A structure that can be used to manufacture at least one active layer made of a III-V material thereon includes a substrate comprising a carrier having a main face, a dielectric layer located on the main face of the carrier, and a plurality of single-crystal semiconductor islands located directly on the dielectric layer. The islands have an upper surface in order to serve as a seed surface for the growth of the active layer. The structure further comprises a seed layer located between the single-crystal semiconductor islands, directly on the portion of the dielectric layer that is not covered by the islands, without masking the upper surface of the islands, so that the dielectric layer is not exposed to the external environment.
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1. A semiconductor substrate structure for producing at least one active layer made of a III-V material thereon, comprising: a carrier having a main face; a dielectric layer located over the main face of the carrier; a plurality of single-crystal semiconductor islands located directly on the dielectric layer, each of the plurality of single-crystal semiconductor islands having an exposed upper surface to be used as a seed surface for growth of the at least one active layer; and a polycrystalline AlN seed layer located between the single-crystal semiconductor islands, directly on a portion of the dielectric layer not covered by the single-crystal semiconductor islands such that the portion of the dielectric layer is not exposed to its environment, the polycrystalline AlN seed layer exhibiting a first thickness less than a second thickness of the plurality of single-crystal semiconductor islands.
This invention relates to semiconductor substrate structures designed for growing III-V compound semiconductor active layers, addressing challenges in integrating III-V materials with conventional silicon-based substrates. The structure includes a carrier with a main face, over which a dielectric layer is deposited. A plurality of single-crystal semiconductor islands are positioned directly on the dielectric layer, each with an exposed upper surface serving as a seed for subsequent III-V material growth. Between these islands, a polycrystalline AlN seed layer is deposited directly on the dielectric layer, covering the areas not occupied by the single-crystal islands. The AlN layer has a thickness less than that of the single-crystal islands, ensuring the dielectric layer remains fully encapsulated. This configuration enables selective growth of III-V materials on the single-crystal islands while preventing unwanted nucleation on the dielectric, improving material quality and device performance. The polycrystalline AlN layer also provides a stable interface for subsequent processing steps, enhancing compatibility with silicon-based fabrication processes. The invention is particularly useful in applications requiring high-quality III-V semiconductor layers on non-native substrates, such as optoelectronic devices and advanced transistors.
2. The semiconductor substrate structure of claim 1 , wherein the carrier comprises silicon or sapphire.
A semiconductor substrate structure includes a carrier layer and a semiconductor layer, where the carrier provides mechanical support and the semiconductor layer is used for device fabrication. The carrier layer is composed of silicon or sapphire, which are materials known for their rigidity and thermal stability. Silicon is widely used due to its compatibility with existing semiconductor manufacturing processes, while sapphire offers superior thermal conductivity and electrical insulation, making it suitable for high-performance applications. The semiconductor layer, typically composed of materials like silicon, gallium arsenide, or other compound semiconductors, is bonded to the carrier layer to form a stable substrate. This structure enables the fabrication of integrated circuits, sensors, or optoelectronic devices with improved mechanical strength and thermal management. The use of silicon or sapphire as the carrier material ensures compatibility with various semiconductor processes, including epitaxial growth, lithography, and etching, while maintaining structural integrity during high-temperature processing. This design is particularly useful in applications requiring robust substrates, such as power electronics, RF devices, or high-density integrated circuits.
3. The semiconductor substrate structure of claim 2 , wherein the dielectric layer comprises silicon oxide and/or silicon nitride.
The semiconductor substrate structure includes a semiconductor substrate with a dielectric layer formed on its surface. The dielectric layer is composed of silicon oxide, silicon nitride, or a combination of both materials. This structure is designed to provide electrical insulation and passivation for semiconductor devices, preventing current leakage and enhancing device reliability. The dielectric layer can be deposited using techniques such as chemical vapor deposition (CVD) or physical vapor deposition (PVD), ensuring uniform coverage and controlled thickness. Silicon oxide offers excellent insulating properties and compatibility with silicon-based substrates, while silicon nitride provides superior barrier characteristics against moisture and contaminants. The combination of these materials can be tailored to meet specific application requirements, such as high-voltage isolation or thermal stability. This structure is particularly useful in integrated circuits, where reliable insulation is critical for device performance and longevity. The use of silicon oxide and/or silicon nitride ensures compatibility with standard semiconductor fabrication processes, making it suitable for mass production.
4. The semiconductor substrate structure of claim 3 , wherein the single-crystal semiconductor islands comprise a III-V material.
