A semiconductor package includes a core layer, a conductive interconnect and a semiconductor chip. The core layer has a top surface and a bottom surface opposite to the top surface. The conductive interconnect penetrates through the core layer. The conductive interconnect has a top surface and a bottom surface respectively exposed from the top surface and the bottom surface of the core layer. The semiconductor chip is disposed on the top surface of the core layer. The semiconductor chip includes a conductive pad, and the top surface of the conductive interconnect directly contacts the conductive pad.
Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A semiconductor package, comprising: a core layer having a top surface and a bottom surface opposite to the top surface, wherein the core layer comprises a metal material; a conductive interconnect penetrating through the core layer, the conductive interconnect having a top surface and a bottom surface respectively exposed from the top surface and the bottom surface of the core layer; a semiconductor chip disposed on the top surface of the core layer, wherein the semiconductor chip comprises a conductive pad, and the top surface of the conductive interconnect directly contacts the conductive pad; and an insulation layer between the core layer and the conductive interconnect.
This invention relates to semiconductor packaging, specifically addressing challenges in thermal management and electrical connectivity in high-performance semiconductor devices. The package includes a core layer made of a metal material, providing structural support and enhanced heat dissipation. A conductive interconnect penetrates through the core layer, with its top and bottom surfaces exposed on either side of the core. The interconnect is electrically insulated from the core by an insulation layer, preventing short circuits while maintaining thermal conductivity. A semiconductor chip is mounted on the top surface of the core layer, with its conductive pad directly contacting the top surface of the interconnect, ensuring efficient electrical connection. The metal core layer improves thermal performance by spreading heat away from the chip, while the insulated interconnect enables reliable signal transmission. This design is particularly useful for power electronics and high-density integrated circuits where thermal management and electrical efficiency are critical. The insulation layer ensures electrical isolation between the conductive interconnect and the metal core, preventing interference or damage. The direct contact between the chip's conductive pad and the interconnect minimizes resistance and improves signal integrity. The overall structure combines thermal conductivity, electrical insulation, and robust connectivity in a compact form factor.
2. The semiconductor package as claimed in claim 1 , wherein the core layer has a coefficient of thermal expansion (CTE) equal to or smaller than 10×10 −6 /K.
The semiconductor package includes a core layer with a coefficient of thermal expansion (CTE) equal to or smaller than 10×10^-6/K. This design addresses thermal expansion mismatches in semiconductor packaging, which can cause mechanical stress, warpage, or failure during manufacturing and operation. The core layer, typically made of materials like silicon, glass, or ceramic, provides structural support while minimizing thermal expansion to match or closely align with adjacent components such as silicon chips or substrates. The low CTE core layer ensures dimensional stability under temperature variations, reducing stress-induced defects like cracking or delamination. This feature is particularly important in high-performance or high-reliability applications where thermal cycling is frequent. The core layer may also include embedded conductive traces or vias for electrical interconnects, enhancing functionality while maintaining thermal stability. The overall package design integrates the low-CTE core with other layers, such as redistribution layers or encapsulation materials, to form a compact, robust semiconductor device.
3. The semiconductor package as claimed in claim 2 , wherein the core layer has a CTE from 2×10 −6 /K to 10×10 −6 /K.
The semiconductor package includes a core layer with a coefficient of thermal expansion (CTE) between 2×10^-6/K and 10×10^-6/K. This core layer is part of a semiconductor package designed to mitigate thermal expansion mismatches between different materials in the package, which can cause stress, warpage, or failure during manufacturing or operation. The core layer is positioned between a first redistribution layer (RDL) and a second RDL, where the first RDL is connected to a first semiconductor die and the second RDL is connected to a second semiconductor die. The core layer provides structural support and helps align the semiconductor dies while accommodating thermal expansion differences. The specified CTE range ensures compatibility with adjacent materials, reducing mechanical stress and improving reliability. The package may also include a molding compound encapsulating the semiconductor dies and a solder mask covering the RDLs. This design is particularly useful in high-performance semiconductor packages where thermal stability and mechanical integrity are critical.
4. The semiconductor package as claimed in claim 1 , wherein the conductive interconnect comprises a vertical portion penetrating through the core layer and a horizontal portion extending in at least a portion of the bottom surface of the core layer.
