Image sensor

1. An image sensor comprising: a semiconductor substrate having a first surface and a second surface facing each other; and a first device isolation layer which is provided in the semiconductor substrate to define pixel regions of the semiconductor substrate, and comprises a first portion extending in a first direction and a second portion extending in a second direction, the first direction and the second direction crossing each other, wherein the first portion and the second portion are provided to surround the pixel regions, respectively, the first portion comprises a structure inclined relative to the first surface, the structure comprising: two first sidewalls which penetrate the semiconductor substrate from the first surface to the second surface, and an insulation material disposed at least in a space formed by the two first sidewalls, the first surface, and the second surface, wherein each of the two first sidewalls is slanted in a same direction and inclined toward the first surface, a first angle is formed between the first surface and one first sidewall among the two first sidewalls, by an inclination of the one first sidewall toward the first surface, a second angle is formed between the first surface and another first sidewall among the two first sidewalls, by an inclination of the another first sidewall toward the first surface, the first angle is different from the second angle, and each of the first angle and the second angle is less than 90°.

2. The image sensor of claim 1 , wherein, when viewed in a sectional view taken in the second direction, an extension direction of a virtual line passing through a center of a bottom surface and a center of a top surface of the first portion is inclined to a direction that is normal to the first surface of the semiconductor substrate.

3. The image sensor of claim 2 , wherein, when viewed in the sectional view taken in the second direction, the virtual line is inclined toward the first surface with an angle from about 70° to about 89°.

4. The image sensor of claim 1 , further comprising a photoelectric conversion region provided in each of the pixel regions, wherein the semiconductor substrate has a first conductivity type, and the photoelectric conversion region of each of the pixel regions has a second conductivity type different from the first conductivity type.

5. The image sensor of claim 1 , wherein the second portion extends from the first surface toward the second surface in a direction that is substantially normal to the first surface.

6. The image sensor of claim 1 , further comprising: a second device isolation layer provided in the semiconductor substrate and adjacent to the first surface, the second device isolation layer defining a first active pattern and a second active pattern in each of the pixel regions; a transfer transistor provided on the first active pattern; and a logic transistor provided on the second active pattern.

7. The image sensor of claim 1 , further comprising: color filters provided on the second surface of the semiconductor substrate; and micro lenses provided on, the color filters.

8. An image sensor comprising: a semiconductor substrate having a first surface and a second surface opposing one another and pixel regions formed between the first surface and the second surface; and a first device isolation layer which extends in the semiconductor substrate between the first surface and the second surface and defines the pixel regions by surrounding each of the pixel regions, the first device isolation layer having a portion comprising a structure inclined toward the first surface, the structure comprising: two first sidewalls which penetrate the semiconductor substrate from the first surface to the second surface, and an insulation material disposed at least in a space formed by the two first sidewalls, the first surface, and the second surface, wherein each of the two first sidewalls is slanted in a same direction and inclined toward the first surface, a first angle is formed between the first surface and one first sidewall among the two first sidewalls, by an inclination of the one first sidewall toward the first surface, a second angle is formed between the first surface and another first sidewall among the two first sidewalls, by an inclination of the another first sidewall toward the first surface, the first angle is different from the second angle, and each of the first angle and the second angle is less than 90°.

9. The image sensor of claim 8 , wherein the semiconductor substrate has a central axis extending through a central portion of the semiconductor substrate between the first surface and the second surface, and the portion of the first device isolation layer extends from the first surface in an outward direction with respect to the central axis.

10. The image sensor of claim 9 , wherein the portion of the first device isolation layer has a top cross-section at the first surface and a bottom cross-section at the second surface, and a center of the top cross-section is disposed closer to the central axis than a center of the bottom cross-section.

11. The image sensor of claim 10 , wherein a virtual line through the center of the top cross-section and the center of the bottom cross-section is inclined toward the first surface, and an angle between the virtual line and the first surface is from about 70° to about 89°.

12. The image sensor of claim 8 , wherein the portion of the first device isolation layer extends on the first surface in a first direction, the first device isolation layer includes another portion which extends on the first surface in a second direction which crosses the first direction, and the portion and the another portion together form a boundary surrounding an outer region of each of the pixel regions, respectively.

13. The image sensor of claim 1 , wherein the second portion comprises two second sidewalls which penetrate the semiconductor substrate from the first surface to the second surface and the insulation material disposed at least in a space formed by the two second sidewalls, the first surface, and the second surface, and the two second sidewalls are slanted toward each other and inclined toward the first surface with an angle of inclination, respectively, with respect to the first surface.

14. The image sensor of claim 13 , wherein the angle of inclination between each of the two second sidewalls and the first surface is less than 90°, respectively.

15. The image sensor of claim 1 , wherein a width of the structure gradually decreases from the first surface to the second surface, and a geometry of a cross-section of the structure in a direction along the first surface is changed in a direction toward the second surface due to a difference in the inclination between the two first sidewalls with respect to the first surface.

16. The image sensor of claim 1 , wherein the insulation material comprises silicon.

17. An image sensor comprising: a semiconductor substrate having a first surface and a second surface facing each other; and a first device isolation layer which is provided in the semiconductor substrate to define pixel regions of the semiconductor substrate, and comprises a first portion extending in a first direction and a second portion extending in a second direction, the first direction and the second direction crossing each other, wherein the first portion and the second portion are provided to surround the pixel regions, respectively, the first portion is inclined relative to the first surface, the first portion has two opposite sidewalls which penetrate the semiconductor substrate from the first surface to the second surface, each of the two opposite sidewalls is slanted in a same direction and inclined toward the first surface, a first angle is formed between the first surface and a first sidewall of the two opposite sidewalls, by an inclination of the first sidewall toward the first surface, a second angle is formed between the first surface and a second sidewall of the two opposite sidewalls, by an inclination of the second sidewall toward the first surface, and the first angle is different from the second angle.

18. The image sensor of claim 17 , wherein each of the first angle and the second angle is less than 90°.

19. The image sensor of claim 17 , wherein a width of the first portion gradually changes from the first surface to the second surface, and a geometry of a cross-section of the first portion in a direction along the first surface is changed in a direction toward the second surface due to a difference in the inclination between the two opposite sidewalls with respect to the first surface.