The invention relates to semiconductor substrate structures, specifically those incorporating single-crystal semiconductor islands. These structures address challenges in integrating high-performance semiconductor materials with conventional substrates, such as silicon, to enhance electronic and optoelectronic device performance. The structure includes a substrate with a surface layer containing single-crystal semiconductor islands, which are isolated from each other and embedded within an insulating material. The islands are formed by selective epitaxial growth, ensuring precise control over their size, shape, and crystallographic orientation. The insulating material electrically isolates the islands, preventing unwanted interactions while maintaining mechanical stability. The islands can be composed of various semiconductor materials, including III-V compounds like gallium arsenide or indium phosphide, which offer superior electron mobility and optical properties compared to silicon. This configuration enables the fabrication of advanced devices, such as high-speed transistors, lasers, and photodetectors, directly on a silicon substrate, overcoming limitations in material compatibility and performance. The structure also facilitates integration with complementary metal-oxide-semiconductor (CMOS) technology, enabling hybrid systems with enhanced functionality. The invention provides a scalable solution for combining diverse semiconductor materials in a single platform, addressing the demand for high-performance, heterogeneous integration in modern electronics.
5. The semiconductor substrate structure of claim 4 , wherein the single-crystal semiconductor islands comprise InGaN.
The invention relates to semiconductor substrate structures incorporating single-crystal semiconductor islands, particularly those composed of InGaN. These structures are designed to address challenges in semiconductor fabrication, such as achieving high-quality epitaxial growth of compound semiconductors on non-native substrates. The InGaN islands are formed on a substrate, typically through selective area growth techniques, to enable precise control over material properties and device performance. The use of InGaN, a ternary alloy of indium, gallium, and nitrogen, is advantageous for applications in optoelectronics, such as light-emitting diodes (LEDs) and laser diodes, due to its tunable bandgap and high electron mobility. The structure may include additional layers or features, such as buffer layers or patterned masks, to enhance crystal quality and reduce defects. The invention aims to improve the integration of III-V semiconductors with silicon or other substrates, overcoming lattice mismatch and thermal expansion issues that degrade device performance. By leveraging InGaN's properties, the structure enables efficient light emission, high-speed electronics, and other advanced functionalities in semiconductor devices.
6. The semiconductor substrate structure of claim 1 , wherein the dielectric layer comprises silicon oxide and/or silicon nitride.
A semiconductor substrate structure includes a substrate with a dielectric layer formed on its surface. The dielectric layer is composed of silicon oxide, silicon nitride, or a combination of both materials. This structure is used in semiconductor manufacturing to provide electrical insulation, passivation, or as a barrier layer in integrated circuits. Silicon oxide and silicon nitride are commonly used due to their high dielectric strength, thermal stability, and compatibility with semiconductor processing techniques. The dielectric layer may be deposited using chemical vapor deposition (CVD), physical vapor deposition (PVD), or other thin-film deposition methods. The choice of material depends on the specific application, such as gate insulation, interlayer dielectric, or protective coating. Silicon oxide offers excellent insulating properties and is widely used in metal-oxide-semiconductor (MOS) devices, while silicon nitride provides better moisture resistance and mechanical strength, often used in passivation layers. The combination of both materials can enhance performance by leveraging the strengths of each. This structure is essential for modern semiconductor devices, ensuring reliable electrical isolation and protection against environmental factors.
7. The semiconductor substrate structure of claim 1 , wherein the single-crystal semiconductor islands comprise a III-V material.
The invention relates to semiconductor substrate structures incorporating single-crystal semiconductor islands, particularly those composed of III-V materials. These structures address challenges in integrating high-performance III-V materials with conventional semiconductor substrates, such as silicon, to enhance electronic and optoelectronic device performance. The III-V semiconductor islands are formed on a substrate, enabling advanced applications in high-speed transistors, lasers, and photodetectors where silicon alone is insufficient. The islands are isolated from the substrate by a dielectric layer, ensuring electrical and thermal insulation while maintaining mechanical stability. This isolation prevents lattice mismatch issues between the III-V material and the substrate, which can degrade device performance. The III-V islands may be grown epitaxially or transferred onto the substrate, allowing precise control over their composition and properties. The structure supports the integration of multiple III-V materials, enabling heterojunction devices with tailored electronic and optical characteristics. The invention also includes methods for fabricating these structures, such as selective area growth, wafer bonding, or layer transfer techniques. These methods ensure high-quality III-V material integration while minimizing defects. The resulting substrate structure is suitable for applications in RF electronics, photonics, and power devices, where III-V materials offer superior performance compared to silicon. The invention overcomes limitations in conventional semiconductor substrates by leveraging the unique properties of III-V compounds, such as high electron mobility and direct bandgap characteristics.