A semiconductor package includes a core layer with a conductive interconnect that provides electrical connections. The conductive interconnect has a vertical portion that penetrates through the core layer and a horizontal portion that extends along at least part of the bottom surface of the core layer. This structure allows for efficient signal routing and power distribution within the package. The vertical portion enables vertical electrical connections through the core layer, while the horizontal portion facilitates lateral connections along the bottom surface. This design is useful in semiconductor packaging to improve electrical performance, reduce signal delays, and enhance integration density. The conductive interconnect may be part of a larger interconnect structure that includes additional conductive layers or vias for further connectivity. The core layer provides structural support and insulation, while the conductive interconnect ensures reliable electrical pathways. This configuration is particularly beneficial in advanced semiconductor packages where high-speed signal transmission and compact designs are required.
5. The semiconductor package as claimed in claim 1 , wherein the insulation layer is disposed between and directly contacting the top surface of the core layer and a bottom surface of the semiconductor chip.
This invention relates to semiconductor packaging, specifically addressing the challenge of thermal and electrical insulation between a semiconductor chip and a core layer in a package structure. The semiconductor package includes a core layer with a top surface, a semiconductor chip with a bottom surface, and an insulation layer positioned directly between and in contact with both surfaces. The insulation layer prevents electrical shorting and reduces thermal conduction between the chip and the core layer, improving reliability and performance. The core layer provides structural support and may include conductive or non-conductive materials, while the semiconductor chip is mounted on the insulation layer. The insulation layer is designed to have high dielectric strength and low thermal conductivity to minimize heat transfer while maintaining electrical isolation. This configuration is particularly useful in high-power or high-frequency applications where thermal management and electrical insulation are critical. The direct contact between the insulation layer and both the core layer and semiconductor chip ensures a compact and efficient package design.
6. The semiconductor package as claimed in claim 5 , wherein the conductive interconnect directly contacts a bottom surface of the conductive pad, and at least a portion of the insulation layer directly contacts the top surface of the core layer, the bottom surface of the conductive pad, and the conductive interconnect.
A semiconductor package is designed to improve electrical connectivity and insulation in integrated circuits. The package includes a core layer with a conductive pad and a conductive interconnect. The conductive interconnect directly contacts the bottom surface of the conductive pad, ensuring a low-resistance electrical connection. An insulation layer is applied over the core layer, covering at least a portion of the top surface of the core layer, the bottom surface of the conductive pad, and the conductive interconnect. This insulation layer provides electrical isolation while maintaining structural integrity. The design ensures reliable signal transmission and prevents short circuits by isolating conductive elements. The package is particularly useful in high-density semiconductor applications where precise electrical connections and insulation are critical. The insulation layer's coverage of multiple surfaces enhances protection against environmental factors and mechanical stress, improving overall device reliability. The direct contact between the conductive interconnect and the conductive pad minimizes signal loss and improves performance. This configuration is suitable for advanced packaging technologies, including flip-chip and wafer-level packaging, where efficient electrical connections and robust insulation are essential.
7. The semiconductor package as claimed in claim 1 , further comprising: a metal finish layer disposed on the bottom surface of the conductive interconnect, wherein a material of the metal finish layer is different from a material of the conductive interconnect.
A semiconductor package includes a substrate with a conductive interconnect extending through the substrate to electrically connect components on opposite sides. The conductive interconnect is formed from a first conductive material, such as copper, and has a bottom surface exposed on the substrate's lower side. To enhance reliability and compatibility with external connections, a metal finish layer is applied to the bottom surface of the conductive interconnect. This finish layer is made from a second conductive material, distinct from the interconnect material, to improve solderability, corrosion resistance, or adhesion to external components. The finish layer may consist of materials like nickel, gold, or tin, depending on the application requirements. This design ensures robust electrical and mechanical connections while preventing degradation of the interconnect material due to environmental exposure or soldering processes. The finish layer also facilitates compatibility with different assembly techniques and external interfaces, such as printed circuit boards or other semiconductor packages. The distinct materials of the interconnect and finish layer optimize performance and longevity in high-density electronic applications.
8. The semiconductor package as claimed in claim 7 , further comprising: a dielectric layer disposed on the bottom surface of the core layer and the bottom surface of the conductive interconnect, the dielectric layer being adjacent to the metal finish layer.
