The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge structures with reduced capacitance and methods of manufacture. The structure includes: a plurality of fin structures provided in at least one N+ type region and at least one P+ region; and a plurality of gate structures disposed over the plurality of fin structures and within the at least one N+ type region and one P+ region, the plurality of gate structures being separated in a lengthwise direction between the at least one N+ type region and the least one P+ region.
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1. An electrostatic discharge structure, comprising: a plurality of fin structures provided in at least one N+ type region and at least one P+ region; and a plurality of gate structures disposed over the plurality of fin structures and within the at least one N+ type region and one P+ region, the plurality of gate structures being separated in a lengthwise direction between the at least one N+ type region and the least one P+ region, wherein the at least one N+ type region and at least one P+ region comprise N+ type epitaxial material and P+ type epitaxial material deposited over the plurality of gate structures in the at least one N+ type region and in the at least one P+ region respectively; wherein the plurality of gate structures disposed over the plurality of fin structures comprise a transverse cut which separates them along the lengthwise direction, the transverse cut being located between the N+ type epitaxial material and P+ type epitaxial material and over the shallow trench isolation features, with the ends of the plurality of gate structures being in alignment in each respective region.
2. The structure of claim 1 , wherein the plurality of gate structures are cut transversely to maintain a separation between the gate structures in the lengthwise direction and between at least one N+ type region and the least one P+ type region.
This invention relates to semiconductor device fabrication, specifically to the formation of gate structures in integrated circuits. The problem addressed is ensuring proper electrical isolation between adjacent gate structures and between different doped regions (N+ and P+) in the semiconductor substrate. The solution involves cutting the gate structures transversely to create physical and electrical separation in both the lengthwise direction of the gate and between the N+ and P+ regions. This transverse cutting prevents unwanted electrical conduction paths that could degrade device performance or cause failures. The gate structures are typically part of transistors, and the cutting process ensures that each gate is electrically isolated from others while maintaining precise alignment with the underlying doped regions. The transverse cuts are made after the gate structures are formed, allowing for fine-tuning of the separation distances to meet specific design requirements. This technique is particularly useful in advanced semiconductor nodes where feature sizes are extremely small, and precise control of isolation is critical for reliable device operation. The method ensures that the gate structures do not bridge between N+ and P+ regions, which could otherwise create leakage currents or short circuits. The transverse cutting can be performed using lithography and etching processes, ensuring high precision and reproducibility. The resulting structure maintains the integrity of the gate structures while providing the necessary isolation for proper device functionality.
3. The structure of claim 2 , wherein the plurality of gate structures include multiple gate structures over each of the at least one N+ type region and the at least one P+ type region, wherein ends of the multiple gate structures are aligned and separated from each along the lengthwise direction.
This invention relates to semiconductor device structures, specifically addressing the layout and arrangement of gate structures in integrated circuits. The problem being solved involves optimizing the placement and alignment of gate structures over doped regions to improve device performance and reliability. The invention describes a semiconductor structure with multiple gate structures positioned over both N+ type and P+ type regions. Each gate structure is aligned at its ends and separated from adjacent gate structures along the lengthwise direction. This arrangement ensures precise control over the electrical characteristics of the device, reducing leakage currents and enhancing switching efficiency. The multiple gate structures over each doped region allow for finer tuning of the device's electrical properties, while the aligned and separated ends prevent unwanted interactions between adjacent gates. This configuration is particularly useful in advanced semiconductor manufacturing processes where precise control over gate placement is critical for achieving high-performance transistors. The invention improves upon prior art by providing a more efficient and reliable gate structure layout, leading to better overall device performance.
4. The structure of claim 1 , wherein the fin structures are composed of semiconductor material.
This invention relates to semiconductor fin structures used in integrated circuits, particularly for improving device performance and scalability. The problem addressed is the need for high-performance, scalable semiconductor devices with efficient heat dissipation and electrical conductivity. The invention provides a semiconductor structure with fin structures composed of semiconductor material, which are integrated into a substrate. These fin structures are designed to enhance the surface area for improved charge carrier mobility and thermal management. The semiconductor material used in the fin structures ensures compatibility with existing fabrication processes while offering superior electrical and thermal properties. The fin structures are precisely engineered to optimize device performance, reduce leakage currents, and improve overall efficiency. The invention also includes methods for forming these fin structures, ensuring precise control over dimensions and material composition. The semiconductor fin structures are particularly useful in advanced transistors, such as FinFETs, where high electron mobility and efficient heat dissipation are critical. The use of semiconductor material in the fin structures ensures reliable operation under varying thermal and electrical conditions, making the invention suitable for high-performance computing and low-power applications. The invention provides a scalable solution for next-generation semiconductor devices, addressing the challenges of miniaturization and performance enhancement.
