A structure and a formation method of a semiconductor device structure are provided. The method includes forming a first fin structure, a second fin structure, and a third fin structure over a semiconductor substrate. The method includes forming first spacer elements over sidewalls of the first fin structure and the second fin structure and partially removing the first fin structure and the second fin structure. The method includes forming second spacer elements over sidewalls of the third fin structure and partially removing the third fin structure. The second spacer element is taller than the first spacer element. The method includes epitaxially growing a semiconductor material over the first fin structure, the second fin structure, and the third fin structure such that a merged semiconductor element is formed on the first fin structure and the second fin structure, and a semiconductor element is formed on the third fin structure.
Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A method for forming a semiconductor device structure, comprising: forming a first conductive feature over a semiconductor substrate; forming an oxygen-absorbing layer on a surface of the first conductive feature, wherein the oxygen-absorbing layer absorbs oxygen from the first conductive feature and becomes an oxygen-containing layer; applying a metal-containing precursor on the oxygen-containing layer to remove the oxygen-containing layer and continue to form a metal-containing layer on the first conductive feature, wherein after removing the oxygen-containing layer, the surface originally covered by the oxygen-containing layer is directly exposed to the metal-containing precursor to form the metal-containing layer on the surface; and forming a second conductive feature on the metal-containing layer.
This invention relates to semiconductor device fabrication, specifically addressing the challenge of forming reliable conductive interfaces in semiconductor structures. The method involves creating a first conductive feature on a semiconductor substrate, followed by depositing an oxygen-absorbing layer on its surface. This layer reacts with oxygen present in the first conductive feature, converting into an oxygen-containing layer. Next, a metal-containing precursor is applied, which removes the oxygen-containing layer and deposits a metal-containing layer directly onto the original surface of the first conductive feature. This ensures a clean interface free of oxygen contamination, which could degrade electrical performance. Finally, a second conductive feature is formed on the metal-containing layer, resulting in an improved conductive interface with enhanced reliability and electrical properties. The process is particularly useful for advanced semiconductor devices where interface quality is critical for performance and yield.
2. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the first conductive feature is a metal gate stack.
The invention relates to semiconductor device fabrication, specifically addressing the formation of a semiconductor device structure with an improved conductive feature. The method involves creating a semiconductor device structure where a first conductive feature is implemented as a metal gate stack. This metal gate stack serves as a critical component in the device, providing enhanced electrical conductivity and performance compared to traditional polysilicon gates. The metal gate stack typically includes multiple layers of conductive materials, such as work function metals and barrier metals, which are deposited and patterned to form the gate structure. This approach is particularly useful in advanced semiconductor nodes where high-performance and low-resistance gate structures are required. The metal gate stack is integrated into the device structure to improve device characteristics, such as threshold voltage control, drive current, and overall device efficiency. The method ensures precise formation of the metal gate stack, aligning it with other device features to maintain structural integrity and electrical performance. This technique is applicable in the fabrication of transistors, particularly in CMOS technology, where metal gates are essential for achieving desired electrical properties and reliability. The use of a metal gate stack in the semiconductor device structure addresses challenges related to resistance and scalability in modern semiconductor manufacturing.
3. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the first conductive feature is a conductive contact electrically connected to a source/drain structure.
Technical Summary: This invention relates to semiconductor device fabrication, specifically methods for forming conductive features in semiconductor structures. The problem addressed is the need for reliable electrical connections between conductive contacts and source/drain structures in semiconductor devices. The method involves forming a semiconductor device structure with a first conductive feature that serves as a conductive contact. This conductive contact is electrically connected to a source/drain structure within the device. The process ensures proper alignment and electrical connectivity between the contact and the underlying source/drain region, which is critical for device performance. The conductive contact may be formed using various materials and deposition techniques, such as chemical vapor deposition (CVD) or physical vapor deposition (PVD), to ensure low-resistance connections. The method may also include steps to form additional conductive features, such as interconnects or vias, to further integrate the device structure. The overall approach aims to improve electrical conductivity and reliability in semiconductor devices by optimizing the formation of conductive contacts to source/drain structures.
4. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the first conductive feature is a portion of a passive element.
This invention relates to semiconductor device fabrication, specifically methods for forming semiconductor device structures that incorporate passive elements. The problem addressed is the integration of passive components, such as resistors, capacitors, or inductors, into semiconductor devices while maintaining structural and electrical integrity. The method involves forming a semiconductor device structure with at least one conductive feature that serves as part of a passive element. The passive element could be a resistor, capacitor, inductor, or other passive component. The conductive feature is integrated into the device structure during fabrication, ensuring proper electrical and mechanical functionality. The method ensures that the passive element is reliably incorporated into the semiconductor device without compromising performance or reliability. The conductive feature is formed using standard semiconductor processing techniques, such as deposition, etching, or patterning, to create the desired passive element configuration. The integration of the passive element into the device structure allows for compact and efficient semiconductor designs, reducing the need for external components and improving overall device performance. The method is applicable to various semiconductor technologies, including CMOS, memory, and power devices.
5. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the oxygen-absorbing layer comprises an aluminum layer, and the oxygen-containing layer comprises an aluminum oxide layer.
This invention relates to semiconductor device fabrication, specifically addressing the challenge of oxygen contamination in semiconductor structures. The method involves forming a semiconductor device structure with an oxygen-absorbing layer and an oxygen-containing layer to mitigate oxygen-related defects. The oxygen-absorbing layer is made of aluminum, which reacts with and absorbs oxygen to prevent it from diffusing into critical regions of the device. The oxygen-containing layer is an aluminum oxide layer, which serves as a barrier or sacrificial layer to control oxygen distribution during processing. By incorporating these layers, the method reduces oxygen-induced defects, such as interface traps or charge buildup, improving device reliability and performance. The aluminum layer acts as a getter for oxygen, while the aluminum oxide layer may serve as a protective or insulating layer, depending on the device architecture. This approach is particularly useful in advanced semiconductor manufacturing where oxygen contamination can degrade device functionality. The layers are integrated into the semiconductor structure during fabrication, ensuring oxygen is effectively managed at the material interfaces. The method enhances semiconductor device quality by minimizing oxygen-related degradation, leading to more stable and efficient electronic components.
6. The method for forming a semiconductor device structure as claimed in claim 5 , wherein the oxygen-absorbing layer is formed using an aluminum-containing precursor.
A semiconductor device fabrication method involves forming an oxygen-absorbing layer to prevent oxidation during processing. The oxygen-absorbing layer is deposited using an aluminum-containing precursor, such as trimethylaluminum (TMA), to effectively capture and neutralize oxygen atoms. This layer is typically formed on a substrate or intermediate layer to protect underlying materials, such as metal interconnects or semiconductor surfaces, from oxidation during subsequent high-temperature processing steps. The aluminum-containing precursor reacts with oxygen to form a stable aluminum oxide barrier, ensuring device reliability. This technique is particularly useful in advanced semiconductor manufacturing where oxidation can degrade performance or yield. The method may be integrated into processes like atomic layer deposition (ALD) or chemical vapor deposition (CVD) to achieve precise control over layer thickness and uniformity. The oxygen-absorbing layer can also serve as a sacrificial layer, which may be removed after its protective function is fulfilled. This approach enhances manufacturing efficiency and device longevity in integrated circuit production.
7. The method for forming a semiconductor device structure as claimed in claim 6 , wherein the aluminum-containing precursor comprises triethylaluminum, dimethylaluminumhydride, trimethylaluminum, dimethylethylamine alane, or a combination thereof.
