In some embodiments, a semiconductor device is provided. The semiconductor device includes a pair of source/drain regions disposed in a semiconductor substrate, where the source/drain regions are laterally spaced. A gate electrode is disposed over the semiconductor substrate between the source/drain regions. Sidewall spacers are disposed over the semiconductor substrate on opposite sides of the gate electrode. A silicide blocking structure is disposed over the sidewalls spacers, where respective sides of the source/drain regions facing the gate electrode are spaced apart from outer sides of the sidewall spacers and are substantially aligned with outer sidewalls of the silicide blocking structure.
Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A semiconductor device, comprising: a pair of first source/drain regions disposed in a semiconductor substrate, wherein the first source/drain regions are laterally spaced; a first gate electrode disposed over the semiconductor substrate and between the first source/drain regions; a pair of second source/drain regions disposed in the semiconductor substrate and spaced from the pair of first source/drain regions, wherein the second source/drain regions are laterally spaced; a second gate electrode disposed over the semiconductor substrate and between the second source/drain regions; a first silicide structure disposed over one of the first source/drain regions; a second silicide structure disposed over one of the second source/drain regions; and a silicide blocking structure disposed over the semiconductor substrate, wherein the silicide blocking structure comprises a first portion that extends vertically along a side of the first gate electrode, wherein the silicide blocking structure comprises a second portion that extends continuously from a first sidewall of the one of the first source/drain regions to a second sidewall of the one of the second source/drain regions, wherein the second portion of the silicide blocking structure has a third sidewall that faces the first portion of the silicide blocking structure, wherein the third sidewall extends vertically from an upper surface of the second portion of the silicide blocking structure to a lower surface of the second portion of the silicide blocking structure, and wherein a portion of the third sidewall is disposed vertically between an upper portion of the first silicide structure and the semiconductor substrate.
The semiconductor device is designed to improve integration and performance in advanced semiconductor manufacturing, particularly addressing challenges in silicide formation and gate electrode isolation. The device includes two pairs of source/drain regions spaced apart in a semiconductor substrate, with each pair having a gate electrode disposed between them. A first silicide structure is formed over one of the first source/drain regions, and a second silicide structure is formed over one of the second source/drain regions. A silicide blocking structure is integrated into the device to prevent unintended silicide formation. This structure has a first portion extending vertically along the side of the first gate electrode and a second portion that spans continuously from one sidewall of the first source/drain region to the corresponding sidewall of the second source/drain region. The second portion includes a vertical sidewall facing the first portion, ensuring proper isolation and preventing silicide formation in unwanted areas. The design ensures that part of this vertical sidewall is positioned between the upper portion of the first silicide structure and the substrate, maintaining electrical isolation and structural integrity. This configuration enhances device reliability and performance by controlling silicide formation and gate electrode interactions.
2. The semiconductor device of claim 1 , further comprising: a first isolation structure disposed in the semiconductor substrate and between the one of the first source/drain regions and the one of the second source/drain regions, wherein the second portion of the silicide blocking structure extends from the first sidewall to the second sidewall by extending continuously over the first isolation structure.
This invention relates to semiconductor devices, specifically addressing challenges in integrating silicide blocking structures with isolation regions in advanced semiconductor manufacturing. The device includes a semiconductor substrate with first and second source/drain regions, where a silicide blocking structure is formed over these regions to prevent unwanted silicide formation. The blocking structure has a first portion covering the first source/drain region and a second portion extending laterally to cover a second source/drain region. A key feature is the inclusion of an isolation structure between the first and second source/drain regions, with the second portion of the silicide blocking structure extending continuously over this isolation structure. This continuous extension ensures uniform silicide blocking across both active regions and the intervening isolation, preventing short circuits or leakage while maintaining process simplicity. The isolation structure may be a shallow trench isolation (STI) or similar dielectric barrier, and the silicide blocking structure is typically an insulating material like silicon nitride. This design is particularly useful in high-density semiconductor devices where precise control of silicide formation is critical to device performance and reliability.
3. The semiconductor device of claim 2 , further comprising: a second isolation structure disposed in the semiconductor substrate and spaced from the first isolation structure, wherein the second isolation structure is disposed between the one of the first source/drain regions and the one of the second source/drain regions, and wherein the second portion of the silicide blocking structure extends from the first sidewall to the second sidewall by extending continuously over both the first isolation structure and the second isolation structure.