5. The structure of claim 1 , wherein the at least one N+ region is two N+ regions adjacent to the at least one P+ region.
The invention relates to semiconductor devices, specifically to a structure for a semiconductor device that includes a P+ region and at least one N+ region. The problem addressed is improving the performance and efficiency of semiconductor devices by optimizing the arrangement of doped regions. The invention provides a semiconductor structure where the at least one N+ region is configured as two N+ regions positioned adjacent to the P+ region. This arrangement enhances the electrical characteristics of the device, such as reducing resistance and improving charge carrier mobility. The P+ region is heavily doped with acceptor impurities, while the N+ regions are heavily doped with donor impurities. The two N+ regions are placed on either side of the P+ region, forming a symmetrical or asymmetrical configuration depending on the device requirements. This structure can be used in various semiconductor applications, including diodes, transistors, and other electronic components, to improve their electrical properties and overall performance. The invention focuses on the specific arrangement of the N+ and P+ regions to achieve better device functionality.
6. The structure of claim 5 , wherein the two N+ regions and the at least one P+ region are epitaxial material with N+ doping and P+ doping, respectively.
This invention relates to semiconductor structures, specifically to a configuration involving N+ and P+ doped regions formed using epitaxial growth. The problem addressed is the need for precise doping control in semiconductor devices to enhance performance and reliability. The structure includes two N+ regions and at least one P+ region, all formed as epitaxial material. The N+ regions are doped with N-type impurities, while the P+ region is doped with P-type impurities. Epitaxial growth ensures uniform doping profiles and high-quality crystalline structure, which are critical for semiconductor devices like diodes, transistors, or integrated circuits. The N+ and P+ regions are strategically placed to form junctions that enable efficient charge carrier movement, reducing leakage currents and improving device efficiency. The use of epitaxial material for both N+ and P+ regions ensures consistent doping levels and minimizes defects, leading to better electrical characteristics. This configuration is particularly useful in high-performance applications where precise doping control is essential for optimal device operation. The invention improves upon prior art by leveraging epitaxial growth to achieve superior doping uniformity and device reliability.
7. The structure of claim 5 , wherein the separation of the plurality of gate structures in the lengthwise direction between the at least one N+ type region and the least one P+ region disrupts a capacitance pathway.
This invention relates to semiconductor device structures, specifically addressing parasitic capacitance issues in integrated circuits. The technology involves a semiconductor structure with multiple gate structures positioned between at least one N+ type region and at least one P+ type region. The key innovation is the intentional separation of these gate structures in the lengthwise direction, which disrupts the capacitance pathway between the N+ and P+ regions. This separation reduces parasitic capacitance, improving device performance by minimizing unwanted charge storage and coupling effects. The gate structures may be part of a transistor array or memory cell configuration, where precise control over capacitance is critical for high-speed operation and low power consumption. The separation distance and arrangement of the gate structures can be optimized to balance capacitance reduction with other electrical characteristics, such as drive current and leakage. This approach is particularly useful in advanced semiconductor nodes where parasitic effects become more pronounced due to increased device density and smaller feature sizes. The solution enhances the efficiency and reliability of semiconductor devices by mitigating capacitance-related performance degradation.
8. The structure of claim 1 , wherein the at least one P+ region is two P+ regions adjacent to the at least one N+ region.
This invention relates to semiconductor devices, specifically to an improved structure for a semiconductor device that includes a P+ region adjacent to an N+ region. The problem addressed is optimizing the electrical characteristics and performance of semiconductor devices, particularly in terms of conductivity, efficiency, and reliability. The invention provides a semiconductor structure where at least one P+ region is positioned adjacent to at least one N+ region, forming a PN junction. The improvement involves configuring the P+ region as two distinct P+ regions adjacent to the N+ region, enhancing the device's electrical properties. The two P+ regions may be symmetrically or asymmetrically placed relative to the N+ region, depending on the desired electrical behavior. This configuration can improve charge carrier mobility, reduce leakage current, and enhance the overall efficiency of the semiconductor device. The structure is particularly useful in power electronics, where precise control of current flow and voltage handling is critical. The invention may be applied in diodes, transistors, or other semiconductor components where PN junctions are utilized. The two P+ regions can be formed through doping processes, ensuring precise control over their placement and electrical properties. This configuration allows for better optimization of the device's performance in various operating conditions.
