Embodiments of three-dimensional (3D) memory devices having multiple memory stacks and methods for forming the 3D memory devices are disclosed. In an example, a 3D memory device includes a first device chip, a second device chip, and a bonding interface. The first device chip includes a peripheral device and a first interconnect layer. The second device chip includes a substrate, two memory stacks disposed on opposite sides of the substrate, two memory strings each extending vertically through one of the two memory stacks, and a second interconnect layer. The bonding interface is formed vertically between the first interconnect layer of the first device chip and the second interconnect layer of the second device chip.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A three-dimensional (3D) memory device, comprising: a first device chip, comprising: a peripheral device; and a first interconnect layer; a second device chip, comprising: a substrate; two memory stacks disposed on opposite sides of the substrate; two memory strings each extending vertically through one of the two memory stacks; and a second interconnect layer; and a bonding interface formed vertically between the first interconnect layer of the first device chip and the second interconnect layer of the second device chip.
2. The 3D memory device of claim 1 , wherein the first device chip further comprises a memory stack and a memory string extending vertically through the memory stack.
3. The 3D memory device of claim 2 , wherein the memory stack of the first device chip is disposed beside, below, or above the peripheral device.
4. The 3D memory device of claim 1 , wherein the first interconnect layer comprises a plurality of bonding contacts and bonding dielectrics at the bonding interface.
5. The 3D memory device of claim 1 , wherein each of the two memory stacks of the second device chip comprises a staircase structure tilting toward a center of the memory stack.
6. The 3D memory device of claim 5 , wherein the second device chip further comprises two word line contacts each being in contact with one of the two memory stacks at the respective staircase structure.
7. The 3D memory device of claim 1 , wherein the second interconnect layer comprises a plurality of bonding contacts and bonding dielectrics at the bonding interface.
8. The 3D memory device of claim 2 , wherein the first device chip further comprises a first contact extending vertically through the memory stack of the first device chip.
9. The 3D memory device of claim 8 , wherein the second device chip further comprises a second contact extending vertically through the substrate and the two memory stacks of the second device chip.
10. The 3D memory device of claim 9 , wherein each of the first and second interconnect layers comprises a contact electrically connecting the first contact of the first device chip and the second contact of the second device chip.
11. The 3D memory device of claim 1 , wherein the second device chip further comprises another second interconnect layer disposed on the opposite side of the substrate as the second interconnect layer.
12. The 3D memory device of claim 11 , further comprising: a third device chip, comprising: a memory stack; a memory string extending vertically through the memory stack; and a third interconnect layer; and a second bonding interface formed vertically between the third interconnect layer of the third device chip and the another second interconnect layer of the second device chip.
13. The 3D memory device of claim 12 , further comprising a select line configured to select between the memory string in the third device chip and one of the two memory strings in the second device chip.
14. A three-dimensional (3D) memory device, comprising: a first device chip, comprising: a peripheral device; and a first interconnect layer; a second device chip, comprising: a substrate; a memory stack formed on the substrate and comprising two memory decks disposed one over another; two memory strings each extending vertically through one of the two memory decks; and a second interconnect layer; and a bonding interface formed vertically between the first interconnect layer of the first device chip and the second interconnect layer of the second device chip.
15. The 3D memory device of claim 14 , wherein the second device chip further comprises a common source layer disposed vertically between the two memory decks and electrically connected to the two memory strings of the second device chip.
16. The 3D memory device of claim 15 , wherein the common source layer comprises two conductive layers.
17. The 3D memory device of claim 14 , wherein the second device chip further comprises an inter-deck plug disposed vertically between the two memory decks and electrically connected to the two memory strings of the second device chip.
18. The 3D memory device of claim 17 , wherein the inter-deck plug comprises a semiconductor plug.
19. A method for forming a three-dimensional (3D) memory device, comprising: forming a peripheral device on a first chip substrate; forming a first interconnect layer above the peripheral device on the first chip substrate; forming a first memory stack on a first side of a second chip substrate; forming a first memory string extending vertically through the first memory stack; forming a second memory stack on a second side opposite to the first side of the second chip substrate; forming a second memory string extending vertically through the second memory stack; forming a second interconnect layer above one of the first and second memory stacks; and bonding the first chip substrate and the second chip substrate at a bonding interface between the first interconnect layer and the second interconnect layer.
20. The method of claim 19 , wherein the bonding includes hybrid bonding.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
November 16, 2018
March 24, 2020
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