Various examples are directed to systems and methods for reading a memory component. A processing device may receive an indication that a read operation at a physical address of the memory component failed. The processing device may execute a plurality of read retry operations at the physical address. The processing device may access a first syndrome weight describing a first error correction operation performed on a result of a first read retry operation of the plurality of read retry operations and a second syndrome weight describing a second error correction operation performed on a result of a second read retry operation of the plurality of read retry operations. The processing device may select a first threshold voltage associated with the first read retry operation based at least in part on the first syndrome weight and the second syndrome weight. The processing device may also execute a first auto read calibrate operation at the physical address, the first auto read calibrate operation having a baseline at the first threshold voltage.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A system, comprising: a memory component comprising one or more memory cells corresponding to a physical address; and a processing device operably coupled to the memory component, the processing device configured to perform operations comprising: receiving an indication that a read operation at the physical address of the memory component failed; executing a plurality of read retry operations at the physical address; accessing a first syndrome weight describing a first error correction operation performed on a first result of a first read retry operation of the plurality of read retry operations; accessing a second syndrome weight describing a second error correction operation performed on a second result of a second read retry operation of the plurality of read retry operations; selecting a first threshold voltage associated with the first read retry operation based at least in part on the first syndrome weight and the second syndrome weight; executing a first auto read calibrate operation at the physical address, the first auto read calibrate operation having a baseline at the selected first threshold voltage; receiving an indication that the first auto read calibrate operation failed; selecting a second threshold voltage associated with the second read retry operation; and executing a second auto read calibrate operation at the physical address, the second auto read calibrate operation having a baseline at the selected second threshold voltage.
2. The system of claim 1 , wherein the selecting of the first threshold voltage is based at least in part on determining that the first syndrome weight is less than the second syndrome weight.
3. The system of claim 1 , wherein: the operations further comprise accessing a third syndrome weight describing a third error correction operation performed on a third result of a third read retry operation of the plurality of read retry operations; and the selecting of the first threshold voltage is further based at least in part on the third syndrome weight.
4. The system of claim 3 , wherein: the selecting of the second threshold voltage associated with the second read retry operation is based at least in part on the second syndrome weight and the third syndrome weight; and the selecting of the first threshold voltage is further based at least in part on the third syndrome weight.
5. The system of claim 1 , wherein the selecting of the second threshold voltage is based at least in part on a list indicating an order of threshold voltages.
6. The system of claim 1 , wherein the operations further comprise: determining that the first read retry operation failed; and determining that the second read retry operation failed.
7. The system of claim 1 , wherein the operations further comprise: accessing an indication that the first auto read calibrate operation was successful; and returning a data unit read by the first auto read calibrate.
8. A method comprising: receiving an indication that a read operation at a physical address of a memory component failed; executing a plurality of read retry operations at the physical address; accessing a first syndrome weight describing a first error correction operation performed on a first result of a first read retry operation of the plurality of read retry operations; accessing a second syndrome weight describing a second error correction operation performed on a second result of a second read retry operation of the plurality of read retry operations; selecting a first threshold voltage associated with the first read retry operation based at least in part on the first syndrome weight and the second syndrome weight; executing a first auto read calibrate operation at the physical address, the first auto read calibrate operation having a baseline at the selected first threshold voltage; receiving an indication that the first auto read calibrate operation failed; selecting a second threshold voltage associated with the second read retry operation; and executing a second auto read calibrate operation at the physical address, the second auto read calibrate operation having a baseline at the selected second threshold voltage.
9. The method of claim 8 , wherein the selecting of the first threshold voltage is based at least in part on determining that the first syndrome weight is less than the second syndrome weight.
10. The method of claim 8 , further comprising accessing a third syndrome weight describing a third error correction operation performed on a third result of a third read retry operation of the plurality of read retry operations, and wherein the selecting of the first threshold voltage is further based at least in part on the third syndrome weight.
11. The method of claim 10 , wherein: the selecting of the second threshold voltage associated with the second read retry operation is based at least in part on the second syndrome weight and the third syndrome weight; and the selecting of the first threshold voltage is further based at least in part on the third syndrome weight.
12. The method of claim 8 , wherein the selecting of the second threshold voltage is based at least in part on a list indicating an order of threshold voltages.
13. The method of claim 8 , further comprising: determining that the first read retry operation failed; and determining that the second read retry operation failed.
14. The method of claim 8 , further comprising: accessing an indication that the first auto read calibrate operation was successful; and returning a data unit read by the first auto read calibrate.
15. A non-transitory machine-readable storage medium comprising instructions thereon that, when executed by a processing device, cause the processing device to perform operations comprising: receiving an indication that a read operation at a physical address of a memory component failed; executing a plurality of read retry operations at the physical address; accessing a first syndrome weight describing a first error correction operation performed on a first result of a first read retry operation of the plurality of read retry operations; accessing a second syndrome weight describing a second error correction operation performed on a second result of a second read retry operation of the plurality of read retry operations; selecting a first threshold voltage associated with the first read retry operation based at least in part on the first syndrome weight and the second syndrome weight; executing a first auto read calibrate operation at the physical address, the first auto read calibrate operation having a baseline at the selected first threshold voltage; receiving an indication that the first auto read calibrate operation failed; selecting a second threshold voltage associated with the second read retry operation; and executing a second auto read calibrate operation at the physical address, the second auto read calibrate operation having a baseline at the selected second threshold voltage.
16. The non-transitory machine-readable storage medium of claim 15 , wherein the selecting of the first threshold voltage is based at least in part on determining that the first syndrome weight is less than the second syndrome weight.
17. The non-transitory machine-readable storage medium of claim 15 , wherein the operations further comprise: accessing a third syndrome weight describing a third error correction operation performed on a third result of a third read retry operation of the plurality of read retry operations, and wherein the selecting of the first threshold voltage is further based at least in part on the third syndrome weight.
18. The non-transitory machine-readable storage medium of claim 17 , wherein: the selecting of the second threshold voltage associated with the second read retry opera is based at least in part on the second syndrome weight and the third syndrome weight; and the selecting of the first threshold voltage is further based at least in part on the third syndrome weight.
19. The non-transitory machine-readable storage medium of claim 15 , wherein the selecting of the second threshold voltage is based at least in part on a list indicating an order of threshold voltages.
20. The non-transitory machine-readable storage medium of claim 15 , wherein the operations further comprise: determining that the first read retry operation failed; and determining that the second read retry operation failed.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
November 16, 2018
February 9, 2021
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.