9. An electrostatic discharge structure, comprising: a first region of a first dopant type extending over a plurality of fin structures; a second region of a second dopant extending over the plurality of fin structures and adjacent to the first region; a third region of the first dopant type extending over the plurality of fin structures and adjacent to the second region; a first plurality of gate structures in the first region; a second plurality of gate structures in the second region; and a third plurality of gate structures in the third region, wherein the first plurality of gate structures, the second plurality of gate structures and the third plurality of gate structures are separated in a lengthwise direction, and wherein the first dopant type is a first doped epitaxial material deposited over the plurality of fin structures and the first plurality of gate structures in the first region and the third plurality of gate structures in the third region, and wherein the second dopant type is a second doped epitaxial material deposited over the plurality of fin structures and the second plurality of gate structures in the second region; wherein the first, second and third plurality of gate structures are each cut along the lengthwise direction so as to separate from one another each of the first, second and third plurality of gate structures, the cuts are located (i) between the first doped epitaxial material deposited over the first plurality of gate structures in the first region and the second doped epitaxial material deposited over the second plurality of gate structures in the second region and (ii) between the first doped epitaxial material deposited over the third plurality of gate structures in the third region and the second doped epitaxial material deposited over the second plurality of gate structures in the second region, and the cuts are further provided over shallow trench isolation regions which are devoid of the first doped epitaxial material and the second doped epitaxial material.
This invention relates to electrostatic discharge (ESD) protection structures in semiconductor devices, specifically for fin-based transistors. The problem addressed is the need for robust ESD protection in advanced semiconductor technologies where fin field-effect transistors (FinFETs) are used. Traditional ESD protection circuits may not be compatible with fin-based architectures, leading to reliability issues. The disclosed structure includes a series of fin structures with three adjacent regions: a first region doped with a first dopant type, a second region doped with a second dopant type, and a third region doped with the first dopant type. Each region contains multiple gate structures aligned in a lengthwise direction. The first and third regions are formed by depositing a first doped epitaxial material over the fins and gate structures, while the second region uses a second doped epitaxial material. The gate structures are segmented by cuts along the lengthwise direction, separating the gates in each region. These cuts are positioned between the doped epitaxial materials and are located over shallow trench isolation regions, which are free of the epitaxial materials. This segmentation prevents current leakage and improves ESD robustness by isolating the different doped regions. The structure ensures effective ESD protection while maintaining compatibility with fin-based transistor architectures.
10. The structure of claim 9 , wherein the first region and the third region are N+ type regions and the second region is a P+ type region.
This invention relates to semiconductor structures, specifically a doped region configuration for enhancing electrical performance in integrated circuits. The problem addressed is optimizing conductivity and junction properties in semiconductor devices, particularly for applications requiring precise control of charge carrier movement. The structure comprises three adjacent regions: a first region, a second region, and a third region. The first and third regions are heavily doped N-type (N+) regions, while the second region is a heavily doped P-type (P+) region sandwiched between them. This configuration forms a P-N junction between the second region and the first and third regions, creating a diode-like structure. The N+ regions provide high electron concentration, while the P+ region provides high hole concentration, enabling efficient charge carrier movement across the junctions. The N+ and P+ doping levels ensure low resistance paths for electrons and holes, respectively, reducing power loss and improving switching speeds. The arrangement is particularly useful in power electronics, memory cells, or sensor applications where rapid charge transfer and low leakage are critical. The structure may be integrated into transistors, diodes, or other semiconductor devices to enhance performance. The doping concentrations and region dimensions can be adjusted to tailor electrical characteristics for specific applications.
11. The structure of claim 9 , wherein the first region and the third region are P+ type regions and the second region is a N+ type region.