This invention relates to semiconductor device fabrication, specifically to methods for forming semiconductor device structures using aluminum-containing precursors in a deposition process. The problem addressed is the need for precise and controlled deposition of aluminum-containing layers in semiconductor manufacturing, which is critical for achieving desired electrical and structural properties in advanced devices. The method involves selecting an aluminum-containing precursor from a group that includes triethylaluminum, dimethylaluminumhydride, trimethylaluminum, dimethylethylamine alane, or a combination of these compounds. These precursors are used in a deposition process to form aluminum-containing layers on a substrate, such as in atomic layer deposition (ALD) or chemical vapor deposition (CVD). The choice of precursor influences the deposition rate, film uniformity, and purity, which are key factors in semiconductor performance. The method ensures that the aluminum-containing layer is deposited with high precision, minimizing defects and achieving the required thickness and composition. This is particularly important for applications in transistors, capacitors, and interconnect structures, where aluminum-based materials are used for conductive or insulating layers. The selection of the precursor allows for optimization of the deposition process based on specific requirements, such as thermal stability, reactivity, and compatibility with other process steps. The resulting semiconductor device structure exhibits improved electrical properties and reliability, making it suitable for advanced integrated circuits.
8. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the oxygen-absorbing layer comprises a silicon layer, and the oxygen-containing layer comprises a silicon oxide layer.
This invention relates to semiconductor device fabrication, specifically addressing the formation of a semiconductor device structure with improved material properties. The method involves creating an oxygen-absorbing layer and an oxygen-containing layer to enhance device performance and reliability. The oxygen-absorbing layer is made of a silicon layer, which is designed to absorb oxygen from adjacent layers, preventing unwanted oxidation and ensuring stable electrical characteristics. The oxygen-containing layer is a silicon oxide layer, which may serve as an insulating or passivation layer in the device. By incorporating these layers, the method controls oxygen distribution within the semiconductor structure, reducing defects and improving interface quality. This approach is particularly useful in advanced semiconductor manufacturing where precise material composition and interface properties are critical for device functionality. The technique may be applied in various semiconductor processes, including transistor fabrication, where oxygen-related defects can degrade performance. The method ensures that the silicon layer effectively absorbs excess oxygen, while the silicon oxide layer provides necessary insulation or protection, resulting in a more reliable semiconductor device.
9. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the metal-containing precursor comprises a tungsten-containing precursor.
A semiconductor device fabrication method involves forming a conductive structure using a metal-containing precursor. The method addresses challenges in depositing high-quality conductive materials, such as tungsten, for interconnects or contacts in integrated circuits. The process includes depositing a metal-containing precursor onto a substrate, followed by a reduction or conversion step to form a conductive metal layer. The precursor may be a tungsten-containing compound, such as tungsten hexafluoride (WF6), which reacts with a reducing agent like silane (SiH4) or hydrogen (H2) to deposit tungsten. The method ensures uniform deposition, good adhesion, and low resistivity, which are critical for reliable semiconductor performance. The conductive structure may be part of a contact, via, or interconnect, enabling efficient electrical connections in advanced semiconductor devices. The use of a tungsten-containing precursor is particularly advantageous for its high conductivity and compatibility with semiconductor manufacturing processes. The method may also include cleaning or surface preparation steps to enhance deposition quality. This approach supports the fabrication of high-performance semiconductor devices with precise conductive features.
10. The method for forming a semiconductor device structure as claimed in claim 9 , wherein the metal-containing precursor is substantially fluorine free.
A semiconductor device fabrication method involves forming a metal-containing film on a substrate using a metal-containing precursor. The precursor is substantially free of fluorine, reducing potential contamination or damage to the substrate or surrounding materials during deposition. The method includes delivering the precursor to a reaction chamber containing the substrate, where it reacts to form the metal-containing film. The process may involve thermal decomposition, chemical vapor deposition, or other techniques to ensure uniform film formation. The absence of fluorine in the precursor minimizes defects, improves film purity, and enhances device performance. This approach is particularly useful in advanced semiconductor manufacturing where contamination control is critical. The method may be applied to form conductive, insulating, or barrier layers in integrated circuits, ensuring reliability and compatibility with sensitive materials. The precursor's composition is carefully selected to avoid fluorine-related issues while maintaining deposition efficiency and film quality. This technique supports the fabrication of high-performance semiconductor devices with improved yield and reliability.
11. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the metal-containing precursor is selectively applied on the first conductive feature using an atomic layer deposition process.
