In an embodiment is provided a method of forming a blind via in a substrate comprising a mask layer, a conductive layer, and a dielectric layer that includes conveying the substrate to a scanning chamber; determining one or more properties of the blind via, the one or more properties comprising a top diameter, a bottom diameter, a volume, or a taper angle of about 80° or more; focusing a laser beam at the substrate to remove at least a portion of the mask layer; adjusting the laser process parameters based on the one or more properties; and focusing the laser beam, under the adjusted laser process parameters, to remove at least a portion of the dielectric layer within the volume to form the blind via. In some embodiments, the mask layer can be pre-etched. In another embodiment is provided an apparatus for forming a blind via in a substrate.
Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A method of forming a blind via in a substrate, comprising: conveying the substrate to a scanning chamber, the substrate comprising a conductive layer, a dielectric layer disposed on at least a portion of the conductive layer, and a mask layer disposed on at least a portion of the dielectric layer, the mask layer providing a substrate surface; determining one or more properties of the blind via, the one or more properties comprising: a top diameter of the blind via and a bottom diameter of the blind via, the blind via having a height from the top diameter to bottom diameter, the top diameter being greater than the bottom diameter; a volume of the blind via, the volume corresponding to the top diameter, the bottom diameter, and the height; or a taper angle of about 80 degrees or more; focusing a laser beam emitted from a laser source, under laser process parameters, at the substrate surface to remove at least a portion of the mask layer; adjusting the laser process parameters based on the one or more properties; and focusing the laser beam, under the adjusted laser process parameters, to remove at least a portion of the dielectric layer within the volume to form the blind via.
Semiconductor fabrication. This invention describes a method for creating a blind via, which is a hole that does not go all the way through the substrate. The substrate has multiple layers: a conductive layer, a dielectric layer on top of it, and a mask layer on top of the dielectric. The method involves bringing the substrate into a scanning chamber. Before forming the via, key dimensions and characteristics of the desired blind via are determined. These properties include the top and bottom diameters, the height, the volume, and the taper angle (which is specified as about 80 degrees or more, meaning it's nearly vertical). The laser process parameters are then adjusted based on these determined properties. Initially, a laser beam is focused on the substrate surface to remove part of the mask layer. Subsequently, the laser beam, using the adjusted parameters, is focused to remove material from the dielectric layer within the calculated volume, thereby forming the blind via.
2. The method of claim 1 , wherein the laser process parameters include a laser power, a laser energy in a burst, a focal beam diameter, a focus height, a burst energy, a pulse energy, a number of pulses in a burst, a pulse frequency, a burst frequency, a beam spot size, an M2 value, an offset of beam focusing from substrate surface, or a combination thereof.
This invention relates to laser processing systems, specifically methods for optimizing laser process parameters to improve material processing outcomes. The technology addresses challenges in achieving precise and consistent results in laser-based manufacturing, such as cutting, drilling, welding, or surface modification, where variations in laser settings can lead to inefficiencies, defects, or suboptimal performance. The method involves adjusting one or more laser process parameters to enhance the processing quality. Key parameters include laser power, laser energy per burst, focal beam diameter, focus height, burst energy, pulse energy, number of pulses in a burst, pulse frequency, burst frequency, beam spot size, M2 value (beam quality factor), and the offset of beam focusing from the substrate surface. By controlling these parameters, the system can optimize energy delivery to the material, improving precision, reducing thermal damage, and ensuring uniformity in the processed region. The method is applicable to various laser-based applications, including but not limited to micro-machining, additive manufacturing, and semiconductor fabrication. By dynamically adjusting these parameters, the system can adapt to different materials, thicknesses, and processing requirements, leading to higher efficiency and reliability in industrial laser processes. The invention aims to provide a more flexible and precise control mechanism for laser systems, addressing limitations in traditional fixed-parameter approaches.
