Compound, substrate for pattern formation, photodegradable coupling agent, pattern formation method, and transistor production method

1. A compound represented by Formula (1): wherein, in the Formula (1), R 1 represents any one group selected from an alkyl group having 1 to 5 carbon atoms, a group represented by Formula (R2−1), and a group represented by Formula (R2−2), R 2 represents a group represented by the Formula (R2−1) or the Formula (R2−2), n1 represents an integer of 0 to 5, and n2 represents a natural number of 1 to 5: wherein, in the Formulae (R2−1) and (R2−2), R 21 and R 22 each independently represents an alkyl group having 1 to 5 carbon atoms, n represents a natural number, and the wavy line represents a bonding site.

2. The compound according to claim 1 , wherein R 21 or R 22 represents any of a methyl group, an isopropyl group, or a tert-butyl group.

3. A substrate for pattern formation, which has a surface chemically modified by the compound according to claim 1 .

4. A photodegradable coupling agent which is formed of the compound according to claim 1 .

5. A pattern formation method of forming a pattern on a surface of an object to be treated, comprising: aminating at least a part of the surface of the object to be treated to form an aminated surface; chemically modifying the aminated surface using the compound according to claim 1 ; irradiating the chemically modified surface to be treated with light in a predetermined pattern to generate a latent image formed of a hydrophilic region and a water-repellent region; and disposing a pattern forming material in the hydrophilic region or the water-repellent region.

6. The pattern formation method according to claim 5 , wherein the predetermined pattern corresponds to a circuit pattern for an electronic device.

7. The pattern formation method according to claim 5 , wherein the pattern forming material contains a conductive material, a semiconductor material, or an insulating material.

8. The pattern formation method according to claim 7 , wherein the conductive material is formed of a conductive fine particle dispersion liquid.

9. The pattern formation method according to claim 7 , wherein the semiconductor material is formed of an organic semiconductor material dispersion liquid.

10. A pattern formation method of forming a pattern on a surface of an object to be treated, comprising: aminating at least a part of the surface of the object to be treated to form an aminated surface; chemically modifying the aminated surface using the compound according to claim 1 ; irradiating the chemically modified surface to be treated with light in a predetermined pattern to generate a latent image formed of a hydrophilic region and a water-repellent region; and disposing a catalyst for electroless plating in the hydrophilic region and performing electroless plating.

11. The pattern formation method according to claim 5 , wherein the object is a substrate having a flexibility.

12. The pattern formation method according to claim 5 , wherein the object is formed of a resin material.

13. The pattern formation method according to claim 5 , wherein the light includes light having a wavelength included in a range of 200 nm to 450 nm.

14. A transistor production method of producing a transistor which includes a gate electrode, a source electrode, and a drain electrode, comprising: forming at least one electrode among the gate electrode, the source electrode, and the drain electrode using the pattern formation method according to claim 5 .