A single memory cell array is formed to maintain current delivery and mitigate current spike through the deposition of resistive materials in two or more regions of the array, including at least one region of memory cells nearer to contacts on the conductive lines and at least one region of memory cells farther from the contacts, where the contacts connect the conductive lines to the current source. Higher and lower resistive materials are introduced during the formation of the memory cells and the conductive lines based on the boundaries and dimensions of the two or more regions using a photo mask. Multiple memory cell arrays formed to maintain current delivery and mitigate current spike can be arranged into a three-dimensional memory cell array. The regions of memory cells in each memory cell array can vary depending on resistance at the contacts on the conductive lines that provide access to the memory cells, where the resistance can vary from one memory cell array to another.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A circuit comprising: first conductive lines in a first orientation in a plane parallel to second conductive lines in a second orientation, the first conductive lines overlapping the second conductive lines to form cross points; first contacts disposed at one end of any of the first conductive lines and second contacts disposed at one end of any of the second conductive lines, the first contacts and the second contacts to connect to a current source for accessing memory cells coupled to the first conductive lines and the second conductive lines at the cross points; the memory cells including near memory cells, near to any of the first contacts and the second contacts and vulnerable to a spike in current delivery interfering with accessing the memory cells, and far memory cells, far from any of the first contacts and the second contacts and vulnerable to a drop in current delivery interfering with accessing the memory cells; a high resistive material along any one or both of the first conductive lines coupled to one or more of the near memory cells and the second conductive lines coupled to one or more of the near memory cells, the high resistive material to increase a resistance of a current path for the one or more of the near memory cells to mitigate the spike in current delivery; and a low resistive material along any one or both of the first conductive lines coupled to one or more of the far memory cells and the second conductive lines coupled to one or more of the far memory cells, the low resistive material to reduce the resistance of the current path for the one or more of the far memory cells to preserve current delivery.
2. The circuit of claim 1 , wherein: the high resistive material along any of: the second conductive lines coupled to one or more of the near memory cells, and a near portion of the first conductive lines coupled to one or more of the near memory cells, the near portion near to the first contacts; and the low resistive material along any of: the second conductive lines coupled to one or more of the far memory cells, and a far portion of the first conductive lines coupled to one or more of the far memory cells, the far portion far from the first contacts.
3. The circuit of claim 1 , wherein: the high resistive material along any of the first conductive lines and the second conductive lines coupled to one or more of the near memory cells; and the low resistive material along any of the first and the second conductive lines coupled to one or more of the far memory cells.
4. The circuit of claim 3 , wherein: the high resistive material along a near portion of any of the first conductive lines and the second conductive lines coupled to one or more of the near memory cells; and the low resistive material along a far portion of any of the first conductive lines and the second conductive lines coupled to one or more of the far memory cells.
5. The circuit of claim 1 , the circuit further comprising intermediate memory cells farther from any of the first contacts and the second contacts relative to near memory cells but nearer to any of the first contacts and the second contacts relative to the far memory cells; and an intermediate resistive material along any of the first conductive lines and second conductive lines coupled to one or more of the intermediate memory cells, the intermediate resistive material to decrease a resistance of a current path for the intermediate memory cell relative to the near memory cell and to increase the resistance of the current path for the intermediate memory cell relative to the far memory cell.
6. The circuit of claim 1 , further comprising: hybrid memory cells near to first contacts but far from second contacts; the high resistive material along any of the first conductive lines coupled to any of the hybrid memory cells; and the low resistive material along any of the second conductive lines coupled to any of the hybrid memory cells.
7. The circuit of claim 1 , wherein any one of: the first conductive lines are wordlines and the second conductive lines are bitlines; and the first conductive lines are bitlines and the second conductive lines are wordlines.
8. The circuit of claim 1 , wherein the memory cells coupled to the first conductive lines and the second conductive lines form a single memory array, the single memory array and a second memory array coupled to a three-dimensional memory array structure; and wherein cross points of the near memory cells and the far memory cells are any of comparable to or different from the cross points of the near memory cells and the far memory cells of the second memory array, depending on any one or more of: an array capacitance of the single memory array compared to the array capacitance of the second memory array, and a resistance of the first contacts and the second contacts in the single memory array compared to the resistance of the first contacts and the second contacts in the second memory array.
9. The circuit of claim 1 , wherein: any of the high resistive material is any of a metal nitride, including tungsten nitride (WN) and a metal silicide, including any of tungsten silicide nitride (WSiN), and titanium silicon nitride (TiSiN); and the low resistive material is a metal, the metal including any of titanium (Ti) and tungsten (W) metals.
10. The circuit of claim 1 , wherein the memory cells are composed of a memory material that enables accessing a value stored in the memory cell, the memory material including any of a single-level phase change material, a multi-level phase change memory material, a phase change memory material with a switch, a chalcogenide phase change material including chalcogenide glass, a resistive memory material including metal oxide base, oxygen vacancy base, a conductive bridge random access memory material, ferroelectric transistor random access memory, magnetoresistive random access memory, memory that incorporates memristor technology and spin transfer torque memory.
