Techniques are provided to fabricate semiconductor devices having a nanosheet field-effect transistor device disposed on a semiconductor substrate. The nanosheet field-effect transistor device includes a nanosheet stack structure including a semiconductor channel layer and a source/drain region in contact with an end portion of the semiconductor channel layer of the nanosheet stack structure. A trench formed in the source/drain region is filled with a metal-based material. The metal-based material filling the trench in the source/drain region mitigates the effect of source/drain material overfill on the contact resistance of the semiconductor device.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for fabricating a semiconductor device, comprising: forming a nanosheet stack structure on a semiconductor substrate, wherein the nanosheet stack structure comprises a semiconductor channel layer; forming a gate structure on the nanosheet stack structure; forming a source/drain region in contact with an end portion of the semiconductor channel layer of the nanosheet stack structure; forming a sacrificial layer on a top surface of the source/drain region and sidewalls of the gate structure to define an opening; depositing an interlevel dielectric layer in the opening; etching a trench in the source/drain region through the interlevel dielectric layer and at least a portion of the sacrificial layer on the top surface of the source/drain region; removing a remaining portion of the sacrificial layer on the sidewalls of the gate structure after etching the trench; and filling the trench with a metal-based material.
2. The method of claim 1 , wherein the trench extends to a depth in the source/drain region at least equal to a depth of the semiconductor channel layer in the nanosheet stack structure.
3. The method of claim 1 , wherein forming the source/drain region comprises epitaxially growing semiconductor material on the end portion of the semiconductor channel layer.
4. The method of claim 3 , wherein forming the source/drain region comprises epitaxially growing semiconductor material on the end portion of the semiconductor channel layer and on a portion of the semiconductor substrate.
5. The method of claim 3 , wherein forming the source/drain region comprises epitaxially growing semiconductor material on the end portion of the semiconductor channel layer and on a portion of an oxide layer formed over a portion of the semiconductor substrate.
6. The method of claim 5 , wherein the trench extends through the source/drain region to the oxide layer.
7. The method of claim 1 , further comprising: forming a dummy gate structure over the nanosheet stack structure; forming a gate insulating spacer on vertical sidewalls of the dummy gate structure, wherein end portions of the semiconductor channel layer are exposed through the gate insulating spacer; removing the dummy gate structure to form a gate recess region that exposes a portion of the nanosheet stack structure surrounded by the gate insulating spacer; etching at least the portion of the nanosheet stack structure in the gate recess region to form a space between the semiconductor channel layer and at least one other layer of the nanosheet stack structure; and forming a metal gate structure within the gate recess region.
8. The method of claim 1 , wherein forming the nanosheet stack structure on the semiconductor substrate comprises: epitaxially growing a sacrificial nanosheet layer on the semiconductor substrate; epitaxially growing the semiconductor channel layer on the sacrificial nanosheet layer; and patterning the sacrificial nanosheet layer and the semiconductor channel layer to form the nanosheet stack structure.
9. The method of claim 7 , wherein the source/drain region is formed in contact with at least a portion of the gate insulating spacer, and wherein the sacrificial layer is formed in contact with at least a portion of the gate insulating spacer.
10. A method for fabricating a semiconductor device, comprising: forming a nanosheet stack structure on a semiconductor substrate, wherein the nanosheet stack structure comprises a stack of alternating semiconductor layers which comprises sacrificial nanosheet layers and nanosheet channel layers, wherein each nanosheet channel layer is disposed between sacrificial nanosheet layers in the nanosheet stack structure; forming a dummy gate over the nanosheet stack structure to define a gate region; forming a gate sidewall spacer surrounding the dummy gate; forming a source/drain region in contact with end portions of the nanosheet channel layers of the nanosheet stack structure; forming a sacrificial layer on a top surface of the source/drain region and sidewalls of the gate sidewall spacer to define an opening; depositing an interlevel dielectric layer in the opening; etching a trench in the source/drain region through the interlevel dielectric layer and at least a portion of the sacrificial layer on the top surface of the source/drain region; removing a remaining portion of the sacrificial layer on the sidewalls of the gate sidewall spacer after etching the trench; and filling the trench with a metal-based material.
