Device and method for manufacturing the device

1. A method for manufacturing a device, the method comprising: providing a semiconductor substrate having an RF-device integrated in a device region at a first main surface of the semiconductor substrate; providing a BEOL-layer stack on the first main surface of the semiconductor substrate, wherein a second main surface of the BEOL-layer stack is arranged at the first main surface of the semiconductor substrate, wherein the BEOL-layer stack comprises one or more metallization layers embedded in an isolating material; attaching a carrier structure to a first main surface of the BEOL-layer stack; removing all or essentially all semiconductor material of the semiconductor substrate which surrounds the device region, the removing exposing a portion of the second main surface of the BEOL-layer stack which is laterally offset from the device region; and opening a contacting region of the BEOL-layer stack at the exposed portion of the second main surface of the BEOL-layer stack.

2. The method of claim 1 , wherein removing all or essentially all semiconductor material of the semiconductor substrate which surrounds the device region comprises: thinning the semiconductor substrate from a second main surface of the semiconductor substrate opposite the first main surface of the semiconductor substrate; and after the thinning, removing a lateral portion of the semiconductor substrate which laterally adjoins the device region.

3. The method of claim 2 , wherein the thinning is performed up to a target depth of 10 μm to 100 μm or 5 μm to 250 μm.

4. The method of claim 1 , wherein the contacting region of the BEOL-layer stack is opened up to an etch stop structure, and wherein at least one of a metallization layer of the BEOL-layer stack and a metal contact of the BEOL-layer stack forms the etch stop structure.

5. The method of claim 1 , wherein the BEOL-layer stack comprises one or more metal contacts which are connected to the one or more metallization layers, wherein at least one of the metal contacts forms the contacting region of the BEOL-layer stack, wherein the one or more metal contacts are buried under the second main surface of the BEOL-layer stack, and wherein the one or more metal contacts comprise wolfram.

6. The method of claim 5 , wherein the BEOL-layer stack is formed such that the RF-device is electrically connected to at least one of the one or more metallization layers.

7. The method of claim 1 , further comprising: forming a contact element at the exposed contacting region of the BEOL-layer stack, the contact element comprising a metal pillar or a solder ball.

8. The method of claim 1 , wherein attaching the carrier structure to the first main surface of the BEOL-layer stack comprises permanently attaching the carrier structure to the BEOL-layer stack.

9. The method of claim 1 , further comprising: forming an isolator layer on the exposed portion of the second main surface of the BEOL-layer stack.

10. The method of claim 9 , wherein opening the contacting region of the BEOL-layer stack comprises partially removing the isolator layer at the contacting region of the BEOL-layer stack.

11. The method of claim 2 , wherein removing the lateral portion of the semiconductor substrate which laterally adjoins the device region comprises etching the lateral portion of the semiconductor substrate.

12. The method of claim 1 , further comprising: packaging the device by covering at least a part of the exposed portion of the second main surface of the BEOL-layer stack with a mold material.

13. The method of claim 1 , wherein the semiconductor substrate comprises at least one of a further RF-device and an electrical device integrated in a further device region at the first main surface of the semiconductor substrate, the further device region being laterally spaced apart from the device region.

14. The method of claim 13 , wherein the BEOL-layer stack is provided on the first main surface of the semiconductor substrate such that the RF-device is electrically connected to at least one of the further RF-device and the electrical device.

15. The method of claim 13 , wherein removing all or essentially all semiconductor material of the semiconductor substrate which surrounds the device region comprises, after thinning the semiconductor substrate from a second main surface of the semiconductor substrate opposite the first main surface of the semiconductor substrate, removing a lateral portion of the semiconductor substrate which laterally adjoins the device region, and wherein removing the lateral portion of the semiconductor substrate comprises removing the lateral portion of the semiconductor substrate which laterally adjoins the device region and the further device region of the semiconductor substrate to expose a lateral portion of the second main surface of the BEOL-layer stack, wherein a recess is formed between the device region and the further device region.

16. The method of claim 13 , further comprising: packaging the device by covering at least a part of the exposed portion of the second main surface of the BEOL-layer stack with a mold material, wherein during the packaging of the device, the recess is at least partially filled with the mold material.

17. The method of claim 1 , wherein the RF-device is a bulk silicon RF-device.