A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.
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1. A method of manufacturing an integrated circuit, the method comprising: providing a substrate member that includes a surface region and a backside region; treating the surface region to prepare the surface region for growth; forming an epitaxial material comprising single crystal piezo material overlying the surface region to a desired thickness; forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material; forming a topside landing pad metal within a vicinity of the trench region and overlying the exposed portion of the surface region; forming at least a pair of topside electrode members, including a first electrode member overlying a portion of the epitaxial material, and a second electrode member overlying the topside landing pad metal; processing the backside of the substrate member to form a backside trench region exposing a backside of the epitaxial material overlying the first electrode member, and exposing a backside of the landing pad metal; forming a backside resonator metal material overlying the backside of the epitaxial material to form a connection from the epitaxial material to the backside of the landing pad metal to couple to the second electrode member overlying the topside landing pad metal; and forming a resonator active area using at least a portion of the epitaxial material to electrically and spatially isolate the first electrode member from the second electrode member; and forming a dielectric passivation material comprising a silicon dioxide and a silicon nitride overlying a resulting structure overlying the substrate member, wherein the resulting structure at least includes the first and second electrode members.
This invention relates to the fabrication of integrated circuits incorporating piezoelectric materials for resonator applications. The method addresses challenges in integrating single-crystal piezoelectric materials with semiconductor substrates to create high-performance resonators with precise electrical and mechanical properties. The process begins with a substrate having a surface region and a backside region. The surface region is treated to prepare it for epitaxial growth. A single-crystal piezoelectric material is then deposited over the surface region to a controlled thickness. A trench is formed in the piezoelectric material to expose part of the underlying surface region. A metal landing pad is deposited within the trench, contacting the exposed surface region. Two electrode members are formed: one overlying the piezoelectric material and another overlying the landing pad. The backside of the substrate is processed to create a trench that exposes the backside of the piezoelectric material and the landing pad. A backside metal layer is deposited to connect the piezoelectric material to the landing pad, electrically coupling it to the topside electrode. The piezoelectric material is patterned to define a resonator active area, electrically isolating the two electrode members. Finally, a dielectric passivation layer, composed of silicon dioxide and silicon nitride, is deposited over the entire structure to protect the components. This method enables the integration of piezoelectric resonators with semiconductor substrates, improving performance and reliability in microelectronic devices.
2. The method of claim 1 wherein the backside trench region comprises a rib structure to provide mechanical support to the epitaxial material.
This invention relates to semiconductor device fabrication, specifically addressing structural integrity challenges in epitaxial material growth. The method involves forming a backside trench region in a substrate to support epitaxial layers during processing. The backside trench region includes a rib structure designed to mechanically reinforce the epitaxial material, preventing deformation or failure during subsequent fabrication steps. The rib structure provides localized support where stress concentrations are highest, ensuring structural stability while allowing for precise material deposition. This approach is particularly useful in advanced semiconductor manufacturing where thin or delicate epitaxial layers are susceptible to mechanical stress. The rib structure can be formed through selective etching or deposition processes, tailored to the specific requirements of the epitaxial material and device architecture. By integrating this support mechanism, the method enables reliable fabrication of high-performance semiconductor devices with improved yield and reliability. The invention is applicable to various semiconductor technologies, including power electronics, RF devices, and advanced logic circuits, where mechanical stability of epitaxial layers is critical.
3. The method of claim 1 wherein the processing of the backside of the substrate member is provided until a stop occurs on the backside of the epitaxial material.
This invention relates to semiconductor substrate processing, specifically to methods for thinning and processing the backside of a substrate member with an epitaxial layer. The problem addressed is controlling the depth of backside processing to avoid damaging the epitaxial material. The method involves processing the backside of a substrate until a stop occurs on the backside of the epitaxial material, ensuring precise removal of material without compromising the epitaxial layer. The processing may include mechanical grinding, chemical etching, or other material removal techniques. The stop mechanism can be a physical, chemical, or electrical detection method that identifies when the processing has reached the desired depth. This controlled processing prevents over-etching or over-grinding, which could damage the epitaxial layer or underlying structures. The method is particularly useful in semiconductor manufacturing where precise substrate thinning is required for device fabrication, such as in wafer-level packaging or backside processing for integrated circuits. The invention ensures that the epitaxial material remains intact while achieving the desired substrate thickness.
