In a power semiconductor device, power semiconductor elements are mounted on a large die pad and the like. The large die pad is joined to a power lead via a lead stepped portion. The large die pad has a first end portion and a second end portion located with a distance therebetween in the X axis direction. In the Y axis direction, the lead stepped portion is joined to the first end portion side relative to a central line between the first end portion and the second end portion. The large die pad is inclined such that a distance between the large die pad and the first main surface of the molding resin is longer from the first end portion toward the second end portion.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A power semiconductor device comprising: a lead terminal; a first die pad; a first semiconductor element mounted on the first die pad; a first hanging lead connected to the first die pad and joined to the lead terminal; and a sealing material to seal the first die pad, the first semiconductor element, and the first hanging lead so as to expose a portion of the lead terminal, wherein the first die pad has a first end portion and a second end portion located with a first distance between the first end portion and the second end portion in a first direction, in a second direction crossing the first direction, the first hanging lead is connected to the first die pad on the first end portion side relative to a center between the first end portion and the second end portion in the first die pad, the first die pad is disposed on a side on which a first main surface of the sealing material is located relative to a first location in a third direction, the first main surface covering a side of the first die pad opposite to a side of the first die pad on which the first semiconductor element is mounted, the third direction crossing the first direction and the second direction, the first location being a location at which the lead terminal is located, and the first die pad is inclined such that a thickness of the sealing material from a portion of the sealing material on the side of the first die pad opposite to the side of the first die pad on which the first semiconductor element is mounted to the first main surface is thicker from the first end portion side of the first die pad toward the second end portion side of the first die pad, the power semiconductor device further comprising: a second die pad; a second semiconductor element mounted on the second die pad; and a second hanging lead connected to the second die pad and joined to the lead terminal, wherein ‘the second die pad has a third end portion and a fourth end portion located with a second distance between the third end portion and the fourth end portion in the first direction, in the second direction, the second hanging lead is connected to the second die pad on the third end portion side relative to a center between the third end portion and the fourth end portion in the second die pad, the second die pad is disposed on a side on which the first main surface of the sealing material is located relative to the first location in the third direction, the first main surface covering a side of the second die pad opposite to a side of the second die pad on which the second semiconductor element is mounted, the first location being a location at which the lead terminal is located, the second die pad is inclined such that a thickness of the sealing material from a portion of the sealing material on the side of the second die pad opposite to the side of the second die pad on which the second semiconductor element is mounted to the first main surface is thicker from the third end portion side of the second die pad toward the fourth end portion side of the second die pad, the first die pad has a first width in the first direction, the second die pad has a second width in the first direction, the second width being shorter than the first width, the sealing material includes a first side portion and a second side portion facing each other with a third distance between the first side portion and the second side portion in the first direction, the third distance being longer than the first distance, the first die pad is disposed on the first side portion side, and the second die pad is disposed on the second side portion side relative to the first die pad.
2. The power semiconductor device according to claim 1 , comprising a first protruding lead that protrudes from the lead terminal in the second direction at the first location at which the lead terminal is located, wherein the first protruding lead is disposed on the first end portion side of the first die pad relative to the first hanging lead.
3. The power semiconductor device according to claim 1 , wherein the first die pad is inclined such that the thickness of the sealing material from the portion of the sealing material on the side of the first die pad opposite to the side of the first die pad on which the first semiconductor element is mounted to the first main surface of the sealing material is thicker toward a side further away in the second direction from a side on which the first die pad is connected to the first hanging lead.
4. The power semiconductor device according to claim 1 , wherein the second die pad includes a bent portion bent to have a first direction component extending in the first direction, and a second direction component extending in the second direction, and the bent portion is connected to the second hanging lead.
5. The power semiconductor device according to claim 1 , comprising a second protruding lead that protrudes from the lead terminal in the second direction at the first location at which the lead terminal is located, wherein the second protruding lead is disposed on the third end portion side of the second die pad relative to the second hanging lead.
6. The power semiconductor device according to claim 1 , wherein the second die pad is inclined such that the thickness of the sealing material from the portion of the sealing material on the side of the second die pad opposite to the side of the second die pad on which the second semiconductor element is mounted to the first main surface of the sealing material is thicker toward a side further away in the second direction from a side on which the second die pad is connected to the second hanging lead.
7. The power semiconductor device according to claim 1 , comprising: a third die pad; and a third semiconductor element mounted on the third die pad, wherein the sealing material includes a third side portion and a fourth side portion facing each other with a fourth distance between the third side portion and the fourth side portion in the second direction, and a second main surface facing the first main surface, the first die pad is disposed along the third side portion, the third die pad is disposed along the fourth side portion, and the third die pad is disposed on the second main surface side relative to the first die pad.
8. The power semiconductor device according to claim 1 , wherein a tapered portion is provided at each of end portions of the first die pad and the second die pad facing each other.
9. The power semiconductor device according to claim 1 , wherein a curved portion is provided at each of end portions of the first die pad and the second die pad facing each other.
