A method for manufacturing an array substrate, a display panel and a display device are provided. The method includes forming a semiconductor layer, a gate insulating layer, a gate and an inter-layer insulator successively on a base substrate; forming via holes in the inter-layer insulator so as to expose portions of the semiconductor layer; performing plasma bombardment to the portions of the semiconductor layer exposed in the via holes; forming a source electrode and a drain electrode coupled with the semiconductor layer through the via holes respectively on the inter-layer insulator.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for manufacturing an array substrate, comprising: forming a semiconductor layer, a gate insulating layer, a gate and an inter-layer insulator successively on a base substrate; forming via holes in the inter-layer insulator so as to expose portions of the semiconductor layer; performing helium plasma bombardment to the portions of the semiconductor layer exposed in the via holes for 30 to 40 seconds; forming a source electrode and a drain electrode coupled with the semiconductor layer through the via holes respectively on the inter-layer insulator, wherein a material of the semiconductor layer comprises amorphous InGaZnO, and an oxygen content of the amorphous InGaZnO is not greater than 10%.
2. The method according to claim 1 , wherein a flux of the helium plasma bombardment is in negative correlation with a contact resistance, wherein the contact resistance is a resistance generated by contact of the source electrode or the drain electrode with the semiconductor layer.
3. The method according to claim 1 , wherein an intensity of the helium plasma bombardment is in negative correlation with a contact resistance, wherein the contact resistance is a resistance generated by contact of the source electrode or the drain electrode with the semiconductor layer.
4. The method according to claim 1 , wherein forming via holes in the inter-layer insulator comprises: performing dry etching to the inter-layer insulator by carbon tetrafluoride and oxygen.
5. The method according to claim 1 , wherein a thickness of the inter-layer insulator formed is greater than or equal to about 100 nanometers and less than or equal to about 500 nanometers.
6. The method according to claim 1 , wherein, after forming the gate and before forming the inter-layer insulator, the method further comprises: forming a source region and a drain region in regions of the semiconductor layer that are not covered, the source region and the drain region receiving an external electric signal through the source electrode and the drain electrode respectively.
7. The method according to claim 1 , wherein, before forming the semiconductor layer, the method further comprises forming a light shielding layer on the base substrate.
8. The method according to claim 7 , wherein, before forming the semiconductor layer and after forming the light shielding layer, the method further comprises forming a buffer layer on the light shielding layer.
9. The method according to claim 1 , wherein, after forming the source electrode and the drain electrode, the method further comprises forming a passivation layer on the source electrode and the drain electrode.
10. A display panel, comprising an array substrate manufactured by the method as claimed in claim 1 .
11. A display device, comprising the display panel as claimed in claim 10 .
12. The display panel according to claim 10 , wherein a time of the helium plasma bombardment is in negative correlation with a contact resistance, wherein the contact resistance is a resistance generated by contact of the source electrode or the drain electrode with the semiconductor layer.
13. The display panel according to claim 10 , wherein the oxygen content of the amorphous InGaZnO is in negative correlation with a contact resistance, wherein the contact resistance is a resistance generated by contact of the source electrode or the drain electrode with the semiconductor layer.
14. The display panel according to claim 10 , wherein a flux of the helium plasma bombardment is in negative correlation with a contact resistance, wherein the contact resistance is a resistance generated by contact of the source electrode or the drain electrode with the semiconductor layer.
15. The display panel according to claim 10 , wherein an intensity of the helium plasma bombardment is in negative correlation with a contact resistance, wherein the contact resistance is a resistance generated by contact of the source electrode or the drain electrode with the semiconductor layer.
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August 10, 2017
May 5, 2020
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