A method for depositing a film to form an air gap within a semiconductor device is disclosed. An exemplary method comprises pulsing a metal halide precursor onto the substrate and pulsing an oxygen precursor onto a selective deposition surface. The method can be used to form an air gap to, for example, reduce a parasitic resistance of the semiconductor device.
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1. A method of forming an air gap for a semiconductor device through selective deposition comprising: providing a substrate for processing in a reaction chamber; forming a first surface overlying the substrate for selectively depositing a film, wherein the first surface comprises a first substantially vertical portion; forming a second surface, wherein the second surface comprises a second substantially vertical portion; and selectively depositing the film at least on the first substantially vertical portion of the first surface relative to the second substantially vertical portion, wherein a portion of the film at least partially defines the air gap, wherein the first surface comprises metal and the second surface comprises silicon and wherein the second surface does not comprise metal.
This invention relates to semiconductor manufacturing, specifically forming air gaps in semiconductor devices through selective deposition. The technology addresses challenges in creating precise air gaps, which are used to reduce parasitic capacitance and improve device performance. Traditional methods often struggle with selectivity and uniformity during deposition. The method involves providing a substrate in a reaction chamber. A first surface is formed over the substrate, featuring a substantially vertical portion, and is composed of metal. A second surface is also formed, with a substantially vertical portion, but this surface is made of silicon and contains no metal. A film is then selectively deposited, primarily on the metal surface relative to the silicon surface. The deposited film at least partially defines an air gap, with the selective deposition ensuring precise formation while avoiding unwanted deposition on the silicon surface. This selective process enhances control over air gap dimensions and improves device reliability. The technique leverages material selectivity to achieve high-precision air gap formation, addressing limitations in conventional deposition methods.
2. The method of claim 1 , further comprising forming a third surface and forming a fourth surface, wherein the third surface comprises the same material as the first surface, wherein the fourth surface comprises the same material as the second surface, and wherein the deposition is selective on third surface relative to the deposition the fourth surface.
This invention relates to selective deposition techniques in semiconductor manufacturing, specifically addressing challenges in depositing materials onto specific surfaces while minimizing deposition on others. The method involves forming a third surface and a fourth surface, where the third surface is composed of the same material as a first surface, and the fourth surface is composed of the same material as a second surface. The deposition process is selective, meaning it preferentially deposits material onto the third surface while minimizing or avoiding deposition on the fourth surface. This selectivity is achieved through differences in material properties or deposition conditions, allowing precise control over material placement. The technique is useful in applications requiring selective material deposition, such as in the fabrication of integrated circuits, where precise layer formation is critical. By ensuring that deposition occurs only on intended surfaces, the method improves manufacturing yield and reduces defects caused by unintended material accumulation. The approach leverages material compatibility and deposition selectivity to enhance process efficiency and accuracy in semiconductor production.
3. The method of claim 2 , wherein both the third and the fourth surfaces comprise substantially vertical portions and selectively depositing the film comprises deposition on the said first and third vertical surfaces.
This invention relates to a method for selectively depositing a film on vertical surfaces in a semiconductor or microelectronic fabrication process. The problem addressed is the challenge of precisely depositing thin films on specific vertical surfaces while avoiding deposition on other surfaces, which is critical for advanced device manufacturing where selective deposition improves performance and reduces defects. The method involves a multi-step process where a substrate with multiple surfaces is prepared. The substrate includes at least a first surface, a second surface, a third surface, and a fourth surface. The third and fourth surfaces are substantially vertical, meaning they are oriented perpendicular to the substrate plane. The selective deposition process targets the first and third vertical surfaces, ensuring that the film is applied only to these designated areas while avoiding the second and fourth surfaces. The deposition is controlled through a combination of masking, etching, or other selective deposition techniques, allowing precise film placement. This selective deposition is particularly useful in applications such as 3D semiconductor structures, where film deposition must be confined to specific regions to maintain electrical isolation or structural integrity. The method ensures that only the intended vertical surfaces receive the film, improving manufacturing yield and device reliability.