This invention relates to semiconductor device fabrication, specifically a method for forming a semiconductor device structure with selective deposition of a metal-containing precursor. The method addresses challenges in precisely depositing conductive materials on specific regions of a semiconductor substrate without unwanted deposition on adjacent areas, which can lead to short circuits or performance degradation. The process involves selectively applying a metal-containing precursor onto a first conductive feature using atomic layer deposition (ALD). ALD is a thin-film deposition technique that allows precise control over material deposition at the atomic level, ensuring uniform and conformal coatings. By selectively depositing the precursor only on the first conductive feature, the method prevents unintended deposition on neighboring structures, such as dielectric layers or other conductive features, which could otherwise cause electrical shorts or other defects. The selective deposition is achieved by leveraging the chemical affinity between the precursor and the surface of the first conductive feature, while minimizing interaction with other materials. This selective process is particularly useful in advanced semiconductor manufacturing, where feature sizes are extremely small, and precise material placement is critical for device performance and reliability. The method can be applied in various semiconductor applications, including the formation of interconnects, contacts, or other conductive elements in integrated circuits.
12. A method for forming a semiconductor device structure, comprising: forming a first metal-containing element over a semiconductor substrate; selectively forming an oxygen-absorbing layer on a surface of the first metal-containing element, wherein the oxygen-absorbing layer absorbs oxygen from the first metal-containing element and becomes an oxygen-containing layer; selectively providing a metal-containing precursor on the oxygen-containing layer to remove the oxygen-containing layer and to continue to selectively form a metal-containing layer on the first metal-containing element, wherein after removing the oxygen-containing layer, the surface originally covered by the oxygen-containing layer is directly exposed to the metal-containing precursor to form the metal-containing layer on the surface; and forming a second metal-containing element on the metal-containing layer.
This invention relates to semiconductor device fabrication, specifically addressing the challenge of oxygen contamination in metal-containing layers, which can degrade device performance. The method involves forming a first metal-containing element over a semiconductor substrate. An oxygen-absorbing layer is then selectively deposited on the surface of this first metal-containing element. The oxygen-absorbing layer reacts with and absorbs oxygen from the first metal-containing element, transforming into an oxygen-containing layer. Next, a metal-containing precursor is selectively introduced onto the oxygen-containing layer. This precursor reacts with and removes the oxygen-containing layer, exposing the original surface of the first metal-containing element. The precursor then continues to deposit a metal-containing layer directly onto this exposed surface. Finally, a second metal-containing element is formed on top of the newly deposited metal-containing layer. This process ensures that oxygen impurities are effectively removed, improving the quality and reliability of the semiconductor device structure. The selective formation steps prevent unwanted deposition on adjacent areas, enhancing precision in the fabrication process.
13. The method for forming a semiconductor device structure as claimed in claim 12 , further comprising: forming a dielectric layer over the first metal-containing element; and forming an opening in the dielectric layer to expose the first metal-containing element before selectively forming the oxygen-absorbing layer.
This invention relates to semiconductor device fabrication, specifically addressing challenges in forming reliable metal interconnect structures. The method involves creating a semiconductor device structure with improved electrical performance and reliability by incorporating an oxygen-absorbing layer to prevent oxidation of metal-containing elements. The process begins by forming a first metal-containing element, such as a metal line or contact, on a substrate. A dielectric layer is then deposited over the metal-containing element, followed by etching an opening in the dielectric layer to expose the metal surface. Before forming subsequent layers, an oxygen-absorbing layer is selectively deposited on the exposed metal to prevent oxidation during subsequent processing steps. This ensures the metal remains conductive and reliable. The method may also include forming additional metal-containing elements or interconnect layers, where the oxygen-absorbing layer is applied selectively to exposed metal surfaces to maintain electrical integrity. The invention improves semiconductor device performance by reducing resistance and preventing degradation due to oxidation, particularly in advanced nodes where metal lines are more susceptible to oxidation-related failures.
14. The method for forming a semiconductor device structure as claimed in claim 12 , wherein the oxygen-absorbing layer is formed using an aluminum-containing precursor.
