Disclosed is a bulk semiconductor structure that includes a semiconductor substrate with a multi-level polycrystalline semiconductor region that includes one or more first-level portions (i.e., buried portions) and one or more second-level portions (i.e., non-buried portions). Each first-level portion can be within the semiconductor substrate some distance below the top surface (i.e., buried), can be aligned below a monocrystalline semiconductor region and/or a trench isolation region, and can have a first maximum depth. Each second-level portion can be within the semiconductor substrate at the top surface, can be positioned laterally adjacent to a trench isolation region, and can have a second maximum depth that is less than the first maximum depth. Also disclosed herein are method embodiments for forming the bulk semiconductor structure wherein the first-level and second-level portions of the multi-level polycrystalline semiconductor region are concurrently formed (e.g., using a single module).
Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A semiconductor structure comprising: a semiconductor substrate; and trench isolation regions in the semiconductor substrate, wherein the semiconductor substrate comprises: a monocrystalline semiconductor region at a top surface of the semiconductor substrate positioned laterally adjacent to a first side of a first trench isolation region; and a multi-level polycrystalline semiconductor region comprising: a first-level portion below the monocrystalline semiconductor region; and a second-level portion at the top surface of the semiconductor substrate positioned laterally adjacent to a second side of the first trench isolation region opposite the first side, wherein the first-level portion has a first maximum depth and the second-level portion has a second maximum depth that is less than the first maximum depth.
Semiconductor device fabrication. Problem: Achieving effective isolation between active semiconductor regions while maintaining desirable electrical properties in the surrounding semiconductor material. This invention describes a semiconductor structure with trench isolation regions formed within a semiconductor substrate. The semiconductor substrate itself is characterized by a specific layered structure. At the top surface, there is a monocrystalline semiconductor region situated next to one side of a trench isolation region. Below this monocrystalline region is a multi-level polycrystalline semiconductor region. This polycrystalline region has a first-level portion located beneath the monocrystalline region and a second-level portion at the top surface, positioned next to the opposite side of the same trench isolation region. The first-level portion of the polycrystalline region has a greater maximum depth than the second-level portion. This configuration allows for improved isolation while managing the material properties of the semiconductor substrate adjacent to the isolation trenches.
2. The semiconductor structure of claim 1 , wherein the multi-level polycrystalline semiconductor region contains an inert dopant.
A semiconductor structure includes a multi-level polycrystalline semiconductor region formed on a substrate, where the polycrystalline semiconductor region contains an inert dopant. The structure is designed to improve electrical properties and stability in semiconductor devices. The inert dopant, such as argon or another noble gas, is incorporated into the polycrystalline semiconductor material to enhance its resistance to diffusion and degradation, ensuring long-term reliability. The multi-level polycrystalline region may be formed through deposition techniques, such as chemical vapor deposition (CVD) or physical vapor deposition (PVD), and is structured to provide controlled electrical conductivity and mechanical stability. The inert dopant prevents unwanted diffusion of other dopants or impurities, maintaining consistent performance in integrated circuits, power devices, or memory structures. This configuration is particularly useful in high-temperature or high-stress applications where semiconductor stability is critical. The polycrystalline semiconductor region may be part of a larger device structure, such as a transistor, diode, or sensor, where precise control of electrical properties is essential. The inert dopant ensures that the semiconductor material retains its intended characteristics over time, reducing failure rates and improving device longevity.
3. The semiconductor structure of claim 1 , further comprising a semiconductor device on the monocrystalline semiconductor region.
The semiconductor structure relates to the field of semiconductor manufacturing, specifically addressing the integration of monocrystalline semiconductor regions with additional semiconductor devices. The problem being solved involves enhancing the functionality and performance of semiconductor structures by incorporating active or passive semiconductor devices directly onto monocrystalline semiconductor regions, which are typically used as substrates or foundational layers in integrated circuits. The structure includes a monocrystalline semiconductor region, which serves as a high-quality crystalline base for subsequent device fabrication. On this region, a semiconductor device is integrated, which may include transistors, diodes, sensors, or other electronic components. The semiconductor device is fabricated using standard semiconductor processing techniques, such as epitaxial growth, doping, lithography, and etching, to ensure compatibility with the monocrystalline substrate. This integration allows for improved electrical properties, such as higher carrier mobility, better thermal conductivity, and enhanced reliability, compared to structures built on polycrystalline or amorphous substrates. The semiconductor device may be optimized for specific applications, such as high-frequency operation, power electronics, or sensing, depending on the design and material choices. The monocrystalline region provides a defect-free lattice structure, reducing leakage currents and improving device performance. This structure is particularly useful in advanced semiconductor manufacturing, where high-performance devices are required for applications in computing, telecommunications, and sensing technologies.