4. The method of claim 1 wherein the epitaxial material is a single crystal piezo material selected from at least one of AlN, AlGaN, InN, BN, or other group III nitrides; wherein the epitaxial material having a thickness of greater than 0.4 microns, the epitaxial material being characterized by a dislocation density of less than 10 12 defects/ cm 2 .
This invention relates to the growth of high-quality single-crystal piezoelectric materials for microelectromechanical systems (MEMS) and semiconductor applications. The problem addressed is the need for low-defect, thick epitaxial piezoelectric films to improve device performance and reliability. Traditional piezoelectric materials often suffer from high dislocation densities, which degrade their electrical and mechanical properties. The invention describes a method for depositing epitaxial piezoelectric films with a thickness exceeding 0.4 microns and a dislocation density below 10^12 defects/cm². The films are composed of single-crystal group III nitrides, including aluminum nitride (AlN), aluminum gallium nitride (AlGaN), indium nitride (InN), boron nitride (BN), or other similar compounds. These materials are grown using epitaxial techniques, ensuring high crystallinity and low defect density. The thick, low-defect films enhance piezoelectric efficiency, making them suitable for high-performance MEMS devices, sensors, and actuators. The method ensures uniform material properties across the film, improving device yield and longevity. The invention focuses on optimizing growth conditions to achieve the desired thickness and defect density, addressing limitations in conventional piezoelectric film fabrication.
5. The method of claim 1 wherein the epitaxial material includes a single crystal oxide selected from at least one of a high K dielectric, ZnO, and MgO.
This invention relates to semiconductor fabrication, specifically the growth of epitaxial materials for advanced electronic devices. The problem addressed is the need for high-quality single-crystal oxide layers with specific electrical and structural properties, such as high dielectric constant (high-K), for applications in transistors, capacitors, or other semiconductor components. The method involves depositing an epitaxial material onto a substrate, where the epitaxial material is a single-crystal oxide. The oxide is selected from a group that includes high-K dielectrics, zinc oxide (ZnO), and magnesium oxide (MgO). These materials are chosen for their desirable properties, such as high dielectric constant, thermal stability, or lattice matching with underlying semiconductor layers. The epitaxial growth ensures the material forms a continuous, defect-free crystalline structure aligned with the substrate, which is critical for device performance. The process may involve techniques like molecular beam epitaxy (MBE) or chemical vapor deposition (CVD) to achieve precise control over the oxide layer's composition, thickness, and crystallinity. The resulting structure can be integrated into semiconductor devices to enhance electrical insulation, charge storage, or interface quality. This approach is particularly useful in scaling down device dimensions while maintaining reliability and performance.
6. The method of claim 1 wherein the each of the first electrode material and the second electrode material is selected from one of tantalum or molybdenum.
This invention relates to electrode materials used in electronic devices, particularly for applications requiring high reliability and performance. The problem addressed is the selection of suitable electrode materials that provide stable electrical properties and long-term durability in devices such as capacitors, resistors, or semiconductor components. Conventional electrode materials may degrade over time or fail to meet performance requirements under harsh operating conditions. The invention discloses a method for fabricating an electronic device with improved electrode materials. The device includes a first electrode and a second electrode, each made from either tantalum or molybdenum. These materials are chosen for their excellent conductivity, corrosion resistance, and thermal stability. Tantalum is known for its high dielectric strength and resistance to oxidation, while molybdenum offers good mechanical strength and compatibility with various semiconductor processes. The use of these materials ensures reliable electrical contact and minimizes degradation over extended use. The electrodes may be part of a capacitor, resistor, or other passive or active electronic component, where stable performance is critical. The method ensures precise deposition and patterning of the electrode materials to achieve the desired electrical and mechanical properties. This approach enhances device reliability and extends operational lifespan in demanding environments.
7. The method of claim 1 wherein the substrate member is selected from silicon, gallium arsenide, gallium nitride, aluminum nitride, or aluminum oxide.
