A device includes a first semiconductor layer, a second semiconductor layer, and an intrinsic semiconductor layer. The second semiconductor layer is over the first semiconductor layer. The first semiconductor layer and the second semiconductor layer are of opposite conductivity types. The second semiconductor layer includes a first sidewall and a second sidewall substantially perpendicular to and larger than the first sidewall. The intrinsic semiconductor layer is in contact with the second sidewall of the second semiconductor layer and the first semiconductor layer.
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August 2, 2018
December 10, 2019
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