The semiconductor package addresses the challenge of improving electrical connectivity and reliability in integrated circuits by incorporating a dielectric layer that enhances insulation and structural integrity. The package includes a core layer with conductive interconnects extending through it, providing electrical pathways between different components. A metal finish layer is applied to the bottom surface of the core layer to facilitate soldering and external connections. The dielectric layer is disposed on the bottom surface of the core layer and the conductive interconnects, positioned adjacent to the metal finish layer. This dielectric layer ensures proper insulation between conductive elements, preventing short circuits and improving overall performance. The arrangement also enhances mechanical stability, reducing stress and potential failures during operation. The dielectric layer's placement ensures compatibility with standard manufacturing processes while improving the package's durability and electrical properties. This design is particularly useful in high-density semiconductor applications where reliable insulation and robust connections are critical.
9. The semiconductor package as claimed in claim 1 , wherein the conductive interconnect comprises: a conductive layer penetrating through the core layer; and a seed layer disposed between and directly contacting the conductive layer and the conductive pad, wherein the seed layer ( 226 ) is between the insulation layer ( 112 ) and the conductive layer ( 224 ).
This invention relates to semiconductor packaging, specifically addressing the challenge of forming reliable electrical connections between conductive elements in a semiconductor package. The package includes a core layer with an insulation layer and a conductive pad on its surface. A conductive interconnect structure is formed through the core layer to establish electrical connectivity. The interconnect comprises a conductive layer that penetrates through the core layer, providing a vertical conductive path. A seed layer is positioned between and directly contacts both the conductive layer and the conductive pad, ensuring strong adhesion and electrical conductivity. The seed layer is also situated between the insulation layer and the conductive layer, preventing direct contact and potential short circuits. This configuration enhances reliability by improving electrical performance and structural integrity in semiconductor packages. The conductive interconnect structure is designed to facilitate efficient signal transmission while maintaining mechanical stability, addressing issues such as poor adhesion or electrical resistance in conventional designs. The seed layer's placement ensures proper insulation and conductivity, making the package suitable for advanced semiconductor applications.
10. A semiconductor package, comprising: a core layer comprising a metal material; a semiconductor chip disposed on a top surface of the core layer, the semiconductor chip comprising a conductive pad; a conductive interconnect penetrating through the core layer to electrically connect to the conductive pad; an adhesive layer disposed between the core layer and the semiconductor chip, wherein the adhesive layer directly contacts the semiconductor chip; and an insulation layer between the core layer and the conductive interconnect.
This invention relates to semiconductor packaging, specifically addressing challenges in electrical connectivity and structural integrity in semiconductor devices. The semiconductor package includes a core layer made of a metal material, which provides mechanical support and thermal conductivity. A semiconductor chip is mounted on the top surface of the core layer, featuring a conductive pad for electrical connections. A conductive interconnect penetrates through the core layer, establishing an electrical connection to the semiconductor chip's conductive pad. An adhesive layer is positioned between the core layer and the semiconductor chip, ensuring direct contact with the chip to enhance bonding and stability. Additionally, an insulation layer is placed between the core layer and the conductive interconnect to prevent electrical short circuits and ensure proper insulation. The design improves reliability by maintaining electrical isolation while enabling efficient heat dissipation through the metal core. The package structure supports high-performance semiconductor applications by integrating robust electrical connections and thermal management in a compact form factor.
11. The semiconductor package as claimed in claim 10 , wherein the core layer has a bottom surface opposite to the top surface, the conductive interconnect comprises a plurality of vertical portions penetrating through the core layer and a horizontal portion extending in at least a portion of the bottom surface of the core layer.
A semiconductor package includes a core layer with a top surface and an opposing bottom surface. The package features a conductive interconnect that includes multiple vertical portions penetrating through the core layer and a horizontal portion extending along at least part of the bottom surface of the core layer. This design enables efficient electrical connections between different layers or components within the package. The vertical portions provide through-layer conductivity, while the horizontal portion allows for lateral signal routing or power distribution. The core layer serves as a structural base, supporting integrated circuits, passive components, or other electronic elements. The conductive interconnect may be used to connect these elements to external circuits or other layers within the package. This configuration improves signal integrity, reduces parasitic effects, and enhances thermal management by distributing heat more effectively. The package is particularly useful in high-density applications where compact, multi-layered designs are required, such as in advanced microprocessors, memory modules, or RF devices. The conductive interconnect's structure ensures reliable electrical performance while maintaining mechanical stability.