8. The semiconductor substrate structure of claim 7 , wherein the single-crystal semiconductor islands comprise InGaN.
The semiconductor substrate structure involves a substrate with single-crystal semiconductor islands embedded in an insulating layer, where the islands are composed of InGaN. These islands are formed by selectively growing single-crystal semiconductor material on a seed layer, which is patterned to define the island locations. The seed layer is then removed, leaving the islands suspended within the insulating layer. The structure is designed to integrate high-quality single-crystal semiconductor materials with different lattice constants onto a single substrate, addressing challenges in heterogeneous integration. The InGaN islands enable applications in optoelectronic devices, such as LEDs or lasers, by providing a lattice-matched platform for epitaxial growth. The insulating layer electrically isolates the islands, allowing for independent device operation. The process avoids lattice mismatch issues that arise when directly growing dissimilar materials on a substrate, ensuring high crystal quality and performance. This approach is particularly useful for combining materials with incompatible lattice constants, such as integrating III-V semiconductors with silicon or other substrates. The resulting structure enables advanced semiconductor devices with improved functionality and efficiency.
9. A method for producing a semiconductor substrate structure, comprising: providing a structure including a carrier having a main face, a dielectric layer located over the main face of the carrier, and a plurality of single-crystal semiconductor islands located directly on the dielectric layer, each of the plurality of single-crystal semiconductor islands having an exposed upper surface to be used as a seed surface for growth of an active layer of III-V material; and prior to growth on the exposed upper surface, forming a polycrystalline AlN seed layer between the single-crystal semiconductor islands and directly on a portion of the dielectric layer that is not covered by the single-crystal semiconductor islands such that the portion of the dielectric layer is not exposed to an external environment, the polycrystalline AlN seed layer exhibiting a first thickness less than a second thickness of the plurality of single-crystal semiconductor islands.
This invention relates to semiconductor substrate fabrication, specifically addressing challenges in integrating III-V materials with silicon-based substrates for advanced electronic and optoelectronic devices. The problem involves growing high-quality III-V active layers on silicon while preventing defects and contamination from the underlying dielectric layer. The method involves providing a substrate structure with a carrier, a dielectric layer on the carrier's main face, and multiple single-crystal semiconductor islands directly on the dielectric layer. These islands serve as seed surfaces for subsequent III-V material growth. Before this growth, a polycrystalline AlN seed layer is formed between the islands, covering the exposed portions of the dielectric layer. This AlN layer has a thickness less than that of the semiconductor islands, ensuring the dielectric remains protected from external environments while providing a suitable nucleation surface for III-V deposition. The polycrystalline AlN layer prevents direct exposure of the dielectric to the growth environment, reducing defects and improving material quality. The technique enables efficient integration of III-V materials on silicon substrates for applications in high-performance electronics and photonics.
10. The method according to claim 9 , wherein forming the polycrystalline AlN seed layer comprises depositing the polycrystalline AlN seed layer onto and between the single-crystal semiconductor islands, and then selectively removing portions of the polycrystalline AlN seed layer located on the single-crystal semiconductor islands.
This invention relates to semiconductor fabrication, specifically to methods for forming a polycrystalline aluminum nitride (AlN) seed layer on a substrate with single-crystal semiconductor islands. The technology addresses challenges in integrating AlN-based materials with existing semiconductor processes, particularly in ensuring proper nucleation and growth of subsequent layers while maintaining structural integrity. The method involves depositing a polycrystalline AlN seed layer onto a substrate that already has single-crystal semiconductor islands. The deposition covers both the islands and the regions between them. After deposition, portions of the polycrystalline AlN seed layer located directly on the single-crystal semiconductor islands are selectively removed, leaving the seed layer only in the gaps between the islands. This selective removal ensures that the AlN seed layer is properly positioned for subsequent processing steps, such as epitaxial growth of additional semiconductor or insulating layers. The selective removal step may involve etching or other material removal techniques that target the AlN layer while preserving the underlying single-crystal semiconductor islands. This approach enables precise control over the AlN seed layer's placement, which is critical for applications requiring high-quality crystal growth or electrical isolation between semiconductor regions. The method is particularly useful in power electronics, RF devices, and other applications where AlN-based materials are integrated with silicon or other semiconductor substrates.
