electrically connected to the second electrode of the capacitor, wherein the second terminal of the first transistor is electrically connected to the gate of the fourth transistor, wherein the first terminal of the fourth transistor is electrically connected to the first terminal of the fifth transistor, and wherein a signal is input to the first electrode of the capacitor.
This invention relates to a display device with an integrated scan line driver circuit designed to improve signal control and reduce power consumption. The display device includes a pixel portion and a scan line driver circuit, both formed over a substrate. The scan line driver circuit comprises five transistors and a capacitor, each transistor having a gate, a first terminal, and a second terminal. The capacitor has a first electrode and a second electrode. The gates of the first and second transistors are connected to the first electrode of the capacitor, which receives an input signal. The first terminal of the second transistor and the first terminal of the third transistor are both connected to the second electrode of the capacitor. The second terminal of the first transistor is connected to the gate of the fourth transistor, while the first terminals of the fourth and fifth transistors are interconnected. This configuration allows for efficient signal distribution and control within the scan line driver circuit, enabling precise timing and reduced power loss during display operation. The circuit design ensures stable signal transmission to the pixel portion, enhancing display performance while minimizing energy consumption.
6. The display device according to claim 5 , wherein the signal oscillates between a high state and a low state.
A display device includes a signal generator that produces an oscillating signal, which transitions between a high state and a low state. The signal is used to control a display element, such as a pixel or a segment, to modulate its optical properties. The oscillating signal may be applied to a transistor or other switching element connected to the display element, enabling precise control over the display's brightness, contrast, or color output. The signal generator may include circuitry to adjust the frequency, duty cycle, or amplitude of the oscillating signal, allowing dynamic adjustments to the display's performance. The display device may be part of a larger system, such as a liquid crystal display (LCD), organic light-emitting diode (OLED) display, or electronic paper display, where the oscillating signal helps drive the display elements to produce the desired visual output. The invention addresses the need for efficient and precise control of display elements to improve image quality and reduce power consumption in electronic displays.
7. The display device according to claim 5 , wherein the first to fifth transistors have the same conductivity type.
A display device includes a pixel circuit with first to fifth transistors, where all transistors share the same conductivity type, such as all being n-type or all being p-type. The pixel circuit is designed to drive a light-emitting element, such as an organic light-emitting diode (OLED), by controlling current flow through the element based on a data signal. The first transistor functions as a drive transistor, supplying current to the light-emitting element. The second transistor operates as a switching transistor, selectively coupling the data signal to the pixel circuit. The third transistor acts as a compensation transistor, compensating for variations in the drive transistor's characteristics. The fourth transistor serves as a threshold voltage compensation transistor, further stabilizing the drive current. The fifth transistor functions as an initialization transistor, resetting the pixel circuit before a new data signal is applied. By using transistors of the same conductivity type, the circuit simplifies manufacturing and improves uniformity in display performance. The design ensures stable current output regardless of variations in transistor threshold voltages or mobility, enhancing display brightness and longevity. This approach is particularly useful in active-matrix OLED displays, where consistent pixel performance is critical.
8. The display device according to claim 5 , wherein at least one of the first to fifth transistors comprises an oxide semiconductor in a channel formation region.
Technical Summary: This invention relates to display devices, specifically addressing the challenge of improving transistor performance in display panels. The device includes a pixel circuit with multiple transistors (first to fifth) that control pixel operations such as data writing, light emission, and voltage compensation. The innovation lies in incorporating an oxide semiconductor in the channel formation region of at least one of these transistors. Oxide semiconductors offer advantages like high mobility, low off-state current, and compatibility with flexible displays, enhancing overall device efficiency and reliability. The pixel circuit may also include a light-emitting element like an OLED, driven by a current source transistor to emit light based on input data. Additional transistors handle initialization, threshold voltage compensation, and data retention, ensuring stable display performance. By using oxide semiconductors in key transistors, the display device achieves improved switching characteristics and reduced power consumption, making it suitable for advanced display applications.
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May 21, 2019
December 3, 2019
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