3. The method of claim 1 , wherein the laser process parameters comprise: an amount of laser energy in a burst of about 5 μJ or more; a focal beam diameter that is from about 2 μm to about 10 μm for drilling 5 μm diameter vias; a focal beam diameter that is from about 7 μm to about 12 μm for drilling 10 μm diameter vias; a focus height that is from about 0 μm to about 50 μm; a pulse frequency that is about 500 MHz or more; a number of pulses in a burst that is about 2 or more; a number of bursts of about 2 or more; a burst frequency of about 100 kHz or more; or a combination thereof.
This invention relates to laser drilling processes for creating microvias in materials, addressing challenges in precision, efficiency, and quality control. The method involves optimizing laser process parameters to achieve high-quality vias with specific diameters. For drilling 5 μm diameter vias, the laser uses a focal beam diameter between 2 μm and 10 μm, while for 10 μm diameter vias, the focal beam diameter ranges from 7 μm to 12 μm. The laser delivers a burst of energy exceeding 5 μJ, with a pulse frequency of at least 500 MHz. Each burst consists of two or more pulses, and the process employs two or more bursts per via. The burst frequency is maintained at 100 kHz or higher, and the focus height is adjusted between 0 μm and 50 μm. These parameters ensure precise control over via dimensions, minimizing thermal damage and improving drilling efficiency. The method is particularly useful in semiconductor manufacturing and microelectronics, where accurate via formation is critical for interconnects and packaging. The combination of these parameters allows for consistent via quality across different material types and thicknesses.
4. The method of claim 1 , wherein the top diameter is about 10 μm or less.
A method for fabricating microstructures with precise dimensions involves forming a structure with a top diameter of approximately 10 micrometers or less. The process includes creating a sacrificial layer on a substrate, depositing a structural material over the sacrificial layer, and selectively removing the sacrificial layer to release the microstructure. The structural material may be a polymer, metal, or semiconductor, and the sacrificial layer is typically a different material that can be dissolved or etched away without damaging the microstructure. The method ensures high precision in the top diameter, which is critical for applications in microelectromechanical systems (MEMS), microfluidics, and nanotechnology. The small diameter enables the fabrication of intricate, high-density microstructures with controlled mechanical and optical properties. The process may also include additional steps such as patterning the structural material, annealing, or surface treatment to enhance structural integrity and functionality. The resulting microstructures are used in sensors, actuators, and other miniaturized devices where precise dimensional control is essential.
5. The method of claim 1 further comprising removing the mask layer from the substrate.
A method for semiconductor fabrication involves processing a substrate with a mask layer to form a patterned structure. The method includes applying a mask layer to a substrate, patterning the mask layer to define a target region, and performing an etching process to remove material from the substrate in the target region, thereby forming a patterned structure. The mask layer is then removed from the substrate after the etching process is complete. The patterning step may involve lithography techniques to selectively expose portions of the mask layer, and the etching process may include dry or wet etching methods to precisely control material removal. The removal of the mask layer ensures that no residual material interferes with subsequent fabrication steps, maintaining the integrity of the patterned structure. This method is particularly useful in integrated circuit manufacturing, where precise control over material removal and surface cleanliness is critical for device performance. The process may be applied to various semiconductor materials, including silicon, gallium arsenide, or other compound semiconductors, and can be adapted for different device architectures, such as transistors, memory cells, or photonic components. The removal step ensures compatibility with downstream processes, such as deposition, doping, or additional patterning steps, by eliminating potential contamination or interference from the mask layer.
6. The method of claim 1 , wherein: the mask layer comprises Al, Cu, W, Mo, Cr, or a combination thereof; the mask layer has a height of about 2 μm or less; or a combination thereof.
This invention relates to semiconductor manufacturing, specifically to the formation of mask layers used in etching processes. The problem addressed is the need for improved mask materials and dimensions to enhance etching precision and efficiency in semiconductor fabrication. The mask layer serves as a protective barrier during etching, allowing selective removal of underlying material while preserving the masked regions. The mask layer is composed of materials such as aluminum (Al), copper (Cu), tungsten (W), molybdenum (Mo), chromium (Cr), or a combination of these metals. These materials are chosen for their resistance to etching chemicals and high-temperature stability, ensuring reliable masking performance. The mask layer has a height of approximately 2 micrometers or less, which optimizes etching accuracy by minimizing undercutting and improving feature resolution. The reduced height also facilitates finer patterning, crucial for advanced semiconductor devices. The combination of specific mask materials and controlled thickness enhances etching uniformity and reduces defects, such as residual mask material or incomplete etching. This method is particularly useful in applications requiring high-precision patterning, such as integrated circuit manufacturing, where precise control over feature dimensions is critical. The invention improves yield and reliability in semiconductor production by enabling more accurate and consistent etching processes.
