According to an embodiment, a semiconductor device includes a semiconductor layer, a first electrode, and a first insulating film. The first electrode extends in a first direction and is provided inside the semiconductor layer. The first insulating film is provided between the semiconductor layer and the first electrode, a thickness of the first insulating film in a direction from the first electrode toward the semiconductor layer increasing in stages along the first direction. The first insulating film has three or more mutually-different thicknesses.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor device, comprising: a semiconductor layer having a lower surface and an upper surface opposing to the lower surface, a trench being formed in the semiconductor layer from the upper surface; a first electrode provided in the trench, extending in a first direction, the first direction being parallel to the lower surface, the first direction being perpendicular to a second direction, the second direction being from the lower surface toward the upper surface; a second electrode provided under the first electrode in the trench, and extending in the first direction, the first electrode and the second electrode being arranged in the second direction in the trench; and an insulating film provided in the trench, the insulating film being disposed between the semiconductor layer and the first electrode, between the semiconductor layer and the second electrode, and between the first electrode and the second electrode, a thickness of the insulating film between the first electrode and the semiconductor layer in a third direction increasing in stages along the first direction, the third direction being perpendicular to the first direction and the second direction, the insulating film having a first thickness between the first electrode and the semiconductor layer in a first region of the semiconductor device, the insulating film having a second thickness between the first electrode and the semiconductor layer in a second region of the semiconductor device, the first region surrounding the second region, the insulating film having a third thickness between the first electrode and the semiconductor layer in a third region of the semiconductor device, the third region being located between the first region and the second region, the third thickness being thinner than the first thickness and thicker than the second thickness, and the insulating film having a fourth thickness between the second electrode and the semiconductor layer in the first region, the first thickness being substantially the same as the fourth thickness.
2. The device according to claim 1 , wherein the insulating film has the fourth thickness between the second electrode and the semiconductor layer in the second region.
3. The device according to claim 1 , wherein the insulating film contacts the semiconductor layer, the first electrode and the second electrode.
4. The device according to claim 1 , wherein the semiconductor layer includes: a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type provided on the first semiconductor layer, a third semiconductor layer of the first conductivity type provided on the second semiconductor layer in the second region, and a fourth semiconductor layer of the second conductivity type provided on the first semiconductor layer in the first region.
5. The device according to claim 4 , further comprising: a third electrode connected to the first semiconductor layer; and a fourth electrode connected to the third semiconductor layer, wherein the third electrode and the fourth electrode are arranged in the second direction.
6. A semiconductor device, comprising: a semiconductor substrate of a first conductivity type; a first semiconductor layer provided on the semiconductor substrate, the first semiconductor layer being of the first conductivity type; a second semiconductor layer provided selectively on the first semiconductor layer, the second semiconductor layer being of a second conductivity type; a third semiconductor layer provided selectively on the second semiconductor layer, the third semiconductor layer being of the first conductivity type; a first electrode provided inside a trench reaching the first semiconductor layer through the third semiconductor layer and the second semiconductor layer, the first electrode being provided at the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer; a gate insulating film provided between the first electrode and an inner surface of the trench; a second electrode provided in the first semiconductor layer, the second electrode being provided inside the trench and positioned lower than the first electrode; a field plate insulating film provided between the second electrode and the inner surface of the trench; a third electrode provided on a lower surface of the semiconductor substrate and connecting the semiconductor substrate; and a fourth electrode provided on the third semiconductor layer and connecting the third semiconductor layer, the gate insulating film becoming thicker in stages to have three or more mutually-different thicknesses from an element region through a terminal region on the semiconductor substrate, the terminal region surrounding the element region, and the element region including at least the third semiconductor layer, and a thickness of the field plate insulating film provided between the second electrode and the inner surface of the trench in the terminal region being substantially the same as a thickness of the gate insulating film provided between the first electrode and the inner surface of the trench in the terminal region.
7. The device according to claim 6 , wherein the gate insulating film has a first thickness and a second thickness in the element region, the second thickness is thicker than the first thickness, the gate insulating film has a third thickness in the terminal region, the third thickness is thicker than the second thickness, and the field plate insulating film has a fourth thickness in the terminal region, the fourth thickness is substantially the same as the third thickness.
8. The device according to claim 6 , wherein the three or more mutually-different thicknesses from the element region through the terminal region are mutually different along a first direction perpendicular to a second direction, the second direction being from the substrate to the fourth electrode.
9. The device according to claim 6 , wherein the gate insulating film has a first thickness in the element region, the gate insulating film has a second thickness and a third thickness in the terminal region, the second thickness is thicker than the first thickness, the third thickness is thicker than the second thickness, and the field plate insulating film has a fourth thickness in the terminal region, the fourth thickness is substantially the same as the third thickness.
10. The device according to claim 9 , wherein the gate insulating film has a first thickness in the terminal region.
11. The device according to claim 9 , wherein the second thickness is not less than 1.3 times the first thickness.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
August 30, 2017
May 11, 2021
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