Via-hole connection structure and method of manufacturing the same, and array substrate and method of manufacturing the same

1. A method of manufacturing a via-hole connection structure, comprising the following steps of: forming a first conductive layer on a substrate, and patterning the first conductive layer to form a first conductive pattern on which a first photoresist pattern is provided, the first conductive layer being patterned, by adopting the first photoresist pattern as a mask, to form the first conductive pattern; forming a first insulation layer covering the first conductive layer and the first photoresist pattern; patterning the first insulation layer to form a first via-hole from which at least a portion of the first photoresist pattern is exposed; removing the at least a portion of the first photoresist pattern exposed from the first via-hole; and forming a second conductive pattern, wherein the second conductive pattern is electrically connected to the first conductive pattern through the first via-hole.

2. The method of claim 1 , wherein, the step of patterning the first conductive layer to form a first conductive pattern on which a first photoresist pattern is provided comprising: forming a first photoresist layer over the first conductive layer; exposing and developing, with a mask, the first photoresist layer to form the first photoresist pattern; and etching off a portion of the first conductive layer not being covered by the first photoresist pattern, to form the first conductive pattern being covered by the first photoresist pattern; wherein, the first conductive pattern and the first photoresist pattern have the same profile.

3. The method of claim 1 , wherein the method further comprises, after the step of forming the first insulation layer and before the step of removing the at least a portion of the first photoresist pattern exposed from the first via-hole, further comprising: forming a third conductive pattern and a second insulation layer on the first insulation layer in sequence; and patterning the second insulation layer, so as to form the first via-hole running through the first insulation layer and the second insulation layer and a second via-hole running through the second insulation layer, wherein, at least a portion of the first photoresist pattern is exposed from the first via-hole, at least a portion of the third conductive pattern is exposed from the second via-hole, and an orthographic projection of the third conductive pattern onto the substrate is not overlapped with an orthographic projection of the first via-hole onto the substrate; and wherein, the step of forming a second conductive pattern further comprises: connecting the second conductive pattern to the first conductive pattern and the third conductive pattern through the first via-hole and the second via-hole, respectively.

4. The method of claim 1 , wherein, the step of patterning the first insulation layer comprises: forming a second photoresist layer over the first insulation layer; exposing and developing the second photoresist layer to form a second photoresist pattern; and etching off a portion of the first insulation layer not being covered by the second photoresist pattern, so as to form the first via-hole; wherein, the second photoresist pattern is removed while removing the at least a portion of the first photoresist pattern exposed from the first via-hole.

5. The method of claim 3 , wherein, the step of patterning the second insulation layer comprises: forming a third photoresist layer over the second insulation layer; exposing and developing the third photoresist layer so as to form a third photoresist pattern; and etching off a portion of the second insulation layer not being covered by the third photoresist pattern, to form the first via-hole and the second via-hole; wherein, the third photoresist pattern is removed while removing the at least a portion of the first photoresist pattern exposed from the first via-hole.

6. A method of manufacturing an array substrate, wherein, the array substrate comprises a display region and a peripheral region around the display region, and a via-hole connection structure is within a fan-out area in the peripheral region of the array substrate; and the method comprises: manufacturing the via-hole connection structure by using the method of claim 1 .

7. The method of claim 6 , wherein, the first conductive pattern at least comprises a first fan-out line made of the same material as and formed by the same patterning process simultaneously as a gate line in the display region and a gate electrode of a thin film transistor in the display region.

8. The method of claim 6 , wherein, the second conductive pattern at least comprises a second fan-out line made of the same material as and formed by the same patterning process simultaneously as a pixel electrode or a common electrode in the display region.

9. A method of manufacturing an array substrate, wherein, the array substrate comprises a display region and a peripheral region around the display region, and a via-hole connection structure is within a fan-out area in the peripheral region of the array substrate; and the method comprises: manufacturing the via-hole connection structure by using the method of claim 3 .

10. The method of claim 9 , wherein, the third conductive pattern is made of the same material as and is formed by the same patterning process simultaneously as a source electrode and a drain electrode of a thin film transistor in the display region.

11. The method of claim 10 , wherein, the second conductive pattern is made of the same material as and is formed by the same patterning process simultaneously as a pixel electrode or a common electrode in the display region; a third via-hole is formed while forming the first via-hole and the second via-hole, the third via-hole runs through the second insulation layer and exposes at least a portion of the source electrode or the drain electrode, and the pixel electrode is electrically connected to the at least a portion of the source electrode or the drain electrode through the third via-hole.

12. A method of manufacturing a via-hole connection structure, comprising the following steps of: forming a first conductive layer on a substrate, and patterning the first conductive layer to form a first conductive pattern on which a half-tone photoresist pattern is provided, the first conductive layer being patterned, by adopting the half-tone photoresist pattern as a mask, to form the first conductive pattern; ashing the half-tone photoresist pattern, so as to form a first photoresist pattern covering at least a portion of the first conductive pattern; forming a first insulation layer covering the first conductive layer and the first photoresist pattern; patterning the first insulation layer to form a first via-hole from which at least a portion of the first photoresist pattern is exposed; removing the at least a portion of the first photoresist pattern exposed from the first via-hole; and forming a second conductive pattern, wherein the second conductive pattern is electrically connected to the first conductive pattern through the first via-hole.

13. The method of claim 12 , wherein, the step of patterning the first conductive layer to form a first conductive pattern on which a first photoresist pattern is provided comprising: forming a first photoresist layer over the first conductive layer; exposing and developing, with a half-tone mask, the first photoresist layer to form a half-tone photoresist pattern; and etching off a portion of the first conductive layer not being covered by the half-tone photoresist pattern, to form the first conductive pattern being covered by the half-tone photoresist pattern; wherein, the first conductive pattern and the first photoresist pattern have different profiles, and a half-tone area of the half-tone mask at least corresponds to a portion of the first conductive pattern not being covered by the first photoresist pattern.

14. The method of claim 12 , wherein the method further comprises, after the step of forming the first insulation layer and before the step of removing the at least a portion of the first photoresist pattern exposed from the first via-hole, further comprising: forming a third conductive pattern and a second insulation layer on the first insulation layer in sequence; and patterning the second insulation layer, so as to form the first via-hole running through the first insulation layer and the second insulation layer and a second via-hole running through the second insulation layer, wherein, at least a portion of the first photoresist pattern is exposed from the first via-hole, at least a portion of the third conductive pattern is exposed from the second via-hole, and an orthographic projection of the third conductive pattern onto the substrate is not overlapped with an orthographic projection of the first via-hole onto the substrate; and wherein, the step of forming a second conductive pattern further comprises: connecting the second conductive pattern to the first conductive pattern and the third conductive pattern through the first via-hole and the second via-hole, respectively.

15. The method of claim 12 , wherein, the step of patterning the first insulation layer comprises: forming a second photoresist layer over the first insulation layer; exposing and developing the second photoresist layer to form a second photoresist pattern; and etching off a portion of the first insulation layer not being covered by the second photoresist pattern, so as to form the first via-hole; wherein, the second photoresist pattern is removed while removing the at least a portion of the first photoresist pattern exposed from the first via-hole.

16. The method of claim 12 , wherein, the step of patterning the second insulation layer comprises: forming a third photoresist layer over the second insulation layer; exposing and developing the third photoresist layer so as to form a third photoresist pattern; and etching off a portion of the second insulation layer not being covered by the third photoresist pattern, to form the first via-hole and the second via-hole; wherein, the third photoresist pattern is removed while removing the at least a portion of the first photoresist pattern exposed from the first via-hole.