Embodiments include a package structure with one or more layers of dielectric material, where an interconnect bridge substrate is embedded within the dielectric material. One or more via structures are on a first surface of the embedded substrate, where individual ones of the via structures comprise a conductive material and have a tapered profile. The conductive material is also on a sidewall of the embedded substrate.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A package structure comprising: one or more layers of dielectric material; an embedded substrate within the dielectric material; and one or more via structures each in direct contact with an external side of a corresponding pad of the embedded substrate on a first side of the embedded substrate, the external side facing away from the embedded substrate, wherein individual ones of the via structures comprise a conductive material and have a tapered profile, and wherein the individual ones of the via structures comprise a first portion and a second portion, wherein the first portion is on the embedded substrate, and the second portion is on the first portion, and wherein a lateral width of the first portion is greater than a lateral width of the second portion.
2. The package structure of claim 1 , wherein the conductive material is also on a sidewall of the embedded substrate.
3. The package structure of claim 1 , wherein individual ones of the via structures comprise a first via structure, and wherein the package structure further comprises one or more second via structures, wherein individual ones of the second via structure have a first portion and a second portion, wherein the first portion of the second via is on the first via structure, and the second portion of the second via structure is on the first portion of the second via structure, wherein the second portion of the second via structure has a lateral width that is greater than a lateral width of the first portion of the second via structure.
4. The package structure of claim 3 , wherein the second via is above the first via, and where two or more pads are coupled to each other by a trace within the embedded substrate.
5. The package structure of claim 1 , further comprising a third portion, wherein the third portion is on the second portion, wherein the third portion has a greater lateral width than the second portion.
6. The package structure of claim 1 , wherein the lateral width of the first portion is at least 10 percent greater than the lateral width of the second portion.
7. The package structure of claim 1 , wherein a diameter of individual ones of the via structure is between 2 microns and 50 microns, a height of individual ones of the via structures is between 3 microns and 20 microns, and a space between adjacent individual ones of the via structures is between 25 to 35 microns.
8. The package structure of claim 1 , wherein a ratio of a space between adjacent individual ones of the via structures and a height of adjacent individual ones of the via structures is at least 2:1.
9. The package structure of claim 1 , further comprising a first die and a second die adjacent the first die, wherein the first die and the second die are electrically coupled to the one or more via structures.
10. A package structure comprising: a substrate comprising one or more layers of dielectric material; an embedded interconnect bridge within the dielectric material; one or more first tapered interconnect structures each coupled to an external side of a corresponding pad of the embedded substrate on a first region of a first side of the embedded interconnect bridge; one or more second tapered interconnect structures each in direct contact with an external side of a corresponding pad of the embedded substrate on a second region of the first side of the embedded interconnect bridge, the external side facing away from the embedded interconnect bridge, wherein individual ones of the first and second tapered interconnect structures comprise a first portion and a second portion, wherein a lateral width of the first portion is at least about 10 percent greater than a lateral width of the second portion, and wherein the first portion is on the first side of the embedded interconnect bridge, and the second portion is on the first portion; a first die coupled to the one or more first tapered interconnect structures on the first region; and a second die coupled to the one or more second tapered interconnect structures on the second region.
11. The package structure of claim 10 , wherein a conductive lining is on a sidewall of the embedded interconnect bridge.
12. The package structure of claim 10 , wherein the conductive lining comprises a thickness of 3 to 20 microns.
13. The package structure of claim 10 , wherein the conductive lining is between the sidewall of the embedded interconnect bridge and a dielectric material adjacent the embedded interconnect bridge.
14. The package structure of claim 10 , wherein a first portion of a footprint of the first die is adjacent the interconnect bridge and a second portion of the footprint of the first die is over the embedded interconnect bridge.
15. The package structure of claim 10 , wherein a conductive trace is on a second side of the embedded interconnect bridge.
16. The package structure of claim 10 , wherein a space between adjacent individual ones of the first and second tapered interconnect structures is greater than about twice a height of individual ones of the tapered interconnect structures.
17. The package structure of claim 10 , wherein the first die and the second die are electrically coupled to each other through one or more first tapered interconnect structures and one or more second tapered interconnect structures.
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March 27, 2018
June 28, 2022
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