11. The method of claim 10 , wherein selectively removing the portions of the polycrystalline AlN seed layer located on the single-crystal semiconductor islands comprises subjecting the portions of the polycrystalline AlN seed layer located on the single-crystal semiconductor islands to a mechanical-chemical polishing process.
This invention relates to semiconductor fabrication, specifically to methods for selectively removing portions of a polycrystalline aluminum nitride (AlN) seed layer from single-crystal semiconductor islands. The process addresses challenges in semiconductor device manufacturing where unwanted polycrystalline AlN material must be precisely removed without damaging the underlying single-crystal semiconductor structures. The method involves a mechanical-chemical polishing process to selectively remove the polycrystalline AlN seed layer portions located on the single-crystal semiconductor islands. This polishing process combines mechanical abrasion with chemical etching to achieve precise material removal. The mechanical component uses abrasive particles to physically grind away the AlN layer, while the chemical component employs a reactive solution to dissolve the AlN material, enhancing the removal efficiency and selectivity. The process ensures that only the AlN on the single-crystal semiconductor islands is removed, leaving the desired regions intact for subsequent fabrication steps. This selective removal technique is critical in applications requiring high-precision patterning of semiconductor materials, such as in the fabrication of advanced electronic and optoelectronic devices. The method improves manufacturing yield and device performance by minimizing damage to the underlying semiconductor structures while ensuring clean and accurate removal of the unwanted AlN layer.
12. The method of claim 9 , wherein forming the polycrystalline AlN seed layer comprises selectively forming a protective layer on the single-crystal semiconductor islands, depositing the polycrystalline AlN seed layer onto the protective layer and onto an exposed surface of the dielectric layer between the single-crystal semiconductor islands, and selectively removing the protective layer and portions of the polycrystalline AlN seed layer located on the single-crystal semiconductor islands.
This invention relates to semiconductor fabrication, specifically to methods for forming a polycrystalline aluminum nitride (AlN) seed layer on a substrate with single-crystal semiconductor islands. The process addresses challenges in integrating AlN-based materials with existing semiconductor structures, particularly when AlN needs to be deposited selectively to avoid disrupting underlying single-crystal semiconductor regions. The method involves first forming a protective layer on single-crystal semiconductor islands present on a dielectric layer. A polycrystalline AlN seed layer is then deposited over the entire substrate, covering both the protective layer and the exposed dielectric layer between the islands. Next, the protective layer and the portions of the polycrystalline AlN seed layer directly above the single-crystal semiconductor islands are selectively removed, leaving the AlN seed layer only on the dielectric regions. This selective deposition and removal process ensures that the AlN seed layer is precisely positioned, avoiding interference with the single-crystal semiconductor islands while providing a suitable foundation for subsequent AlN-based material growth. The technique is useful in applications requiring selective area growth of AlN or related compounds, such as in power electronics or RF devices.
13. The method of claim 12 , wherein the protective layer comprises a photosensitive resin and selectively forming the protective layer on the single-crystal semiconductor islands comprises using a photolithography process to selectively form the protective layer on the single-crystal semiconductor islands.
This invention relates to semiconductor fabrication, specifically to methods for forming protective layers on single-crystal semiconductor islands. The problem addressed is the need for precise and selective deposition of protective layers during semiconductor device manufacturing to prevent damage to critical regions while allowing other areas to undergo further processing. The method involves forming a protective layer composed of a photosensitive resin on single-crystal semiconductor islands. The key innovation is the use of a photolithography process to selectively deposit the protective layer only on the desired semiconductor islands. This selective formation ensures that the protective layer is precisely applied, covering only the regions that require protection while leaving other areas exposed for subsequent processing steps. The photolithography process involves exposing the photosensitive resin to light in a controlled pattern, causing it to harden or remain soluble in specific regions, followed by development to remove unexposed or exposed areas, depending on the resin type. This selective deposition prevents contamination or damage to the semiconductor islands during later fabrication steps, such as etching or deposition processes. The method improves manufacturing yield and reliability by ensuring that only the intended regions are protected, reducing the risk of defects and enhancing the overall performance of the semiconductor devices. The use of a photosensitive resin allows for high-precision patterning, compatible with advanced semiconductor fabrication techniques.
14. The method of claim 12 , wherein selectively removing the protective layer and the portions of the polycrystalline AlN seed layer located on the single-crystal semiconductor islands comprises chemically etching the protective layer and/or portions of the polycrystalline AlN seed layer located on the single-crystal semiconductor islands.