A semiconductor device includes a semiconductor substrate with a first isolation structure and a second isolation structure spaced apart from each other. The device also includes a gate structure disposed over the semiconductor substrate, with a first source/drain region and a second source/drain region formed in the substrate adjacent to the gate structure. A silicide blocking structure is positioned over the gate structure and extends laterally to cover portions of the first and second source/drain regions. The silicide blocking structure has a first portion covering the gate structure and a second portion extending continuously over both the first and second isolation structures, connecting the first and second source/drain regions. The second isolation structure is positioned between one of the first source/drain regions and one of the second source/drain regions, ensuring electrical isolation while maintaining the continuous coverage of the silicide blocking structure. This configuration prevents unintended silicide formation in specific regions, improving device performance and reliability. The device is particularly useful in integrated circuits where precise control of silicide formation is critical.
4. The semiconductor device of claim 1 , wherein the upper surface of the second portion of the silicide blocking structure is substantially planar and extends continuously from the first sidewall to the second sidewall.
A semiconductor device includes a silicide blocking structure with a first portion and a second portion. The first portion is positioned on a substrate and has a first sidewall and a second sidewall. The second portion extends from the first portion and has an upper surface that is substantially planar and extends continuously from the first sidewall to the second sidewall. The silicide blocking structure prevents silicide formation in specific regions of the substrate, ensuring proper electrical isolation and functionality in integrated circuits. The planar and continuous upper surface of the second portion enhances uniformity and reliability in semiconductor manufacturing processes. This design is particularly useful in advanced semiconductor devices where precise control of silicide formation is critical to device performance and yield. The structure may be integrated into transistors, memory cells, or other semiconductor components to prevent unintended silicide formation, which could otherwise degrade electrical properties or cause short circuits. The continuous and planar upper surface ensures consistent material deposition and etching processes, reducing defects and improving manufacturing efficiency. This innovation addresses challenges in semiconductor fabrication where silicide formation must be selectively controlled to maintain device integrity and performance.
5. The semiconductor device of claim 1 , wherein: the silicide blocking structure comprises a third portion that extends vertically along a side of the second gate electrode; and the second portion of the silicide blocking structure is disposed between the first portion of the silicide blocking structure and the third portion of the silicide blocking structure.
This invention relates to semiconductor devices, specifically to structures that prevent unwanted silicide formation during manufacturing. The problem addressed is the unintended formation of silicide on certain regions of a semiconductor device, which can degrade performance or cause short circuits. The invention provides a silicide blocking structure with multiple portions to selectively block silicide formation in specific areas while allowing it in others. The device includes a first gate electrode and a second gate electrode, each with adjacent source/drain regions. A silicide blocking structure is formed over these regions to prevent silicide formation where it is not desired. The blocking structure has a first portion covering a first source/drain region adjacent to the first gate electrode, a second portion covering a second source/drain region adjacent to the second gate electrode, and a third portion extending vertically along a side of the second gate electrode. The second portion is positioned between the first and third portions, ensuring precise control over silicide formation. This configuration allows silicide to form only in desired areas, improving device reliability and performance. The vertical extension of the third portion helps prevent lateral silicide growth, further enhancing isolation between conductive regions. The invention is particularly useful in advanced semiconductor manufacturing where precise control of silicide formation is critical.
6. The semiconductor device of claim 5 , wherein: both the first silicide structure and the second silicide structure are disposed between the first portion of the silicide blocking structure and the third portion of the silicide blocking structure; and the second portion of the silicide blocking structure is disposed between the first silicide structure and the second silicide structure.
This invention relates to semiconductor devices, specifically those incorporating silicide structures and silicide blocking structures to control electrical connectivity in integrated circuits. The problem addressed is the need for precise placement of silicide regions to ensure proper electrical connections while preventing unintended short circuits or resistance variations in semiconductor devices. The semiconductor device includes a substrate with a first silicide structure and a second silicide structure formed on its surface. A silicide blocking structure is positioned to selectively block silicide formation in certain regions. The blocking structure has at least three portions: a first portion adjacent to the first silicide structure, a second portion between the first and second silicide structures, and a third portion adjacent to the second silicide structure. The first and second silicide structures are both located between the first and third portions of the blocking structure, while the second portion of the blocking structure is positioned directly between the two silicide structures. This configuration ensures that silicide formation is restricted in the second portion, preventing electrical shorting between the two silicide structures while allowing controlled connectivity elsewhere. The design is particularly useful in advanced semiconductor manufacturing where precise control of silicide regions is critical for device performance and reliability.