10. A method for manufacturing a power semiconductor device, the method comprising: forming a lead frame; mounting a first semiconductor element on the lead frame; disposing the lead frame in a mold such that a side of the lead frame on which the first semiconductor element is mounted orients upward, the mold being provided with a lower mold, an upper mold, and a sealing material introduction opening; introducing a sealing material from the sealing material introduction opening into the mold; and removing the mold, wherein the forming of the lead frame includes forming a lead terminal, a first die pad, and a first hanging lead, the first die pad having a first end portion and a second end portion located with a first distance between the first end portion and the second end portion in a first direction, the first semiconductor element being mounted on the first die pad, in a second direction crossing the first direction, the first hanging lead being connected to the first die pad on the first end portion side relative to a center between the first end portion and the second end portion in the first die pad, the first hanging lead being joined to the lead terminal, and disposing the first die pad at a location lower than a first location in a third direction by performing a bending process onto the first hanging lead, the first location being a location at which the lead terminal is located, the third direction crossing the first direction and the second direction, in the disposing of the lead frame in the mold, the sealing material introduction opening is disposed below the first location at a location from which the sealing material is introduced toward the first hanging lead in the first direction, in the introducing of the sealing material into the mold, the sealing material introduced from the sealing material introduction opening into the mold includes a first sealing material portion provided between the first die pad and the lower mold, and a second sealing material portion provided between the first die pad and the upper mold, when providing the first sealing material portion and the second sealing material portion, the first die pad is inclined such that the second end portion side of the first die pad orients upward relative to the first end portion side of the first die pad due to the second end portion side of the first die pad being pushed up by the first sealing material portion relative to the first end portion side of the first die pad, the first hanging lead being connected to the first end portion side of the first die pad.
11. The method for manufacturing the power semiconductor device according to claim 10 , wherein the forming of the lead frame includes forming a first protruding lead that protrudes from the lead terminal in the second direction and that is disposed on the first end portion side of the first die pad relative to the first hanging lead, and in the disposing of the lead frame in the mold, the sealing material introduction opening is disposed below the first protruding lead when seen in the first direction.
12. The method for manufacturing the power semiconductor device according to claim 10 , wherein in the introducing of the sealing material into the mold, before introducing the sealing material into the mold, a first pin member is disposed on the second end portion side of the first die pad from above the first die pad so as to avoid contact with the first die pad, and the first pin member is pulled out after providing the sealing material in the mold.
13. The method for manufacturing the power semiconductor device according to claim 10 , wherein the forming of the lead frame includes forming a second die pad and a second hanging lead, the second die pad having a third end portion and a fourth end portion located with a second distance between the third end portion and the fourth end portion in the first direction, a second semiconductor element being mounted on the second die pad, the second die pad being located on a side opposite to the sealing material introduction opening relative to the first die pad, in the second direction, the second hanging lead being connected to the second die pad on the third end portion side relative to a center between the third end portion and the fourth end portion in the second die pad, the second hanging lead being joined to the lead terminal, and disposing the second die pad at a location lower than the first location in the third direction by performing a bending process onto the second hanging lead, the first location being a location at which the lead terminal is located, and in the introducing of the sealing material into the mold, when providing the first sealing material portion and the second sealing material portion, the second die pad is inclined such that the fourth end portion side of the second die pad orients upward relative to the third end portion side of the second die pad due to the fourth end portion side of the second die pad being pushed up by the first sealing material portion relative to the third end portion side of the second die pad, the second hanging lead being connected to the third end portion side of the second die pad.
14. The method for manufacturing the power semiconductor device according to claim 13 , wherein the forming of the lead frame includes forming a second protruding lead that protrudes from the lead terminal in the second direction and that is disposed on the third end portion side of the second die pad relative to the second hanging lead, and in the disposing of the lead frame in the mold, the sealing material introduction opening is disposed below the second protruding lead when seen in the first direction.
15. The method for manufacturing the power semiconductor device according to claim 13 , wherein in the introducing of the sealing material into the mold, before introducing the sealing material into the mold, a second pin member is disposed on the fourth end portion side of the second die pad from above the second die pad so as to avoid contact with the second die pad, and the second pin member is pulled out after providing the sealing material in the mold.
16. A method for manufacturing a power semiconductor device, the method comprising: forming a lead frame; mounting a first semiconductor element on the lead frame; disposing the lead frame in a mold such that a side of the lead frame on which the first semiconductor element is mounted orients upward, the mold being provided with a lower mold, an upper mold, and a sealing material introduction opening; introducing a sealing material from the sealing material introduction opening into the mold; and removing the mold, wherein the forming of the lead frame includes forming a lead terminal, a first die pad, and a first hanging lead, the first die pad having a first end portion and a second end portion located with a first distance between the first end portion and the second end portion in a first direction, the first semiconductor element being mounted on the first die pad, in a second direction crossing the first direction, the first hanging lead being connected to the first die pad on the first end portion side relative to a center between the first end portion and the second end portion in the first die pad, the first hanging lead being joined to the lead terminal, and disposing the first die pad at a location lower than a first location in a third direction by performing a bending process onto the first hanging lead, the first location being a location at which the lead terminal is located, the third direction crossing the first direction and the second direction, in the disposing of the lead frame in the mold, the sealing material introduction opening is disposed below the first location at a location from which the sealing material is introduced toward the first hanging lead in the first direction, the forming of the lead frame includes forming a first protruding lead that protrudes from the lead terminal in the second direction and that is disposed on the first end portion side of the first die pad relative to the first hanging lead, and in the introducing of the sealing material into the mold, when seen in the first direction, the sealing material is introduced from the sealing material introduction opening disposed below the first protruding lead so as to incline the first die pad such that the second end portion side orients upward relative to the first end portion side.
17. A power conversion device comprising: a main conversion circuit to convert input power and output the converted power, the main conversion circuit having the power semiconductor device recited in claim 1 ; and a control circuit to output, to the main conversion circuit, a control signal for controlling the main conversion circuit.
18. The power semiconductor device according to claim 1 , wherein a gate trace remains at the first side portion in the sealing material, the gate trace is located at the first side portion on the first main surface side relative to the first location and exists at a location facing the first hanging lead in the first direction.
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April 19, 2019
January 4, 2022
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