Substrate treating method, substrate treating liquid and substrate treating apparatus

1. A substrate treating method of performing drying treatment on a pattern-formed surface of a substrate, the substrate treating method comprising: a supplying step of supplying a substrate treating liquid containing a plastic crystalline material in a molten state to the pattern-formed surface of the substrate; forming a plastic crystalline layer without bringing the substrate treating liquid into a solid state by cooling, under atmospheric pressure, the substrate treating liquid to a temperature equal to or higher than a temperature that is 5° C. lower than a freezing point of the plastic crystalline material in the molten state and is equal to or lower than the freezing point of the plastic crystalline material in the molten state and thereby forming a plastic crystalline layer by bringing, on the pattern-formed surface, the plastic crystalline material into a state of a plastic crystal being an intermediate phase between a solid state and a liquid state, being softer than the solid state and having fluidity; and a removing step of removing the plastic crystalline layer from the pattern-formed surface by changing, under the atmospheric pressure, the plastic crystalline layer in the state of the plastic crystal into a gas state without passing through the solid state and the liquid state, wherein, in the removing step, while the cooling in the forming of a plastic crystalline layer is being performed, the plastic crystalline layer is removed from the pattern-formed surface with the state of the plastic crystal maintained at the temperature equal to or higher than the temperature that is 5° C. lower than the freezing point of the plastic crystalline material in the molten state and is equal to or lower than the freezing point of the plastic crystalline material in the molten state.

2. The substrate treating method according to claim 1 , wherein in at least any one of the plastic crystalline layer forming step and the removing step, a coolant is supplied toward a back surface on a side opposite to the pattern-formed surface of the substrate at a temperature which is equal to or higher than a temperature 5° C. lower than a freezing point of the plastic crystalline material and is equal to or lower than the freezing point of the plastic crystalline material.

3. The substrate treating method according to claim 1 , wherein in at least any one of the plastic crystalline layer forming step and the removing step, a gas inert to at least the plastic crystalline material is supplied toward the pattern-formed surface at a temperature which is equal to or higher than a temperature 5° C. lower than a freezing point of the plastic crystalline material and is equal to or lower than the freezing point of the plastic crystalline material.

4. The substrate treating method according to claim 1 , wherein in the removing step, a gas inert to at least the plastic crystalline material is supplied toward the pattern-formed surface at a temperature which is equal to or higher than a temperature 5° C. lower than a freezing point of the plastic crystalline material and is equal to or lower than the freezing point of the plastic crystalline material, and a coolant is supplied toward a back surface on a side opposite to the pattern-formed surface of the substrate at the temperature which is equal to or higher than the temperature 5° C. lower than the freezing point of the plastic crystalline material and is equal to or lower than the freezing point of the plastic crystalline material.

5. The substrate treating method according to claim 1 , wherein the plastic crystalline material is cyclohexane.

6. The substrate treating method according to claim 3 , wherein, in the removing step, the gas inert is supplied to the pattern-formed surface to remove the plastic crystalline layer while the state of the plastic crystal is being maintained at a pressure equal to or lower than a saturated vapor pressure of the plastic crystalline material.

7. The substrate treating method according to claim 4 , wherein, in the removing step, the gas inert is supplied to the pattern-formed surface to remove the plastic crystalline layer while the state of the plastic crystal is being maintained at a pressure equal to or lower than a saturated vapor pressure of the plastic crystalline material.