7. The semiconductor device of claim 1 , further comprising: a first sidewall spacer disposed over the semiconductor substrate and extending vertically along the side of the first gate electrode, wherein the first sidewall spacer is disposed between the first gate electrode and the first portion of the silicide blocking structure.
This invention relates to semiconductor devices, specifically to structures that improve performance and reliability in integrated circuits. The problem addressed is the unintended formation of silicide in regions where it is not desired, which can degrade device performance and cause electrical shorts. The invention provides a solution by incorporating a silicide blocking structure that prevents silicide formation in specific areas while allowing it in others, ensuring proper device functionality. The semiconductor device includes a semiconductor substrate with a first gate electrode formed on it. A first sidewall spacer is disposed over the substrate and extends vertically along the side of the first gate electrode. This spacer is positioned between the first gate electrode and a first portion of a silicide blocking structure. The silicide blocking structure is designed to block silicide formation in certain regions, such as source/drain extensions, while allowing it in other areas, such as the gate electrode or source/drain regions. The sidewall spacer ensures proper alignment and spacing, preventing silicide from forming where it would interfere with device operation. This configuration improves device reliability and performance by controlling silicide formation precisely.
8. The semiconductor device of claim 7 , further comprising: a second sidewall spacer disposed over the semiconductor substrate and extending vertically along a side of the second gate electrode, wherein the second sidewall spacer is disposed between the second gate electrode and a third portion of the silicide blocking structure, wherein the third portion of the silicide blocking structure extends vertically along a side of the second sidewall spacer, and wherein the second portion of the silicide blocking structure is disposed between the first portion of the silicide blocking structure and the third portion of the silicide blocking structure.
The semiconductor device relates to advanced transistor structures, specifically addressing challenges in integrating silicide blocking structures with sidewall spacers to prevent unwanted silicide formation while maintaining electrical connectivity. In modern semiconductor devices, silicide regions are used to reduce contact resistance, but uncontrolled silicide formation can degrade device performance. The invention describes a semiconductor device with a second sidewall spacer disposed over a semiconductor substrate, extending vertically along a side of a second gate electrode. The second sidewall spacer is positioned between the second gate electrode and a third portion of a silicide blocking structure, which extends vertically along the side of the second sidewall spacer. The silicide blocking structure includes multiple portions: a first portion adjacent to the gate electrode, a second portion between the first and third portions, and the third portion adjacent to the sidewall spacer. This configuration ensures that the silicide blocking structure effectively prevents silicide formation in critical regions while allowing proper electrical contact in other areas. The device improves transistor reliability and performance by precisely controlling silicide formation through the structured arrangement of sidewall spacers and silicide blocking layers.
9. A semiconductor device, comprising: a first source/drain region and a second source/drain region disposed in a semiconductor substrate, wherein the first source/drain region is laterally spaced from the second source/drain region; a gate electrode disposed over the semiconductor substrate and between the first source/drain region and the second source/drain region; a first isolation structure disposed in the semiconductor substrate, wherein the first source/drain region is disposed between the first isolation structure and the gate electrode, and wherein the first isolation structure has a first sidewall and a second sidewall that is opposite the first sidewall; a first silicide structure disposed over the first source/drain region, wherein the first silicide structure is disposed between the first isolation structure and the gate electrode; and a first silicide blocking structure disposed over the semiconductor substrate and the first isolation structure, wherein the first silicide blocking structure extends continuously from the first sidewall to at least the second sidewall, wherein the first silicide blocking structure has a third sidewall that faces the gate electrode, wherein the third sidewall extends vertically from a first upper surface of the first silicide blocking structure to a lower surface of the first silicide blocking structure, and wherein a portion of the third sidewall is disposed vertically between an uppermost surface of the first silicide structure and the semiconductor substrate.