12. The semiconductor package as claimed in claim 11 , wherein the plurality of vertical portions are surrounded by the core layer and connected to the horizontal portion, and the horizontal portion directly contacts the bottom surface of the core layer.
This invention relates to semiconductor packaging, specifically addressing the challenge of improving electrical connectivity and structural integrity in semiconductor packages. The package includes a core layer with embedded conductive structures that enhance signal transmission and thermal management. The conductive structures consist of a horizontal portion and multiple vertical portions. The vertical portions are fully enclosed by the core layer and are electrically connected to the horizontal portion, which directly contacts the bottom surface of the core layer. This configuration ensures robust mechanical support while optimizing electrical performance by reducing signal path lengths and improving heat dissipation. The design also simplifies manufacturing by integrating the conductive structures within the core layer, eliminating the need for additional assembly steps. The invention is particularly useful in high-density semiconductor packages where efficient signal routing and thermal management are critical. The embedded conductive structures provide a reliable and scalable solution for advanced packaging applications.
13. The semiconductor package as claimed in claim 11 , wherein a height of each of the vertical portions of the conductive interconnect is greater than a thickness of the core layer.
A semiconductor package includes a core layer with conductive interconnects embedded within it. The conductive interconnects have vertical portions that extend through the core layer and horizontal portions that connect to other components. The vertical portions of the conductive interconnects are taller than the thickness of the core layer, allowing for improved electrical connections and signal integrity. This design enhances the package's performance by reducing signal loss and improving thermal management. The package may also include additional layers, such as redistribution layers, to further optimize electrical connections and thermal dissipation. The conductive interconnects are formed using a process that ensures precise alignment and reliable electrical conductivity. The overall structure supports high-density interconnects, making it suitable for advanced semiconductor applications. The taller vertical portions of the interconnects help accommodate variations in manufacturing tolerances while maintaining consistent electrical performance. This design is particularly useful in applications requiring high-speed signal transmission and efficient heat dissipation.
14. The semiconductor package as claimed in claim 10 , wherein the core layer has a coefficient of thermal expansion (CTE) equal to or smaller than 10×10 −6 /K.
This invention relates to semiconductor packaging, specifically addressing thermal expansion mismatches between components in a semiconductor package. The problem arises when different materials in a package expand at different rates due to temperature changes, leading to stress, warping, or failure. The invention provides a semiconductor package with a core layer designed to mitigate these issues. The core layer has a coefficient of thermal expansion (CTE) equal to or smaller than 10×10^-6/K, ensuring better thermal stability. The package includes a semiconductor chip mounted on the core layer, which is bonded to a substrate. The core layer may be made of materials like silicon, glass, or ceramic, chosen for their low CTE properties. The substrate can be a printed circuit board or another suitable base. The package may also include interconnect structures, such as through-silicon vias or bonding pads, to electrically connect the chip to the substrate. The low-CTE core layer reduces thermal stress during manufacturing and operation, improving reliability and performance. This design is particularly useful in high-performance or high-temperature applications where thermal expansion mismatches are critical.
15. A method for manufacturing a semiconductor package, comprising: providing a core layer having at least one through hole; disposing a semiconductor chip on the core layer, wherein the semiconductor chip comprises a conductive pad disposed above the at least one through hole; forming a seed layer in the at least one through hole; and disposing a conductive material layer in the at least one through hole to form a conductive interconnect directly contacting the conductive pad, wherein forming the seed layer in the at least one through hole is before disposing the conductive material layer in the at least one through hole, and the conductive material layer is formed on the seed layer.
The semiconductor packaging field addresses challenges in electrical interconnects between components. A method for manufacturing a semiconductor package involves creating a conductive pathway through a core layer. The process begins with a core layer containing at least one through hole. A semiconductor chip is placed on the core layer, positioned such that its conductive pad aligns above the through hole. A seed layer is then deposited inside the through hole to facilitate subsequent conductive material deposition. A conductive material layer is applied within the through hole, forming a conductive interconnect that directly contacts the semiconductor chip's conductive pad. The seed layer ensures proper adhesion and conductivity of the conductive material. This method enables efficient electrical connections between the chip and other components, improving package performance and reliability. The sequential steps—seed layer formation followed by conductive material deposition—ensure robust interconnects while maintaining structural integrity. The technique is particularly useful in high-density packaging where precise electrical pathways are critical.