This invention relates to semiconductor device structures, specifically a doped region configuration for improving electrical performance. The problem addressed is optimizing conductivity and junction properties in semiconductor devices, particularly in regions where different doping types interact. The structure includes three adjacent doped regions: a first region, a second region, and a third region. The first and third regions are heavily doped P-type (P+), while the second region is heavily doped N-type (N+). This arrangement creates a P-N-P junction configuration, which can be used in various semiconductor applications such as diodes, transistors, or memory cells. The heavy doping levels (P+ and N+) ensure low resistance and efficient charge carrier movement, enhancing device performance. The specific doping types and their placement allow for controlled current flow and improved junction characteristics, such as reduced leakage current and faster switching speeds. This configuration is particularly useful in integrated circuits where precise doping profiles are critical for optimal electrical behavior. The invention focuses on the structural arrangement of these doped regions to achieve desired electrical properties without relying on additional processing steps or complex geometries.
12. The structure of claim 9 , wherein individual gate structures of the first plurality of gate structures, the second plurality of gate structures and the third plurality of gate structures are each aligned end to end.
This invention relates to semiconductor device structures, specifically a memory device with multiple stacked gate structures. The problem addressed is the need for improved alignment and integration of gate structures in advanced memory devices, such as those used in three-dimensional NAND flash memory, to enhance performance and reliability. The invention describes a semiconductor structure with a first plurality of gate structures, a second plurality of gate structures, and a third plurality of gate structures. These gate structures are arranged in a stacked configuration, where each gate structure in the first, second, and third pluralities is aligned end to end. The gate structures are formed over a substrate and are electrically isolated from each other. The structure also includes a first conductive line electrically connected to the first plurality of gate structures, a second conductive line electrically connected to the second plurality of gate structures, and a third conductive line electrically connected to the third plurality of gate structures. The conductive lines are configured to independently control the gate structures, allowing for selective activation and deactivation of different regions of the memory device. The end-to-end alignment of the gate structures ensures precise control over the memory cells, improving data storage efficiency and reducing errors. This configuration is particularly useful in high-density memory devices where precise alignment and independent control of gate structures are critical for performance.
13. The structure of claim 9 , wherein the separation of the plurality of gate structures in the lengthwise direction disrupts a capacitance pathway.
The invention relates to semiconductor device structures, specifically addressing issues related to parasitic capacitance in integrated circuits. The problem being solved involves unwanted capacitance between adjacent gate structures in a semiconductor device, which can degrade performance by causing signal delays, increased power consumption, or reduced signal integrity. The invention describes a semiconductor structure with a plurality of gate structures arranged in a lengthwise direction. The key improvement is the intentional separation of these gate structures along their length, which disrupts the capacitance pathway between them. This separation reduces or eliminates parasitic capacitance that would otherwise form between adjacent gate structures, improving device performance. The gate structures may be part of a larger semiconductor device, such as a transistor array or memory cell array, where minimizing capacitance is critical for high-speed operation and energy efficiency. The separation can be achieved through physical gaps, insulating materials, or other structural modifications that break the direct capacitance pathway. This approach is particularly useful in densely packed semiconductor designs where gate structures are closely spaced, as it mitigates the adverse effects of proximity-induced capacitance without requiring significant changes to the overall device layout. The invention ensures better electrical isolation between gate structures, leading to more reliable and efficient semiconductor devices.
14. The structure of claim 13 , wherein the capacitance pathway is between the gate structures and two differently doped regions.
The invention relates to semiconductor devices, specifically addressing the challenge of optimizing capacitance pathways in integrated circuits to improve performance and efficiency. The structure includes a semiconductor substrate with multiple gate structures formed thereon, each gate structure controlling the flow of current in an underlying channel region. The structure further includes two differently doped regions adjacent to the gate structures, forming source and drain regions with distinct conductivity types. A capacitance pathway is established between the gate structures and these differently doped regions, enabling controlled charge storage and transfer. This configuration enhances the device's switching speed and reduces power consumption by minimizing parasitic capacitance effects. The differently doped regions may include n-type and p-type regions, creating a junction that influences the capacitance characteristics. The gate structures are electrically isolated from the substrate and interconnected to form a unified control mechanism. The capacitance pathway is designed to optimize the interaction between the gate structures and the doped regions, ensuring efficient charge modulation during device operation. This structure is particularly useful in advanced semiconductor devices where precise control of capacitance is critical for high-speed and low-power applications.
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June 26, 2018
January 21, 2020
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