4. The method of claim 1 , wherein the step of selectively depositing the film substantially closes the air gap.
A method for semiconductor fabrication involves selectively depositing a film to substantially close an air gap in a microelectronic structure. The process addresses challenges in integrated circuit manufacturing where air gaps, often formed during etching or deposition steps, can lead to reliability issues, such as mechanical instability or electrical shorting. The method ensures precise film deposition to fill these gaps without overfilling adjacent regions, maintaining structural integrity and performance. The deposition technique may involve chemical vapor deposition (CVD), atomic layer deposition (ALD), or other selective deposition methods that target specific surfaces while avoiding unintended areas. The film material is chosen to provide mechanical support, electrical insulation, or thermal conductivity, depending on the application. The selective deposition step is controlled by parameters such as temperature, pressure, precursor flow rates, or plasma conditions to achieve uniform gap closure. This method is particularly useful in advanced node semiconductor devices where feature sizes are extremely small, and precise gap management is critical for yield and device functionality. The technique may be integrated into existing fabrication processes to enhance reliability and performance without requiring significant modifications to the production line.
5. The method of claim 1 , further comprising: forming a dielectric layer at least on top of the film, wherein the dielectric layer defines a portion of the air gap.
A method for semiconductor fabrication involves creating an air gap structure to improve electrical insulation and reduce parasitic capacitance in integrated circuits. The process includes depositing a sacrificial material to form a film, which is later removed to create an air gap. This air gap enhances device performance by minimizing unwanted electrical interactions between conductive elements. The method further includes forming a dielectric layer at least on top of the film, where the dielectric layer partially defines the boundaries of the air gap. The dielectric layer provides structural support while allowing the sacrificial material to be selectively removed, ensuring the air gap remains intact. This approach is particularly useful in advanced semiconductor devices where minimizing capacitance and improving signal integrity are critical. The technique can be applied in various semiconductor manufacturing processes, including those involving metal interconnects and dielectric insulation layers. The air gap formation reduces dielectric constant effects, leading to improved device speed and efficiency. The method is compatible with existing semiconductor fabrication techniques and can be integrated into standard processing flows.
6. The method of claim 1 , wherein selectively depositing the film comprises the film growing horizontally from the first substantially vertical portion toward the second substantially vertical portion.
This invention relates to a method for depositing a thin film in semiconductor manufacturing, specifically addressing challenges in forming conformal or directional film growth on vertical or near-vertical surfaces. The method involves depositing a film that grows horizontally from a first substantially vertical portion of a substrate toward a second substantially vertical portion, enabling precise control over film thickness and uniformity in high-aspect-ratio structures. The film deposition process may include techniques such as atomic layer deposition (ALD), chemical vapor deposition (CVD), or other methods that allow selective growth in a horizontal direction. The method ensures that the film does not grow excessively on the vertical surfaces, reducing defects and improving uniformity in microelectronic devices. This approach is particularly useful in applications requiring precise film thickness control, such as in the fabrication of transistors, capacitors, or other semiconductor components with complex geometries. The invention overcomes limitations in conventional deposition methods where film growth on vertical surfaces can lead to non-uniformity or over-deposition, which can degrade device performance. By controlling the horizontal growth direction, the method enables better conformality and reduces the need for additional etching or planarization steps.