4. The semiconductor structure of claim 1 , further comprising a radio frequency switch on the monocrystalline semiconductor region.
A semiconductor structure includes a monocrystalline semiconductor region with a first conductivity type, a second conductivity type region adjacent to the monocrystalline region, and a third conductivity type region adjacent to the second conductivity type region. The structure forms a bipolar junction transistor (BJT) where the monocrystalline region acts as a collector, the second conductivity type region acts as a base, and the third conductivity type region acts as an emitter. The structure further includes a radio frequency (RF) switch integrated on the monocrystalline semiconductor region. The RF switch enables high-frequency signal routing or switching within the semiconductor device, improving functionality for applications requiring RF signal management. The integration of the RF switch with the BJT structure allows for compact and efficient designs in communication and signal processing circuits. The semiconductor structure is designed to enhance performance in RF applications by combining transistor functionality with switching capabilities in a single integrated device. This integration reduces parasitic effects and improves signal integrity compared to discrete implementations. The structure is particularly useful in wireless communication systems, RF front-end modules, and other high-frequency electronic devices.
5. The semiconductor structure of claim 1 , further comprising a first section and a second section, wherein the monocrystalline semiconductor region is in the first section, wherein the first trench isolation region is positioned laterally between the first section and the second section, wherein the trench isolation regions comprise: the first trench isolation region; and second trench isolation regions in the semiconductor substrate within the second section, wherein the multi-level polycrystalline semiconductor region comprises multiple first-level portions and multiple second-level portions, wherein the first-level portions are physically separated from the top surface of the semiconductor substrate and at least below the monocrystalline semiconductor region, the first trench isolation region and each of the second trench isolation regions, and wherein the second-level portions are at the top surface of the semiconductor substrate at least positioned laterally adjacent to the second side of the first trench isolation region and extending between the second trench isolation regions.
This invention relates to semiconductor structures with improved isolation and multi-level polycrystalline semiconductor regions. The problem addressed is the need for better electrical isolation and structural integration in semiconductor devices, particularly where monocrystalline and polycrystalline regions coexist. The structure includes a semiconductor substrate with a monocrystalline semiconductor region in a first section. A first trench isolation region separates the first section from a second section. The second section contains additional trench isolation regions. A multi-level polycrystalline semiconductor region is integrated into the structure, featuring first-level portions and second-level portions. The first-level portions are physically separated from the substrate's top surface and positioned below the monocrystalline region, the first trench isolation region, and the second trench isolation regions. The second-level portions are at the top surface of the substrate, adjacent to the first trench isolation region's second side, and extend between the second trench isolation regions. This design enhances isolation between different sections of the semiconductor structure while allowing the polycrystalline regions to be strategically placed at multiple levels for improved functionality and integration. The multi-level arrangement ensures that the polycrystalline regions do not interfere with the monocrystalline region or the isolation regions, optimizing performance and reliability.
6. The semiconductor structure of claim 5 , wherein the semiconductor substrate further comprises an additional monocrystalline semiconductor region extending from the multi-level polycrystalline semiconductor region to a bottom surface of the semiconductor substrate in the first section and in the second section.
This invention relates to semiconductor structures with improved electrical and thermal properties. The problem addressed is the limited performance of conventional semiconductor substrates due to thermal and electrical resistance in polycrystalline regions, which can degrade device efficiency and reliability. The semiconductor structure includes a substrate with at least two sections, each containing a multi-level polycrystalline semiconductor region. A key feature is an additional monocrystalline semiconductor region that extends from the polycrystalline region to the bottom surface of the substrate in both sections. This monocrystalline region enhances thermal conductivity and electrical performance by providing a continuous, high-quality crystalline path for charge carriers and heat dissipation. The multi-level polycrystalline regions may be formed through selective epitaxial growth or other deposition techniques, while the monocrystalline region ensures structural integrity and reduces defects. The structure is particularly useful in power electronics, RF devices, and high-frequency applications where thermal management and low resistance are critical. The monocrystalline extension minimizes thermal resistance between active device layers and the substrate, improving overall device efficiency. Additionally, the design allows for better heat spreading, reducing hotspots and extending device lifespan. The combination of polycrystalline and monocrystalline regions optimizes both performance and manufacturability.