This invention relates to semiconductor devices, specifically addressing challenges in silicide formation and isolation in integrated circuits. The device includes a semiconductor substrate with a first and second source/drain regions laterally spaced apart. A gate electrode is positioned between these regions, forming a transistor structure. A first isolation structure, such as a shallow trench isolation (STI), is adjacent to the first source/drain region, separating it from other active regions. A first silicide structure is formed over the first source/drain region to reduce contact resistance. A critical feature is the first silicide blocking structure, which covers the isolation structure and extends continuously from one sidewall to the opposite sidewall. This structure prevents unwanted silicide formation on the isolation region while allowing silicide formation on the source/drain region. The blocking structure has a vertical sidewall facing the gate electrode, ensuring proper alignment and preventing silicide encroachment. The vertical sidewall extends from the upper surface of the blocking structure down to its lower surface, with part of this sidewall positioned above the silicide structure but below the uppermost surface of the silicide. This design ensures reliable electrical isolation while maintaining low-resistance contacts. The invention improves semiconductor device performance by controlling silicide formation and preventing short circuits or leakage paths.
10. The semiconductor device of claim 9 , further comprising: a second silicide blocking structure disposed over the semiconductor substrate, wherein the second silicide blocking structure extends vertically along a first side of the gate electrode, and wherein the first silicide structure contacts the third sidewall of the first silicide blocking structure, and wherein the second silicide blocking structure contacts a fourth sidewall of the first silicide structure.
This invention relates to semiconductor devices, specifically to structures that prevent unwanted silicide formation during fabrication. The problem addressed is the unintended formation of silicide on certain regions of a semiconductor device, which can lead to electrical shorts or other performance issues. The invention provides a solution by incorporating multiple silicide blocking structures to precisely control silicide formation. The semiconductor device includes a gate electrode formed over a semiconductor substrate, with a first silicide blocking structure positioned adjacent to the gate electrode. This first structure has a first sidewall that faces the gate electrode and a second sidewall that faces away from it. A first silicide structure is formed on the substrate, contacting the second sidewall of the first silicide blocking structure. Additionally, a second silicide blocking structure is disposed over the substrate, extending vertically along one side of the gate electrode. This second structure contacts a fourth sidewall of the first silicide structure, ensuring that silicide formation is confined to specific regions. The arrangement prevents silicide from forming where it could cause electrical interference, improving device reliability and performance. The structures are designed to work together to block silicide formation in unwanted areas while allowing it in desired regions, ensuring proper device functionality.
11. The semiconductor device of claim 10 , wherein the second silicide blocking structure has a second upper surface that is substantially co-planar with the first upper surface.
A semiconductor device includes a substrate with a first region and a second region, where the first region contains a first transistor and the second region contains a second transistor. The first transistor has a first gate structure with a first silicide blocking structure on its upper surface, and the second transistor has a second gate structure with a second silicide blocking structure on its upper surface. The second silicide blocking structure has an upper surface that is substantially co-planar with the upper surface of the first silicide blocking structure. The first and second silicide blocking structures prevent silicide formation on the gate structures, ensuring proper electrical isolation. The transistors may be part of a memory cell, such as a static random access memory (SRAM) cell, where precise control of silicide formation is critical for reliable operation. The co-planar alignment of the silicide blocking structures ensures uniform processing and consistent electrical performance across the device. This design helps prevent short circuits or leakage currents that could arise from unintended silicide formation, particularly in high-density integrated circuits where precise feature alignment is essential. The semiconductor device may also include additional structures, such as source/drain regions, dielectric layers, and interconnects, to form a functional integrated circuit.
12. The semiconductor device of claim 9 , further comprising: a second isolation structure disposed in the semiconductor substrate, wherein the gate electrode is disposed between the first isolation structure and the second isolation structure, and wherein the second isolation structure has a fifth sidewall and a sixth sidewall that is opposite the fifth sidewall; a second silicide structure disposed over the second source/drain region, wherein the second silicide structure is disposed between the second isolation structure and the gate electrode; and a third silicide blocking structure disposed over the semiconductor substrate and the second isolation structure, wherein the third silicide blocking structure extends continuously from the fifth sidewall to at least the sixth sidewall.
This invention relates to semiconductor devices, specifically addressing challenges in integrating silicide structures with isolation regions in advanced semiconductor manufacturing. The device includes a semiconductor substrate with a gate electrode and source/drain regions adjacent to the gate. A first isolation structure is positioned adjacent to the gate electrode, and a second isolation structure is positioned on the opposite side of the gate electrode. The second isolation structure has two sidewalls, and a second silicide structure is formed over the source/drain region between the second isolation structure and the gate electrode. A third silicide blocking structure is deposited over the semiconductor substrate and the second isolation structure, extending continuously from one sidewall of the second isolation structure to at least the opposite sidewall. This configuration ensures proper silicide formation while preventing unwanted silicide growth over the isolation regions, improving device performance and reliability. The silicide blocking structure acts as a barrier, preventing silicide from forming on unintended areas, which is critical for maintaining electrical isolation and reducing leakage currents. The invention is particularly relevant to semiconductor devices requiring precise control over silicide formation in the presence of multiple isolation structures.
