A photoelectric conversion device includes a first semiconductor substrate including a photoelectric conversion unit for generating a signal charge in accordance with an incident light, and a second semiconductor substrate including a signal processing unit for processing an electrical signal on the basis of the signal charge generated in the photoelectric conversion unit. The signal processing unit is situated in an orthogonal projection area from the photoelectric conversion unit to the second semiconductor substrate. A multilayer film including a plurality of insulator layers is provided between the first semiconductor substrate and the second semiconductor substrate. The thickness of the second semiconductor substrate is smaller than 500 micrometers. The thickness of the second semiconductor substrate is greater than the distance from the second semiconductor substrate and a light-receiving surface of the first semiconductor substrate.
Legal claims defining the scope of protection, as filed with the USPTO.
2. The device according to claim 1, wherein an entire of the photoelectric conversion unit is situated in an entire orthogonal projection area from the semiconductor substrate.
3. The device according to claim 1, wherein the conductor layer is made of copper.
4. The device according to claim 1, further comprising a microlens array above the photoelectric conversion unit, the photoelectric conversion unit being between the microlens array and the semiconductor substrate.
5. The device according to claim 4, further comprising a color filter array above the photoelectric conversion unit, the color filter array being between the microlens array and the photoelectric conversion unit.
8. The device according to claim 7, wherein a thickness of the semiconductor substrate is equal to or greater than 10 times a thickness of the another semiconductor substrate and is equal to or smaller than 100 times the thickness of the another semiconductor substrate.
9. The device according to claim 7, wherein an opening is provided to penetrate the another semiconductor substrate.
11. The device according to claim 10, wherein the first conductor layer and the second conductor layer are made of copper.
12. The device according to claim 1, wherein the thickness of the semiconductor substrate is more than 100 micrometers.
14. The device according to claim 13, wherein the signal processing unit includes a counter of the analog-to-digital conversion circuit.
15. The device according to claim 14, wherein the signal processing unit includes a comparator of the analog-to-digital conversion circuit.
16. The device according to claim 6, wherein a thickness of the another semiconductor substrate is smaller than 10 micrometers and a thickness of the semiconductor substrate is smaller than 300 micrometers.
17. The device according to claim 7, wherein a distance between the light input surface of the lens array and the second surface of the another semiconductor substrate is not greater than a distance between the first surface of the another semiconductor substrate and the first surface of the semiconductor substrate.
19. The system according to claim 18, wherein the display unit is a touch panel.
20. The device according to claim 1, wherein the part of the transistor is a source region or a drain region of the transistor.
22. The device according to claim 21, further comprising an electrode which penetrates the another semiconductor substrate and electrically connects the conductor layer of the first multilayer film and the conductor layer of the second multilayer film.
23. The device according to claim 6, wherein the photoelectric conversion unit of the another semiconductor substrate includes a signal generating circuit which generates an electrical signal on the basis of signal charge generated in the photoelectric conversion unit, the signal generating circuit comprising a transfer transistor, an amplifying transistor and a reset transistor.
26. The device according to claim 25, wherein a thickness of the semiconductor substrate is equal to or greater than 10 times a thickness of the another semiconductor substrate and is equal to or smaller than 100 times the thickness of the another semiconductor substrate.
27. The device according to claim 25, wherein an opening is provided to penetrate the another semiconductor substrate.
29. The device according to claim 28, wherein the first conductor layer and the second conductor layer are made of copper.
30. The device according to claim 28, wherein the thickness of the semiconductor substrate is more than 100 micrometers.
33. The device according to claim 24, wherein a thickness of the another semiconductor substrate is smaller than 10 micrometers and a thickness of the semiconductor substrate is smaller than 300 micrometers.
34. The device according to claim 25, wherein a distance between the light input surface of the lens array and the second surface of the another semiconductor substrate is not greater than a distance between the first surface of the another semiconductor substrate and the first surface of the semiconductor substrate.
35. The device according to claim 28, further comprising an electrode which penetrates the another semiconductor substrate and electrically connects the conductor layer of the first multilayer film and the conductor layer of the second multilayer film.
39. The device according to claim 38, wherein a thickness of the another semiconductor substrate is smaller than 10 micrometers and the thickness of the semiconductor substrate is smaller than 300 micrometers.
40. The device according to claim 38, wherein a distance between the light input surface of the lens array and the second surface of the another semiconductor substrate is not greater than a distance between the first surface of the another semiconductor substrate and the first surface of the semiconductor substrate.
42. The system according to claim 36, wherein the display unit is a touch panel.
43. The system according to claim 37, wherein the display unit is a touch panel.
44. The system according to claim 41, wherein the display unit is a touch panel.
45. The device according to claim 12, wherein the thickness of the semiconductor substrate is less than 400 micrometers.
46. The device according to claim 30, wherein the thickness of the semiconductor substrate is less than 400 micrometers.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
December 18, 2019
September 6, 2022
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.