11. A system comprising: a processor; a memory device communicatively coupled with the processor, the memory device including an array of memory cells comprising: first conductive lines in a first orientation in a plane parallel to second conductive lines in a second orientation, the first conductive lines overlapping the second conductive lines to form cross points; first contacts disposed at one end of any of the first conductive lines and second contacts disposed at one end of any of the second conductive lines, the first contacts and the second contacts to connect to a current source for accessing memory cells coupled to the first conductive lines and the second conductive lines at the cross points; the memory cells including near memory cells, near to any of the first contacts and the second contacts and vulnerable to a spike in current delivery interfering with accessing the memory cells, and far memory cells, far from any of the first contacts and the second contacts and vulnerable to a drop in current delivery interfering with accessing the memory cells; a high resistive material along any one or both of the first conductive lines coupled to one or more of the near memory cells and the second conductive lines coupled to one or more of the near memory cells, the high resistive material to increase a resistance of a current path for the one or more of the near memory cells to mitigate the spike in current delivery; and a low resistive material along any one or both of the first conductive lines coupled to one or more of the far memory cells and the second conductive lines coupled to one or more of the far memory cells, the low resistive material to reduce the resistance of the current path for the one or more of the far memory cells to preserve current delivery.
12. The system of claim 11 , wherein: the high resistive material along any of: the second conductive lines coupled to any one or more of the near memory cells, and a near portion of the first conductive lines coupled to one or more of the near memory cells, the near portion near to the first contacts; and the low resistive material along any of: the second conductive lines coupled to one or more of the far memory cells, and a far portion of the first conductive lines coupled to one or more of the far memory cells, the far portion far from the first contacts.
13. The system of claim 12 , further comprising: the high resistive material along a near portion of any of the first conductive lines and the second conductive lines coupled to one or more of the near memory cells; and the low resistive material along a far portion of any of the first conductive lines and the second conductive lines coupled to one or more of the far memory cells.
14. The system of claim 11 , wherein: the high resistive material along any of the first conductive lines and the second conductive lines coupled to any of the near memory cells; and the low resistive material along any of the first conductive lines and the second conductive lines coupled to any of the far memory cells.
15. The system of claim 11 , further comprising intermediate memory cells farther from any of the first contacts and the second contacts relative to near memory cells but nearer to any of the first contacts and the second contacts relative to the far memory cells; and an intermediate resistive material along any of the first conductive lines and second conductive lines coupled to one or more of the intermediate memory cells, the intermediate resistive material to decrease a resistance of a current path for the intermediate memory cell relative to the near memory cell and to increase the resistance of the current path for the intermediate memory cell relative to the far memory cell.
16. The system of claim 11 , further comprising: hybrid memory cells near to first contacts but far from second contacts; the high resistive material along any of the first conductive lines coupled to any of the hybrid memory cells; and the low resistive material along any of the second conductive lines coupled to any of the hybrid memory cells.
17. The system of claim 11 , wherein any one of: the first conductive lines are wordlines and the second conductive lines are bitlines; and the first conductive lines are bitlines and the second conductive lines are wordlines.
18. The system of claim 11 , wherein the memory cells coupled to the first conductive lines and the second conductive lines form an array of memory cells, the array of memory cells and a second array of memory cells coupled to a three-dimensional memory array structure; and wherein cross points of the near memory cells and the far memory cells are any of comparable to or different from the cross points of the near memory cells and the far memory cells of the second array of memory cells, depending on any one or more of: an array capacitance of the array of memory cells compared to the array capacitance of the second array of memory cells, and a resistance of the first contacts and the second contacts in the array of memory cells compared to the resistance of the first contacts and the second contacts in the second array of memory cells.
19. The system of claim 11 , wherein: any of the high resistive material is any of a metal nitride, including tungsten nitride (WN) and a metal silicide, including any of tungsten silicide nitride (WSiN), and titanium silicon nitride (TiSiN); and the low resistive material is a metal, the metal including any of titanium (Ti) and tungsten (W) metals.
20. The system of claim 11 , wherein the memory cells in the memory array are composed of a memory material that enables accessing a value stored in the memory cell, the memory material including any of a single-level phase change material, a multi-level phase change memory material, a phase change memory material with a switch, a chalcogenide phase change material including chalcogenide glass, a resistive memory material including metal oxide base, oxygen vacancy base, a conductive bridge random access memory material, ferroelectric transistor random access memory, magnetoresistive random access memory, memory that incorporates memristor technology and spin transfer torque memory.
21. A circuit comprising an array of memory cells, the circuit further comprising: a memory material coupled to a conductive material to access a value stored in a memory cell in the array of memory cells, an upper surface of the memory material coupled to a first conductive material and a lower surface of the memory material coupled to a second conductive material; first contacts disposed at one end of any of first conductive lines and second contacts disposed at one end of any of second conductive lines, the first conductive lines and the second conductive lines formed from the respective first conductive materials and the second conductive materials, the first contacts and the second contacts to connect to a current source to access the value stored in the memory cell in the array of memory cells; the array of memory cells including one or more near memory cells, near to any of the first contacts and the second contacts and vulnerable to a spike in current delivery interfering with access to the value, and one or more far memory cells, far from any of the first contacts and the second contacts and vulnerable to a drop in current delivery interfering with access to the value; high resistive material on any of the first conductive lines and the second conductive lines coupled to one or more of the near memory cells, the high resistive material to increase a resistance of a current path for the near memory cells; and low resistive material on any of the first conductive lines and second conductive lines coupled to one or more of the far memory cells, the low resistive material to reduce a resistance of the current path for the far memory cells.
22. The circuit of claim 21 , wherein any one of: the first conductive lines are wordlines and the second conductive lines are bitlines; and the first conductive lines are bitlines and the second conductive lines are wordlines.
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September 27, 2018
May 3, 2022
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