7. The method of claim 1 , wherein step of selectively depositing the film comprises chemical vapor deposition.
A method for selectively depositing a film on a substrate addresses challenges in semiconductor manufacturing where precise material placement is required to enhance device performance. The process involves depositing a film on a substrate in a controlled manner to form specific patterns or layers, which is critical for applications such as integrated circuits, sensors, or microelectromechanical systems (MEMS). The selective deposition ensures that the film is applied only to designated areas, avoiding unwanted material buildup that could degrade functionality or yield. The deposition step is performed using chemical vapor deposition (CVD), a technique where gaseous precursors react or decompose on the substrate surface to form a solid film. CVD is chosen for its ability to produce high-quality, conformal coatings with precise thickness control. The method may also include pre-treatment steps to prepare the substrate surface, such as cleaning or surface activation, to ensure optimal adhesion and uniformity of the deposited film. Post-deposition treatments, like annealing or etching, may further refine the film's properties or remove excess material. This approach improves manufacturing efficiency by reducing waste and enhancing precision, which is particularly valuable in advanced semiconductor fabrication where feature sizes are increasingly small. The selective nature of the deposition minimizes the need for additional patterning steps, streamlining the overall process. The method is adaptable to various materials, including metals, dielectrics, and semiconductors, making it versatile for different applications.
8. The method of claim 1 , wherein the thickness of the film is greater than 10 nm.
A method for forming a thin film on a substrate involves depositing a material layer with a controlled thickness to address challenges in achieving uniform and precise film thickness in semiconductor or microelectronic manufacturing. The method includes selecting a deposition technique, such as chemical vapor deposition (CVD) or physical vapor deposition (PVD), and adjusting process parameters like temperature, pressure, and precursor flow rates to ensure the film thickness exceeds 10 nanometers. This thickness requirement is critical for applications where mechanical stability, electrical conductivity, or barrier properties are essential, such as in protective coatings, conductive layers, or insulating films. The deposition process may involve multiple steps, including substrate preparation, film growth, and post-deposition treatment, to achieve the desired thickness and uniformity. The method ensures that the film meets performance criteria for reliability and functionality in electronic devices, sensors, or other microfabricated structures. By controlling the deposition parameters, the method avoids issues like film delamination, cracking, or insufficient coverage, which can degrade device performance. The resulting film provides a robust and consistent layer for subsequent processing steps or final device integration.
9. The method of claim 1 , wherein the selectivity of deposition of the film on the first substantially vertical portion of the first surface relative to the second substantially vertical portion is greater than 80%.
The invention relates to a method for selectively depositing a film on a substrate with substantially vertical surfaces, addressing the challenge of achieving high deposition selectivity between different vertical portions of the substrate. The method involves depositing a film on a first substantially vertical portion of a surface while minimizing deposition on a second substantially vertical portion of the same surface. The selectivity of deposition on the first vertical portion relative to the second is greater than 80%, ensuring precise control over film placement. The method may include pre-treatment steps to modify surface properties, such as altering chemical composition or surface energy, to enhance selectivity. Deposition techniques may involve chemical vapor deposition (CVD), atomic layer deposition (ALD), or other methods that allow directional control of film growth. The method may also include post-deposition processing to further refine film properties or remove unwanted deposits. The invention is particularly useful in semiconductor manufacturing, where selective deposition is critical for fabricating advanced devices with complex three-dimensional structures. By achieving high selectivity, the method enables precise patterning and reduces the need for additional etching or masking steps, improving efficiency and yield.
10. The method of claim 1 , wherein the air gap is part of an integrated circuit.
This invention relates to integrated circuits with air gaps to improve performance. The air gap is a region within the integrated circuit that is intentionally left empty, reducing parasitic capacitance and improving signal propagation. The air gap is formed between conductive elements, such as metal interconnects, to minimize unwanted electrical interactions. The air gap is created during the fabrication process, typically by etching away a sacrificial material that was initially deposited between the conductive elements. This technique enhances the electrical properties of the integrated circuit by reducing signal delay and power consumption. The air gap may be formed in various layers of the integrated circuit, including interconnect layers and dielectric layers, to optimize overall performance. The invention addresses the challenge of improving signal integrity and efficiency in high-density integrated circuits by leveraging the low dielectric constant of air compared to traditional insulating materials. The air gap structure is designed to be mechanically stable while providing superior electrical insulation. This approach is particularly useful in advanced semiconductor devices where minimizing parasitic effects is critical for high-speed operation.
11. The method of claim 1 , wherein the air gap is part of an integrated circuit and size of the air gap is more than 35% of the space between metallization lines.