7. The method of claim 6 , wherein when the mask layer comprises Mo or W, the method further comprises depositing a layer of copper on the mask layer.
This invention relates to a method for fabricating semiconductor devices, specifically addressing challenges in mask layer deposition and compatibility with subsequent processing steps. The method involves forming a mask layer on a substrate, where the mask layer may include materials such as molybdenum (Mo) or tungsten (W). A key aspect of the invention is the deposition of a copper layer on the mask layer when the mask layer comprises Mo or W. This copper layer serves to enhance adhesion, improve conductivity, or prevent diffusion between the mask layer and other materials in the device. The method ensures compatibility with subsequent semiconductor processing steps, such as etching or deposition, by mitigating issues like poor adhesion or material contamination. The copper layer may be deposited using techniques like physical vapor deposition (PVD) or chemical vapor deposition (CVD), depending on the specific requirements of the semiconductor fabrication process. The invention is particularly useful in advanced semiconductor manufacturing where precise control over material interactions is critical for device performance and reliability.
8. The method of claim 1 , wherein the laser source is a femtosecond ultraviolet laser with a wavelength of about 400 nm or shorter.
This invention relates to laser processing systems, specifically for high-precision material modification. The technology addresses challenges in achieving fine, controlled material removal or structuring with conventional lasers, which often lack the precision or efficiency required for advanced applications like microfabrication, semiconductor manufacturing, or medical device production. The method involves using a femtosecond ultraviolet laser with a wavelength of approximately 400 nm or shorter. Femtosecond lasers emit ultra-short pulses, enabling precise energy delivery with minimal thermal damage to surrounding material. The ultraviolet wavelength range enhances absorption in many materials, improving processing efficiency and resolution. This combination allows for ultra-fine material removal or structuring at the nanoscale, making it suitable for applications requiring high precision, such as creating microstructures in semiconductors, fabricating optical components, or performing delicate medical procedures. The system may include additional components like beam shaping optics, positioning stages, or feedback control mechanisms to optimize processing accuracy and repeatability. The use of a femtosecond ultraviolet laser with the specified wavelength ensures minimal heat-affected zones and high-quality surface finishes, addressing limitations of longer-wavelength or continuous-wave lasers.
9. The method of claim 1 , wherein the mask layer comprises Cr.
A method for fabricating a semiconductor device involves forming a mask layer on a substrate, where the mask layer includes chromium (Cr). This mask layer is used to selectively pattern underlying layers during semiconductor processing. The chromium-based mask layer provides high etch resistance and precise patterning capabilities, which are critical for defining fine features in advanced semiconductor manufacturing. The method may include depositing the Cr-containing mask layer using techniques such as sputtering or chemical vapor deposition, followed by lithographic patterning and etching steps to transfer the pattern into the substrate or underlying layers. The use of chromium enhances the mask's durability during plasma etching processes, reducing defects and improving yield. This approach is particularly useful in applications requiring high-resolution patterning, such as in the production of integrated circuits, microelectromechanical systems (MEMS), or photonic devices. The chromium mask layer may be part of a multi-layer stack, where additional layers, such as organic planarization layers or anti-reflective coatings, are used to optimize the patterning process. The method ensures accurate feature definition while maintaining structural integrity during subsequent processing steps.
