A semiconductor memory device includes a semiconductor substrate including a diode formed in an upper layer portion of the semiconductor substrate, a first insulating film provided above the semiconductor substrate, a first conductive film provided above the first insulating film and coupled to the diode, a stacked body provided above the first conductive film, an insulator and an electrode film being stacked alternately in the stacked body, a semiconductor member piercing the stacked body and being connected to the first conductive film, and a charge storage member provided between the electrode film and the semiconductor member.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for manufacturing a semiconductor memory device, comprising: forming a first insulating film above a semiconductor substrate; forming a first conductive film above the first insulating film, the first conductive film being coupled to the semiconductor substrate; forming a stacked body above the first conductive film by alternately forming a first insulating material film and a second insulating material film; forming a hole in the stacked body to reach the first conductive film by performing reactive ion etching; forming a charge storage member inside the hole; forming a semiconductor member inside the hole where the charge storage member is formed, the semiconductor member being connected to the first conductive film; subdividing the first conductive film into a first portion reached by the hole and a second portion coupled to the semiconductor substrate after the forming of the hole; and replacing the second insulating material film with an electrode film after the forming of the semiconductor member.
2. The method according to claim 1 , further comprising: forming a diode in an upper layer portion of the semiconductor substrate, wherein the forming of the first insulating film includes forming a plug inside the first insulating film, the plug being coupled between the diode and the first conductive film, and the first portion is connected to the semiconductor member, the second portion is connected to the plug.
3. The method according to claim 2 , wherein the forming of the diode includes forming a first semiconductor layer of a first conductivity type in a portion of the upper layer portion of the semiconductor substrate, forming a second semiconductor layer of a second conductivity type in a portion of an upper layer portion of the first semiconductor layer, and forming a third semiconductor layer of the first conductivity type in a portion of an upper layer portion of the second semiconductor layer, the first conductive film being coupled to the third semiconductor layer.
4. The method according to claim 1 , further comprising: forming a second insulating film at the periphery of the stacked body, wherein the subdividing the first conductive film is performed by forming a first slit to pierce the second insulating film and the first conductive film.
5. The method according to claim 4 , wherein the subdividing the first conductive film includes forming a second slit to pierce the stacked body.
6. A method for manufacturing a semiconductor memory device, comprising: forming a first insulating film above a semiconductor substrate; forming a first conductive film above the first insulating film, the first conductive film being coupled to the semiconductor substrate; forming an intermediate insulating film above the first conductive film; forming a plug piercing the intermediate insulating film; forming a second conductive film above the intermediate insulating film, the second conductive film being coupled to the first conductive film via the plug; forming a stacked body above the second conductive film by alternately forming a first insulating material film and a second insulating material film; forming a hole in the stacked body, the second conductive film, and the intermediate insulating film to reach the first conductive film by performing reactive ion etching; forming a charge storage member inside the hole; forming a semiconductor member inside the hole where the charge storage member is formed, the semiconductor member being connected to the first conductive film; subdividing the second conductive film into a first portion and a second portion after the forming of the hole, the first portion surrounding the semiconductor member, the second portion being connected to the plug; and replacing the second insulating material film with an electrode film after the forming of the semiconductor member.
7. The method according to claim 6 , further comprising: forming a diode in an upper layer portion of the semiconductor substrate, wherein the forming of the diode includes forming a first semiconductor layer of a first conductivity type in a portion of the upper layer portion of the semiconductor substrate, forming a second semiconductor layer of a second conductivity type in a portion of an upper layer portion of the first semiconductor layer, and forming a third semiconductor layer of the first conductivity type in a portion of an upper layer portion of the second semiconductor layer, the first conductive film being coupled to the third semiconductor layer.
8. The method according to claim 6 , further comprising: forming a second insulating film at the periphery of the stacked body, wherein the subdividing the second conductive film is performed by forming a first slit to pierce the second insulating film and the second conductive film.
9. The method according to claim 8 , wherein the subdividing the second conductive film includes forming a second slit to pierce the stacked body.
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July 14, 2020
June 29, 2021
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