A moisture and hydrogen adsorption getter is provided. The moisture and hydrogen adsorption getter includes a silicon substrate including a concave portion and a convex portion, a silicon oxide layer conformally provided along a surface of the concave portion and a surface of the convex portion and configured to adsorb moisture, and a hydrogen adsorption pattern disposed on the silicon oxide layer. A portion of the silicon oxide layer is exposed between portions of the hydrogen adsorption pattern.
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1. A method of fabricating a moisture and hydrogen adsorption getter, the method comprising: preparing a silicon substrate including a concave portion and a convex portion; forming a plurality of holes extending downward from surfaces of the concave portion and the convex portion, wherein a plurality of metal particles is provided in the plurality of holes, forming a silicon oxide layer for adsorbing moisture; and forming a hydrogen adsorption pattern on the silicon oxide layer.
This invention relates to a method for fabricating a moisture and hydrogen adsorption getter, which is a device used to remove moisture and hydrogen from environments where they could cause degradation, such as in electronic or optical systems. The problem addressed is the need for an efficient, compact getter that can simultaneously adsorb both moisture and hydrogen, improving reliability in sensitive applications. The method involves preparing a silicon substrate with both concave and convex surface regions. A plurality of holes is formed extending downward from these surfaces, and metal particles are provided within these holes. A silicon oxide layer is then formed over the substrate to adsorb moisture. Additionally, a hydrogen adsorption pattern is formed on the silicon oxide layer to capture hydrogen molecules. The combination of the metal particles, silicon oxide layer, and hydrogen adsorption pattern creates a dual-function getter that effectively removes both moisture and hydrogen from the surrounding environment. The concave and convex portions of the substrate increase surface area, enhancing adsorption efficiency. The metal particles in the holes further improve hydrogen adsorption, while the silicon oxide layer provides a stable moisture-adsorbing surface. The hydrogen adsorption pattern ensures targeted and efficient hydrogen capture. This approach integrates multiple adsorption mechanisms into a single device, making it suitable for applications requiring simultaneous moisture and hydrogen control.
2. A method of fabricating a moisture and hydrogen adsorption getter, the method comprising: preparing a silicon substrate including a concave portion and a convex portion; forming a plurality of holes extending downward from surfaces of the concave portion and the convex portion, wherein a plurality of metal particles is provided in the plurality of holes, forming a silicon oxide layer for adsorbing moisture by immersing the silicon substrate in an acid solution; and forming a hydrogen adsorption pattern on the silicon oxide layer.
This invention relates to a method for fabricating a moisture and hydrogen adsorption getter, which is a device used to remove moisture and hydrogen from enclosed environments, such as semiconductor packaging or vacuum systems. The problem addressed is the need for an efficient and compact getter that can simultaneously adsorb both moisture and hydrogen, improving device reliability and performance. The method involves preparing a silicon substrate with both concave and convex surface regions. A plurality of holes is formed extending downward from the surfaces of these regions, and metal particles are provided within these holes. The silicon substrate is then immersed in an acid solution to form a silicon oxide layer, which serves to adsorb moisture. Additionally, a hydrogen adsorption pattern is formed on the silicon oxide layer to enable hydrogen adsorption. The combination of the metal particles, silicon oxide layer, and hydrogen adsorption pattern creates a dual-function getter capable of effectively capturing both moisture and hydrogen. The concave and convex portions of the substrate increase surface area, enhancing adsorption efficiency. The metal particles in the holes further improve adsorption capacity, while the silicon oxide layer provides a stable moisture-adsorbing surface. The hydrogen adsorption pattern ensures that hydrogen molecules are also effectively trapped, making the getter suitable for applications requiring both moisture and hydrogen control.
3. The method of claim 2 , further comprising: forming a plurality of holes extending downward from surfaces of the concave portion and the convex portion before the forming of the silicon oxide layer.
This invention relates to semiconductor device fabrication, specifically to methods for forming insulating layers on three-dimensional structures with improved uniformity. The problem addressed is the difficulty in depositing conformal insulating layers, such as silicon oxide, over complex topographies like concave and convex surfaces, which can lead to thickness variations and defects. The method involves forming a plurality of holes extending downward from the surfaces of both concave and convex portions of a substrate before depositing the silicon oxide layer. These holes are created to enhance the uniformity of the subsequent oxide deposition process. The holes may be formed using etching techniques, such as reactive ion etching or wet etching, to create vertical or tapered openings. The presence of these holes allows the deposition process to achieve better step coverage, reducing thickness variations and improving the overall quality of the insulating layer. The method may also include additional steps such as cleaning the substrate surface before hole formation, adjusting the hole dimensions to optimize deposition uniformity, and performing post-deposition annealing to enhance film properties. The holes can be filled or left unfilled depending on the specific application requirements. This approach is particularly useful in advanced semiconductor manufacturing where high-aspect-ratio structures and precise insulation are critical.
4. The method of claim 2 , wherein the preparing of the silicon substrate comprises: forming a mask film that covers a first region of the silicon substrate and exposes a second region of the silicon substrate; and immersing the silicon substrate in a basic solution to form the concave portion and the convex portion on the second region of the silicon substrate.
