Voltage charge pump with segmented boost capacitors

1. A voltage charge pump circuit comprising: a plurality of boost capacitor segments each of which is individually controlled by a respective signal line of a boost delay structure, wherein a plurality of signal lines of the boost delay structure comprise a pair of inverters in series with a single input and a NAND gate in series with an inverter for corresponding boost capacitor segments.

2. The voltage charge pump circuit of claim 1 , wherein the boost delay structure is structured to allow individual boost timing control of each of the boost capacitor segments during a boost phase.

3. The voltage charge pump circuit of claim 2 , wherein the respective signal line for each of the plurality of boost capacitor segments of the boost delay structure provides a delayed input boost signal to a respective boost capacitor segment of the plurality of boost capacitor segments.

4. The voltage charge pump circuit of claim 3 , wherein the pair of inverters provide the delayed input boost signal to a subsequent boost capacitor segment of the plurality of boost capacitor segments.

5. The voltage charge pump circuit of claim 4 , wherein the delayed input boost signal fires each boost capacitor segment at a different time.

6. The voltage charge pump circuit of claim 4 , wherein the pair of inverters are connected in series between the respective signal line for each of the plurality of boost capacitor segments and the delayed input boost signal to the subsequent boost capacitor segment of the plurality of boost capacitor segments.

7. The voltage charge pump circuit of claim 2 , wherein each boost capacitor segment includes a boost transistor configured to be used as a capacitor, driven by boost drive transistors.

8. The voltage charge pump circuit of claim 1 , further comprising enable signals for enabling each individual signal line of the plurality of signal lines such that, upon activation of an enable signal, a respective one of the plurality of boost capacitor segments are individually controlled, and the plurality of boost capacitor segments are driven separately to limit over voltage of a boosted node.

9. The voltage charge pump circuit of claim 1 , wherein timing control of the plurality of boost capacitor segments are coordinated with digital delays, boost charge of the plurality of boost capacitor segments are distributed over time to control pump output current, and each of the plurality of boost capacitor segments further comprise a boost drive transistor.

10. The voltage charge pump circuit of claim 9 , wherein the boost drive transistor is a NFET.

11. The voltage charge pump circuit of claim 1 , wherein the NAND gate includes a first input which is electrically connected to the single input of the pair of inverters.

12. The voltage charge pump circuit of claim 1 , wherein the NAND gate includes a second input which is electrically connected to an enable signal, and the enable signal is activated using a load sensing comparator.

13. The voltage charge pump circuit of claim 12 , wherein a corresponding boost capacitor segment of the boost capacitor segments is activated in response to activation of the enable signal.

14. The voltage charge pump circuit of claim 1 , wherein a boost capacitor segment, which corresponds with a first signal line of the boost delay structure, is disabled in response to preventing activation of an enable signal of the boost capacitor segment, and the corresponding boost capacitor segments, which correspond with the signal lines, are fired in response to activation of the enable signal of the corresponding boost capacitor segments.

15. The voltage charge pump circuit of claim 1 , wherein each of the boost capacitor segments are individually controlled by an enable signal to adjust an output current during different modes.

16. The voltage charge pump circuit of claim 15 , wherein the output current is adjusted to prevent any excessive ripple in proportion to a load current output from a voltage pump of the voltage charge pump circuit.