An electrostatic chuck assembly for processing a semiconductor substrate is provided. The electrostatic chuck assembly includes a first layer, a baseplate, a second layer, and at least one annular gasket. The first layer includes ceramic material and a first radio frequency (RF) electrode. The first RF electrode is embedded in the ceramic material. The second layer is disposed between the first layer and the baseplate. The at least one annular gasket extends along an upper surface of the baseplate and through the second layer. The at least one annular gasket electrically couples the upper surface of the baseplate to the first RF electrode. RF power passes from the baseplate to the first RF electrode through the at least one annular gasket.
Legal claims defining the scope of protection, as filed with the USPTO.
1. An electrostatic chuck assembly for processing a semiconductor substrate, the electrostatic chuck assembly comprising: a first layer comprising ceramic material and a first radio frequency (RF) electrode, wherein the first RF electrode is embedded in the ceramic material; a baseplate; a second layer disposed between the first layer and the baseplate; and at least one annular gasket extending along an upper surface of the baseplate and through the second layer, wherein the at least one annular gasket electrically couples the upper surface of the baseplate to the first RF electrode, and wherein RF power is provided from the baseplate to the first RF electrode through the at least one annular gasket.
2. The electrostatic chuck assembly of claim 1 , wherein the first layer comprises an electrostatic clamping electrode configured to electrostatically clamp the semiconductor substrate to a top surface of the first layer.
3. The electrostatic chuck assembly of claim 2 , wherein the electrostatic clamping electrode is disposed above the first RF electrode.
4. The electrostatic chuck assembly of claim 2 , wherein the electrostatic clamping electrode is embedded in the ceramic material.
5. The electrostatic chuck assembly of claim 1 , wherein the second layer is a bond layer that bonds the first layer to the baseplate.
6. The electrostatic chuck assembly of claim 1 , wherein: the at least one annular gasket comprises a first gasket and a second gasket; and the first gasket is disposed radially inward of the second gasket.
7. The electrostatic chuck assembly of claim 6 , wherein: the first gasket and the second gasket are electrically conductive; the second gasket passes the RF power from the baseplate to the first RF electrode; and the first gasket passes other RF power from the baseplate to a second RF electrode.
8. The electrostatic chuck assembly of claim 1 , wherein: the first layer includes a stepped portion; and the stepped portion extends along a circumference of the first layer.
9. The electrostatic chuck assembly of claim 8 , further comprising a second RF electrode, wherein: the at least one annular gasket includes a first annular gasket and a second annular gasket; the first RF electrode is electrically coupled to the upper surface of the baseplate by the first annular gasket; and the second RF electrode is disposed underneath the stepped portion and is electrically coupled to the upper surface of the baseplate by the second annular gasket.
10. The electrostatic chuck assembly of claim 9 , further comprising a first plurality of vias and a second plurality of vias, wherein: the first RF electrode is electrically coupled to the upper surface of the baseplate by the first plurality of vias; and the second plurality of vias electrically couple the second RF electrode to the first RF electrode.
11. The electrostatic chuck assembly of claim 9 , wherein: the first annular gasket and the second annular gasket are electrically conductive; the first annular gasket passes other RF power from the baseplate to the first RF electrode; and the second annular gasket passes the RF power from the baseplate to the second RF electrode.
12. The electrostatic chuck assembly of claim 1 , further comprising a plurality of vias embedded within the ceramic material, wherein the plurality of vias electrically couple the first RF electrode to the at least one annular gasket or to an annular electrical contact disposed in the ceramic material.
13. The electrostatic chuck assembly of claim 1 , wherein the at least one annular gasket comprises a spiral gasket.
14. The electrostatic chuck assembly of claim 1 , further comprising a third layer disposed between the second layer and the baseplate and comprising dielectric material, wherein the at least one annular gasket extends through the third layer and contacts the baseplate.
15. The electrostatic chuck assembly of claim 1 , wherein the at least one annular gasket is disposed between and is in contact with the baseplate and the ceramic material.
16. The electrostatic chuck assembly of claim 1 , further comprising an O-ring, wherein: the at least one annular gasket has an outer radius that is less than an outer radius of the ceramic material; and the O-ring surrounds the at least one annular gasket.
17. The electrostatic chuck assembly of claim 1 , wherein the at least one annular gasket comprises an electrically conductive epoxy adhesive or an electrically conductive silicone adhesive.
18. The electrostatic chuck assembly of claim 1 , wherein the at least one annular gasket extends along an outer periphery of the second layer.
19. The electrostatic chuck assembly of claim 1 , wherein the at least one annular gasket contacts the first RF electrode.
20. The electrostatic chuck assembly of claim 1 , wherein: the second layer comprises a non-conductive elastomeric material; and the at least one annular gasket extends from the baseplate to the first RF electrode.
21. The electrostatic chuck assembly of claim 1 , wherein the second layer provides thermal separation between the first layer and the baseplate, such that a temperature difference between the first layer and the baseplate is up to 150° C.
22. A processing system comprising: the electrostatic chuck assembly of claim 1 ; and a temperature controller, wherein the baseplate comprises a plurality of fluid passages, the plurality of fluid passages are configured to receive a cooling fluid, and the temperature controller is configured to control temperatures of the baseplate by controlling a temperature of the cooling fluid and circulation of the cooling fluid through the plurality of fluid passages.
23. A processing system comprising: the electrostatic chuck assembly of claim 1 ; a processing chamber, wherein the electrostatic chuck assembly is disposed in the processing chamber; a gas source configured to supply a processing gas to an interior of the processing chamber; and a RF energy source configured to supply RF energy to the baseplate to energize the process gas into a plasma state during processing of the semiconductor substrate.
24. The electrostatic chuck assembly of claim 1 , wherein: the at least one annular gasket comprises a first gasket and a second gasket; the first gasket has an outer radius that is less than an outer radius of the ceramic material; and the first gasket surrounds the second gasket.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
May 24, 2018
October 13, 2020
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