This invention relates to semiconductor fabrication, specifically methods for selectively removing protective layers and polycrystalline aluminum nitride (AlN) seed layers from single-crystal semiconductor islands. The process addresses challenges in semiconductor manufacturing where precise removal of unwanted material layers is critical for device performance and yield. The method involves chemically etching the protective layer and portions of the polycrystalline AlN seed layer that are deposited on single-crystal semiconductor islands. The selective removal ensures that only the desired regions of the AlN seed layer remain, which is essential for subsequent epitaxial growth or other processing steps. The chemical etching process is carefully controlled to avoid damaging the underlying single-crystal semiconductor islands or adjacent structures. This selective removal technique improves the quality and uniformity of the semiconductor devices by preventing contamination or defects that could arise from residual material. The method is particularly useful in applications requiring high-precision patterning of semiconductor layers, such as in power electronics, RF devices, or optoelectronic components. By optimizing the etching conditions, the process ensures high selectivity and minimal undercutting, maintaining structural integrity while achieving the desired material removal.
15. A method for manufacturing a semiconductor device, comprising: providing a substrate structure including: a carrier having a main face; a dielectric layer located over the main face of the carrier; a plurality of single-crystal semiconductor islands located directly on the dielectric layer, each of the plurality of single-crystal semiconductor islands having an exposed upper surface to be used as a seed surface for growth of at least one active layer; and a polycrystalline AlN seed layer located between the single-crystal semiconductor islands, directly on a portion of the dielectric layer not covered by the single-crystal semiconductor islands such that the portion of the dielectric layer is not exposed to its environment, the polycrystalline AlN seed layer exhibiting a first thickness less than a second thickness of the plurality of single-crystal semiconductor islands; and forming the at least one active layer of a III-V material on the single-crystal semiconductor islands.
This invention relates to semiconductor device manufacturing, specifically addressing challenges in integrating III-V materials with silicon substrates for advanced electronic and optoelectronic applications. The method involves creating a hybrid substrate structure to enable high-quality III-V material growth on silicon. The process begins with a substrate structure featuring a carrier with a main face, a dielectric layer over the carrier, and multiple single-crystal semiconductor islands directly on the dielectric layer. These islands serve as seed surfaces for subsequent III-V material growth. Between the islands, a polycrystalline AlN seed layer is deposited directly on the dielectric layer, covering portions not occupied by the single-crystal islands. The AlN layer has a thickness less than that of the single-crystal islands, ensuring the dielectric remains protected from environmental exposure. The method then proceeds to form at least one active layer of a III-V material on the single-crystal semiconductor islands. This approach facilitates the integration of III-V materials with silicon substrates while maintaining structural integrity and performance, addressing compatibility and quality issues in heterogeneous integration.
16. The semiconductor substrate structure of claim 1 , wherein the polycrystalline AlN seed layer comprises a plurality of polycrystalline AlN layers stacked on top of one another.
The semiconductor substrate structure relates to the field of semiconductor materials and manufacturing, specifically addressing challenges in growing high-quality aluminum nitride (AlN) layers for electronic and optoelectronic applications. AlN is a critical material for high-frequency and high-power devices due to its wide bandgap and excellent thermal conductivity, but growing defect-free AlN layers on substrates like sapphire or silicon remains difficult. The invention improves upon prior art by incorporating a polycrystalline AlN seed layer composed of multiple stacked polycrystalline AlN layers. This multi-layered seed structure enhances crystal quality by reducing defects and improving lattice matching with the underlying substrate. Each polycrystalline AlN layer in the stack contributes to a gradual transition in crystal orientation, minimizing strain and dislocations. The stacked configuration allows for better control over the nucleation process, leading to a more uniform and higher-quality AlN film. This approach is particularly useful in applications requiring high-performance AlN-based devices, such as RF transistors, UV LEDs, and power electronics. The invention overcomes limitations of single-layer seed approaches by leveraging the cumulative effect of multiple layers to achieve superior material properties.
17. The semiconductor substrate structure of claim 1 , wherein the polycrystalline AlN seed layer is selected to have sufficient chemical affinity with constituents of the at least one active layer to be formed such that the polycrystalline AlN seed layer prevents the constituents from settling on edges of the exposed upper surface of the plurality of single-crystal semiconductor islands.
