A semiconductor device and manufacturing process are provided wherein a first semiconductor device is electrically connected to redistribution structures. An antenna structure is located on an opposite side of the first semiconductor device from the redistribution structures, and electrical connections separate from the first semiconductor device connect the antenna structure to the redistribution structures.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of manufacturing a semiconductor device, the method comprising: forming a redistribution structure over a carrier wafer; after the forming the redistribution structure, attaching a first semiconductor device to the redistribution structure; electrically connecting an antenna substrate to the redistribution structure, wherein the first semiconductor device is located between the antenna substrate and the redistribution structure; and removing the carrier wafer.
2. The method of claim 1 , wherein the forming the redistribution structure comprises forming an antenna simultaneously within the redistribution structure.
3. The method of claim 1 , wherein the first semiconductor device is a radio frequency chip.
4. The method of claim 1 , wherein the electrically connecting the antenna substrate comprises electrically connecting a first antenna layer and a second antenna layer to the redistribution structure, wherein the first antenna layer is oriented at a right angle to the second antenna layer.
5. The method of claim 1 , further comprising encapsulating the first semiconductor device after the electrically connecting the antenna substrate to the redistribution structure.
6. The method of claim 1 , wherein the electrically connecting the antenna substrate further comprises: forming electrical connections separate from the first semiconductor device; and bonding the antenna substrate to the electrical connections.
7. The method of claim 6 , wherein the forming the electrical connections comprises forming an antenna simultaneously with the electrical connections.
8. A method of manufacturing a semiconductor device, the method comprising: forming a redistribution structure over a polymer layer over a carrier wafer; forming through substrate vias over the polymer layer; attaching a first semiconductor device to the polymer layer; encapsulating the through substrate vias and the first semiconductor device with an encapsulant; planarizing the encapsulant until the first semiconductor device, the encapsulant, and the through substrate vias are planar with each other; forming a redistribution structure over the encapsulant, the through substrate vias, and the first semiconductor device; patterning the polymer layer after the forming the redistribution structure; and bonding an antenna substrate to the through substrate vias through the polymer layer.
9. The method of claim 8 , wherein the forming the redistribution structure comprises forming an antenna simultaneously with the redistribution structure.
10. The method of claim 8 , wherein the forming the through substrate vias forms an antenna simultaneously with the through substrate vias.
11. The method of claim 8 , wherein the first semiconductor device is a radio frequency chip.
12. The method of claim 8 , wherein the antenna substrate includes a plurality of upper antenna layers, one of the plurality of upper antenna layers being oriented in a different direction from another of the plurality of upper antenna layers.
13. The method of claim 8 , further comprising applying an underfill material between the antenna substrate and the polymer layer.
14. A method of manufacturing a semiconductor device, the method comprising: forming redistribution structures connected to external connections; after the forming the redistribution structures, connecting a first semiconductor device to the redistribution structures; and placing an antenna substrate located on an opposite side of the first semiconductor device from the redistribution structures, wherein after the placing the antenna substrate the semiconductor device is electrically connected to the antenna substrate through the redistribution structures and electrical connections separate from the first semiconductor device.
15. The method of claim 14 , further comprising forming an antenna structure located within the redistribution structures.
16. The method of claim 14 , further comprising forming an antenna structure located within the electrical connections.
17. The method of claim 14 , wherein the antenna substrate comprises a plurality of antenna structures.
18. The method of claim 14 , further comprising forming a thermal via extending through the antenna substrate.
19. The method of claim 14 , wherein the electrical connections are through substrate vias.
20. The method of claim 14 , wherein the first semiconductor device is a radio frequency chip.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
November 9, 2018
July 13, 2021
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.