This invention relates to integrated circuits (ICs) with air gaps between metallization lines to improve electrical performance. The problem addressed is the parasitic capacitance and signal delay caused by closely spaced metal lines in ICs, which degrade performance in high-speed circuits. Traditional solutions involve complex dielectric materials, but these are costly and may not sufficiently reduce capacitance. The invention introduces an air gap within the IC structure, specifically sized to be more than 35% of the space between adjacent metallization lines. This air gap is formed by selectively removing a sacrificial material after the metallization process, leaving an air-filled void. The air gap significantly reduces parasitic capacitance between metal lines, improving signal integrity and reducing propagation delays. The method ensures structural integrity by controlling the gap size and placement to avoid mechanical instability. The air gap can be formed using techniques such as etching or chemical removal of a sacrificial layer, which is deposited alongside the metallization. This approach is compatible with standard IC fabrication processes, making it scalable for advanced semiconductor manufacturing. The invention is particularly useful in high-performance ICs where minimizing signal delay and power consumption is critical.
12. A method of forming an air gap for a semiconductor device through selective deposition comprising: providing a substrate for processing in a reaction chamber; forming a first surface overlying the substrate for selectively depositing a film, wherein the first surface comprises a first substantially vertical portion; forming a second surface, wherein the second surface comprises a second substantially vertical portion; and selectively depositing the film at least on the first substantially vertical portion of the first surface relative to the second substantially vertical portion, wherein a portion of the film at least partially defines the air gap, wherein the step of selectively depositing the film comprises: pulsing a metal halide precursor on the first substantially vertical surface; pulsing an oxygen precursor on the first substantially vertical surface; and repeating the pulsing steps until the film grows to a desired thickness.
This invention relates to semiconductor fabrication, specifically forming air gaps in devices through selective deposition to improve electrical performance and reduce parasitic capacitance. The method addresses challenges in creating precise air gaps in high-density semiconductor structures, where conventional deposition techniques often result in unwanted film growth on non-target surfaces. The process begins with a substrate placed in a reaction chamber. A first surface is formed on the substrate, featuring a substantially vertical portion where selective film deposition is desired. A second surface is also formed, with its own substantially vertical portion. The key innovation is the selective deposition of a film on the first vertical portion while minimizing deposition on the second vertical portion. This selective growth defines an air gap, which can enhance device performance by reducing dielectric constant in critical regions. The selective deposition is achieved through a cyclic process involving metal halide and oxygen precursors. The metal halide precursor is pulsed onto the first vertical surface, followed by an oxygen precursor pulse. These steps are repeated until the film reaches the desired thickness. The method ensures precise control over film growth, enabling the formation of air gaps in complex semiconductor structures without unwanted deposition on adjacent surfaces. This technique is particularly useful in advanced semiconductor manufacturing where precise air gap formation is critical for performance optimization.
13. The method of claim 12 , wherein the metal halide precursor comprises one or more of NbCl 5 and TaCl 5 .
This invention relates to a method for synthesizing metal halide precursors, specifically focusing on the use of niobium pentachloride (NbCl5) and tantalum pentachloride (TaCl5). The method addresses the challenge of producing high-purity metal halide compounds, which are critical for applications in chemical vapor deposition (CVD), atomic layer deposition (ALD), and other advanced materials processing techniques. The process involves a controlled reaction to form these metal halides, ensuring high yield and purity, which are essential for their use in semiconductor manufacturing and other high-precision industries. The method may include steps such as purification, crystallization, or other refinement processes to achieve the desired properties. The resulting metal halide precursors are particularly useful in the deposition of thin films, where purity and consistency are paramount. This invention improves upon existing methods by providing a more efficient and reliable synthesis route for these key precursors, addressing issues such as impurities and low yield that can hinder their performance in advanced applications.
14. The method of claim 12 , wherein the oxygen precursor comprises at least one of: water (H 2 O), oxygen (O 2 ), ozone (O 3 ), hydrogen peroxide (H 2 O 2 ), atomic oxygen (O), oxygen radicals, and oxygen plasma.
