Flash memory with assistant gate and method of fabricating the same

1. A flash memory, comprising: a substrate; two floating gates disposed on said substrate; an insulating layer conformally formed on said two floating gates and said substrate; an assistant gate disposed on said insulating layer between said two floating gates, wherein a portion of said assistant gate wraps around said two floating gates; two select gates disposed respectively on said insulating layer at outsides of said two floating gates and partly overlap said floating gate, wherein said floating gate has a point portion protruding upwardly at corner overlapping said select gate; and in the erase operation, said assistant gate is applied with a negative voltage and said select gate is applied with a positive voltage, and said point portion of said floating gate enhances electrons tunneling through said insulating layer between said floating gate and said select gate.

2. The flash memory of claim 1 , further comprising: a source formed in said substrate between said two floating gates, wherein said source partly overlaps said two floating gates; and two drains formed respectively in said substrate at outsides of said two select gates.

3. The flash memory of claim 2 , wherein said source is a source line, said drain connects to a bit line, said select gate is a word line, and said assistant gate connects to an operating voltage control circuit.

4. The flash memory of claim 1 , wherein the material of said floating gates, said assistant gate and said select gates are polysilicon.