The invention relates to semiconductor device fabrication, specifically addressing the challenge of oxygen contamination during the formation of semiconductor structures. Oxygen absorption in semiconductor layers can degrade device performance by introducing defects and altering electrical properties. The invention provides a method to mitigate this issue by incorporating an oxygen-absorbing layer during the fabrication process. This layer is formed using an aluminum-containing precursor, which effectively captures and neutralizes oxygen atoms, preventing them from contaminating critical regions of the device. The aluminum-containing precursor may include compounds such as trimethylaluminum (TMA) or other aluminum-based materials that react with oxygen to form stable aluminum oxide compounds. The oxygen-absorbing layer is deposited on a substrate or an intermediate layer, such as a semiconductor or dielectric material, before or after the formation of other device components. This approach ensures that oxygen impurities are trapped and immobilized, preserving the integrity of the semiconductor structure. The method is particularly useful in advanced semiconductor manufacturing, where precise control of material purity is essential for achieving high-performance devices. By using an aluminum-containing precursor, the invention provides a reliable and efficient solution for oxygen contamination, enhancing the reliability and performance of semiconductor devices.
15. The method for forming a semiconductor device structure as claimed in claim 12 , wherein the metal-containing precursor is substantially fluorine free.
The semiconductor device fabrication process involves forming a metal-containing layer on a substrate using a metal-containing precursor. The precursor is substantially free of fluorine, reducing potential contamination and improving film quality. The method includes depositing the precursor onto a substrate, where the precursor reacts to form a metal-containing layer. This layer may serve as a conductive or barrier layer in semiconductor devices. The fluorine-free precursor minimizes defects and enhances uniformity, addressing issues related to fluorine-induced damage in conventional processes. The technique is particularly useful for advanced semiconductor manufacturing, where purity and film integrity are critical. The process may be applied in various deposition methods, including chemical vapor deposition (CVD) or atomic layer deposition (ALD), to achieve precise control over film properties. By eliminating fluorine, the method improves device reliability and performance, making it suitable for high-end semiconductor applications.
16. The method for forming a semiconductor device structure as claimed in claim 12 , wherein the metal-containing precursor is provided using an atomic layer deposition process.
This invention relates to semiconductor device fabrication, specifically addressing challenges in forming precise and uniform metal-containing layers. The method involves depositing a metal-containing precursor onto a substrate to create a semiconductor device structure. The deposition process is controlled to ensure accurate material placement and layer uniformity, which is critical for device performance and reliability. A key aspect of the invention is the use of an atomic layer deposition (ALD) process to deliver the metal-containing precursor. ALD is a highly controlled technique that enables atomic-level precision in film deposition, minimizing defects and improving layer uniformity. The method is particularly useful in advanced semiconductor manufacturing where precise material deposition is essential for high-performance devices. The invention may be applied to various semiconductor structures, including transistors, capacitors, and interconnects, where consistent and defect-free metal layers are required. The ALD process ensures that the metal-containing precursor is deposited in a layer-by-layer manner, enhancing control over film thickness and composition. This approach helps address issues such as non-uniformity, contamination, and poor adhesion that can arise in conventional deposition methods. The resulting semiconductor device structure exhibits improved electrical properties and reliability, making it suitable for advanced integrated circuits and other high-performance applications.
17. The method for forming a semiconductor device structure as claimed in claim 12 , wherein the metal-containing precursor contains tungsten, tantalum, or molybdenum.
This invention relates to semiconductor device fabrication, specifically methods for forming conductive structures using metal-containing precursors. The process addresses challenges in depositing high-quality conductive materials, such as tungsten, tantalum, or molybdenum, to enhance electrical performance and reliability in integrated circuits. The method involves depositing a metal-containing precursor onto a substrate, followed by a conversion step to form a conductive metal layer. The precursor may include tungsten, tantalum, or molybdenum, which are selected for their excellent conductivity and compatibility with semiconductor manufacturing. The deposition process ensures uniform coverage and precise control over material properties, reducing defects and improving device yield. The conversion step may involve thermal or plasma treatment to transform the precursor into a stable conductive metal layer. This approach enables the formation of reliable interconnects, contacts, or barrier layers in advanced semiconductor devices, supporting higher performance and scalability in modern electronics. The method is particularly useful for applications requiring low-resistance conductive pathways, such as in transistors, memory cells, or logic circuits.