This invention relates to semiconductor fabrication, specifically the selection of substrate materials for electronic or optoelectronic devices. The problem addressed is the need for compatible substrate materials that support high-performance device operation while ensuring structural integrity and electrical/optical properties. The method involves fabricating a device on a substrate member, where the substrate is chosen from a group of materials including silicon, gallium arsenide, gallium nitride, aluminum nitride, or aluminum oxide. These materials are selected for their semiconductor properties, thermal stability, and compatibility with various device architectures. Silicon is widely used for its cost-effectiveness and well-established processing techniques. Gallium arsenide and gallium nitride are preferred for high-frequency and high-power applications due to their superior electron mobility and breakdown voltage. Aluminum nitride and aluminum oxide are chosen for their thermal conductivity and electrical insulation properties, making them suitable for high-temperature or high-voltage devices. The selection of substrate material is critical to optimizing device performance, reliability, and manufacturing efficiency. This method ensures that the substrate enhances the device's functionality while maintaining mechanical and thermal stability during operation.
8. A method of manufacturing an integrated circuit, the method comprising: providing a substrate member that includes a surface region and a backside region; treating the surface region to prepare the surface region for growth; forming an epitaxial material comprising single crystal piezo material overlying the surface region to a desired thickness; forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material; forming a topside landing pad metal within a vicinity of the trench region and overlying the exposed portion of the surface region; forming at least a pair of topside electrode members, including a first electrode member overlying a portion of the epitaxial material, and a second electrode member overlying the topside landing pad metal; processing the backside of the substrate member to form a backside trench region exposing a backside of the epitaxial material overlying the first electrode member, and exposing a backside of the landing pad metal; forming a backside resonator metal material overlying the backside of the epitaxial material to form a connection from the epitaxial material to the backside of the landing pad metal to couple to the second electrode member overlying the topside landing pad metal; and forming a resonator active area using at least a portion of the epitaxial material to electrically and spatially isolate the first electrode member from the second electrode member; wherein the treating of the surface region comprises cleaning the surface region.
This invention relates to the fabrication of integrated circuits incorporating piezoelectric materials for resonator applications. The method addresses challenges in integrating single-crystal piezoelectric materials with semiconductor substrates to create high-performance resonators with efficient electrical connections. The process begins with a substrate having a surface region and a backside region. The surface region is cleaned to prepare it for epitaxial growth. A single-crystal piezoelectric material is then deposited over the surface region to a controlled thickness. A trench is formed through the piezoelectric layer to expose part of the underlying substrate. A metal landing pad is deposited in the trench, contacting the exposed substrate region. Two electrode structures are formed on the topside: one electrode overlies the piezoelectric material, while the other is positioned over the landing pad. The backside of the substrate is processed to create a trench that exposes the backside of the piezoelectric material and the landing pad. A conductive metal layer is deposited on the backside, electrically connecting the piezoelectric material to the landing pad, which in turn connects to the second electrode. This configuration forms a resonator active area where the piezoelectric material is electrically and spatially isolated between the two electrodes. The method ensures proper electrical coupling and mechanical isolation for the resonator, enabling efficient signal transmission and resonance. The cleaning step ensures optimal adhesion and quality of the epitaxial piezoelectric layer. The backside processing allows for direct electrical access to the resonator structure, improving performance and integration with other circuit components.
9. A method of manufacturing an integrated circuit, the method comprising: providing a substrate member that includes a surface region and a backside region; treating the surface region to prepare the surface region for growth; forming an epitaxial material comprising single crystal piezo material overlying the surface region to a desired thickness; forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material; forming a topside landing pad metal within a vicinity of the trench region and overlying the exposed portion of the surface region; forming at least a pair of topside electrode members, including a first electrode member overlying a portion of the epitaxial material, and a second electrode member overlying the topside landing pad metal; processing the backside of the substrate member to form a backside trench region exposing a backside of the epitaxial material overlying the first electrode member, and exposing a backside of the landing pad metal; forming a backside resonator metal material overlying the backside of the epitaxial material to form a connection from the epitaxial material to the backside of the landing pad metal to couple to the second electrode member overlying the topside landing pad metal; and wherein the epitaxial material is characterized by a surface region of at least 50 micron by 50 micron; and wherein the epitaxial material is configured in a first strain state to compensate to the substrate member.