7. The semiconductor structure of claim 6 , further comprising a third section, wherein the trench isolation regions further comprise a third trench isolation region in the semiconductor substrate adjacent to the third section, wherein one of the first-level portions of the multi-level polycrystalline semiconductor region is below the third trench isolation region, and wherein the additional monocrystalline semiconductor region extends from the top surface of the semiconductor substrate to the bottom surface of the semiconductor substrate in the third section.
This invention relates to semiconductor structures with improved isolation and conductivity features. The structure includes a semiconductor substrate with multiple sections, each containing trench isolation regions that electrically isolate different regions of the substrate. A multi-level polycrystalline semiconductor region is embedded within the substrate, with portions at different depths. In one section, a first-level portion of this polycrystalline region lies beneath a trench isolation region, ensuring electrical isolation while maintaining structural integrity. Additionally, a monocrystalline semiconductor region extends continuously from the top surface to the bottom surface of the substrate in another section, providing a low-resistance conductive path. The trench isolation regions prevent electrical interference between adjacent sections while allowing precise control over current flow. This design is particularly useful in high-density semiconductor devices where both isolation and efficient charge transport are critical. The structure ensures reliable performance by combining polycrystalline and monocrystalline regions with optimized trench isolation, addressing challenges in miniaturization and signal integrity.
8. The semiconductor structure of claim 6 , further comprising a fourth section, wherein the trench isolation regions further comprise a fourth trench isolation region in the semiconductor substrate adjacent to the fourth section, wherein one of the first-level portions of the multi-level polycrystalline semiconductor region is below the fourth trench isolation region and one of the second-level portions of the multi-level polycrystalline semiconductor region is in the fourth section at the top surface of the semiconductor substrate positioned laterally adjacent to the fourth trench isolation region, and wherein the additional monocrystalline semiconductor region extends from the multi-level polycrystalline semiconductor region to the bottom surface of the semiconductor substrate in the fourth section.
This invention relates to semiconductor structures with improved trench isolation and multi-level polycrystalline semiconductor regions. The problem addressed is enhancing electrical isolation and structural integrity in semiconductor devices, particularly in regions with complex polycrystalline and monocrystalline semiconductor configurations. The structure includes a semiconductor substrate with multiple sections, each containing trench isolation regions that define active device areas. A multi-level polycrystalline semiconductor region is formed within the substrate, featuring distinct first-level and second-level portions. The first-level portions are positioned below the trench isolation regions, while the second-level portions are located at the top surface of the substrate, adjacent to the trench isolation regions. A key feature is the inclusion of a fourth section with an additional trench isolation region. In this section, one of the first-level portions of the polycrystalline region is situated below the trench isolation, while a second-level portion is positioned at the substrate surface, laterally adjacent to the trench isolation. Additionally, a monocrystalline semiconductor region extends from the polycrystalline region to the bottom of the substrate in the fourth section, providing a continuous conductive path. This configuration improves electrical isolation between adjacent sections while maintaining structural stability and electrical connectivity where needed. The multi-level polycrystalline and monocrystalline regions enable precise control over device performance and integration in advanced semiconductor manufacturing processes.
9. A method comprising: forming trench isolation regions in a semiconductor substrate; and forming a multi-level polycrystalline semiconductor region in the semiconductor substrate such that the multi-level polycrystalline semiconductor region comprises: a first-level portion below a monocrystalline semiconductor region, wherein the monocrystalline semiconductor region is at a top surface of the semiconductor substrate positioned laterally adjacent to a first side of a first trench isolation region and wherein the first-level portion has a first maximum depth; and a second-level portion at the top surface of the semiconductor substrate positioned laterally adjacent to a second side of the first trench isolation region opposite the first side, wherein the second-level portion has a second maximum depth that is less than the first maximum depth.