This invention relates to methods for incorporating oxygen into materials, particularly in semiconductor or thin-film deposition processes. The problem addressed is the need for efficient and controlled oxygen incorporation to enhance material properties, such as electrical conductivity, optical transparency, or chemical stability. The method involves using an oxygen precursor to introduce oxygen into a target material during deposition or post-treatment. The oxygen precursor can be selected from a variety of sources, including water (H2O), oxygen (O2), ozone (O3), hydrogen peroxide (H2O2), atomic oxygen (O), oxygen radicals, or oxygen plasma. These precursors are chosen based on their reactivity, stability, and compatibility with the deposition process. The method ensures precise oxygen incorporation, improving material performance in applications like thin-film transistors, sensors, or energy storage devices. The use of different oxygen precursors allows for tuning the oxygen content and bonding states, enabling optimization of material properties for specific applications. This approach is particularly useful in processes where traditional oxygen sources may be insufficient or where controlled oxidation is critical.
15. The method of claim 12 , wherein a temperature of the reaction chamber ranges between 20 and 600° C., between 100 and 500° C., between 150 and 400° C., or between 175 and 375° C.
This invention relates to a method for controlling the temperature of a reaction chamber during a chemical process. The method addresses the challenge of maintaining precise temperature conditions to optimize reaction efficiency, product yield, or material properties. The reaction chamber is heated or cooled to a specific temperature range to facilitate the desired chemical reactions or material transformations. The temperature is controlled within defined ranges, such as between 20 and 600°C, 100 and 500°C, 150 and 400°C, or 175 and 375°C, depending on the process requirements. The method ensures that the reaction conditions remain stable, preventing deviations that could lead to incomplete reactions, byproduct formation, or degradation of the reaction environment. The temperature control may involve heating elements, cooling systems, or a combination of both, adjusted dynamically to maintain the desired range. This approach is applicable in various industries, including chemical synthesis, semiconductor manufacturing, and material processing, where precise temperature regulation is critical for achieving consistent and high-quality results. The method may also incorporate feedback mechanisms to monitor and adjust the temperature in real-time, ensuring optimal performance throughout the process.
16. The method of claim 12 , further comprising forming a third surface and forming a fourth surface, wherein the third surface comprises the same material as the first surface, wherein the fourth surface comprises the same material as the second surface, and wherein the deposition is selective on third surface relative to the deposition the fourth surface.
This invention relates to selective deposition techniques in semiconductor manufacturing, addressing challenges in precisely depositing materials on specific surfaces while avoiding unintended deposition on others. The method involves forming a third surface and a fourth surface, where the third surface is composed of the same material as a first surface, and the fourth surface is composed of the same material as a second surface. The deposition process is selective, meaning it preferentially deposits material on the third surface while minimizing or avoiding deposition on the fourth surface. This selectivity is achieved through differences in material properties or deposition conditions, ensuring precise control over material placement. The technique is particularly useful in fabricating advanced semiconductor devices where selective deposition is critical for performance and reliability. By enabling targeted material deposition, the method helps avoid defects, improve yield, and enhance device functionality. The approach can be applied in various semiconductor processes, including metallization, dielectric layer formation, and other steps requiring precise material placement.
17. The method of claim 16 , wherein both the third and the fourth surfaces comprise substantially vertical portions and selectively depositing the film comprises deposition on the said first and third vertical surfaces.
This invention relates to a method for selectively depositing a film on vertical surfaces in a semiconductor or microelectronic fabrication process. The method addresses the challenge of precisely controlling film deposition on specific vertical surfaces while avoiding unwanted deposition on other surfaces, which is critical for advanced device manufacturing. The method involves a substrate with multiple surfaces, including first, second, third, and fourth surfaces. The first and second surfaces are substantially horizontal, while the third and fourth surfaces are substantially vertical. The process selectively deposits a film on the first and third vertical surfaces while avoiding deposition on the second and fourth surfaces. This selective deposition is achieved through a combination of process conditions, such as directional deposition techniques, masking, or selective chemical interactions, ensuring precise film placement. The method may also include additional steps such as etching, cleaning, or further deposition to refine the film's properties or remove unwanted material. The selective deposition technique is particularly useful in forming structures like fins, vias, or interconnects in semiconductor devices, where precise film placement is essential for device performance and reliability. The invention improves manufacturing yield and reduces defects by minimizing unintended film deposition on non-target surfaces.
