A gas introduction structure includes: a gas introduction pipe inserted in a process chamber; and a discharge part covering an end portion of the gas introduction pipe at a side of the process chamber, and configured to discharge a gas supplied to the gas introduction pipe into the process chamber, wherein the discharge part includes a porous portion formed of a porous body, and a dense portion disposed at a location closer to a leading end of the discharge part than the porous portion and having a porosity lower than that of the porous portion.
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1. A gas introduction structure comprising: a gas introduction pipe inserted in a process chamber; and a discharge part covering an end portion of the gas introduction pipe at a side of the process chamber, and configured to discharge a gas supplied to the gas introduction pipe into the process chamber, wherein the discharge part comprises an installed porous portion formed of a porous body, and a dense portion disposed at a location closer to a leading end of the discharge part than the porous portion and having a porosity lower than that of the porous portion, wherein the porous body is formed of a quartz-glass porous body, wherein the dense portion is formed of a densified quartz-glass porous body obtained by sintering the quartz-glass porous body, and wherein, after installing the quartz-glass porous body covering the end portion of the gas introduction pipe, and then sintering a part of a leading end portion of the quartz-glass porous body, whereby a non-sintered part forms the porous portion and a sintered part forms the dense portion.
This invention relates to a gas introduction structure for semiconductor processing, addressing the need for uniform gas distribution in a process chamber. The structure includes a gas introduction pipe inserted into the process chamber and a discharge part covering the pipe's end. The discharge part has a porous portion made of a quartz-glass porous body and a dense portion with lower porosity, positioned closer to the leading end. The porous portion allows gas diffusion, while the dense portion ensures controlled discharge. The quartz-glass porous body is partially sintered to create the dense portion, with the unsintered part remaining porous. This design improves gas flow uniformity, preventing uneven deposition or etching in semiconductor fabrication. The sintering process creates a gradient in porosity, enhancing gas distribution efficiency. The structure is particularly useful in chemical vapor deposition (CVD) or etching systems where precise gas delivery is critical. The use of quartz-glass ensures compatibility with high-temperature and corrosive environments common in semiconductor processing.
2. The gas introduction structure of claim 1 , wherein the dense portion is formed of a porous body having a porosity lower than that of the porous portion.
A gas introduction structure is designed to control the flow of gas into a system, particularly in applications where precise gas distribution is critical, such as in fuel cells, chemical reactors, or filtration systems. The structure addresses the problem of uneven gas flow, which can lead to inefficiencies or performance degradation. The invention includes a porous portion that allows gas to pass through and a dense portion that restricts flow. The dense portion is made of a porous body with a lower porosity than the porous portion, ensuring controlled gas introduction while maintaining structural integrity. This design prevents excessive gas leakage or uneven distribution, improving system efficiency and longevity. The dense portion's reduced porosity acts as a barrier, regulating gas flow while allowing sufficient permeability for the intended application. The combination of these features ensures optimal gas distribution, reducing the risk of clogging or uneven pressure drops. This structure is particularly useful in environments where precise gas management is essential for performance and reliability.
3. The gas introduction structure of claim 2 , wherein a length of the dense portion is smaller than a length of the porous portion.
A gas introduction structure is designed for controlled gas flow in applications such as chemical processing, semiconductor manufacturing, or medical devices. The structure includes a dense portion and a porous portion, where the dense portion has a smaller length than the porous portion. The dense portion is typically a solid or non-porous material that restricts gas flow, while the porous portion allows gas to pass through at a controlled rate. The length difference ensures that the gas flow is regulated precisely, preventing excessive or uneven distribution. This design is useful in systems requiring precise gas delivery, such as gas sensors, filters, or reactors, where maintaining consistent flow rates is critical. The structure may be integrated into larger systems where gas introduction must be carefully managed to avoid contamination, pressure fluctuations, or inefficiencies. The porous portion can be made from materials like sintered metal, ceramic, or polymer, while the dense portion may consist of metal, glass, or other non-porous materials. The overall design improves gas flow control, system reliability, and operational safety.