This invention relates to the fabrication of integrated circuits incorporating piezoelectric resonators. The method addresses challenges in integrating single-crystal piezoelectric materials with semiconductor substrates to create high-performance resonators for applications such as filters, sensors, and oscillators. The process begins with a substrate having a surface region and a backside region. The surface region is treated to prepare it for epitaxial growth, followed by the deposition of a single-crystal piezoelectric material to a specified thickness. A trench is then formed in the piezoelectric material to expose part of the underlying substrate. A topside landing pad metal is deposited near the trench, covering the exposed substrate region. Two topside electrode members are formed: one over the piezoelectric material and another over the landing pad metal. The backside of the substrate is processed to create a backside trench, exposing the backside of the piezoelectric material and the landing pad metal. A backside resonator metal is deposited to connect the piezoelectric material to the landing pad metal, electrically coupling it to the topside electrode. The piezoelectric material has a minimum surface area of 50 microns by 50 microns and is configured in a strain-compensated state to match the substrate. This method enables precise integration of piezoelectric resonators with semiconductor substrates, improving performance and reliability in microelectronic devices.
10. A method of manufacturing an integrated circuit, the method comprising: providing a substrate member that includes a surface region and a backside region; treating the surface region to prepare the surface region for growth; forming an epitaxial material comprising single crystal piezo material overlying the surface region to a desired thickness; forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material; forming a topside landing pad metal within a vicinity of the trench region and overlying the exposed portion of the surface region; forming at least a pair of topside electrode members, including a first electrode member overlying a portion of the epitaxial material, and a second electrode member overlying the topside landing pad metal; processing the backside of the substrate member to form a backside trench region exposing a backside of the epitaxial material overlying the first electrode member, and exposing a backside of the landing pad metal; forming a backside resonator metal material overlying the backside of the epitaxial material to form a connection from the epitaxial material to the backside of the landing pad metal to couple to the second electrode member overlying the topside landing pad metal; and forming a reflector region coupled to the first electrode member.
This invention relates to the fabrication of integrated circuits incorporating piezoelectric resonators. The method addresses challenges in creating high-performance piezoelectric devices by improving electrical connections and structural integrity. A substrate with surface and backside regions is prepared, and its surface is treated to enable epitaxial growth of a single-crystal piezoelectric material to a specified thickness. A trench is then formed in the epitaxial layer to expose part of the underlying substrate. A metal landing pad is deposited in the trench vicinity, covering the exposed substrate area. Two electrode structures are formed: one on the epitaxial material and another on the landing pad. The substrate's backside is processed to create a trench that exposes the backside of the epitaxial layer and the landing pad metal. A conductive metal layer is deposited on the backside, connecting the epitaxial material to the landing pad metal, which in turn connects to the topside electrode. Additionally, a reflector structure is integrated with the first electrode to enhance performance. This method enables efficient electrical coupling and mechanical stability in piezoelectric resonators for applications in integrated circuits.
11. A method of manufacturing an integrated circuit, the method comprising: providing a substrate member that includes a surface region and a backside region; treating surface region to prepare surface region for growth; forming an epitaxial material comprising single crystal piezo material overlying the surface region to a desired thickness; forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material; forming a topside landing pad metal within a vicinity of the trench region and overlying the exposed portion of the surface region; forming at least a pair of topside electrode members, including a first electrode member overlying a portion of the epitaxial material, and a second electrode member overlying the topside landing pad metal; processing the backside of the substrate member to form a backside trench region comprising a first recessed region to expose a backside of the epitaxial material overlying the first electrode member, and a second recessed region to expose a backside of the landing pad metal; forming a backside resonator metal material overlying the backside of the epitaxial material to form a connection from the epitaxial material to the backside of the landing pad metal to couple to the second electrode member overlying the topside landing pad metal; forming a resonator active area using at least a portion of the epitaxial material to electrically and spatially isolate the first electrode member from the second electrode member; and forming a dielectric passivation material comprising a silicon dioxide and a silicon nitride overlying a resulting structure overlying the substrate member, wherein the resulting structure at least includes the first and second electrode members.