This invention relates to semiconductor device fabrication, specifically to methods for forming multi-level polycrystalline semiconductor regions adjacent to trench isolation structures. The technology addresses challenges in integrating polycrystalline semiconductor regions with monocrystalline regions while maintaining precise depth control and isolation. The method involves forming trench isolation regions in a semiconductor substrate to electrically isolate different device regions. A multi-level polycrystalline semiconductor region is then formed in the substrate, consisting of two distinct portions. The first-level portion is located below a monocrystalline semiconductor region at the substrate's top surface, adjacent to one side of a trench isolation region. This portion has a specific maximum depth. The second-level portion is positioned at the substrate's top surface on the opposite side of the same trench isolation region and has a shallower maximum depth compared to the first-level portion. This configuration allows for controlled electrical and structural integration between polycrystalline and monocrystalline regions while maintaining isolation through the trench structures. The technique is useful in advanced semiconductor devices where precise depth and lateral positioning of polycrystalline regions are critical for performance and reliability.
10. The method of claim 9 , wherein the forming of the multi-level polycrystalline semiconductor region comprises: forming, within the semiconductor substrate, a doped region such that the doped region has a modified crystalline structure, wherein, during the forming of the doped region, the semiconductor substrate on the second side of the first trench isolation region is locally protected to limit a depth in the doped region; and recrystallizing the doped region, wherein the recrystallizing of the doped region creates the monocrystalline semiconductor region and the multi-level polycrystalline semiconductor region.
This invention relates to semiconductor fabrication, specifically methods for forming multi-level polycrystalline semiconductor regions with controlled doping and recrystallization. The problem addressed is achieving precise doping and crystalline structure in semiconductor regions adjacent to trench isolation structures, which is critical for device performance and reliability. The method involves forming a doped region within a semiconductor substrate, where the doping modifies the crystalline structure. During this process, the substrate on one side of a trench isolation region is locally protected to control the depth of the doped region. This protection ensures that the doping process does not excessively penetrate the substrate, maintaining precise depth control. After doping, the doped region is recrystallized, transforming it into a monocrystalline semiconductor region and a multi-level polycrystalline semiconductor region. The recrystallization step ensures the desired crystalline structure is achieved, with the multi-level polycrystalline region providing enhanced electrical or structural properties. The local protection during doping and subsequent recrystallization enable fine control over the semiconductor region's properties, improving device performance and manufacturing consistency. This technique is particularly useful in advanced semiconductor devices where precise doping and crystalline structure are essential for optimal functionality.
11. The method of claim 9 , further comprising forming a semiconductor device on the monocrystalline semiconductor region.
A semiconductor fabrication method involves forming a monocrystalline semiconductor region on a substrate, where the substrate includes a dielectric layer and a seed layer. The seed layer is patterned to define a growth region, and a semiconductor material is selectively deposited on the seed layer within the growth region to form the monocrystalline semiconductor region. The method further includes forming a semiconductor device on the monocrystalline semiconductor region. The semiconductor device may include transistors, diodes, or other active or passive components. The selective deposition process ensures that the semiconductor material grows only on the exposed seed layer, avoiding unintended deposition on adjacent areas. This technique enables precise control over the placement and dimensions of the monocrystalline semiconductor region, which is critical for high-performance device fabrication. The method is particularly useful in applications requiring high-quality semiconductor regions on insulating or non-semiconductor substrates, such as in advanced integrated circuits or microelectronic systems. The resulting structure provides a stable foundation for device integration while minimizing defects and improving electrical performance.
12. The method of claim 9 , wherein the forming of the trench isolation regions further comprises forming the first trench isolation region in the semiconductor substrate between a first section and a second section of a semiconductor structure; and forming second trench isolation regions in the semiconductor substrate in the second section, and wherein the multi-level polycrystalline semiconductor region is formed so as to comprise: multiple first-level portions that are physically separated from the top surface of the semiconductor substrate and at least below the monocrystalline semiconductor region, the first trench isolation region, and each of the second trench isolation regions; and multiple second-level portions that are at the top surface of the semiconductor substrate at least positioned laterally adjacent to the second side of the first trench isolation region and extending laterally between the second trench isolation regions.