4. The gas introduction structure of claim 3 , wherein an outer diameter of the dense portion is smaller than an outer diameter of the porous portion.
A gas introduction structure is designed for controlled gas distribution in applications such as chemical processing, semiconductor manufacturing, or combustion systems. The structure addresses the challenge of achieving uniform gas flow while maintaining structural integrity and preventing clogging. The invention features a porous portion and a dense portion, where the dense portion has a smaller outer diameter than the porous portion. The porous portion allows gas to permeate through its material, while the dense portion is impermeable, ensuring directed flow. The size difference between the two portions optimizes gas diffusion and structural stability. The porous portion may be made of a sintered material, such as metal or ceramic, while the dense portion may be a solid metal or alloy. This design prevents gas leakage and ensures precise control over flow rates. The structure can be integrated into larger systems, such as gas distribution manifolds or reactors, to enhance efficiency and reliability. The invention improves upon existing designs by providing a more compact and effective solution for gas introduction, reducing maintenance and operational costs.
5. The gas introduction structure of claim 4 , wherein a length of the porous portion is 25 mm to 40 mm.
This invention relates to a gas introduction structure for a semiconductor processing apparatus, specifically addressing the need for precise and uniform gas distribution in processes like chemical vapor deposition (CVD) or etching. The structure includes a porous portion designed to evenly disperse gas into a reaction chamber, ensuring consistent processing conditions. The porous portion has a length between 25 mm and 40 mm, optimizing gas flow and minimizing turbulence. The structure may also feature a gas supply channel connected to the porous portion, allowing controlled gas introduction. Additionally, the porous portion may be integrated with a gas diffusion plate or a showerhead to further enhance uniformity. The invention aims to improve process stability and yield by maintaining uniform gas distribution across the substrate surface, addressing issues like uneven deposition or etching that arise from inconsistent gas flow. The specified length range for the porous portion ensures efficient gas dispersion while preventing clogging or excessive pressure drop. This design is particularly useful in semiconductor manufacturing, where precise gas delivery is critical for high-quality device fabrication.
6. The gas introduction structure of claim 1 , wherein the dense portion is formed of a same material as that of the gas introduction pipe.
A gas introduction structure is designed to control the flow of gas in industrial or laboratory settings, particularly where precise gas distribution is required. The structure includes a gas introduction pipe and a dense portion that regulates gas flow. The dense portion is formed from the same material as the gas introduction pipe, ensuring material compatibility and reducing potential weaknesses or failures due to material mismatches. This uniformity in material composition enhances structural integrity and durability, preventing issues such as corrosion, cracking, or deformation that could arise from dissimilar materials. The dense portion may be a separate component integrated into the pipe or a region of the pipe itself, depending on the design. By maintaining material consistency, the structure ensures reliable gas flow control while minimizing maintenance and operational risks. This design is particularly useful in applications where gas purity, pressure stability, or long-term performance is critical, such as in chemical processing, semiconductor manufacturing, or medical gas systems. The use of the same material for both the pipe and the dense portion simplifies manufacturing and reduces costs while improving overall system reliability.
7. The gas introduction structure of claim 1 , wherein a length of the dense portion is smaller than a length of the porous portion.
This invention relates to a gas introduction structure used in semiconductor processing or other applications requiring precise gas delivery. The structure addresses the challenge of uniformly distributing gas while minimizing flow resistance and ensuring efficient heat transfer. The structure comprises a dense portion and a porous portion, where the dense portion has a smaller length than the porous portion. The dense portion is designed to control gas flow at the inlet, while the porous portion facilitates uniform distribution of the gas downstream. The porous portion, being longer, allows for greater surface area contact with the gas, enhancing diffusion and reducing turbulence. The dense portion's shorter length ensures minimal pressure drop at the inlet, improving overall system efficiency. This design is particularly useful in applications where precise gas flow control and uniform distribution are critical, such as in chemical vapor deposition (CVD) or gas diffusion layers in fuel cells. The invention optimizes gas delivery by balancing flow resistance and distribution efficiency through the length differential between the dense and porous portions.