18. The method for forming a semiconductor device structure as claimed in claim 12 , wherein the metal-containing precursor contains chlorine.
This invention relates to semiconductor device fabrication, specifically a method for forming a semiconductor device structure using a metal-containing precursor that includes chlorine. The method addresses challenges in semiconductor manufacturing, such as achieving precise material deposition and ensuring high-quality film formation for advanced electronic devices. The process involves depositing a metal-containing layer on a substrate, where the precursor used in the deposition contains chlorine. This chlorine-containing precursor enhances the reactivity and uniformity of the deposited material, improving film properties such as adhesion, density, and electrical conductivity. The method is particularly useful in forming metal layers or metal-containing compounds, such as oxides, nitrides, or silicides, which are critical for transistors, interconnects, and other semiconductor components. The deposition process may include chemical vapor deposition (CVD) or atomic layer deposition (ALD), where the chlorine in the precursor facilitates controlled reactions with the substrate or other reactants. This ensures precise thickness and composition of the deposited layer, which is essential for modern semiconductor devices with nanoscale dimensions. The method may also involve additional steps, such as annealing or etching, to refine the material properties and device performance. By incorporating chlorine in the metal-containing precursor, the invention improves deposition efficiency, film quality, and device reliability, addressing key challenges in semiconductor manufacturing. This approach is applicable to various semiconductor technologies, including logic, memory, and power devices.
19. A method for forming a semiconductor device structure, comprising: forming a first metal-containing element over a semiconductor substrate; forming a metal layer on a surface of the first metal-containing element, wherein the metal layer absorbs oxygen from the first metal-containing element and becomes an oxygen-containing layer; providing a metal-containing precursor on the oxygen-containing layer using an atomic layer deposition process to etch the oxygen-containing layer and to continue to selectively form a metal-containing layer on the first metal-containing element, wherein after etching the oxygen-containing layer, the surface originally covered by the oxygen-containing layer is directly exposed to the metal-containing precursor to form the metal-containing layer on the surface; and forming a second metal-containing element on the metal-containing layer.
This invention relates to semiconductor device fabrication, specifically addressing challenges in forming high-quality metal-containing layers on semiconductor substrates. The method involves forming a first metal-containing element over a semiconductor substrate, followed by depositing a metal layer on its surface. The metal layer absorbs oxygen from the first metal-containing element, transforming into an oxygen-containing layer. An atomic layer deposition (ALD) process is then used to introduce a metal-containing precursor, which etches the oxygen-containing layer while selectively forming a metal-containing layer on the first metal-containing element. The etching exposes the original surface, allowing direct interaction with the precursor to form the metal-containing layer. Finally, a second metal-containing element is deposited on the metal-containing layer. This process ensures precise control over layer formation, reducing defects and improving device performance by minimizing oxygen contamination and enhancing interface quality. The method is particularly useful in advanced semiconductor manufacturing where precise material deposition and interface purity are critical.
20. The method for forming a semiconductor device structure as claimed in claim 19 , wherein the metal-containing precursor contains chlorine and is substantially fluorine free.
This invention relates to semiconductor device fabrication, specifically addressing the challenge of forming high-quality semiconductor structures using metal-containing precursors. The method involves depositing a metal-containing layer on a substrate, where the precursor used in the deposition process contains chlorine but is substantially free of fluorine. This composition helps avoid fluorine-related defects while ensuring efficient metal deposition. The process includes introducing the metal-containing precursor into a reaction chamber, where it reacts with the substrate surface to form the desired metal-containing layer. The precursor's chlorine content facilitates controlled deposition, while the absence of fluorine minimizes potential contamination or damage to the semiconductor structure. The method is particularly useful in advanced semiconductor manufacturing, where precise material composition and purity are critical for device performance. By using a chlorine-based, fluorine-free precursor, the technique improves layer uniformity and reduces defects, enhancing the overall reliability and efficiency of semiconductor devices.
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August 8, 2018
January 21, 2020
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