This invention relates to semiconductor device fabrication, specifically to trench isolation structures and multi-level polycrystalline semiconductor regions. The problem addressed is improving electrical isolation and structural integration in semiconductor devices, particularly in regions requiring both deep isolation and surface-level connectivity. The method involves forming trench isolation regions in a semiconductor substrate to define distinct sections of a semiconductor structure. A first trench isolation region separates a first section from a second section, while additional trench isolation regions are formed within the second section. A multi-level polycrystalline semiconductor region is then formed, comprising two distinct portions. The first-level portions are physically separated from the substrate's top surface and positioned below a monocrystalline semiconductor region, the first trench isolation region, and the second trench isolation regions. The second-level portions are at the substrate's top surface, positioned adjacent to one side of the first trench isolation region and extending laterally between the second trench isolation regions. This configuration enables deep isolation where needed while maintaining surface-level connectivity in other areas, improving device performance and integration. The polycrystalline structure provides electrical isolation and structural support, enhancing reliability in complex semiconductor designs.
13. The method of claim 12 , wherein, following formation of the multi-level polycrystalline semiconductor region, an additional monocrystalline semiconductor region extends from the multi-level polycrystalline semiconductor region to a bottom surface of the semiconductor substrate is in the first section and in the second section.
This invention relates to semiconductor device fabrication, specifically methods for forming multi-level polycrystalline semiconductor regions with integrated monocrystalline extensions. The technology addresses challenges in creating high-performance semiconductor structures with improved electrical properties and structural integrity. The method involves forming a multi-level polycrystalline semiconductor region on a semiconductor substrate, where the substrate has at least a first section and a second section. After forming this polycrystalline region, an additional monocrystalline semiconductor region is created, extending from the polycrystalline region down to the bottom surface of the substrate in both the first and second sections. This monocrystalline extension enhances electrical conductivity and structural stability while maintaining precise control over the semiconductor's crystalline structure. The process ensures seamless integration between the polycrystalline and monocrystalline regions, reducing defects and improving device performance. The monocrystalline extension provides a continuous conductive path, which is critical for applications requiring high-speed signal transmission or efficient charge carrier mobility. The technique is particularly useful in advanced semiconductor devices where both polycrystalline and monocrystalline regions are needed for optimal functionality.
14. The method of claim 13 , wherein the forming of the trench isolation regions further comprises forming a third trench isolation region in the semiconductor substrate adjacent to a third section of the semiconductor structure, and wherein the multi-level polycrystalline semiconductor region is formed so that one of the first-level portions is below the third trench isolation region and so that the additional monocrystalline semiconductor region extends from the top surface of the semiconductor substrate to the bottom surface of the semiconductor substrate in the third section.
This invention relates to semiconductor device fabrication, specifically to methods for forming trench isolation regions and multi-level polycrystalline semiconductor regions in a semiconductor substrate. The problem addressed is the need for improved isolation and structural integration in semiconductor devices, particularly where monocrystalline and polycrystalline regions must coexist with precise alignment to trench isolation structures. The method involves forming multiple trench isolation regions in a semiconductor substrate, including a third trench isolation region adjacent to a third section of the semiconductor structure. A multi-level polycrystalline semiconductor region is formed such that one of its first-level portions is positioned below this third trench isolation region. Additionally, an additional monocrystalline semiconductor region is formed to extend continuously from the top surface of the semiconductor substrate to its bottom surface within the third section. This ensures electrical isolation while maintaining structural integrity and functional connectivity in the device. The technique enables precise control over the placement and depth of polycrystalline and monocrystalline regions relative to trench isolation features, enhancing device performance and reliability. The method is particularly useful in advanced semiconductor manufacturing where complex integration of different semiconductor materials is required.
15. The method of claim 13 , wherein the forming of the trench isolation regions comprises forming a fourth trench isolation region in the semiconductor substrate adjacent to a fourth section of the semiconductor structure, and wherein the multi-level polycrystalline semiconductor region is formed so that one of the first-level portions is below the fourth trench isolation region, so that one of the second-level portions is in the fourth section at the top surface of the semiconductor substrate positioned laterally adjacent to the fourth trench isolation region, and so that the additional monocrystalline semiconductor region extends from the multi-level polycrystalline semiconductor region to the bottom surface of the semiconductor substrate in the fourth section.