10. A method of forming a blind via in a substrate, comprising: conveying the substrate to a scanning chamber, the substrate comprising a conductive layer of about 2 um or more in height, a dielectric layer disposed on at least a portion of the conductive layer, and a pre-etched mask layer disposed on at least a portion of the dielectric layer, the pre-etched mask layer having blind via openings to expose at least a portion of the dielectric layer and the dielectric layer providing a substrate surface; determining one or more properties of the blind via, the one or more properties comprising: a top diameter of the blind via and a bottom diameter of the blind via, the blind via having a height from the top diameter to bottom diameter, the top diameter being greater than the bottom diameter, and the top diameter corresponding to the blind via openings; a volume of the blind via, the volume corresponding to the top diameter, the bottom diameter, and the height; or a taper angle of 80 degrees or more; focusing a laser beam emitted from a laser source, under laser process parameters, at the substrate surface to remove a first portion of the dielectric layer within the volume without causing more than half-of-the thickness of mask layer damage to the pre-etched mask layer; adjusting laser process parameters based on the one or more properties; and focusing the laser beam, under the adjusted laser process parameters, to remove a second portion of the dielectric layer within the volume to form the blind via.
This invention relates to a method for forming a blind via in a substrate, addressing challenges in precision laser drilling of high-aspect-ratio vias in substrates with thick conductive layers. The substrate includes a conductive layer at least 2 micrometers thick, a dielectric layer on the conductive layer, and a pre-etched mask layer with blind via openings exposing the dielectric layer. The method involves scanning the substrate in a chamber, measuring key via properties such as top and bottom diameters, volume, and taper angle (80 degrees or more), and using a laser to remove dielectric material in two stages. Initially, the laser removes a first portion of the dielectric layer within the via volume while minimizing damage to the mask layer (limited to half its thickness). Laser parameters are then adjusted based on the measured via properties, and the laser removes a second portion of the dielectric layer to complete the via formation. This approach ensures precise control over via geometry, particularly for high-taper-angle vias, while protecting the mask layer from excessive damage. The method is applicable in semiconductor and microelectronics manufacturing where accurate via formation is critical for interconnect structures.
11. The method of claim 10 , wherein the laser process parameters include a laser power, a laser energy in a burst, a focal beam diameter, a focus height, a burst energy, a pulse energy, a number of pulses in a burst, a pulse frequency, a burst frequency, a beam spot size, an M2 value, an offset of beam focusing from substrate surface, or a combination thereof.
This invention relates to laser processing systems, specifically methods for optimizing laser process parameters to improve material processing outcomes. The problem addressed is the need for precise control of laser parameters to achieve desired material modifications, such as cutting, drilling, or surface treatment, while minimizing defects and inefficiencies. The method involves adjusting laser process parameters to enhance processing accuracy and consistency. Key parameters include laser power, laser energy per burst, focal beam diameter, focus height, burst energy, pulse energy, number of pulses per burst, pulse frequency, burst frequency, beam spot size, M2 value (beam quality factor), and the offset of beam focusing relative to the substrate surface. These parameters are selected and adjusted based on the material properties and desired processing outcomes to optimize performance. By controlling these parameters, the method ensures uniform energy delivery, reduces thermal damage, and improves processing speed. The technique is applicable to various materials, including metals, ceramics, and polymers, in industries such as manufacturing, electronics, and aerospace. The invention provides a systematic approach to laser parameter optimization, leading to higher precision and repeatability in laser-based material processing.
12. The method of claim 10 , wherein the laser process parameters comprise: an amount of laser energy in a burst of about 5 μJ or more; a focal beam diameter that is from about 2 μm to about 10 μm for drilling 5 μm diameter vias; a focal beam diameter that is from about 7 μm to about 12 μm for drilling 10 μm diameter vias; a focus height that is from about 0 μm to about 50 μm; a pulse frequency that is about 500 MHz or more; a number of pulses in a burst that is about 2 or more; a number of bursts of about 2 or more; a burst frequency of about 100 kHz or more; or a combination thereof.