8. The gas introduction structure of claim 1 , wherein an outer diameter of the dense portion is smaller than an outer diameter of the porous portion.
A gas introduction structure is designed for controlled gas delivery in applications such as semiconductor manufacturing, chemical processing, or medical devices. The structure includes a dense portion and a porous portion, where the dense portion has a smaller outer diameter than the porous portion. The dense portion is typically a solid or non-porous material that provides structural integrity and precise gas flow control, while the porous portion allows for uniform gas distribution or diffusion. The size difference between the two portions ensures proper alignment, sealing, or integration with other system components. The structure may be used in gas distribution systems, filters, or reactors where controlled gas introduction is critical. The design optimizes gas flow dynamics, prevents leakage, and enhances system efficiency by balancing structural support with gas permeability. The porous portion may be made of materials like sintered metal, ceramic, or polymer, while the dense portion may consist of metals, alloys, or rigid polymers. The invention addresses challenges in gas delivery systems where precise flow control and uniform distribution are required, improving performance in processes like chemical vapor deposition, gas sensing, or medical gas administration.
9. The gas introduction structure of claim 1 , wherein a length of the porous portion is 25 mm to 40 mm.
The invention relates to a gas introduction structure designed for use in semiconductor manufacturing processes, particularly for introducing process gases into a reaction chamber. The primary problem addressed is the need for precise and uniform gas distribution to ensure consistent semiconductor fabrication quality. Traditional gas introduction methods often suffer from uneven gas flow, leading to defects in the fabricated semiconductor devices. The gas introduction structure includes a porous portion that allows gas to diffuse evenly into the reaction chamber. This porous portion is a key feature, enabling controlled gas distribution. The invention specifies that the length of this porous portion should be between 25 mm and 40 mm. This dimensional constraint ensures optimal gas flow characteristics, balancing diffusion efficiency with structural integrity. The porous portion is typically made from a material that resists corrosion and high temperatures, such as ceramic or sintered metal, to withstand the harsh conditions of semiconductor processing environments. The structure may also include a gas supply line connected to the porous portion, ensuring a steady flow of gas into the chamber. The design may further incorporate a sealing mechanism to prevent gas leakage and maintain chamber pressure. The specified length range for the porous portion is critical, as shorter lengths may result in insufficient gas diffusion, while longer lengths could lead to excessive pressure drop or structural instability. This invention improves semiconductor manufacturing by enhancing gas uniformity, reducing defects, and increasing process reliability.
10. The gas introduction structure of claim 1 , wherein the gas introduction pipe is formed of a quartz pipe.
A gas introduction structure is designed for use in semiconductor manufacturing or other high-precision applications where controlled gas delivery is critical. The structure addresses the problem of material compatibility and thermal stability in gas delivery systems, particularly in environments with high temperatures or corrosive gases. Traditional metal pipes may degrade over time or react with certain gases, leading to contamination or performance issues. The gas introduction structure includes a gas introduction pipe that is specifically formed of a quartz pipe. Quartz is chosen for its high thermal resistance, chemical inertness, and transparency, making it ideal for applications requiring precise gas flow control without contamination. The quartz pipe ensures that gases remain pure and uncontaminated during delivery, which is essential for processes like chemical vapor deposition (CVD) or etching, where even trace impurities can affect product quality. The structure may also include additional components, such as a gas inlet, a gas outlet, and a sealing mechanism to prevent leaks. The quartz pipe is designed to withstand high temperatures without deformation, ensuring consistent gas flow rates and pressure. This design is particularly useful in semiconductor fabrication, where maintaining gas purity and stability is critical for producing high-quality integrated circuits. The use of quartz also allows for real-time monitoring of gas flow through the pipe, as its transparency enables optical sensing techniques to be employed.