18. The method of claim 12 , wherein the step of selectively depositing the film substantially closes the air gap.
A method for semiconductor fabrication involves depositing a film to selectively fill or close air gaps in a microelectronic structure. The process addresses challenges in integrated circuit manufacturing where air gaps, often formed during etching or patterning steps, can lead to structural instability, electrical shorts, or performance degradation. The method includes depositing a film material, such as a dielectric or conductive layer, in a controlled manner to target specific regions while avoiding unintended deposition on adjacent surfaces. This selective deposition ensures that air gaps are substantially closed, improving device reliability and yield. The technique may involve chemical vapor deposition (CVD), atomic layer deposition (ALD), or other precision deposition methods, with process parameters adjusted to enhance selectivity. The film may be deposited conformally or selectively based on surface chemistry or temperature gradients. The method is particularly useful in advanced node semiconductor manufacturing, where feature sizes are extremely small, and air gaps can significantly impact device performance. By closing these gaps, the method enhances mechanical stability, reduces defect rates, and improves electrical isolation in microelectronic components.
19. The method of claim 12 , further comprising: forming a dielectric layer at least on top of the film, wherein the dielectric layer defines a portion of the air gap.
This invention relates to semiconductor fabrication, specifically methods for creating air gaps in integrated circuits to improve electrical performance. The problem addressed is the need to reduce parasitic capacitance and improve signal integrity in densely packed semiconductor devices by introducing air gaps between conductive structures. The method involves depositing a sacrificial material to form a film between conductive features, such as metal lines or vias, in a semiconductor substrate. The sacrificial material is then selectively removed, leaving behind an air gap in its place. This air gap reduces dielectric constant effects, lowering capacitance and improving signal propagation. The invention further includes forming a dielectric layer at least on top of the sacrificial film before removal. This dielectric layer partially defines the air gap, ensuring structural integrity while maintaining the low-k properties of the air gap. The dielectric layer may also serve as an etch stop or barrier during the removal process, preventing damage to underlying or adjacent structures. The sacrificial material may be removed using selective etching techniques, such as vapor phase etching or plasma etching, which target the sacrificial material without significantly affecting the surrounding dielectric or conductive structures. The resulting air gap improves electrical performance by reducing parasitic capacitance, enhancing signal speed, and minimizing crosstalk between adjacent conductive features. This technique is particularly useful in advanced semiconductor nodes where feature sizes are extremely small, and traditional low-k dielectric materials may not provide sufficient performance improvements.
20. The method of claim 12 , wherein selectively depositing the film comprises the film growing horizontally from the first substantially vertical portion toward the second substantially vertical portion.
This invention relates to a method for selectively depositing a thin film in semiconductor manufacturing, particularly for forming a conformal or horizontal film between two substantially vertical structures. The method addresses challenges in depositing films in high-aspect-ratio gaps or trenches where conventional techniques may result in non-uniform coverage or voids. The process involves growing the film horizontally from a first substantially vertical portion toward a second substantially vertical portion, ensuring uniform deposition across the gap. This selective deposition technique is useful in advanced semiconductor fabrication, such as in the formation of spacers, interconnects, or dielectric layers, where precise control over film thickness and uniformity is critical. The method may involve chemical vapor deposition (CVD), atomic layer deposition (ALD), or other deposition techniques that allow for directional film growth. The horizontal growth ensures that the film bridges the gap between the vertical structures without leaving voids or causing overfilling, improving device performance and reliability. The invention is particularly valuable in applications requiring high-precision film deposition in complex three-dimensional semiconductor architectures.
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December 8, 2017
January 21, 2020
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