This invention relates to laser drilling processes for creating microvias in materials, addressing challenges in precision, efficiency, and quality control. The method involves optimizing laser process parameters to achieve high-quality vias with specific diameters. For drilling 5 μm diameter vias, the laser energy per burst is at least 5 μJ, with a focal beam diameter between 2 μm and 10 μm. For 10 μm diameter vias, the focal beam diameter ranges from 7 μm to 12 μm. The focus height is adjustable between 0 μm and 50 μm to control drilling depth. The laser operates at a pulse frequency of at least 500 MHz, with each burst containing two or more pulses and at least two bursts applied per via. The burst frequency is set to 100 kHz or higher to ensure rapid and consistent material removal. These parameters are selected to balance energy delivery, precision, and thermal effects, enabling efficient via formation with minimal collateral damage. The method is particularly useful in semiconductor manufacturing and microelectronics, where precise via drilling is critical for interconnects and packaging. The combination of these parameters ensures repeatable and high-quality via formation, addressing limitations in conventional laser drilling techniques.
13. The method of claim 10 , wherein the top diameter is about 10 μm or less.
This invention relates to a method for fabricating a microelectromechanical system (MEMS) device with a microcavity structure. The method addresses the challenge of precisely controlling the dimensions of microcavities, particularly the top diameter, to ensure optimal device performance in applications such as sensors, actuators, or optical components. The method involves forming a sacrificial layer on a substrate, followed by patterning and etching to create a cavity. A structural layer is then deposited over the sacrificial layer, and the sacrificial material is selectively removed to leave a hollow microcavity. The top diameter of the microcavity is controlled to be approximately 10 micrometers or less, ensuring precise structural integrity and functionality. The process may include additional steps such as surface treatment or material deposition to enhance the cavity's properties. The invention also describes variations where the microcavity is formed using different materials, such as polymers, metals, or semiconductors, depending on the application. The method ensures uniformity in cavity dimensions, which is critical for MEMS devices requiring high precision, such as pressure sensors or optical resonators. The controlled top diameter minimizes defects and improves reliability, making the method suitable for mass production of MEMS components.
14. The method of claim 10 further comprising removing the pre-etched mask layer from the substrate.
A method for semiconductor processing involves etching a substrate using a pre-etched mask layer to create a patterned structure. The pre-etched mask layer is initially formed on the substrate and contains predefined openings that define the areas to be etched. The substrate is then subjected to an etching process, such as plasma etching, through these openings to transfer the pattern into the underlying substrate material. After the etching step, the pre-etched mask layer is removed from the substrate to expose the patterned structure. The removal process may involve chemical etching, plasma ashing, or mechanical techniques, depending on the mask material. This method is particularly useful in semiconductor manufacturing where precise patterning of substrates is required for device fabrication. The pre-etched mask layer ensures accurate pattern transfer, while its subsequent removal prevents interference with subsequent processing steps. The technique is applicable to various substrate materials, including silicon, silicon dioxide, and other semiconductor compounds, and can be integrated into existing semiconductor fabrication workflows.
15. The method of claim 10 , wherein: the pre-etched mask layer comprises Al, Cu, W, Mo, Cr, or a combination thereof; the pre-etched mask layer has a height of 3 μm or less; or a combination thereof.
This invention relates to semiconductor manufacturing, specifically to methods of forming patterned structures using a pre-etched mask layer. The problem addressed is the need for precise and efficient patterning in semiconductor fabrication, particularly for high-aspect-ratio or fine-feature structures. Traditional masking techniques may suffer from limitations in resolution, material compatibility, or process complexity. The method involves using a pre-etched mask layer composed of materials such as aluminum (Al), copper (Cu), tungsten (W), molybdenum (Mo), chromium (Cr), or combinations thereof. These materials are selected for their etch resistance, thermal stability, and compatibility with semiconductor processes. The pre-etched mask layer has a height of 3 micrometers or less, enabling fine feature definition while maintaining structural integrity during subsequent etching steps. The mask layer is patterned and used to transfer the pattern into an underlying substrate, such as silicon or other semiconductor materials, through selective etching. The use of a pre-etched mask layer allows for improved pattern fidelity, reduced feature distortion, and enhanced process control compared to conventional masking techniques. The method is particularly useful in applications requiring high-precision patterning, such as advanced integrated circuits, microelectromechanical systems (MEMS), or nanoscale devices.