This invention relates to semiconductor fabrication, specifically a method for structuring a silicon substrate to create concave and convex surface features. The process addresses the need for precise surface patterning in semiconductor devices, such as for enhancing light absorption in solar cells or improving adhesion in microelectronic components. The method involves preparing a silicon substrate by first forming a mask film that selectively covers a first region while leaving a second region exposed. The substrate is then immersed in a basic solution, which selectively etches the exposed second region to form concave and convex portions. The mask film protects the first region from etching, ensuring only the targeted second region is modified. This etching process creates a structured surface with controlled topography, which can be tailored for specific applications by adjusting the mask pattern and etching conditions. The mask film acts as a protective layer, allowing precise control over the areas subjected to etching. The basic solution chemically reacts with the exposed silicon, dissolving it to form the desired concave and convex features. This technique enables the fabrication of micro- and nanoscale structures on silicon surfaces, which are critical for advanced semiconductor devices. The method is particularly useful in applications requiring enhanced surface functionality, such as improved optical properties or mechanical interactions.
5. The method of claim 2 , wherein the forming of the hydrogen adsorption pattern comprises: forming a hydrogen adsorption preliminary pattern on the silicon oxide layer; and oxidizing the hydrogen adsorption preliminary pattern by a thermal treatment method to form the hydrogen adsorption pattern.
This invention relates to semiconductor fabrication, specifically to methods for forming hydrogen adsorption patterns on silicon oxide layers to improve device performance. The problem addressed is the need for precise control of hydrogen adsorption to enhance electrical properties, such as reducing interface trap density in semiconductor devices. The method involves forming a hydrogen adsorption pattern on a silicon oxide layer. First, a hydrogen adsorption preliminary pattern is created on the silicon oxide layer. This preliminary pattern is then subjected to a thermal treatment, which oxidizes it to form the final hydrogen adsorption pattern. The thermal treatment ensures uniform and stable hydrogen adsorption, improving the reliability and performance of semiconductor devices. The preliminary pattern may be formed using techniques such as plasma treatment or chemical deposition, which introduce hydrogen atoms onto the silicon oxide surface. The thermal treatment step modifies the chemical state of the adsorbed hydrogen, enhancing its stability and effectiveness in passivating defects at the silicon-oxide interface. This process is particularly useful in advanced semiconductor manufacturing, where precise control of hydrogen adsorption is critical for achieving high-performance devices.
6. A method of fabricating a moisture and hydrogen adsorption getter, the method comprising: preparing a silicon substrate including a concave portion and a convex portion; forming a silicon oxide layer for adsorbing moisture by immersing the silicon substrate in an acid solution; and forming a hydrogen adsorption pattern on the silicon oxide layer, forming a plurality of holes extending downward from surfaces of the concave portion and the convex portion before the forming of the silicon oxide layer, wherein the forming of the holes comprises: forming a metal thin layer on the concave portion and the convex portion; thermally treating the metal thin layer formed on the concave portion and the convex portion to form metal particles; and forming the holes extending downward from the surfaces corresponding to the metal particles by a method of etching the silicon substrate including the concave portion and the convex portion by using the metal particles as a catalyst.
This invention relates to a method for fabricating a moisture and hydrogen adsorption getter, addressing the need for efficient removal of moisture and hydrogen in semiconductor or vacuum environments. The method involves preparing a silicon substrate with both concave and convex surface features. A silicon oxide layer is formed on the substrate by immersing it in an acid solution, which enables moisture adsorption. Additionally, a hydrogen adsorption pattern is created on this oxide layer. Before forming the oxide layer, the method includes creating a plurality of holes extending downward from the surfaces of both the concave and convex portions of the substrate. This is achieved by first depositing a metal thin layer on these surfaces, followed by thermal treatment to form metal particles. These particles then act as catalysts in an etching process, where the silicon substrate is etched to form the holes. The resulting structure combines moisture adsorption through the oxide layer and hydrogen adsorption through the patterned holes, enhancing overall gettering performance. The method leverages catalytic etching to create a high-surface-area structure for improved gas adsorption efficiency.
7. A method of fabricating a moisture and hydrogen adsorption getter, the method comprising: preparing a silicon substrate including a concave portion and a convex portion; forming a silicon oxide layer for adsorbing moisture by immersing the silicon substrate in an acid solution; forming a hydrogen adsorption pattern on the silicon oxide layer; and forming passivation metal catalyst particles on the hydrogen adsorption pattern, wherein the forming of the passivation metal catalyst particles comprises: forming a metal catalyst pattern on the hydrogen adsorption pattern; and thermally treating the metal catalyst pattern to form the passivation metal catalyst particles.
This invention relates to the fabrication of a moisture and hydrogen adsorption getter, which is a device used to remove moisture and hydrogen from environments where these substances can cause degradation, such as in electronic or optical systems. The problem addressed is the need for an efficient and reliable getter that can simultaneously adsorb both moisture and hydrogen, improving the longevity and performance of sensitive components. The method involves preparing a silicon substrate with both concave and convex portions to increase surface area and enhance adsorption efficiency. A silicon oxide layer is then formed on the substrate by immersing it in an acid solution, creating a surface that effectively adsorbs moisture. Next, a hydrogen adsorption pattern is formed on the silicon oxide layer, providing a structured surface for hydrogen capture. Finally, passivation metal catalyst particles are deposited on the hydrogen adsorption pattern to further enhance hydrogen adsorption. This is done by first forming a metal catalyst pattern on the hydrogen adsorption layer and then thermally treating it to convert the pattern into discrete, passivated metal catalyst particles. The combination of these steps results in a getter that efficiently adsorbs both moisture and hydrogen, improving environmental stability in applications where these contaminants are problematic.
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October 16, 2020
March 29, 2022
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