Wavelength-converting film and semiconductor light emitting apparatus having the same

1. A wavelength-converting film, comprising: a sintered body including a glass composition, and a wavelength-converting material located within the glass composition, the wavelength-converting material including a quantum dot having a core-shell structure and a protective layer coating a surface of the quantum dot, wherein a shell of the quantum dot contains at least one of S and Se, and the protective layer does not contain S or Se, and the glass composition includes a SnO 2 —P 2 O 5 —SiO 2 -based composition, and wherein the protective layer is configured to prevent direct contact between a Sn component of the glass composition and a S or Se component of the shell.

2. The wavelength-converting film of claim 1 , wherein the glass composition includes SnO 2 in an amount of 25 to 95 wt %, P 2 O 5 in an amount of 5 to 70 wt %, and SiO 2 in an amount of 1 to 30 wt %, based on a total weight of the glass composition.

3. The wavelength-converting film of claim 2 , wherein the glass composition includes at least one selected from the group consisting of Na 2 O, MgO, Al 2 O 3 , CaO, K 2 O, and Li 2 O, in an amount of 10 wt % or less.

4. The wavelength-converting film of claim 1 , wherein a transition temperature (Tg) of the glass composition is in a range of 100° C. to 300° C.

5. The wavelength-converting film of claim 1 , wherein a molding temperature (Tw) of the glass composition is in a range of 150° C. to 400° C.

6. The wavelength-converting film of claim 1 , wherein the protective layer of the quantum dot is poly(ethylene-co-acrylic acid) or poly(methyl methacrylate) (PMMA).

7. The wavelength-converting film of claim 1 , wherein the protective layer of the quantum dot is an oxide or a nitride selected from the group consisting of SiO 2 , Al 2 O 3 , ZnO, SiO x N y , and Si 3 N 4 .

8. The wavelength-converting film of claim 1 , wherein the quantum dot is one selected from the group consisting of InP/ZnS, InP/ZnSe, CdSe/CdS, CdSe/ZnS, PbS/ZnS, and InP/GaP/ZnS.

9. The wavelength-converting film of claim 8 , wherein the quantum dot is a green quantum dot or a red quantum dot.

10. The wavelength-converting film of claim 8 , wherein a diameter of the quantum dot is in a range of 5 nm to 20 nm.

11. The wavelength-converting film of claim 8 , further comprising: a red ceramic fluorescent substance, wherein the quantum dot is a green quantum dot.

12. The wavelength-converting film of claim 11 , wherein the red ceramic fluorescent substance includes a fluoride fluorescent substance represented by a composition formula A x MF y :Mn 4+ , in which A is at least one selected from Li, Na, K, Rb, and Cs, M is at least one selected from Si, Ti, Zr, Hf, Ge, and Sn, and the composition formula satisfies 2≤x≤3 and 4≤y≤7.

13. The wavelength-converting film of claim 8 , wherein the wavelength-converting film has a sheet shape or a plate shape.

14. A semiconductor light emitting device, comprising: first and second electrode structures; a semiconductor light-emitting diode chip electrically connected to the first and second electrode structures and emitting first light having a peak wavelength in a range of 440 nm to 460 nm; and a wavelength-converting film along a path of light generated in the semiconductor light-emitting diode chip and claimed in claim 1 , wherein the wavelength-converting film converts the first light into second light having a different peak wavelength from that of the first light.

15. A semiconductor light emitting device, comprising: first and second electrode structures; a semiconductor light-emitting diode chip electrically connected to the first and second electrode structures and emitting first light having a peak wavelength in a range of 440 nm to 460 nm; and a wavelength-converting film along a path of light generated in the semiconductor light-emitting diode chip and including a sintered body including a mixture of a wavelength-converting material configured to convert first light into second light having a different wavelength and a glass composition, wherein the wavelength-converting material includes a quantum dot having a core-shell structure and a protective layer coating a surface of the quantum dot, a shell of the quantum dot contains at least one of S and Se, and the protective layer does not contain S or Se, and the glass composition includes a SnO 2 —P 2 O 5 —SiO 2 -based composition, and wherein the protective layer is configured to prevent direct contact between a Sn component of the glass composition and a S or Se component of the shell.

16. The semiconductor light emitting device of claim 15 , wherein the quantum dot is one selected from the group consisting of InP/ZnS, InP/ZnSe, CdSe/CdS, CdSe/ZnS, PbS/ZnS, and InP/GaP/ZnS.

17. The semiconductor light emitting device of claim 15 , wherein the protective layer of the quantum dot is poly(ethylene-co-acrylic acid) or poly(methyl methacrylate) (PMMA).

18. The semiconductor light emitting device of claim 15 , wherein the protective layer of the quantum dot is an oxide or a nitride selected from the group consisting of SiO 2 , Al 2 O 3 , ZnO, SiO x N y , and Si 3 N 4 .

19. The semiconductor light emitting device of claim 15 , wherein the quantum dot includes a green quantum dot and a red quantum dot.

20. The semiconductor light emitting device of claim 19 , wherein the quantum dot includes a green quantum dot, and the wavelength-converting film further includes a red ceramic fluorescent substance.