Mounting apparatus and method for manufacturing semiconductor device

1. A mounting apparatus for manufacturing a semiconductor device by bonding a semiconductor chip to a mounted object that is a substrate or another semiconductor chip, comprising: a stage which has a first surface on which the substrate is placed directly or via an intermediate member and a second surface opposite to the first surface; a mounting head that is capable of moving relative to the stage and bonds the semiconductor chip to the mounted object; and an irradiation unit that irradiates, from the second surface side, an electromagnetic wave transmitting through the stage and heating the substrate or the intermediate member, wherein the mounting head is configured to perform: a temporary compress-bonding processing for sequentially forming, at a plurality of places of the substrate, temporarily-laminated bodies obtained by temporarily compress-bonding and laminating one or more semiconductor chips on the substrate; and a final compress-bonding processing for sequentially performing, at the plurality of places of the substrate after the temporary compress-bonding processing, processing of finally compress-bonding one or more semiconductor chips configuring one temporarily-laminated body collectively by heating and pressurizing the temporarily-laminated body from an upper surface thereof, and wherein the irradiation unit irradiates the electromagnetic wave, in parallel with the finally compress-bonding processing, on places of the substrate or the intermediate member corresponding to the places where the final compress-bonding is performed.

2. The mounting apparatus according to claim 1 , wherein the stage has a first layer formed on the first surface side, and the first layer has a greater thermal resistance in a plane direction than the thermal resistance in a thickness direction.

3. The mounting apparatus according to claim 2 , wherein a plurality of the semiconductor chips is thermally compress-bonded on the substrate, and the irradiation unit has a change part which changes at least one of an irradiation region of the electromagnetic wave on the first surface and an irradiation position of the electromagnetic wave on the first surface.

4. The mounting apparatus according to claim 2 , wherein the stage further has a second layer formed closer to the second surface side than the first layer, and the first layer has a greater thermal resistance in the plane direction than the second layer.

5. The mounting apparatus according to claim 4 , wherein the second layer has higher rigidity than the first layer.

6. The mounting apparatus according to claim 4 , wherein the second layer is a solid portion made of a material through which the electromagnetic wave transmits, and the first layer is a portion in which a plurality of grooves is formed in an upper surface or a plurality of pores is formed in the layer.

7. The mounting apparatus according to claim 1 , wherein the substrate is a silicon wafer and is directly placed on the stage, the electromagnetic wave has a wavelength of 1200 nm or less, and the substrate is locally heated by the electromagnetic wave.

8. The mounting apparatus according to claim 1 , wherein the substrate is placed on the stage via the intermediate member, the electromagnetic wave has a wavelength which is absorbed by the intermediate member but not absorbed by the substrate, and the substrate is locally heated by heat transfer from the intermediate member locally heated by the electromagnetic wave.

9. A manufacturing method of semiconductor device for manufacturing a semiconductor device by bonding a semiconductor chip to a mounted object that is a substrate or another semiconductor chip, comprising: a placing step for placing the substrate on a first surface of a stage directly or via an intermediate member; a bonding step for bonding the semiconductor chip to the mounted object by a mounting head capable of moving relative to the stage; and a substrate heating step which is performed in parallel with at least a part of the bonding step and in which the substrate or the intermediate member is heated by irradiating, from an irradiation unit arranged opposite to the mounting head across the stage, an electromagnetic wave which is absorbed by the substrate or the intermediate member and transmits through the stage, wherein the bonding step comprises: a temporary compress-bonding step for sequentially forming, at a plurality of places of the substrate, temporarily-laminated bodies obtained by temporarily compress-bonding and laminating one or more semiconductor chips on the substrate by the mounting head; and a final compress-bonding step for sequentially performing, at the plurality of places of the substrate after the temporary compress-bonding step, processing of finally compress-bonding one or more semiconductor chips configuring one temporarily-laminated body collectively by heating and pressurizing the temporarily-laminated body from an upper surface thereof, and wherein in the substrate heating step, the electromagnetic wave is irradiated, in parallel with the processing of finally compress-bonding the semiconductor chips collectively, on places of the substrate or the intermediate member corresponding to the places where the final compress-bonding is performed.

10. The manufacturing method of semiconductor device according to claim 9 , wherein the stage has a first layer formed on the first surface side, and the first layer has a greater thermal resistance in a plane direction than the thermal resistance in a thickness direction.

11. The mounting apparatus according to claim 5 , wherein the second layer is a solid portion made of a material through which the electromagnetic wave transmits, and the first layer is a portion in which a plurality of grooves is formed in an upper surface or a plurality of pores is formed in the layer.

12. The mounting apparatus according to claim 2 , wherein the substrate is a silicon wafer and is directly placed on the stage, the electromagnetic wave has a wavelength of 1200 nm or less, and the substrate is locally heated by the electromagnetic wave.

13. The mounting apparatus according to claim 3 , wherein the substrate is a silicon wafer and is directly placed on the stage, the electromagnetic wave has a wavelength of 1200 nm or less, and the substrate is locally heated by the electromagnetic wave.

14. The mounting apparatus according to claim 4 , wherein the substrate is a silicon wafer and is directly placed on the stage, the electromagnetic wave has a wavelength of 1200 nm or less, and the substrate is locally heated by the electromagnetic wave.

15. The mounting apparatus according to claim 5 , wherein the substrate is a silicon wafer and is directly placed on the stage, the electromagnetic wave has a wavelength of 1200 nm or less, and the substrate is locally heated by the electromagnetic wave.

16. The mounting apparatus according to claim 2 , wherein the substrate is placed on the stage via the intermediate member, the electromagnetic wave has a wavelength which is absorbed by the intermediate member but not absorbed by the substrate, and the substrate is locally heated by heat transfer from the intermediate member locally heated by the electromagnetic wave.

17. The mounting apparatus according to claim 3 , wherein the substrate is placed on the stage via the intermediate member, the electromagnetic wave has a wavelength which is absorbed by the intermediate member but not absorbed by the substrate, and the substrate is locally heated by heat transfer from the intermediate member locally heated by the electromagnetic wave.

18. The mounting apparatus according to claim 4 , wherein the substrate is placed on the stage via the intermediate member, the electromagnetic wave has a wavelength which is absorbed by the intermediate member but not absorbed by the substrate, and the substrate is locally heated by heat transfer from the intermediate member locally heated by the electromagnetic wave.