13. The semiconductor device of claim 12 , further comprising: a second silicide blocking structure disposed over the semiconductor substrate, wherein the second silicide blocking structure extends vertically along a first side of the gate electrode, and wherein the first silicide structure contacts the third sidewall of the first silicide blocking structure, and wherein the second silicide blocking structure contacts a fourth sidewall of the first silicide structure; and a fourth silicide blocking structure disposed over the semiconductor substrate, wherein the fourth silicide blocking structure extends vertically along a second side of the gate electrode opposite the first side, and wherein the fourth silicide blocking structure contacts a seventh sidewall of the second silicide structure, and wherein the third silicide blocking structure contacts an eighth sidewall of the second silicide blocking structure opposite the seventh sidewall.
This invention relates to semiconductor devices with improved silicide blocking structures to prevent unwanted silicide formation during manufacturing. The problem addressed is uncontrolled silicide formation, which can cause electrical shorts or other defects in integrated circuits. The device includes a semiconductor substrate with a gate electrode and multiple silicide blocking structures positioned to precisely control silicide formation regions. A first silicide blocking structure is disposed over the substrate, with a first silicide structure contacting one of its sidewalls. A second silicide blocking structure extends vertically along one side of the gate electrode and contacts a sidewall of the first silicide structure. A third silicide structure is positioned adjacent to the second silicide blocking structure. A fourth silicide blocking structure extends vertically along the opposite side of the gate electrode and contacts a sidewall of a second silicide structure. The third silicide blocking structure contacts the fourth silicide blocking structure, ensuring proper isolation between conductive regions. This configuration allows selective silicide formation only in designated areas, improving device reliability and performance. The structures are arranged to prevent lateral silicide growth, ensuring precise control over conductive pathways in the semiconductor device.
14. The semiconductor device of claim 13 , wherein: the second silicide blocking structure has a second upper surface; the third silicide blocking structure has a third upper surface; the fourth silicide blocking structure has a fourth upper surface; and the first upper surface, the second upper surface, the third upper surface, and the fourth upper surface are substantially co-planar.
This invention relates to semiconductor devices, specifically addressing the challenge of forming co-planar silicide blocking structures to prevent unwanted silicide formation on certain regions of a semiconductor substrate. The device includes multiple silicide blocking structures, each with distinct upper surfaces that are aligned to be substantially co-planar. These structures are positioned to selectively block silicide formation on specific areas of the substrate while allowing silicide formation on other regions. The co-planar alignment ensures uniform processing and reliable device performance. The invention is particularly useful in advanced semiconductor manufacturing where precise control over silicide formation is critical to device functionality and yield. The silicide blocking structures are formed using materials and processes that ensure their upper surfaces remain level with each other, preventing misalignment or uneven silicide formation. This design helps maintain consistent electrical characteristics and reduces defects in integrated circuits. The invention is applicable to various semiconductor devices, including transistors and memory cells, where selective silicide formation is required to optimize performance and reliability.
15. A semiconductor device, comprising: a first source/drain region and a second source/drain region disposed in a semiconductor substrate, wherein the first source/drain region is laterally spaced from the second source/drain region; a first gate electrode disposed over the semiconductor substrate and between the first source/drain region and the second source/drain region; a first sidewall spacer disposed over the semiconductor substrate and along a first sidewall of the first gate electrode; a second sidewall spacer disposed over the semiconductor substrate and along a second sidewall of the first gate electrode opposite the first sidewall; a first silicide structure disposed over the first source/drain region; a second silicide structure disposed over the second source/drain region; a first silicide blocking structure disposed over the semiconductor substrate, wherein a first portion of the first silicide blocking structure extends vertically from the semiconductor substrate along an outer sidewall of the first sidewall spacer, wherein a second portion of the first silicide blocking structure extends laterally a first distance from the first portion to the first silicide structure, and wherein the first portion has a first uppermost surface disposed over a second uppermost surface of the second portion; and a second silicide blocking structure disposed over the semiconductor substrate, wherein a third portion of the second silicide blocking structure extends vertically from the semiconductor substrate along an outer sidewall of the second sidewall spacer, wherein a fourth portion of the second silicide blocking structure extends laterally the first distance from the third portion to the second silicide structure, and wherein the third portion has a third uppermost surface disposed over a fourth uppermost surface of the fourth portion, wherein the fourth portion of the second silicide structure has a third sidewall that extends vertically from the fourth uppermost surface to a lower surface of the fourth portion of the second silicide blocking structure, and wherein a portion of the third sidewall is disposed vertically between an upper surface of the second silicide structure and the semiconductor substrate.