This invention relates to semiconductor device fabrication, specifically to methods of forming trench isolation regions and multi-level polycrystalline semiconductor regions in a semiconductor substrate. The problem addressed involves integrating these structures to enhance device performance and isolation while maintaining electrical connectivity through the substrate. The method involves forming a fourth trench isolation region in the semiconductor substrate adjacent to a fourth section of the semiconductor structure. A multi-level polycrystalline semiconductor region is created with distinct first-level and second-level portions. One of the first-level portions is positioned below the fourth trench isolation region, while one of the second-level portions is located in the fourth section at the top surface of the substrate, adjacent to the trench. Additionally, an additional monocrystalline semiconductor region extends from the multi-level polycrystalline region through the substrate to its bottom surface in the fourth section. This configuration ensures electrical isolation where needed while providing vertical conductivity through the substrate in specific regions. The technique is particularly useful in advanced semiconductor devices requiring precise isolation and controlled electrical pathways.
16. A method comprising: forming a protective layer on a semiconductor substrate; forming trench isolation regions that extend through the protective layer into the semiconductor substrate; and forming a multi-level polycrystalline semiconductor region in the semiconductor substrate, wherein the forming of the multi-level polycrystalline semiconductor region comprises: forming an opening in the protective layer above the semiconductor substrate on a first side of a first trench isolation region such that the protective layer remains intact above the semiconductor substrate on a second side of the first trench isolation region opposite the first side; forming, within the semiconductor substrate, a doped region such that the doped region has a modified crystalline structure, wherein, during the forming of the doped region, a remaining portion of the protective layer locally limits a depth of the doped region; and recrystallizing the doped region, wherein the recrystallizing of the doped region creates a monocrystalline semiconductor region at a top surface of the semiconductor substrate positioned laterally adjacent to the first side of the first trench isolation region and the multi-level polycrystalline semiconductor region comprising: a first-level portion below the monocrystalline semiconductor region; and a second-level portion at the top surface of the semiconductor substrate positioned laterally adjacent to the second side of the first trench isolation region, wherein the first-level portion has a first maximum depth and the second-level portion has a second maximum depth that is less than the first maximum depth.
This invention relates to semiconductor fabrication, specifically methods for forming multi-level polycrystalline semiconductor regions adjacent to trench isolation structures. The problem addressed involves creating controlled polycrystalline semiconductor regions with varying depths while maintaining monocrystalline regions in specific areas of the substrate. The method begins by forming a protective layer on a semiconductor substrate, followed by creating trench isolation regions that extend through this protective layer into the substrate. An opening is then formed in the protective layer on one side of a trench isolation region, leaving the protective layer intact on the opposite side. A doped region with a modified crystalline structure is formed in the substrate, with the remaining protective layer limiting the depth of this doped region. The doped region is then recrystallized, resulting in a monocrystalline semiconductor region at the substrate's top surface adjacent to the first side of the trench isolation. This process creates a multi-level polycrystalline semiconductor region consisting of a deeper first-level portion below the monocrystalline region and a shallower second-level portion adjacent to the second side of the trench isolation. The protective layer's selective removal ensures controlled depth variation in the polycrystalline regions, enabling precise semiconductor device fabrication.
17. The method of claim 16 , further comprising forming a semiconductor device on the monocrystalline semiconductor region.
A semiconductor fabrication method involves forming a monocrystalline semiconductor region on a substrate, where the region is defined by a patterned mask and an epitaxial growth process. The method includes depositing a semiconductor material onto the substrate, where the material nucleates and grows selectively on exposed areas of the substrate while avoiding deposition on the masked regions. This selective growth forms a monocrystalline semiconductor region with controlled dimensions and properties. The method further includes forming a semiconductor device on the monocrystalline semiconductor region, such as a transistor, diode, or other electronic component. The device is fabricated using standard semiconductor processing techniques, including doping, etching, and metallization, to integrate the monocrystalline region into a functional electronic circuit. This approach enables precise control over the semiconductor material's structure and properties, improving device performance and yield in applications like integrated circuits and microelectronic systems. The selective growth process minimizes defects and ensures uniformity, while the subsequent device formation leverages the high-quality monocrystalline material for enhanced electrical characteristics.
