Methods and associated devices including the fabrication of a semiconductor structure are described that include epitaxially growing a stack of layers alternating between a first composition and a second composition. The stack of layers extends across a first region and a second region of a semiconductor substrate. The stack of layers in the second region of the semiconductor substrate may be etched to form an opening. A passivation process is then performed that includes introducing chlorine to at least one surface of the opening. After performing the passivation process, an epitaxial liner layer is grown in the opening.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method fabrication of a semiconductor structure, comprising: epitaxially growing a stack of layers alternating between a first composition and a second composition, the stack of layers extending across a first region and a second region of a semiconductor substrate; etching the stack of layers in the second region of the semiconductor substrate to form an opening; performing a passivation process introducing chlorine to at least one surface of the opening; and after performing the passivation process, growing an epitaxial liner layer in the opening.
2. The method of claim 1 , further comprising: forming a channel of a gate all around (GAA) transistor using the stack of layers of the second composition in the first region of the semiconductor substrate.
3. The method of claim 1 , wherein the epitaxially growing the stack of layers alternating between the first composition and the second composition includes: epitaxially growing the first composition of epitaxial layers by growing a silicon germanium layer; and epitaxially growing the second composition of epitaxial layers by growing a silicon layer.
4. The method of claim 1 , further comprising: growing additional epitaxial material on the epitaxial liner layer.
5. The method of claim 4 , further comprising: forming a fin of the additional epitaxial material, wherein the fin includes a channel region of a FinFET device in the second region of the semiconductor substrate.
6. The method of claim 4 , wherein the growing the additional epitaxial material is performed a first temperature and the growing the epitaxial liner layer is performed at a second temperature, the second temperature less than the first temperature.
7. The method of claim 1 , wherein the performing the passivation process introducing chlorine includes bonding chlorine to the first composition of layers but not the second composition of layers.
8. The method of claim 1 , wherein the performing the passivation process introducing chlorine includes bonding chlorine to the first composition of layers, the first composition being silicon.
9. The method of claim 8 , wherein the second composition is silicon germanium.
10. The method of claim 1 , wherein etching the opening exposes a surface of the semiconductor substrate in the second region.
11. The method of claim 10 , wherein the performing the passivation process includes introducing chlorine to the exposed surface of the semiconductor substrate.
12. A method of fabricating a semiconductor device, comprising: forming a stack including a first silicon germanium (SiGe) layer and a second SiGe layer; forming a first silicon (Si) layer interposing the first and second SiGe layers; etching a first region of the stack, wherein etching the first region includes removing portions of each of the first Si layer, the first SiGe layer, and second SiGe layer to provide an opening having a first sidewall including the first SiGe layer, the first Si layer and the second Si layer; performing a passivation process on the first sidewall of the first Si layer to form a passivated sidewall of the first Si layer, wherein the first SiGe layer and the second SiGe layer is free of the passivated sidewall; and epitaxially growing a silicon layer on the passivated sidewall of the first Si layer.
13. The method of claim 12 , wherein the passivation process includes introducing hydrochloric (HCl) acid.
14. The method of claim 12 , wherein the epitaxially growing the silicon layer includes: growing a first layer of silicon at a first temperature; and growing a second layer of silicon at a second temperature, the second temperature greater than the first temperature.
15. The method of claim 14 , wherein the passivation process is performed at a third temperature less than the first and second temperatures.
16. The method of claim 15 , wherein the passivation process ramps from the third temperature to the first temperature during the passivation process.
17. A method, comprising: growing an epitaxial stack of alternating silicon and silicon germanium layers on a substrate; etching an opening in the epitaxial stack exposing a surface of the substrate; introducing hydrochloric acid (HCl) to the substrate having the etched opening; and after introducing the HCl, growing a first portion of a silicon epitaxial material in the opening at a first temperature and growing a second portion of the silicon epitaxial material over the first portion at a second temperature greater than the first temperature.
18. The method of claim 17 , further comprising: using at least one of the first portion and the second portion of the silicon epitaxial material to form a fin of a FinFET device.
19. The method of claim 17 , further comprising: using the silicon layers of epitaxial stack to form a channel of a gate-all-around (GAA) device.
20. The method of claim 17 , wherein the introducing HCl to the substrate having the etched opening bonds chlorine atoms to the surface of the substrate.
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July 22, 2020
May 10, 2022
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