A photoelectric conversion apparatus includes an element isolating portion that is disposed on a side of a front surface of a semiconductor layer and constituted by an insulator, and a pixel isolating portion. The pixel isolating portion includes a part that overlaps an isolating region in a normal direction. The semiconductor layer is continuous across semiconductor regions in an intermediate plane. The part is located between a semiconductor region and another semiconductor region.
Legal claims defining the scope of protection, as filed with the USPTO.
10. The photoelectric conversion apparatus according to claim 9, wherein the first isolating portion extends along a direction parallel to the first virtual line.
11. The photoelectric conversion apparatus according to claim 1, wherein a fixed charge film is provided in the first groove of the first isolating portion.
12. The photoelectric conversion apparatus according to claim 1, wherein the first groove of the first isolating portion is at least partially hollow.
16. The photoelectric conversion apparatus according to claim 15, wherein the well contact is surrounded by a second isolating portion including a second insulator disposed on a side of the first surface in planar view.
22. The photoelectric conversion apparatus according to claim 21, wherein the well contact is located between the first photoelectric conversion element and the fourth photoelectric conversion element and located between the second photoelectric conversion element and the third photoelectric conversion element, in planar view.
23. The photoelectric conversion apparatus according to claim 22, wherein the well contact and the first isolating portion are located along the direction intersecting with the first direction, in planar view.
24. The photoelectric conversion apparatus according to claim 21, wherein the first photoelectric conversion element, the well contact, and the fourth photoelectric conversion element are located along a third direction and the second photoelectric conversion element, the well contact, and the third photoelectric conversion element are located along a fourth direction intersecting with the third direction, in planar view.
26. The photoelectric conversion apparatus according to claim 25, wherein the well contact includes a third impurity region of the second conductivity type to which a conductive member is connected and having an impurity concentration higher than an impurity concentration of the second impurity region of the first photoelectric conversion element.
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December 17, 2019
August 30, 2022
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