11. The gas introduction structure of claim 1 , wherein the discharge part is welded to the gas introduction pipe.
A gas introduction structure is designed for use in semiconductor manufacturing or other high-precision applications where controlled gas flow is critical. The structure addresses the problem of ensuring reliable gas delivery while maintaining system integrity under high-pressure or high-temperature conditions. The invention includes a gas introduction pipe connected to a discharge part, which is responsible for directing gas into a processing chamber or other target environment. The discharge part is welded to the gas introduction pipe to create a seamless, leak-proof connection. This welded joint enhances structural stability and prevents gas leakage, which is essential for maintaining process consistency and safety. The design ensures that the gas introduction structure can withstand operational stresses without compromising performance. The welded connection also simplifies assembly and reduces the risk of failure points compared to alternative joining methods. The overall system is optimized for applications requiring precise gas flow control, such as chemical vapor deposition (CVD), etching, or other semiconductor fabrication processes. The invention improves upon prior art by providing a more robust and reliable gas introduction mechanism, particularly in environments where thermal or mechanical stresses could otherwise degrade performance.
12. The gas introduction structure of claim 1 , wherein the gas introduction pipe is inserted from a lower portion of the process chamber, and extends upward in the process chamber.
A gas introduction structure for a semiconductor processing system addresses the challenge of uniformly distributing process gases within a process chamber to enhance deposition or etching uniformity. The structure includes a gas introduction pipe that is inserted from the lower portion of the process chamber and extends upward within the chamber. The pipe is designed to deliver gases into the chamber in a controlled manner, ensuring even distribution across the substrate surface. The upward extension of the pipe allows for precise gas flow direction and minimizes turbulence, which is critical for maintaining consistent process conditions. The structure may also include additional components, such as gas distribution nozzles or flow control mechanisms, to further optimize gas delivery. This design improves process uniformity, reduces waste, and enhances the overall efficiency of semiconductor manufacturing processes. The upward orientation of the gas introduction pipe ensures that gases are introduced at an optimal height, preventing localized concentration and promoting uniform mixing with other gases in the chamber. The structure is particularly useful in plasma-enhanced chemical vapor deposition (PECVD) and etching systems where precise gas distribution is essential for high-quality film deposition or material removal.
13. The gas introduction structure of claim 1 , wherein the gas introduction pipe is inserted from a lower side of the process chamber, and horizontally extends in the process chamber.
This invention relates to a gas introduction structure for a process chamber, particularly in semiconductor manufacturing or similar applications where precise gas distribution is critical. The problem addressed is the need for uniform and controlled gas flow within the chamber to ensure consistent processing conditions, such as in deposition, etching, or other gas-phase reactions. The gas introduction structure includes a gas introduction pipe that is inserted from the lower side of the process chamber and extends horizontally within the chamber. This design allows for gas to be introduced at a lower position, which can help in achieving better flow distribution and minimizing turbulence compared to top-mounted systems. The horizontal extension ensures that gas is distributed evenly across the chamber, reducing the risk of localized concentration gradients that could affect process uniformity. The structure may also include features to control gas flow, such as adjustable nozzles or diffusers, to further optimize distribution. The lower insertion point and horizontal orientation are particularly useful in systems where vertical space is limited or where gas needs to be introduced near the substrate or reaction zone. This design can improve process efficiency, reduce waste, and enhance the quality of the manufactured products.
14. The gas introduction structure of claim 1 , wherein an inert gas is supplied to the gas introduction pipe, and the porous portion discharges the inert gas.