16. The method as claimed in claim 15 , further comprising: forming an adhesive layer on a top surface of the core layer, wherein the semiconductor chip is disposed on the adhesive layer to be attached to the core layer.
This invention relates to semiconductor packaging, specifically a method for attaching a semiconductor chip to a core layer using an adhesive layer. The problem addressed is ensuring reliable adhesion between the semiconductor chip and the core layer during the packaging process. The method involves forming an adhesive layer on the top surface of the core layer, which provides a bonding interface for the semiconductor chip. The adhesive layer ensures proper alignment and secure attachment of the chip to the core layer, preventing detachment or misalignment during subsequent processing steps. The core layer serves as a structural support for the semiconductor chip, while the adhesive layer enhances mechanical stability and thermal conductivity between the chip and the core. This method improves the robustness of semiconductor packages by reducing the risk of delamination or failure due to thermal or mechanical stress. The adhesive layer can be applied using various techniques, such as spin coating, printing, or dispensing, depending on the specific requirements of the semiconductor device. The invention is particularly useful in advanced packaging applications where precise alignment and strong adhesion are critical for device performance and reliability.
17. The method as claimed in claim 16 , wherein forming the adhesive layer comprises: coating an adhesive material layer on the top surface of the core layer; and curing the adhesive material layer at a temperature of equal to or lower than 150° C. after disposing the semiconductor chip.
This invention relates to semiconductor packaging, specifically a method for forming an adhesive layer in a semiconductor device. The problem addressed is the need for a reliable adhesive layer that can securely bond a semiconductor chip to a core layer without requiring high-temperature curing, which can damage heat-sensitive components. The method involves coating an adhesive material layer onto the top surface of a core layer and then curing this layer at a temperature of 150°C or lower after the semiconductor chip is placed. This low-temperature curing ensures compatibility with temperature-sensitive materials while maintaining strong adhesion. The adhesive layer is part of a larger semiconductor packaging process that includes forming a core layer, disposing a semiconductor chip on the core layer, and forming an adhesive layer to bond the chip to the core. The method ensures structural integrity and thermal stability in the final semiconductor device.
18. The method as claimed in claim 15 , wherein the core layer comprises a metal material having a CTE from 2×10 −6 /K to 10×10 −6 /K, and the method further comprises: forming an insulation layer covering the core layer.
This invention relates to a method for fabricating a composite structure with improved thermal and mechanical properties. The method addresses the challenge of mismatched thermal expansion in composite materials, which can lead to stress, warping, or failure during thermal cycling. The core of the structure is made from a metal material with a coefficient of thermal expansion (CTE) between 2×10^-6/K and 10×10^-6/K, ensuring compatibility with adjacent layers. The method includes forming an insulation layer that covers the core layer, providing thermal and electrical insulation while maintaining structural integrity. The insulation layer may be applied using techniques such as deposition, coating, or lamination, depending on the material properties. The core layer may be a metal foil, plate, or other form, and the insulation layer may include materials like ceramics, polymers, or composites. The method ensures that the final structure has balanced thermal expansion, reducing stress and improving reliability in applications such as electronics, aerospace, or energy systems. The insulation layer also protects the core from environmental factors, enhancing durability. The invention focuses on optimizing material selection and layer formation to achieve a robust, thermally stable composite structure.
19. The method as claimed in claim 18 , wherein forming the insulation layer comprises: covering the core layer and filling the at least one through hole with an insulation material layer before disposing the semiconductor chip on the core layer; and partially removing the insulation material layer to form at least one opening within the at least one through hole, wherein the conductive material layer is disposed in the at least one opening within the at least one through hole.
This invention relates to semiconductor packaging, specifically methods for forming electrical connections between a semiconductor chip and a core layer with through holes. The problem addressed is efficiently creating reliable electrical pathways while maintaining insulation between conductive elements. The method involves forming an insulation layer over a core layer with at least one through hole, then filling the through hole with insulation material. After placing a semiconductor chip on the core layer, part of the insulation material is removed to create openings within the through hole. A conductive material layer is then deposited in these openings to form electrical connections. The insulation layer ensures proper isolation while the conductive pathways enable electrical communication between the chip and external components. This approach improves manufacturing efficiency by integrating insulation and conductive layer formation in a streamlined process. The technique is particularly useful in advanced packaging where high-density interconnects are required while maintaining electrical isolation. The method ensures proper alignment and contact between conductive elements and the semiconductor chip, enhancing overall device performance and reliability.
