Disclosed are a plasma generating unit and a substrate treating apparatus including the same. The substrate treating apparatus includes a process chamber having a treatment space in the interior thereof, a substrate support unit configured to support a substrate in the treatment space, a gas supply unit configured to supply a process gas into the treatment space, and a plasma generating unit disposed outside the process chamber and configured to generate plasma from the process gas in the process chamber, wherein the plasma generating unit includes an antenna unit including a plurality of antenna coils configured to generate plasma from the process gas, and a magnetic structure including magnetic walls disposed between the plurality of antenna coils, and wherein the antenna unit includes a first antenna coil having a ring shape, and a second antenna coil disposed outside the first antenna coil and having a ring shape.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A substrate treating apparatus comprising: a process chamber having a treatment space in the interior thereof and a cover covering an upper opening of the process chamber; a substrate support unit configured to support a substrate in the treatment space; a gas supply unit configured to supply a process gas into the treatment space; and a plasma generating unit disposed outside the process chamber and configured to generate plasma from the process gas in the process chamber, wherein the plasma generating unit comprises: an antenna unit including a plurality of antenna coils configured to generate plasma from the process gas; and a magnetic structure, and wherein the antenna unit comprises: a first antenna coil having a ring shape; and a second antenna coil disposed outside the first antenna coil and having a ring shape, and wherein the magnetic structure comprises: a first magnetic wall disposed on the cover and to be closer to the first antenna coil than to the second antenna coil; and a second magnetic wall disposed on the cover and to be closer to the second antenna coil than to the first antenna coil and to be beside the second antenna coil, wherein the first magnetic wall and the second magnetic wall are disposed between the first antenna coil and the second antenna coil so that a magnetic field due to the first antenna coil and a magnetic field due to the second antenna coil are shielded from each other by the first magnetic wall and the second magnetic wall, wherein the first magnetic wall and the first antenna coil are spaced apart by a distance and the distance between the first magnetic wall and the first antenna coil is not more than the thickness of the first antenna coil, wherein the second magnetic wall and the second antenna coil are spaced apart by a distance and the distance between the second magnetic wall and the second antenna coil is not more than the thickness of the second antenna coil, and wherein an upper end of the first magnetic wall is inclined in a hook shape toward the first antennal coil, and an upper end of the second magnetic wall is inclined in a hook shape toward the second antennal coil.
2. The substrate treating apparatus of claim 1 , wherein the upper ends of the first and second magnetic walls are higher than upper ends of the first antenna coil and the second antenna coil.
3. The substrate treating apparatus of claim 1 , wherein the upper end of the first magnetic wall is higher than an upper end of the first antenna coil.
4. The substrate treating apparatus of claim 1 , wherein the upper end of the second magnetic wall is higher than an upper end of the second antenna coil.
5. The substrate treating apparatus of claim 4 , wherein the first antenna coil and the second antenna coil are provided at the same height, and wherein the first magnetic wall and the second magnetic wall are provided at the same height.
6. The substrate treating apparatus of claim 4 , wherein the first and second magnetic walls have a ring shape.
7. The substrate treating apparatus of claim 6 , wherein central axes of the first and second magnetic walls and central axes of the antenna coils are the same.
8. The substrate treating apparatus of claim 1 , wherein the heights of the first and second magnetic walls are more than 20 times as large as the thicknesses of the magnetic walls.
9. The substrate treating apparatus of claim 1 , wherein the first and second magnetic structure are formed of a ferromagnetic material having a magnetic permeability of not less than 10μ/μ 0 .
10. The substrate treating apparatus of claim 1 , wherein the magnetic structure further includes: a third magnetic wall disposed outside the second antenna coil.
11. The substrate treating apparatus of claim 10 , wherein the magnetic structure further includes: an upper magnetic wall connecting upper surfaces of the second magnetic wall and the third magnetic wall.
12. A plasma generating unit for a process chamber comprising: an antenna unit including a plurality of antenna coils configured to generate plasma from a process gas; and a magnetic structure, and wherein the antenna unit comprises: a first antenna coil having a ring shape; and a second antenna coil disposed outside the first antenna coil and having a ring shape, and wherein the magnetic structure comprises: a first magnetic wall disposed on a cover of the process chamber and to be closer to the first antenna coil than to the second antenna coil; and a second magnetic wall disposed on the cover of the process chamber and to be closer to the second antenna coil than to the first antenna coil and to be beside the second antenna coil, wherein the first magnetic wall and the second magnetic wall are disposed between the first antenna coil and the second antenna coil so that a magnetic field due to the first antenna coil and a magnetic field due to the second antenna coil are shielded from each other by the first magnetic wall and the second magnetic wall, wherein the first magnetic wall and the first antenna coil are spaced apart by a distance and the distance between the first magnetic wall and the first antenna coil is not more than the thickness of the first antenna coil, wherein the second magnetic wall and the second antenna coil are spaced apart by a distance and the distance between the second magnetic wall and the second antenna coil is not more than the thickness of the second antenna coil, and wherein an upper end of the first magnetic wall is inclined in a hook shape toward the first antennal coil, and an upper end of the second magnetic wall is inclined in a hook shape toward the second antennal coil.
13. The plasma generating unit of claim 12 , wherein the upper ends of the first and second magnetic wall are higher than upper ends of the first antenna coil and the second antenna coil.
14. The plasma generating unit of claim 12 , wherein the first antenna coil and the second antenna coil are provided at the same height, and wherein the first magnetic wall and the second magnetic wall are provided at the same height.
15. The plasma generating unit of claim 12 , wherein the first and second magnetic walls have a ring shape.
16. The plasma generating unit of claim 12 , wherein the magnetic structure further includes: a third magnetic wall disposed outside the second antenna coil.
17. The plasma generating unit of claim 16 , wherein the magnetic structure further includes: an upper magnetic wall connecting upper surfaces of the second magnetic wall and the third magnetic wall.
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March 28, 2018
December 7, 2021
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