This invention relates to a gas introduction structure designed for semiconductor manufacturing or similar applications where precise gas delivery is critical. The structure addresses the problem of maintaining a controlled environment by preventing contamination or unwanted reactions during processes like chemical vapor deposition (CVD) or etching. The system includes a gas introduction pipe with a porous portion that allows gas to diffuse evenly into a processing chamber or workspace. The porous portion ensures uniform gas distribution, minimizing turbulence and improving process consistency. In this specific embodiment, an inert gas such as nitrogen or argon is supplied to the gas introduction pipe, and the porous portion discharges the inert gas into the environment. The inert gas helps create a protective atmosphere, preventing oxidation or other reactions that could degrade the quality of the semiconductor or other materials being processed. The porous portion may be made of materials like sintered metal or ceramic, chosen for their durability and compatibility with the inert gas. The structure can be integrated into larger semiconductor fabrication tools or other systems requiring controlled gas environments. The invention improves process reliability by ensuring stable gas delivery and reducing contamination risks.
15. A treatment apparatus comprising: a process chamber; and a gas introduction structure configured to introduce a gas into the process chamber, the gas introduction structure including: a gas introduction pipe inserted in the process chamber; and a discharge part covering an end portion of the gas introduction pipe at a side of the process chamber, and configured to discharge a gas supplied to the gas introduction pipe into the process chamber, wherein the discharge part comprises an installed porous portion formed of a porous body, and a dense portion disposed at a location closer to a leading end of the discharge part than the porous portion and having a porosity lower than that of the porous portion, wherein the porous body is formed of a quartz-glass porous body, wherein the dense portion is formed of a densified quartz-glass porous body obtained by sintering the quartz-glass porous body, and wherein, after installing the quartz-glass porous body covering the end portion of the gas introduction pipe, sintering a part of a leading end portion of the quartz-glass porous body, whereby a non-sintered part forms the porous portion and a sintered part forms the dense portion.
This invention relates to a treatment apparatus used in semiconductor or thin-film manufacturing, addressing the challenge of uniformly distributing process gases within a process chamber. The apparatus includes a process chamber and a gas introduction structure designed to introduce gas into the chamber. The gas introduction structure features a gas introduction pipe inserted into the process chamber and a discharge part covering the pipe's end. The discharge part releases gas into the chamber and consists of a porous portion and a dense portion. The porous portion, made of a quartz-glass porous body, allows gas to diffuse evenly. The dense portion, located closer to the leading end of the discharge part, has lower porosity and is formed by sintering part of the quartz-glass porous body. The sintering process creates a densified quartz-glass structure, ensuring controlled gas flow. The porous portion remains unsintered, maintaining high porosity for efficient gas distribution. This design improves gas uniformity and process consistency in semiconductor or thin-film deposition applications. The apparatus is particularly useful in environments requiring precise gas delivery, such as chemical vapor deposition (CVD) or atomic layer deposition (ALD) systems.
16. A gas introduction structure comprising: a gas introduction pipe inserted in a process chamber; and a discharge part covering an end portion of the gas introduction pipe at a side of the process chamber, and configured to discharge a gas supplied to the gas introduction pipe into the process chamber, wherein the discharge part comprises a porous portion formed of a porous body, and a dense portion disposed at a location closer to a leading end of the discharge part than the porous portion and having a porosity lower than that of the porous portion, wherein the porous body is formed of a quartz-glass porous body, and wherein the dense portion is formed by welding a quartz bar to an end of the porous portion.
This invention relates to a gas introduction structure for a process chamber, addressing the challenge of uniformly distributing gas within the chamber while maintaining structural integrity. The structure includes a gas introduction pipe inserted into the process chamber and a discharge part covering the pipe's end. The discharge part features a porous portion made of a quartz-glass porous body, allowing gas to diffuse evenly into the chamber. A dense portion, formed by welding a quartz bar to the porous portion's end, has lower porosity and is positioned closer to the leading end of the discharge part. This design ensures controlled gas flow while preventing excessive wear or damage to the porous material. The dense portion's reduced porosity helps maintain structural stability, while the porous portion facilitates uniform gas distribution. The quartz-glass material ensures compatibility with high-temperature and corrosive environments common in semiconductor or chemical vapor deposition processes. This structure improves gas delivery efficiency and extends the lifespan of the gas introduction system.
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December 24, 2019
March 8, 2022
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