This invention relates to semiconductor devices, specifically addressing challenges in silicide formation and integration in advanced transistor structures. The device includes a semiconductor substrate with first and second source/drain regions spaced apart, and a gate electrode positioned between them. Sidewall spacers are formed on opposing sides of the gate electrode, with silicide structures formed over the source/drain regions to improve electrical contact. To prevent unwanted silicide formation on unintended areas, silicide blocking structures are implemented. These structures have vertical portions extending along the outer sidewalls of the sidewall spacers and lateral portions extending toward the silicide structures. The vertical portions are elevated above the lateral portions, creating a stepped profile. The lateral portions of the blocking structures extend a defined distance from the vertical portions to the silicide structures, ensuring precise silicide formation while preventing shorting or leakage. The design ensures reliable silicide integration in advanced semiconductor devices, particularly in finFET or other high-density transistor architectures where precise control of silicide regions is critical. The stepped configuration of the blocking structures allows for self-aligned silicide formation while protecting adjacent regions from unintended silicide growth.
16. The semiconductor device of claim 15 , further comprising: a third source/drain region and a fourth source/drain region disposed in the semiconductor substrate, wherein the third source/drain region is laterally spaced from the fourth source/drain region, and wherein both the third and fourth source/drain regions are laterally spaced from both the first and second source/drain regions; a second gate electrode disposed over the semiconductor substrate and between the third source/drain region and the fourth source/drain region; a third sidewall spacer disposed over the semiconductor substrate and along a fourth sidewall of the second gate electrode; a fourth sidewall spacer disposed over the semiconductor substrate and along a fifth sidewall of the second gate electrode opposite the fourth sidewall; a third silicide structure disposed over the third source/drain region and spaced a second distance from the second gate electrode, wherein the second distance is less than the first distance; and a fourth silicide structure disposed over the fourth source/drain region and spaced the second distance from the second gate electrode.
This invention relates to semiconductor devices, specifically to an improved structure for integrated circuits with multiple transistors. The problem addressed is optimizing the layout and performance of transistors in a semiconductor substrate, particularly concerning source/drain regions and their associated silicide structures. The device includes a semiconductor substrate with first and second source/drain regions spaced apart, a first gate electrode between them, and first and second sidewall spacers along the sidewalls of the first gate electrode. A first silicide structure is disposed over the first source/drain region, spaced a first distance from the first gate electrode. Additionally, the device includes a third and fourth source/drain region spaced apart and laterally separated from the first and second source/drain regions. A second gate electrode is positioned between the third and fourth source/drain regions, with third and fourth sidewall spacers along its sidewalls. A third and fourth silicide structure are disposed over the third and fourth source/drain regions, respectively, each spaced a second distance from the second gate electrode, where the second distance is less than the first distance. This configuration allows for optimized electrical connectivity and performance in multi-transistor semiconductor devices.
17. The semiconductor device of claim 15 , wherein: the first portion of the first silicide blocking structure has a sixth sidewall disposed between the first sidewall of the first gate electrode and the second sidewall of the first gate electrode; and the third portion of the second silicide blocking structure has a seventh sidewall disposed between the first sidewall of the first gate electrode and the second sidewall of the first gate electrode.
