There is provided a technique for improving a resistance of a film to vibration in a semiconductor device having a vibrating film, including at least: forming a first silicon oxide film; forming a first silicon nitride film; forming a second silicon oxide film; and forming a second silicon nitride film, and each film formation is performed using a substrate processing apparatus configured to supply gas to a process chamber including upper and bottom electrodes, and selectively supply high frequency power or low frequency power to each of the upper and bottom electrodes by switching.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for manufacturing a semiconductor device having a vibratable insulating film, the method comprising at least: forming a first silicon oxide film; forming a first silicon nitride film; forming a second silicon oxide film; and forming a second silicon nitride film, as a formation of the insulating film, the formation of the second silicon oxide film comprising: supplying silicon-containing gas and oxygen-containing gas to a process chamber, and performing switching to supply low frequency power to a top electrode installed in the process chamber, and supply high frequency power to a bottom electrode installed in the process chamber, and the formation of the second silicon nitride film comprising: supplying silicon-containing gas and nitrogen-containing gas to the process chamber, and performing switching to supply low frequency power to the top electrode and supply high frequency power to the bottom electrode.
2. The method according to claim 1 , wherein the formation of the first silicon oxide film comprises: supplying silicon-containing gas and oxygen-containing gas to the process chamber, and performing switching to supply high frequency power to the top electrode and supply low frequency power to the bottom electrode, and the formation of the first silicon nitride film comprises: supplying silicon-containing gas and nitrogen-containing gas to the process chamber, and performing switching to supply high frequency power to the top electrode and supply low frequency power to the bottom electrode.
3. The method according to claim 2 , wherein the formation of the second silicon oxide film and the formation of the second silicon nitride film are repeated a plurality of number of times.
4. The method according to claim 3 , comprising: forming a third silicon nitride film as the formation of the insulating film, separately from the formation of the first silicon nitride film and the formation of the second silicon nitride film, the formation of the third silicon nitride film comprising: supplying silicon-containing gas and nitrogen-containing gas to the process chamber, and performing switching to supply high frequency power to the top electrode and supply low frequency power to the bottom electrode.
5. The method according to claim 4 , wherein when the formation of the second silicon oxide film and the formation of the second silicon nitride film are repeated a plurality of number of times, and when an uppermost layer has the same composition as the third silicon nitride film, the formation of the second silicon oxide film is performed to make each composition different.
6. The method according to claim 5 , wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, a formation of the insulating film on the coating film is performed to seal the hole.
7. The method according to claim 4 , wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, a formation of the insulating film on the coating film is performed to seal the hole.
8. The method according to claim 3 , wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, a formation of the insulating film on the coating film is performed to seal the hole.
9. The method according to claim 2 , wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, the formation of the insulating film on the coating film is performed to seal the hole.
10. The method according to claim 1 , wherein the formation of the second silicon oxide film and the formation of the second silicon nitride film are repeated a plurality of number of times.
11. The method according to claim 10 , comprising: forming a third silicon nitride film as the formation of the insulating film, separately from the formation of the first silicon nitride film and the formation of the second silicon nitride film, the formation of the third silicon nitride film comprising: supplying silicon-containing gas and nitrogen-containing gas to the process chamber, and performing switching to supply high frequency power to the top electrode and supply low frequency power to the bottom electrode.
12. The method according to claim 11 , wherein when the formation of the second silicon oxide film and the formation of the second silicon nitride film are repeated a plurality of number of times, and when an uppermost layer has the same composition as the third silicon nitride film, the formation of the second silicon oxide film is performed to make each composition different.
13. The method according to claim 11 , wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, the formation of the insulating film on the coating film is performed to seal the hole.
14. The method according to claim 10 , wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, the formation of the insulating film on the coating film is performed to seal the hole.
15. The method according to claim 1 , comprising: forming a third silicon nitride film as the formation of the insulating film, separately from the formation of the first silicon nitride film and the formation of the second silicon nitride film, the formation of the third silicon nitride film comprising: supplying silicon-containing gas and nitrogen-containing gas to the process chamber, and performing switching to supply high frequency power to the top electrode and supply low frequency power to the bottom electrode.
16. The method according to claim 15 , wherein when the formation of the second silicon oxide film and the formation of the second silicon nitride film are repeated a plurality of number of times, and when an uppermost layer has the same composition as the third silicon nitride film, the formation of the second silicon oxide film is performed to make each composition different.
17. The method according to claim 15 , wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, the formation of the insulating film on the coating film is performed to seal the hole.
18. The method according to claim 1 , wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, the formation of the insulating film on the coating film is performed to seal the hole.
19. A substrate processing apparatus, comprising: a process chamber that houses a workpiece; a first gas supplier that supplies silicon-containing gas to the process chamber; a second gas supplier that supplies oxygen-containing gas to the process chamber; a third gas supplier that supplies nitrogen-containing gas to the process chamber; a top electrode and a bottom electrode disposed in the process chamber; a high frequency power supplier that supplies high frequency power to the top electrode or the bottom electrode; a low frequency power supplier that supplies low frequency power to the top electrode or the bottom electrode; a switch that selects whether to supply high frequency power from the high frequency power supplier or low frequency power from the low frequency power supplier to each of the top electrode and the bottom electrode; and a controller that controls supply of gas by the first gas supplier, the second gas supplier, and the third gas supplier, and controls selective switching of power supply by the switch, and configured to perform at least: processing for forming a second silicon oxide film that configures an insulating film, by supplying silicon-containing gas and oxygen-containing gas to the process chamber, and performing switching to supply low frequency power to the top electrode and supply high frequency power to the bottom electrode; and processing for forming a second silicon nitride film that configures the insulating film, by supplying silicon-containing gas and nitrogen-containing gas to the process chamber, and performing switching to supply low frequency power to the top electrode and supply high frequency power to the bottom electrode, when forming a vibratable insulating film having the first silicon oxide film, the first silicon nitride film, the second silicon oxide film, and the second silicon nitride film on the workpiece.
20. A non-transitory computer readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising, at least a procedure for forming a first silicon oxide film, a procedure for forming a first silicon nitride film, a procedure for forming a second silicon oxide film, and a procedure for forming a second silicon nitride film as procedures for forming a vibratable insulating film, the procedure for forming the second silicon oxide film including: supplying silicon-containing gas and oxygen-containing gas to a process chamber, and performing switching to supply low frequency power to a top electrode installed in the process chamber and supply high frequency power to a bottom electrode installed in the process chamber, and the procedure for forming the second silicon nitride film including: supplying silicon-containing gas and nitrogen-containing gas to the process chamber and performing switching to supply low frequency power to the top electrode and supply high frequency power to the bottom electrode.
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February 21, 2020
April 19, 2022
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