Interconnections for 3D memory

1. An apparatus, comprising: a memory array comprising a plurality of access lines; and a controller coupled to the memory array, the controller to: select a first access line or a second access line for performance of a memory operation; cause performance of the memory operation; and cause the first access line and the second access line of the memory array to be equalized to a potential that is in between potentials corresponding to a logic high state and potentials corresponding to a logic low state subsequent to performance of the memory operation.

2. The apparatus of claim 1 , wherein, when the memory operation comprises a program operation, the controller is to cause the first access line to be selected and the second access line to be deselected.

3. The apparatus of claim 1 , wherein, when the memory operation comprises a read operation, the controller is to cause the first access line to be deselected and the second access line to be selected.

4. The apparatus of claim 1 , wherein the first access line and the second access line of the memory array are equalized to a potential that is different than a ground reference potential.

5. The apparatus of claim 1 , wherein the controller is, subsequent to causing the first access line and the second access line of the memory array to be equalized, to cause the first access line or the second access line, or both, to be discharged to a ground reference potential.

6. The apparatus of claim 5 , wherein the controller is, subsequent to causing the first access line or the second access line, or both, to be discharged to the ground reference potential, to bias the first access line or the second access line, or both, to a potential different than the ground reference potential.

7. The apparatus of claim 1 , wherein the memory array comprises a three-dimensional memory array having a stair step structure at at least a portion of the memory array.

8. An apparatus, comprising: a memory array comprising a stack of materials including a plurality of pairs of materials, pairs of materials including a conductive line formed over an insulation material, the stack of materials having a stair step structure formed at at least one edge of the memory array; and a controller coupled to the memory array, the controller to cause: performance of a memory operation; and a selected one of the conductive lines and a non-selected one of the conductive lines to have a substantially equal voltage after performance of the memory operation, wherein the substantially equal voltage comprises a voltage that is between voltages corresponding to a logic high state and voltages corresponding to a logic low state for the selected one of the conductive lines and the non-selected one of the conductive lines.

9. The apparatus of claim 8 , wherein the controller is to, prior to causing the selected one of the conductive lines and the non-selected one of the conductive lines to have a substantially equal voltage after performance of a memory operation, cause: a first voltage to be applied to a selected one of the conductive lines; and a second voltage to be applied to a non-selected one of the conductive lines.

10. The apparatus of claim 8 , further comprising a first interconnection coupled to the conductive line of a stair step and extending substantially perpendicular to a first surface of the stair step; and a second interconnection coupled to the first interconnection extending substantially parallel to a bit line of the memory array.

11. The apparatus of claim 8 , wherein a stair step of the stair step structure includes one of the pairs of materials.

12. The apparatus of claim 8 , wherein the stack of materials has a first width in a first direction, and the stair step structure has a second width in a direction perpendicular to the first direction, the second width being less than the first width.

13. The apparatus of claim 8 , wherein the substantially equal voltage is different than a ground reference potential.

14. A system, comprising: a first memory array comprising a first plurality of vertical strings of series-coupled memory cells controlled by a first plurality of access lines; a second memory array comprising a second plurality of vertical strings of series-coupled memory cells controlled by a second plurality of access lines; and a plurality of equalizing transistors switchably coupled to the first memory array and the second memory array, wherein: the plurality of equalizing transistors are operable to equalize a potential between one or more access lines of the first plurality of access lines or the second plurality of access lines, or both, to a potential that is between potentials corresponding to a logic high state and potentials corresponding to a logic low state for the one or more access lines of the first plurality of access lines or the second plurality of access lines, or both, subsequent to performance of a memory operation involving the first memory array or the second memory array, or both, and the first memory array and the second memory array are selectively coupled to a plurality of global control lines via selection transistors located beneath the first memory array or the second memory array, or both.

15. The system of claim 14 , wherein: the first plurality of vertical strings of series-coupled memory cells are located between a bit line of the first memory array and a source line of the first memory array, and the second plurality of vertical strings of series-coupled memory cells are located between a bit line of the second memory array and a source line of the second memory array.

16. The system of claim 14 , further comprising control circuitry coupled to the first memory array and the second memory array, the control circuitry to control performance of a memory operation using the first memory array or the second memory array, or both.

17. The system of claim 14 , wherein the first memory array or the second memory array, or both, comprise a stack of materials including a plurality of pairs of materials, pairs of materials including a conductive line formed over an insulation material, the stack of materials having a stair step structure formed at at least one edge of the first memory array or the second memory array, or both.

18. The system of claim 14 , further comprising control circuitry coupled to the first memory array, the second memory array, and the plurality of access lines, wherein the control circuitry is to cause the one or more access lines of the plurality of access lines to be discharged to a ground reference potential subsequent to the one or more access lines being equalized.

19. The system of claim 14 , further comprising control circuitry coupled to the first memory array, the second memory array, and the plurality of access lines, wherein the control circuitry is to: cause a first access line of the one or more access lines to be biased to a first potential subsequent to the one or more access lines being equalized; and cause a second access line of the one or more access lines to be biased to a second potential subsequent to the one or more access lines being equalized.