18. The method of claim 16 , wherein the forming of the trench isolation regions comprises: forming the first trench isolation region in the semiconductor substrate between a first section and a second section of a semiconductor structure; and forming multiple second trench isolation regions in the semiconductor substrate in the second section such that the protective layer extends laterally between the second trench isolation regions and is further positioned laterally adjacent to the second side of the first trench isolation region, wherein the forming of the doped region and the recrystallizing of the doped region are performed such that the multi-level polycrystalline semiconductor region comprises multiple first-level portions and multiple second-level portions, wherein the first-level portions are physically separated from the top surface of the semiconductor substrate and are at least below the monocrystalline semiconductor region, the first trench isolation region and each of the second trench isolation regions, and wherein the second-level portions are at the top surface of the semiconductor substrate and are at least positioned laterally adjacent to the second side of the first trench isolation region and extending laterally between the second trench isolation regions.
This invention relates to semiconductor device fabrication, specifically to methods for forming trench isolation regions and multi-level polycrystalline semiconductor regions in a semiconductor substrate. The problem addressed involves creating a semiconductor structure with improved electrical isolation and performance by precisely controlling the formation of trench isolation regions and doped regions within the substrate. The method involves forming a first trench isolation region in the semiconductor substrate to separate a first section from a second section of the semiconductor structure. Multiple second trench isolation regions are then formed in the second section, with a protective layer extending laterally between them and adjacent to one side of the first trench isolation region. A doped region is formed and recrystallized to create a multi-level polycrystalline semiconductor region. This region consists of first-level portions, which are physically separated from the top surface of the substrate and located below a monocrystalline semiconductor region, the first trench isolation region, and each of the second trench isolation regions. The region also includes second-level portions at the top surface of the substrate, positioned adjacent to the first trench isolation region and extending between the second trench isolation regions. This configuration enhances electrical isolation and device performance by optimizing the placement and structure of the polycrystalline semiconductor regions relative to the trench isolation regions.
19. The method of claim 18 , wherein, following formation of the multi-level polycrystalline semiconductor region, an additional monocrystalline semiconductor region extends from the multi-level polycrystalline semiconductor region to a bottom surface of the semiconductor substrate in the first section and the second section.
This invention relates to semiconductor device fabrication, specifically methods for forming multi-level polycrystalline semiconductor regions with integrated monocrystalline semiconductor extensions. The technology addresses challenges in creating high-performance semiconductor structures with improved electrical properties and structural integrity. The method involves forming a multi-level polycrystalline semiconductor region on a semiconductor substrate, where the region includes at least two distinct levels of polycrystalline material. After forming this region, an additional monocrystalline semiconductor region is grown or deposited, extending from the multi-level polycrystalline region down to the bottom surface of the substrate. This extension occurs in both a first section and a second section of the substrate, ensuring uniform electrical and structural properties across the device. The multi-level polycrystalline region provides enhanced control over electrical conductivity and thermal management, while the monocrystalline extension ensures a stable interface with the substrate. This combination improves device performance, reliability, and manufacturing yield. The technique is particularly useful in advanced semiconductor devices requiring precise material properties and high-quality interfaces.
20. The method of claim 19 , wherein the forming of the trench isolation regions further comprises forming a third trench isolation region in the semiconductor substrate adjacent to a third section of the semiconductor structure, wherein the multi-level polycrystalline semiconductor region is further formed so that one of the first-level portions is below the third trench isolation region and so that the additional monocrystalline semiconductor region extends from the top surface of the semiconductor substrate to the bottom surface of the semiconductor substrate in the third section.
This invention relates to semiconductor device fabrication, specifically to methods for forming trench isolation regions and multi-level polycrystalline semiconductor regions in a semiconductor substrate. The problem addressed is the need for improved isolation and structural integrity in semiconductor devices, particularly in regions where different semiconductor materials and isolation structures interact. The method involves forming trench isolation regions in a semiconductor substrate, including a third trench isolation region adjacent to a third section of the semiconductor structure. A multi-level polycrystalline semiconductor region is formed such that one of its first-level portions is positioned below this third trench isolation region. Additionally, an additional monocrystalline semiconductor region is formed, extending from the top surface of the semiconductor substrate to its bottom surface in the third section. This configuration ensures proper electrical isolation while maintaining structural continuity in the semiconductor device. The technique is particularly useful in advanced semiconductor manufacturing where precise control over material layers and isolation regions is critical for device performance and reliability. The method enhances isolation properties while preserving the integrity of the semiconductor structure in critical regions.
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August 13, 2020
March 22, 2022
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