This invention relates to the fabrication of integrated circuits incorporating piezoelectric resonators. The method addresses challenges in integrating single-crystal piezoelectric materials with semiconductor substrates to create high-performance resonators for applications such as filters, oscillators, and sensors. The process begins with a substrate having a surface region and a backside region. The surface region is prepared for epitaxial growth, followed by the deposition of a single-crystal piezoelectric material to a specified thickness. A trench is then formed through the piezoelectric layer to expose the underlying substrate, and a metal landing pad is deposited in the trench vicinity. Two electrode members are formed: one on the piezoelectric material and another on the landing pad. The substrate's backside is processed to create trenches that expose the backside of the piezoelectric material and the landing pad. A backside metal layer is deposited to connect the piezoelectric material to the landing pad, electrically coupling it to the topside electrode. The piezoelectric material forms the resonator's active area, isolating the two electrodes. Finally, a dielectric passivation layer, composed of silicon dioxide and silicon nitride, is applied to protect the structure. This method enables precise integration of piezoelectric resonators with semiconductor substrates, enhancing performance and reliability in microelectronic devices.
12. The method of claim 11 wherein the first recessed region and the second recessed region is isolated physically by a rib structure to provide mechanical support to the epitaxial material, the rib structure comprising a surface region co-planar with a backside surface of the substrate member.
This invention relates to semiconductor device fabrication, specifically addressing structural integrity in epitaxial growth processes. The problem being solved involves maintaining mechanical stability in semiconductor substrates during epitaxial layer deposition, particularly when forming recessed regions that could otherwise lead to structural weaknesses or defects. The invention describes a method for fabricating a semiconductor structure where a substrate member includes a first recessed region and a second recessed region. These recessed regions are physically isolated from each other by a rib structure, which provides mechanical support to the epitaxial material deposited on the substrate. The rib structure includes a surface region that is co-planar with the backside surface of the substrate member, ensuring uniform structural support and preventing deformation or cracking during subsequent processing steps. The rib structure's design helps maintain the integrity of the epitaxial layers while allowing precise control over the recessed regions' formation. This approach is particularly useful in applications requiring high-precision semiconductor devices, such as advanced transistors or photonic components, where structural stability is critical. The method ensures that the epitaxial material remains intact and properly supported, enhancing device reliability and performance.
13. The method of claim 11 wherein the epitaxial material includes a single crystal piezo material selected from at least one of AlN, AlGaN, InN, BN, and other group III nitrides; or wherein the epitaxial material includes a single crystal oxide selected from at least one of a high K dielectric, ZnO, and MgO.
This invention relates to the field of semiconductor and piezoelectric materials, specifically addressing the need for high-performance epitaxial materials in electronic and electromechanical devices. The method involves depositing epitaxial material onto a substrate to form a single crystal structure with enhanced piezoelectric or dielectric properties. The epitaxial material can be a single crystal piezoelectric material, such as aluminum nitride (AlN), aluminum gallium nitride (AlGaN), indium nitride (InN), boron nitride (BN), or other group III nitrides, which are known for their strong piezoelectric response. Alternatively, the epitaxial material can be a single crystal oxide, including high-K dielectrics, zinc oxide (ZnO), or magnesium oxide (MgO), which offer superior dielectric properties for advanced semiconductor applications. The deposition process ensures precise control over the crystal structure, enabling the material to exhibit optimal piezoelectric or dielectric performance. This approach is particularly useful in devices requiring high-frequency operation, energy harvesting, or high-efficiency power conversion, where material properties significantly impact device functionality. The invention provides a solution for integrating high-quality epitaxial materials into semiconductor and piezoelectric devices, improving their efficiency and reliability.
