Elemental or compound semiconductors on metal substrates and methods of growing them are provided. The methods can include the steps of: (i) providing a metal substrate; (ii) adding an interlayer on a surface of the metal substrate, and (iii) growing semiconductor nanowires on the interlayer using a semiconductor epitaxy growth system to form the elemental or compound semiconductor. The method can include direct growth of high quality group III-V and group III-N based materials in the form of nanowires and nanowires-based devices on metal substrates. The nanowires on all-metal scheme greatly simplifies the fabrication process of nanowires based high power light emitters.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of growing an elemental or compound semiconductor on a metal substrate comprising the steps of: providing a metal substrate; adding a metal interlayer directly on a surface of the metal substrate; and growing semiconductor nanowires on the metal interlayer using a semiconductor epitaxy growth system to form the elemental or compound semiconductor, wherein the step of growing semiconductor nanowires forms an entirely nitride layer directly on the metal interlayer, and forms the semiconductor nanowires directly on the entirely nitride layer so that the semiconductor nanowires are not in direct contact with the metal interlayer.
2. The method of claim 1 , wherein the metal substrate is a thermally and electrically conductive metal, which is one of Mo, Ta, or W.
3. The method in claim 1 , wherein the metal interlayer is comprised of a metal, which is one of Ti, TiN, TaN, HfN, TiAlN.
4. The method of claim 1 , further comprising: forming plural quantum disks within the semiconductor nanowires.
5. The method of claim 1 , wherein the compound semiconductor includes a III-V compound semiconductor comprising one of GaAs, InP, GaSb, and their related ternary and quaternary compounds, including AlGaAs, InGaP, InGaAs, or InGaAsP.
6. The method of claim 1 , wherein the compound semiconductor is a III-N compound semiconductor comprising one of preferably GaN, AlN, InN, InGaN, AlGaN, and their related binary, ternary, and quaternary compound semiconductors.
7. The method in claim 2 , the metal substrate is a bulk metal substrate or a metal foil.
8. The method in claim 3 , the metal interlayer is deposited on the surface of the metal substrate using a thin film deposition technique, which is one of chemical vapor deposition (CVD), atomic layer deposition (ALD), a sputtering coating technique, pulsed laser deposition (PLD), thermal evaporation, and e-beam evaporation.
9. The method of claim 1 , wherein the elemental or compound semiconductor is an all-metal structure.
10. The method of claim 1 , wherein the elemental semiconductor includes a silicon or germanium, and/or Si—Ge compound.
11. A semiconductor device, comprising: a metal substrate; a metal interlayer arranged directly on the metal substrate; an entirely nitride layer arranged directly on the metal interlayer; and semiconductor nanowires arranged directly on the entirely nitride layer, but the semiconductor nanowires are not in direct contact with the metal interlayer.
12. The semiconductor device of claim 11 , wherein the device is an optoelectronic or a photonic device.
13. The semiconductor device of claim 11 , wherein the device is a high electron mobility transistor (HEMT), a heterojunction bipolar transistor (HBT), or a field effect transistor (FET).
14. The semiconductor device of claim 11 , further comprising plural quantum disks formed within the semiconductor nanowires.
15. A method of forming a semiconductor device, the method comprising: forming a metal interlayer directly on a metal substrate; and forming an entirely nitride layer directly on the metal interlayer by forming semiconductor nanowires on the metal interlayer, wherein the semiconductor device comprises the semiconductor nanowires formed directly on the entirely nitride layer and the semiconductor nanowires are not in direct contact with the metal interlayer.
16. The method of claim 15 , further comprising: forming plural quantum disks within the semiconductor nanowires.
17. The method of claim 15 , further comprising: controlling density and size of the semiconductor nanowires by selecting a thickness of the metal interlayer.
18. The method of claim 15 , further comprising: controlling a density of the semiconductor nanowires by controlling a growth temperature of the semiconductor nanowires.
19. The method of claim 15 , wherein the metal interlayer comprises titanium, the entirely nitride layer comprises titanium nitride, and the semiconductor nanowires comprise a group Ill nitride.
20. The method of claim 15 , wherein the metal interlayer is formed on the metal substrate by chemical vapor deposition (CVD), atomic layer deposition (ALD), a sputtering coating technique, pulsed laser deposition (PLD), thermal evaporation, or an e-beam evaporation.
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October 7, 2016
May 26, 2020
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