Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method, comprising: applying a voltage ramp to a memory cell; determining whether a snapback event at the memory cell has occurred based at least in part on sensing a voltage level of the memory cell during the voltage ramp; determining a state of the memory cell from three or more memory states based at least in part on the sensed voltage level.
2. The method of claim 1 , further comprising: selecting the voltage ramp, wherein determining the state of the memory cell from the three or more memory states is based at least in part on selecting the voltage ramp.
3. The method of claim 2 , wherein the snapback event occurs based at least in part on applying the voltage ramp.
4. The method of claim 3 , further comprising: disconnecting the voltage ramp from the memory cell based at least in part on determining that the snapback event occurred during the voltage ramp.
5. The method of claim 1 , further comprising: comparing the sensed voltage level at which the snapback event occurs to a plurality of threshold voltages, wherein determining the state of the memory cell from the three or more memory states is based at least in part on the comparing.
6. The method of claim 1 , wherein the voltage ramp is applied across a selector element and the memory cell.
7. The method of claim 6 , wherein the selector element comprises an ovonic threshold switch.
8. The method of claim 1 , wherein the voltage ramp is applied to a chalcogenide element of the memory cell.
9. A device, comprising: a memory cell; an electric potential source coupled with the memory cell and configured to apply a voltage ramp to the memory cell; and a sense circuit coupled with the memory cell and configured to: determine whether a snapback event at the memory cell has occurred based at least in part on sensing a voltage level of the memory cell during the voltage ramp; and determine a state of the memory cell from three or more memory states based at least in part on the sensed voltage level.
10. The device of claim 9 , wherein the sense circuit is further configured to: select the voltage ramp; and set a threshold voltage of a plurality of threshold voltages for the snapback event, wherein determining the state of the memory cell from the three or more memory states is based at least in part on selecting the voltage ramp and setting the threshold voltage.
11. The device of claim 10 , wherein the sense circuit is further configured to: compare the sensed voltage level at which the snapback event occurs to the plurality of threshold voltages, wherein determining the state of the memory cell from the three or more memory states is based at least in part on the comparing.
12. The device of claim 9 , wherein the memory cell is configured to generate the snapback event.
13. The device of claim 9 , wherein the memory cell comprises a selector element.
14. The device of claim 13 , wherein the selector element comprises an ovonic threshold switch.
15. The device of claim 9 , wherein the memory cell comprises a chalcogenide material.
16. The device of claim 9 , wherein the state represents two or more binary logic bits.
17. An apparatus comprising: a memory array comprising a plurality of memory cells; a memory controller in electronic communication with the memory array and configured to: apply a voltage ramp to the plurality of memory cells; determine whether respective snapback events have occurred at the plurality of memory cells based at least in part on sensing voltage levels of the plurality of memory cells after applying the voltage ramp; and determine states of the plurality of memory cells from three or more memory states based at least in part on the sensed voltage levels.
18. The apparatus of claim 17 , wherein the memory controller is further configured to: determine that a first memory cell of the plurality of memory cells is in a first memory state of the three or more memory states based at least in part on determining that the respective snapback event for the first memory cell occurred based at least in part on a first sensed voltage level.
19. The apparatus of claim 18 , wherein the memory controller is further configured to: determine that a second memory cell of the plurality of memory cells is in a second memory state of the three or more memory states based at least in part on determining that the respective snapback event for the second memory cell occurred based at least in part on a second sensed voltage level.
20. The apparatus of claim 19 , wherein the memory controller is further configured to: determine that a third memory cell of the plurality of memory cells is in a third memory state of the three or more memory states based at least in part on determining that the respective snapback event for the third memory cell occurred based at least in part on a third sensed voltage level.
21. The apparatus of claim 19 , wherein the memory controller is further configured to: determine that a third memory cell of the plurality of memory cells is in a third memory state of the three or more memory states based at least in part on determining that the respective snapback event for the third memory cell has not occurred based at least in part on the first sensed voltage level and the second sensed voltage level.
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March 20, 2020
August 24, 2021
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