14. A method of manufacturing an integrated circuit, the method comprising: providing a substrate member that includes a surface region and a backside region; treating surface region to prepare surface region for growth; forming an epitaxial material comprising single crystal piezo material overlying the surface region to a desired thickness; forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material; forming a topside landing pad metal within a vicinity of the trench region and overlying the exposed portion of the surface region; forming at least a pair of topside electrode members, including a first electrode member overlying a portion of the epitaxial material, and a second electrode member overlying the topside landing pad metal; processing the backside of the substrate member to form a backside trench region comprising a first recessed region to expose a backside of the epitaxial material overlying the first electrode member, and a second recessed region to expose a backside of the landing pad metal; and forming a backside resonator metal material overlying the backside of the epitaxial material to form a connection from the epitaxial material to the backside of the landing pad metal to couple to the second electrode member overlying the topside landing pad metal; wherein the epitaxial material is characterized by a surface region of at least 50 micron by 50 micron; and wherein the epitaxial material is configured in a first strain state to compensate to the substrate member.
This invention relates to the fabrication of integrated circuits incorporating piezoelectric resonators. The method addresses challenges in integrating single-crystal piezoelectric materials with semiconductor substrates, particularly for high-performance resonator applications. The process begins with a substrate having a surface and backside region. The surface is prepared for epitaxial growth, followed by deposition of a single-crystal piezoelectric material to a controlled thickness. A trench is etched through the piezoelectric layer to expose the underlying substrate. A topside landing pad metal is formed in the trench, followed by two electrode structures: one on the piezoelectric material and another on the landing pad. The substrate backside is then processed to create trenches that expose both the backside of the piezoelectric material and the landing pad metal. A backside resonator metal is deposited to electrically connect the piezoelectric material to the landing pad, linking it to the topside electrode. The piezoelectric material has a minimum surface area of 50x50 microns and is pre-strained to compensate for substrate-induced stress. This configuration enables efficient electrical coupling and mechanical resonance in the piezoelectric layer, improving resonator performance in integrated circuits.
15. A method of manufacturing an integrated circuit, the method comprising: providing a substrate member that includes a surface region and a backside region; treating surface region to prepare surface region for growth; forming an epitaxial material comprising single crystal piezo material overlying the surface region to a desired thickness; forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material; forming a topside landing pad metal within a vicinity of the trench region and overlying the exposed portion of the surface region; forming at least a pair of topside electrode members, including a first electrode member overlying a portion of the epitaxial material, and a second electrode member overlying the topside landing pad metal; processing the backside of the substrate member to form a backside trench region comprising a first recessed region to expose a backside of the epitaxial material overlying the first electrode member, and a second recessed region to expose a backside of the landing pad metal; forming a backside resonator metal material overlying the backside of the epitaxial material to form a connection from the epitaxial material to the backside of the landing pad metal to couple to the second electrode member overlying the topside landing pad metal; and forming a reflector region coupled to the first electrode member; wherein each of the first electrode material and the second electrode material is selected from tantalum or molybdenum; wherein the substrate is selected from a silicon, a gallium arsenide, gallium nitride, aluminum nitride, or an aluminum oxide.
This invention relates to the fabrication of integrated circuits incorporating piezoelectric materials for resonator applications. The method addresses challenges in integrating single-crystal piezoelectric materials with semiconductor substrates to create high-performance resonators with efficient electrical connections. The process begins with a substrate, such as silicon, gallium arsenide, gallium nitride, aluminum nitride, or aluminum oxide, which has a surface region and a backside region. The surface region is treated to prepare it for epitaxial growth. A single-crystal piezoelectric material is then deposited over the surface region to a desired thickness. A trench is formed through the piezoelectric material to expose part of the underlying substrate, and a topside landing pad metal is deposited in the vicinity of the trench, contacting the exposed substrate. Two topside electrode members are formed: one overlying the piezoelectric material and another overlying the landing pad metal. The backside of the substrate is processed to create a backside trench, exposing both the backside of the piezoelectric material (aligned with the first electrode) and the backside of the landing pad metal. A backside resonator metal is deposited to connect the piezoelectric material to the landing pad metal, electrically coupling it to the second topside electrode. A reflector region is also formed and coupled to the first electrode. The electrode materials are selected from tantalum or molybdenum for optimal performance. This method enables efficient electrical coupling and mechanical support for piezoelectric resonators in integrated circuits.
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November 28, 2016
December 24, 2019
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