The invention relates to semiconductor substrate structures, specifically addressing challenges in epitaxial growth on patterned substrates. The problem involves preventing unwanted deposition of active layer constituents on the edges of single-crystal semiconductor islands during growth, which can degrade device performance. The solution involves a polycrystalline aluminum nitride (AlN) seed layer with tailored chemical affinity to the active layer materials. This seed layer selectively inhibits constituent deposition on the island edges while allowing proper growth on the intended surfaces. The structure includes a substrate with multiple single-crystal semiconductor islands, each having an exposed upper surface. The polycrystalline AlN seed layer is deposited over these islands and exhibits sufficient chemical affinity to the active layer constituents to block their settlement on the edges. This ensures clean, controlled growth of the active layers, improving device quality and yield. The invention is particularly useful in semiconductor manufacturing where precise material deposition is critical, such as in optoelectronic or power electronic devices. The polycrystalline AlN seed layer acts as a barrier, maintaining the integrity of the active layer growth process.
18. The method of claim 9 , further comprising exposing the structure to precursor gases to form the active layer of III-V material on the exposed upper surface of the plurality of single-crystal semiconductor islands.
This invention relates to semiconductor fabrication, specifically the formation of III-V compound semiconductor materials on a substrate. The problem addressed is the integration of high-performance III-V materials with conventional silicon-based semiconductor processes, which is challenging due to lattice mismatch and thermal expansion differences. The solution involves creating a patterned substrate with single-crystal semiconductor islands, which serve as nucleation sites for subsequent III-V material growth. The method includes forming a mask layer on a substrate, patterning the mask to define exposed regions, and etching to create the single-crystal semiconductor islands. These islands have upper surfaces that are coplanar with the mask layer. The patterned substrate is then exposed to precursor gases to selectively grow an active layer of III-V material on the exposed upper surfaces of the islands. This selective growth ensures that the III-V material is deposited only on the intended nucleation sites, avoiding unwanted deposition on the mask layer. The resulting structure enables the integration of III-V materials with silicon-based semiconductor devices, improving performance for applications such as high-speed electronics and optoelectronics. The method leverages existing semiconductor fabrication techniques, making it compatible with standard manufacturing processes.
19. The method of claim 18 , wherein exposing the structure to precursor gases comprises forming a residue layer on the polycrystalline AlN seed layer.
The invention relates to semiconductor fabrication, specifically to methods for depositing aluminum nitride (AlN) films using chemical vapor deposition (CVD). The problem addressed is achieving high-quality AlN films with controlled properties, particularly when using polycrystalline AlN seed layers. During CVD, precursor gases react to form AlN, but unwanted byproducts or residues can accumulate on the seed layer, degrading film quality. The method involves exposing a polycrystalline AlN seed layer to precursor gases to deposit an AlN film. A key aspect is the intentional formation of a residue layer on the seed layer during this exposure. This residue layer modifies the surface chemistry or morphology of the seed layer, improving subsequent AlN film growth. The precursor gases may include aluminum-containing and nitrogen-containing compounds, such as trimethylaluminum (TMA) and ammonia (NH3). The residue layer may consist of reaction byproducts like carbon-containing species or unreacted precursors. The process conditions, such as temperature, pressure, and gas flow rates, are controlled to ensure the residue layer forms uniformly and does not adversely affect film properties. This technique enhances film crystallinity, reduces defects, and improves electrical or optical properties of the deposited AlN. The method is particularly useful for applications requiring high-quality AlN films, such as in RF devices, piezoelectric sensors, or deep ultraviolet (DUV) optoelectronics.
20. The method of claim 18 , wherein exposing the structure to precursor gases comprises preventing chemical species from the precursor gases from migrating and settling on edges of the exposed upper surface of the plurality of single-crystal semiconductor islands.
This invention relates to semiconductor fabrication, specifically to methods for depositing thin films on single-crystal semiconductor islands while preventing unwanted chemical species from accumulating on the edges of the islands. The problem addressed is the formation of defects or non-uniformities at the edges of semiconductor islands during thin film deposition processes, which can degrade device performance. The method involves exposing the semiconductor islands to precursor gases in a controlled manner to ensure that chemical species from the gases do not migrate and settle on the edges of the exposed upper surfaces of the islands. This is achieved by using techniques such as directional gas flow, temperature control, or surface passivation to limit edge deposition. The semiconductor islands are typically part of a larger substrate, and the method ensures uniform film growth on the top surfaces while minimizing edge contamination. This approach is particularly useful in advanced semiconductor manufacturing, where precise control over film deposition is critical for high-performance devices. The method may be applied in processes like atomic layer deposition (ALD) or chemical vapor deposition (CVD), where edge effects can significantly impact device yield and reliability.
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September 21, 2017
April 5, 2022
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