20. The semiconductor package as claimed in claim 1 , wherein the core layer further has an inner lateral surface extending between the top surface and the bottom surface, and the insulation layer covers the top surface, the bottom surface, and the inner lateral surface of the core layer.
This invention relates to semiconductor packaging, specifically addressing the need for improved insulation and structural integrity in semiconductor packages. The invention describes a semiconductor package with a core layer that includes a top surface, a bottom surface, and an inner lateral surface extending between them. An insulation layer is applied to cover the top surface, bottom surface, and the inner lateral surface of the core layer, ensuring comprehensive insulation and protection. The core layer may be a conductive material, such as metal, and the insulation layer prevents electrical shorting while maintaining structural stability. The insulation layer may be a dielectric material, such as polymer or ceramic, applied through methods like coating or deposition. This design enhances reliability by preventing electrical leakage and mechanical damage, particularly in high-density semiconductor packages where insulation and structural integrity are critical. The invention may also include additional features like conductive vias or interconnects within the core layer, which are insulated by the same insulation layer to avoid short circuits. The overall structure ensures robust electrical isolation and mechanical support, making it suitable for advanced semiconductor applications.
21. The semiconductor package as claimed in claim 10 , wherein the conductive interconnect comprises: a conductive layer penetrating through the core layer; and a seed layer between the insulation layer and the conductive layer.
A semiconductor package includes a core layer with a conductive interconnect structure. The conductive interconnect comprises a conductive layer that penetrates through the core layer, providing electrical connectivity across the package. An insulation layer surrounds the conductive interconnect to electrically isolate it from other components. A seed layer is positioned between the insulation layer and the conductive layer, facilitating the deposition and adhesion of the conductive layer during manufacturing. The seed layer enhances electrical conductivity and ensures reliable connections within the package. This structure is particularly useful in advanced semiconductor packaging where high-density interconnects are required, addressing challenges related to signal integrity, thermal management, and manufacturing yield. The conductive interconnect design supports efficient signal transmission while maintaining structural integrity in compact semiconductor devices.
22. The semiconductor package as claimed in claim 10 , wherein the core layer further has a bottom surface opposite to the top surface and an inner lateral surface extending between the top surface and the bottom surface, and the insulation layer covers the top surface, the bottom surface, and the inner lateral surface of the core layer.
This invention relates to semiconductor packaging, specifically addressing the need for improved insulation and structural integrity in semiconductor packages. The invention describes a semiconductor package with a core layer that has a top surface, a bottom surface opposite the top surface, and an inner lateral surface connecting the top and bottom surfaces. An insulation layer is applied to cover the top surface, bottom surface, and inner lateral surface of the core layer, providing comprehensive insulation and protection. The core layer may be a conductive or non-conductive material, such as metal or ceramic, and the insulation layer is designed to prevent electrical shorts and enhance durability. The insulation layer may be made of materials like polymer, oxide, or nitride, depending on the application. This design ensures that all exposed surfaces of the core layer are insulated, reducing the risk of electrical leakage and improving the package's reliability in high-performance or harsh environments. The invention may be used in integrated circuits, power electronics, or other semiconductor devices where insulation and structural stability are critical.
23. The semiconductor package as claimed in claim 10 , wherein the adhesive layer contacts a top surface of the insulation layer.
The semiconductor package relates to the field of semiconductor device packaging, specifically addressing challenges in electrical insulation and mechanical stability in integrated circuit (IC) packaging. The invention provides a semiconductor package with an improved adhesive layer configuration to enhance reliability and performance. The package includes a semiconductor die, an insulation layer, and an adhesive layer. The adhesive layer is positioned to contact a top surface of the insulation layer, ensuring secure bonding between the insulation layer and other package components. This configuration improves thermal and electrical insulation while maintaining mechanical stability, reducing the risk of delamination or failure under stress. The insulation layer may be made of a dielectric material, such as a polymer or ceramic, to provide electrical isolation and thermal management. The adhesive layer may be a conductive or non-conductive material, depending on the application, to facilitate bonding without compromising insulation properties. The semiconductor package is particularly useful in high-density ICs where thermal and electrical performance are critical, such as in microprocessors, memory chips, and power electronics. The invention ensures long-term reliability by minimizing thermal expansion mismatches and mechanical stress between layers.
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December 31, 2019
March 22, 2022
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