This invention relates to semiconductor devices, specifically to structures that prevent unwanted silicide formation during manufacturing. The problem addressed is the unintended formation of silicide on certain regions of a semiconductor device, which can degrade performance or cause short circuits. The solution involves a semiconductor device with multiple silicide blocking structures that selectively prevent silicide formation in specific areas. The device includes a first gate electrode with opposing sidewalls and a first silicide blocking structure adjacent to the gate. The first silicide blocking structure has a first portion with a sixth sidewall positioned between the gate's sidewalls. A second silicide blocking structure is also present, with a third portion having a seventh sidewall also positioned between the gate's sidewalls. These structures ensure that silicide only forms where intended, improving device reliability and performance. The silicide blocking structures are strategically placed to block silicide formation on critical regions while allowing it on others. The sixth and seventh sidewalls of the blocking structures are positioned between the gate's sidewalls, ensuring precise control over silicide formation. This selective blocking prevents electrical shorts and enhances the device's overall functionality. The invention is particularly useful in advanced semiconductor manufacturing where precise control of silicide formation is essential.
18. The semiconductor device of claim 15 , further comprising: a gate dielectric disposed between the semiconductor substrate and the first gate electrode, wherein the first silicide blocking structure contacts the first sidewall spacer, the gate dielectric, and the first gate electrode.
This invention relates to semiconductor devices, specifically to structures that prevent unwanted silicide formation in transistor regions. The problem addressed is the unintended formation of silicide in areas where it should not be present, which can degrade device performance. The invention provides a semiconductor device with a silicide blocking structure that selectively prevents silicide formation in specific regions while allowing it in others. The device includes a semiconductor substrate with a first gate electrode formed over it. A gate dielectric layer is disposed between the substrate and the first gate electrode. A first sidewall spacer is positioned adjacent to the first gate electrode. The key feature is a first silicide blocking structure that contacts the first sidewall spacer, the gate dielectric, and the first gate electrode. This blocking structure ensures that silicide does not form in regions where it would interfere with device operation, such as near the gate electrode or gate dielectric. The structure may also include a second gate electrode and a second silicide blocking structure, where the second blocking structure contacts a second sidewall spacer, the gate dielectric, and the second gate electrode. This dual structure allows for selective silicide formation in different regions of the device, improving overall performance and reliability. The invention is particularly useful in advanced semiconductor manufacturing where precise control of silicide formation is critical.
19. The semiconductor device of claim 15 , wherein: the second uppermost surface extends from the first portion of the first silicide blocking structure to an outer sidewall of the first silicide structure; the fourth uppermost surface extends from the third portion of the second silicide blocking structure to an outer sidewall of the second silicide structure; the second uppermost surface is substantially planar; and the fourth uppermost surface is substantially planar.
This invention relates to semiconductor devices, specifically addressing the formation of silicide structures and silicide blocking structures to improve device performance and reliability. The device includes a substrate with a first silicide structure and a second silicide structure formed on respective conductive regions. A first silicide blocking structure is positioned adjacent to the first silicide structure, and a second silicide blocking structure is positioned adjacent to the second silicide structure. The first silicide blocking structure has a first portion that extends partially over the first silicide structure, while the second silicide blocking structure has a third portion that extends partially over the second silicide structure. The device further includes a second uppermost surface that extends from the first portion of the first silicide blocking structure to an outer sidewall of the first silicide structure, and a fourth uppermost surface that extends from the third portion of the second silicide blocking structure to an outer sidewall of the second silicide structure. Both the second and fourth uppermost surfaces are substantially planar, ensuring uniform and controlled silicide formation. This configuration prevents unwanted silicide growth while maintaining electrical connectivity, improving device reliability and performance. The planar surfaces facilitate precise alignment and reduce defects during subsequent processing steps.
20. The semiconductor device of claim 19 , wherein the fourth uppermost surface and the third uppermost surface are substantially co-planar.
A semiconductor device includes a substrate with multiple stacked layers forming a three-dimensional structure. The device has a first uppermost surface and a second uppermost surface, where the second uppermost surface is positioned above the first uppermost surface. A third uppermost surface is formed by a conductive structure, such as a metal line or via, extending vertically through the stacked layers. The conductive structure is electrically connected to an underlying circuit element, such as a transistor or resistor, within the substrate. The device also includes a fourth uppermost surface, which is part of an insulating layer surrounding the conductive structure. The fourth uppermost surface and the third uppermost surface are substantially co-planar, ensuring a flat surface for subsequent processing steps. This configuration improves electrical connectivity and manufacturing yield by reducing surface irregularities. The device may be used in advanced integrated circuits, such as memory chips or logic devices, where precise alignment and planarization of conductive features are critical for performance and reliability. The co-planar arrangement simplifies the integration of multiple conductive layers while maintaining structural integrity.
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November 25, 2019
February 15, 2022
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