11. The method of claim 10 , wherein the trench extends to a depth in the source/drain region at least equal to a depth of the nanosheet channel layer in the nanosheet stack structure.
12. The method of claim 10 , wherein forming the source/drain region comprises epitaxially growing semiconductor material on the end portions of the nanosheet channel layer and on a portion of the semiconductor substrate.
13. The method of claim 10 , wherein forming the source/drain region comprises epitaxially growing semiconductor material on the end portions of the nanosheet channel layer and on a portion of an oxide layer formed over a portion of the semiconductor substrate, and wherein the trench extends through the source/drain region to the oxide layer.
14. The method of claim 10 , wherein forming the dummy gate over the nanosheet stack structure to define the gate region; comprises: forming a dummy gate structure over the nanosheet stack structure; forming a gate insulating spacer on vertical sidewalls of the dummy gate structure, wherein end portions of the nanosheet channel layers are exposed through the gate insulating spacer; removing the dummy gate structure to form a gate recess region that exposes a portion of the nanosheet stack structure surrounded by the gate insulating spacer; etching at least the portion of the nanosheet stack structure in the gate recess region to form a space between the nanosheet channel layer and at least one other layer of the nanosheet stack structure; and forming a metal gate structure within the gate recess region.
15. The method of claim 14 , wherein the source/drain region is formed in contact with at least a portion of the gate insulating spacer, and wherein the sacrificial layer is formed in contact with at least a portion of the gate insulating spacer.
16. The method of claim 10 , wherein forming the nanosheet stack structure on the semiconductor substrate comprises: epitaxially growing a sacrificial nanosheet layer on the semiconductor substrate; epitaxially growing the nanosheet channel layer on the sacrificial nanosheet layer; and patterning the sacrificial nanosheet layer and the nanosheet channel layer to form the nanosheet stack structure.
17. A method for fabricating a semiconductor device, comprising: forming a nanosheet stack structure on a semiconductor substrate, wherein the nanosheet stack structure comprises a semiconductor channel layer; forming a dummy gate structure over the nanosheet stack structure; forming a gate insulating spacer on vertical sidewalls of the dummy gate structure, wherein end portions of the semiconductor channel layer are exposed through the gate insulating spacer; forming an oxide layer over a portion of the semiconductor substrate; forming a source/drain region on a portion of the oxide layer formed over the portion of the semiconductor substrate, in contact with an end portion of the semiconductor channel layer of the nanosheet stack structure and in contact with at least a portion of the gate insulating spacer; forming a sacrificial layer on a top surface of the source/drain region and in contact with at least a portion of sidewalls of the gate insulating spacer to define an opening; depositing an interlevel dielectric layer in the opening; removing the dummy gate structure to form a gate recess region that exposes a portion of the nanosheet stack structure surrounded by the gate insulating spacer; etching at least the portion of the nanosheet stack structure in the gate recess region to form a space between the semiconductor channel layer and at least one other layer of the nanosheet stack structure; forming a metal gate structure within the gate recess region; etching a trench in the source/drain region through the interlevel dielectric layer and at least a portion of the sacrificial layer on the top surface of the source/drain region, the trench extending through the source/drain region to the oxide layer; and filling the trench with a metal-based material.
18. The method of claim 17 , wherein the trench extends to a depth in the source/drain region at least equal to a depth of the semiconductor channel layer in the nanosheet stack structure.
19. The method of claim 17 , wherein forming the source/drain region comprises epitaxially growing semiconductor material on the end portion of the semiconductor channel layer and on the portion of the oxide layer formed over the portion of the semiconductor substrate.
20. The method of claim 17 , wherein the source/drain region is formed in contact with the portion of the oxide layer formed over the portion of the semiconductor substrate.
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March 1, 2019
March 29, 2022
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