16. The method of claim 15 , wherein when the pre-etched mask layer comprises Mo or W, the method further comprises depositing a layer of copper on the pre-etched mask layer.
This invention relates to semiconductor fabrication, specifically to methods for forming patterns on substrates using pre-etched mask layers. The problem addressed is improving the durability and conductivity of mask layers during etching processes, particularly when using molybdenum (Mo) or tungsten (W) as mask materials. The method involves forming a pre-etched mask layer on a substrate, which serves as a protective layer during subsequent etching steps. When the mask layer is made of Mo or W, the method includes an additional step of depositing a copper layer on top of the pre-etched mask layer. This copper layer enhances the mask's structural integrity and electrical conductivity, preventing degradation during plasma etching or other high-energy processes. The pre-etched mask layer itself is patterned to define regions of the substrate that will be etched, ensuring precise control over the final structure. The copper deposition step is critical when using Mo or W, as these materials can suffer from poor adhesion or conductivity issues under certain etching conditions. By adding the copper layer, the mask remains stable throughout the process, allowing for high-precision etching without defects. This technique is particularly useful in advanced semiconductor manufacturing, where fine feature sizes and high aspect ratios require robust masking solutions. The method ensures reliable pattern transfer while maintaining the integrity of the underlying substrate.
17. The method of claim 10 , wherein the laser source is a femtosecond ultraviolet laser.
A method for precision material processing involves using a femtosecond ultraviolet laser to modify the surface or internal structure of a material. The laser emits ultra-short pulses, typically in the femtosecond range, with wavelengths in the ultraviolet spectrum. This type of laser is particularly effective for high-precision applications due to its ability to deliver concentrated energy in extremely short bursts, minimizing thermal damage to surrounding areas. The method leverages the laser's properties to achieve fine-scale modifications, such as micro-machining, surface texturing, or internal structural changes, without causing significant heat-affected zones. The femtosecond ultraviolet laser's short pulse duration and high peak intensity enable precise ablation or material removal, making it suitable for applications in semiconductor manufacturing, medical device fabrication, and advanced materials engineering. The technique may also include controlling pulse duration, wavelength, and energy density to optimize the processing outcome for specific materials. This approach enhances precision and reduces collateral damage compared to longer-pulse or infrared lasers, making it ideal for delicate or high-value materials.
18. The method of claim 10 , wherein the mask layer comprises Cr.
A method for fabricating a semiconductor device involves forming a mask layer on a substrate, where the mask layer includes chromium (Cr). The mask layer is used to selectively pattern underlying layers during semiconductor processing, such as etching or deposition. Chromium is chosen for its high etch resistance, thermal stability, and compatibility with semiconductor materials, ensuring precise and reliable patterning. The method may include depositing the Cr-containing mask layer using techniques like physical vapor deposition (PVD) or chemical vapor deposition (CVD), followed by lithographic patterning and etching to define features. The Cr mask layer may be removed after patterning using wet or dry etching processes, depending on the application. This approach enhances pattern fidelity and reduces defects, improving device yield and performance. The method is particularly useful in advanced semiconductor manufacturing, where precise feature definition is critical for high-density integrated circuits.
19. An apparatus for forming a blind via in a substrate, comprising: an optical device comprising: a galvanometer scanner having a plurality of reflecting facets and an axis of rotation; and a beam expander and collimator; a femtosecond laser beam source configured to direct electromagnetic radiation to the beam expander; a transport assembly configured to position the substrate to receive the electromagnetic radiation reflected from at least one of the reflecting facets of the galvanometer scanner; a height sensor configured to detect a height of one or more layers of the substrate; and a controller configured to: receive signals from the height sensor; and control the femtosecond beam laser source and the transport assembly based on signals received from the height sensor.
This invention relates to a system for forming blind vias in substrates using a femtosecond laser. Blind vias are holes that do not fully penetrate a substrate, often used in electronics manufacturing. The challenge is precisely controlling laser drilling to avoid damaging underlying layers while ensuring accurate depth and positioning. The apparatus includes a femtosecond laser source that emits electromagnetic radiation. A beam expander and collimator adjusts the beam properties before it reaches a galvanometer scanner. The scanner has multiple reflecting facets and an axis of rotation, allowing rapid and precise beam steering. The substrate is positioned by a transport assembly to receive the laser radiation reflected from the scanner. A height sensor measures the height of one or more substrate layers, providing real-time feedback. A controller processes these signals to adjust the laser source and transport assembly, ensuring the laser drills to the correct depth without damaging underlying structures. The system enables high-precision via formation in multi-layer substrates, critical for applications like printed circuit boards and microelectronics. The closed-loop control based on height sensing improves accuracy and repeatability.
20. The apparatus of claim 19 , wherein the femtosecond laser beam source is configured to emit a Gaussian laser beam profile.
A femtosecond laser system is used for precision material processing, such as micromachining or medical applications, where ultra-short pulses enable high-precision cutting or ablation with minimal thermal damage. A key challenge is achieving consistent and controlled beam characteristics to ensure repeatable processing results. The invention addresses this by incorporating a femtosecond laser beam source that emits a Gaussian laser beam profile. A Gaussian profile, characterized by a bell-shaped intensity distribution, provides a smooth and predictable energy distribution across the beam, which is critical for applications requiring uniform material removal or precise energy deposition. The system may also include beam shaping or focusing optics to further refine the beam's properties, ensuring optimal interaction with the target material. This configuration enhances processing accuracy and reduces unwanted thermal effects, making it suitable for high-precision applications in industries such as semiconductor manufacturing, medical device fabrication, and advanced materials research. The Gaussian profile ensures that the laser energy is concentrated where needed, minimizing collateral damage and improving overall processing efficiency.
21. The apparatus of claim 19 , further comprising a positioning sensor configured to detect a leading edge of the substrate.
A system for handling flexible substrates, such as thin films or webs, includes a positioning sensor that detects the leading edge of the substrate. The system is designed to improve precision in substrate alignment and processing, addressing challenges in accurately positioning flexible materials that are prone to misalignment due to their flexibility and movement during handling. The positioning sensor provides real-time detection of the substrate's leading edge, enabling adjustments to ensure proper alignment before further processing steps, such as cutting, coating, or laminating. This enhances production efficiency and reduces material waste by minimizing errors in substrate positioning. The sensor may use optical, mechanical, or other detection methods to reliably identify the substrate's edge, even in high-speed or automated manufacturing environments. The system may also include additional components, such as actuators or control mechanisms, to adjust the substrate's position based on the sensor's feedback. This ensures consistent and accurate processing, which is critical in industries like electronics manufacturing, packaging, and printing, where precise substrate alignment is essential for product quality and performance.
22. The apparatus of claim 21 , wherein the controller is further configured to: receive signals from the positioning sensor; and control the control the femtosecond beam laser source and the transport assembly based on signals received from the positioning sensor.
This invention relates to a precision laser processing system, specifically for femtosecond laser applications requiring high positional accuracy. The system addresses the challenge of maintaining precise alignment and control of a femtosecond laser beam during material processing, where even minor deviations can lead to processing errors. The apparatus includes a femtosecond beam laser source that generates ultra-short laser pulses for precise material modification. A transport assembly moves the laser beam or the target material with high precision, ensuring accurate positioning during processing. A positioning sensor monitors the relative position of the laser beam and the target material, providing real-time feedback. The controller integrates signals from the positioning sensor to dynamically adjust the laser source and transport assembly. This ensures that the laser beam remains accurately aligned with the target material, compensating for any positional drift or movement. The controller can modulate laser parameters, such as pulse energy or timing, and adjust the transport assembly's position to maintain processing accuracy. This closed-loop control system enhances the precision of femtosecond laser processing, making it suitable for applications requiring high positional accuracy, such as microfabrication, semiconductor manufacturing, or medical device production. The real-time feedback and adaptive control improve processing consistency and reduce errors caused by environmental or mechanical variations.
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July 14, 2020
January 25, 2022
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